MURF2020CTR thru MURF2060CTR ® Pb MURF2020CTR thru MURF2060CTR Pb Free Plating Product 20.0 Ampere Insulated Common Anode Ultra Fast Recovery Diodes ITO-220AB Unit : inch (mm) .189(4.8) .165(4.2) .272(6.9) .248(6.3) .406(10.3) .381(9.7) .134(3.4) .118(3.0) .130(3.3) .114(2.9) .606(15.4) .583(14.8) .112(2.85) .100(2.55) Features Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability Automotive Inverters/Solar Inverters Plating Power Supply,SMPS and UPS Car Audio Amplifiers and Sound Device Systems .161(4.1)MAX .071(1.8) .055(1.4) .055(1.4) .039(1.0) .035(0.9) .011(0.3) Mechanical Data Case: Insulated/Isolated ITO-220AB Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately .543(13.8) .512(13.0) Application .1 .1 (2.55) (2.55) Case Case Positive Common Cathode Suffix "CT" Negative Common Anode Suffix "CTR" .114(2.9) .098(2.5) .032(.8) MAX Case Doubler Tandem Polarity Suffix "CTD" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. MURF2020CT MURF2040CT MURF2060CT SYMBOL MURF2020CTR MURF2040CTR MURF2060CTR UNIT MURF2020CTD MURF2040CTD MURF2060CTD Maximum Recurrent Peak Reverse Voltage VRRM 200 400 600 V Maximum RMS Voltage VRMS 140 280 420 V Maximum DC Blocking Voltage VDC 200 400 600 V Maximum Average Forward Rectified 20.0 IF(AV) o Current TC=125 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 200 VF 0.98 A 175 (JEDEC method) Maximum Instantaneous Forward Voltage @ 10.0 A o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR Maximum Reverse Recovery Time (Note 1) Trr Typical junction Capacitance (Note 2) CJ Operating Junction and Storage Temperature Range TJ, TSTG 1.7 1.3 V 10.0 uA 250 uA 35 nS 70 120 -55 to +150 pF o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ MURF2020CTR thru MURF2060CTR ® FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 20 16 10 8 6 4 60 Hz Resistive or Inductive load 0 Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 MURF2020CTR 125 100 75 MURF2040CTR-MURF2060CTR 50 25 0 0 50 100 150 1 CASE TEMPERATURE, C 100 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 NUMBER OF CYCLES AT 60Hz o MURF2020CTR MURF2040CTR 10 0.1 MURF2060CTR TJ=25 oC PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/