MUR2005 thru MUR2060 ® Pb MUR2005 thru MUR2060 Pb Free Plating Product 20.0 Ampere Glass Passivated Junction Ultrafast Recovery Rectifiers Unit : inch (mm) TO-220AB .054(1.39) .045(1.15) .177(4.5)MAX Automotive Environment|DC Motor Control Plating Power Supply|UPS Amplifier and Sound Device System etc.. .038(0.96) .019(0.50) Mechanical Data Case: Molded plastic TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity:As marked on diode body Mounting position: Any Weight: 2.03 grams .1(2.54) .50(12.7)MIN Application .624(15.87) .139(3.55) MIN .548(13.93) .196(5.00) .163(4.16) .269(6.85) .419(10.66) .387(9.85) .226(5.75) Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CA" Case Doubler Series Connection Suffix "GD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Common Cathode Suffix "CT" Common Anode Suffix "CA" Anode and Cathode Coexistence Suffix "GD" MUR2005CT MUR2010CT MUR2020CT MUR2030CT MUR2040CT MUR2060CT SYMBOL MUR2005CA MUR2010CA MUR2020CA MUR2030CA MUR2040CA MUR2060CA UNIT MUR2005GD MUR2010GD MUR2020GD MUR2030GDMUR2040GD MUR2060GD Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 300 400 600 V Maximum RMS Voltage VRMS 35 70 140 210 280 420 V VDC 50 100 200 300 400 600 V Maximum DC Blocking Voltage Maximum Average Forward Rectified 20.0 IF(AV) o Current TC=125 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.975 175 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range V 10.0 uA 250 uA 35 nS 70 120 TJ, TSTG 1.5 1.3 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Page 1/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/ MUR2005 thru MUR2060 ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10 1000 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MUR2005-MUR2020 MUR2030-MUR2040 1.0 MUR2060 0.1 o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% INSTANTANEOUS FORWARD VOLTAGE, VOLTS FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Page 2/2 © 2006 Thinki Semiconductor Co.,Ltd. http://www.thinkisemi.com/