RS2ABF THRU RS2MBF SURFACE MOUNT FAST RECOVERY RECTIFIER Reverse Voltage - 50 to 1000 Volts SMBF FEATURES Cathode Band Top View 0.146(3.70) 0.138(3.50) Forward Current - 2.0 Amperes For surface mounted applications Low profile package Glass Passivated Chip Junction Easy to pick and place Fast reverse recovery time Lead free in comply with EU RoHS 2011/65/EU diretives 0.086(2.20) 0.075(1.90) 0.173(4.4) 0.165(4.2) 0.010(0.26) 0.0071(0.18) 0.051(1.30) 0.043(1.10) MECHANICAL DATA 0.051(1.30) 0.039(1.0) Case: JEDEC SMBF molded plastic body Terminals: leads solderable per MIL-STD-750, Method 2026 Mounting Position: Any Weight:57mg/0.002oz 0.216(5.5) 0.200(5.1) Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 C ambient temperature unless otherwise specified. Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%. MDD Catalog Number SYMBOLS RS2ABF RS2BBF RS2DBF RS2GBF RS2JBF RS2KBF RS2MBF R2AB Marking code Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current at TL=65 C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum instantaneous forward voltage at 2.0A Maximum DC reverse current TA=25 C at rated DC blocking voltage TA=125 C Maximum reverse recovery time (NOTE 1) Typical junction capacitance (NOTE 2) VRRM VRMS VDC 50 35 50 R2BB R2DB R2GB R2JB R2KB R2MB 100 70 100 200 140 200 400 280 400 600 420 600 800 560 800 1000 700 1000 I(AV) 2.0 IFSM UNITS VOLTS VOLTS VOLTS Amps 50 Amps VF 1.3 Volts IR 5.0 100.0 µA trr CJ Typical thermal resistance (NOTE 3) RθJA Operating junction and storage temperature range TJ,TSTG 150 250 40.0 65.0 -50 to +150 500 ns pF C/W C Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A 2.Measured at 1MHz and applied reverse voltage of 4.0V D.C. 3.P.C.B. mounted with 0.5x0.5”(12.7x12.7mm) copper pad areas ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ RATINGS AND CHARACTERISTIC CURVES RS2ABF THRU RS2MBF Fig.2 Typical Reverse Characteristics 2.5 100LFM 2.0 1.5 1.0 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.5 0.0 25 50 75 100 125 150 175 Instaneous Reverse Current（μ A） Average Forward Current (A) Fig.1 Forward Current Derating Curve 100 T J =125°C 10 1.0 T J =25°C 0.1 00 40 60 80 100 120 140 Fig.4 Typical Junction Capacitance 10 Junction Capacitance ( pF) Instaneous Forward Current (A) Fig.3 Typical Instaneous Forward Characteristics T J =25°C 1.0 0.1 pulse with 300μs 1% duty cycle 0.01 0.0 20 percent of Rated Peak Reverse Voltage (%) Ambient Temperature (°C) 100 10 T J =25°C 1 0.5 1.0 1.5 2.0 2.5 0.1 1.0 10 100 Reverse Voltage (V) Instaneous Forward Voltage (V) Peak Forward Surage Current (A) Fig.5 Maximum Non-Repetitive Peak Forward Surage Current 60 50 40 30 20 8.3 ms Single Half Sine Wave (JEDEC Method) 10 00 1 10 100 Number of Cycles ２０１４－０３ ０１版 ｈｔｔｐ：／／ｗｗｗ．ｍｉｃｒｏｄｉｏｄｅ．ｃｏｍ