MUR1605 thru MUR1660 - Thinki Semiconductor Co.,Ltd.

MUR1605 thru MUR1660
®
Pb
MUR1605 thru MUR1660
Pb Free Plating Product
16.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers
Unit : inch (mm)
TO-220AB
.054(1.39)
.045(1.15)
.177(4.5)MAX
Automotive Environment|DC Motor Control
Plating Power Supply|UPS
Amplifier and Sound Device System etc..
.038(0.96)
.019(0.50)
Mechanical Data
Case: Molded plastic TO-220AB Heatsink
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity:As marked on diode body
Mounting position: Any
Weight: 2.03 grams
.1(2.54)
.50(12.7)MIN
Application
.624(15.87)
.139(3.55)
MIN
.548(13.93)
.196(5.00)
.163(4.16)
.269(6.85)
.419(10.66)
.387(9.85)
.226(5.75)
Features
Fast switching for high efficiency
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
.025(0.65)MAX
.1(2.54)
Case
Case
Positive
Common Cathode
Suffix "CT"
Negative
Common Anode
Suffix "CTA"
Case
Doubler
Series Connection
Suffix "CTD"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Common Cathode Suffix "CT"
Common Anode Suffix "CTA"
Anode and Cathode Coexistence Suffix "CTD"
MUR1605CT
SYMBOL
MUR1610CT MUR1620CT
MUR1630CT
MUR1640CT
MUR1660CT
MUR1605CTA MUR1610CTA MUR1620CTA MUR1630CTA MUR1640CTA MUR1660CTA
UNIT
MUR1605CTD MUR1610CTD MUR1620CTD MUR1630CTD MUR1640CTD MUR1660CTD
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
300
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
210
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
300
400
600
V
Maximum Average Forward Rectified
16.0
IF(AV)
o
Current TC=100 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
175
VF
0.98
150
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
1.3
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
uA
250
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Operating Junction and Storage
Temperature Range
V
10.0
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
1.7
R JC
2.2
TJ, TSTG
-55 to + 150
pF
o
CW
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Page 1/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/
MUR1605 thru MUR1660
®
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
125
100
75
50
25
0
0
0
50
100
150
1
100
NUMBER OF CYCLES AT 60Hz
o
CASE TEMPERATURE, C
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
10
1000
MUR1605-MUR1620
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
MUR1630-MUR1640
1.0
MUR1660
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Page 2/2
© 2006 Thinki Semiconductor Co.,Ltd.
http://www.thinkisemi.com/