® F16C20D thru F16C60D Pb Free Plating Product Pb F16C20D thru F16C60D 16.0 Ampere Heatsink Dual Tandem Fast Recovery Rectifier Diodes Unit : inch (mm) TO-220AB Feature Fast switching for high efficiency Low forward voltage drop High current capability Low reverse leakage current High surge current capability .419(10.66) .387(9.85) .196(5.00) .163(4.16) .139(3.55) MIN .054(1.39) .177(4.5)MAX Automotive Environment(Inverters/Converters) Plating Power Supply,Adaptor,SMPS and UPS Car Audio Amplifiers and Sound Device System .038(0.96) .019(0.50) Mechanical Data Case:TO-220AB Heatsink Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-202 method 208 Polarity: As marked on diode body Mounting position: Any Weight: 2.2 gram approximately .1(2.54) .624(15.87) .548(13.93) Application .50(12.7)MIN .269(6.85) .226(5.75) .045(1.15) .025(0.65)MAX .1(2.54) Case Case Positive Common Cathode Suffix "C" Negative Common Anode Suffix "A" Case Doubler Tandem Polarity Suffix "D" MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o Rating at 25 C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYMBOL F16C20C F16C20A F16C20D Maximum Recurrent Peak Reverse Voltage VRRM 200 Maximum RMS Voltage VRMS Maximum DC Blocking Voltage VDC Maximum Average Forward Rectified F16C40C F16C40A F16C40D F16C60C F16C60A F16C60D UNIT 400 600 V 140 280 420 V 200 400 600 V 16.0 IF(AV) o Current TC=100 C A Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load IFSM 175 VF 0.98 150 A (JEDEC method) Maximum Instantaneous Forward Voltage @ 8.0 A 1.3 o Maximum DC Reverse Current @TJ=25 C o At Rated DC Blocking Voltage @TJ=125 C IR uA 250 uA nS Trr 35 Typical junction Capacitance (Note 2) CJ 90 Operating Junction and Storage Temperature Range V 10.0 Maximum Reverse Recovery Time (Note 1) Typical Thermal Resistance (Note 3) 1.7 R JC 2.2 TJ, TSTG -55 to + 150 pF o C/W o C NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A. (2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. (3) Thermal Resistance junction to case. Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 1/2 http://www.thinkisemi.com/ ® F16C20D thru F16C60D FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT FIG.1 - FORWARD CURRENT DERATING CURVE 200 PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 16 13 10 8 6 4 60 Hz Resistive or Inductive load Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) 175 150 125 100 75 50 25 0 0 0 50 100 150 1 100 NUMBER OF CYCLES AT 60Hz o CASE TEMPERATURE, C FIG.4 - TYPICAL REVERSE CHARACTERISTICS FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 1000 80 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 F16C20D F16C40D 8 0.1 F16C60D o TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 o TJ=125 C 100 10 o TJ=25 C 1 0.1 0 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 20 40 60 80 100 PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE JUNCTION CAPACITANCE, pF 1000 o TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS Rev.04/2014 © 2006 Thinki Semiconductor Co.,Ltd. Page 2/2 http://www.thinkisemi.com/