SY SD101CW

SD101AW-SD101CW
SCHOTTKY DIODES
SOD-123
1.80(.071)
1.65(.065)
1.40(.055)
1.55(.061)
3.86(0.152)
3.9(0.154)
2.84(0.112)
3.56(0.145)
FEATURES
2.7(0.106)
3.7(0.146)
2.54(0.100)
2.6(0.102)
.71(0.028)
0.6(.023)
.50(0.020)
0.5(.020)
.15(.006)
MAX
Low forward voltage drop
Guard ring construction for transient protection
Negligible reverse recovery time
MECHANICAL DATA
1.35(.053)
.135(.005)
1.15(.045)
.94(.037)
.127(.004)
1.05(.041)
.25(.010)
MIN
Case: Molded plastic body
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
Polarity: Polarity symbols marked on case
Marking: SD101AW:S1, SD101BW:S2, SD101CW:S3
Dimensions in millimeters and (inches)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum ratings and electrical characteristics, Single diode @TA=25C
PARAMETER
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC Blocking voltage
RMS Reverse voltage
Forward continuous current
Repetitive peak forward current @t<1.0s
@t=10us
Power dissipation
Thermal resistance junction to ambient
Storage temperature
SYMBOLS
SD101AW
SD101BW
SD101CW
UNITS
VRRM
VRWM
VDC
60
50
40
VOLTS
VR(RMS)
42
35
15
50
2.0
400
300
-65 to +125
28
IFM
IFRM
Pd
RΘJA
TSTG
V
mA
mA
A
mW
C/W
C
Electrical ratings @TA=25C
PARAMETER
Reverse breakdown voltage
Fowrard voltage
Reverse current
Capacitance between terminals
Reverse recovery time
SYMBOLS
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
SD101AW
SD101BW
SD101CW
V(BR)R
Min.
60
50
40
Typ.
VF
IRM
CT
trr
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Max.
Unit
V
0.41
0.40
0.39
1.00
0.95
0.90
0.2
2.0
2.1
2.2
1.0
V
uA
pF
ns
Conditions
IR=10uA
IR=10uA
IR=10uA
IF=1.0mA
IF=1.0mA
IF=1.0mA
IF=15mA
IF=15mA
IF=15mA
VR=50V
VR=40V
VR=30V
VR=0V,f=1.0MHz
IF=IR=5mA
Irr=0.1XIR,RL=100
RATINGS AND CHARACTERISTIC CURVES SD101AW-SD101CW
FIG. 1- POWER DERATING CURVE
FIG. 2-TYPICAL FORWARD CHARACTERISTIC
10
See Note1
IF,FORWARD CURRENT(mA)
Pd.POWER DISSIPATION (mW)
500
400
300
200
100
0
0
1.0
0.1
0.01
25
50
75
100
125
150
0
0.2
TA,AMBIENT TEMPERATURE( C)
0.4
0.6
0.8
1.0
VF FORWARD VOLTAGE(V)
FIG.3- TYPICAL TOTAL CAPACITANCE
VS REVERSE VOLTAGE
FIG. 4- TYPICAL REVERSE CHARACTERISTICS
10
2
Tj=25 C
f=1MHz
C
IR,REVERSE CURRENT(uA)
CT, TOTAL CAPACITANCE(pF)
A
B
C
B
A
1
0
0
10
20
30
40
50
TA=125 C
1
TA =75 C
0.1
TA=25 C
0.01
TA=0 C
0.001
0.0001
0
TA =-65 C
10
VR REVERSE VOLTAGE.(V)
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20
30
40
VR REVERSE VOLTAGE.(V)
50
60