ES1ABF THRU ES1JBF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A SMBF Cathode Band Top View FEATURES • For surface mounted applications • Low profile package • Glass Passivated Chip Junction • Superfast reverse recovery time • Lead free in comply with EU RoHS 2011/65/EU directives 0.145(3.70) 0.137(3.50) 0.087(2.20) 0.075(1.90) 0.174(4.40) 0.166(4.20) 0.012(0.30) 0.006(0.15) 0.055(1.40) 0.043(1.10) MECHANICAL DATA • Case: SMBF • Terminals: Solderable per MIL-STD-750, Method 2026 • A pprox. Weight: 57mg / 0.002oz 0.047(1.20) 0.028(0.70) 0.217(5.50) 0.201(5.10) Absolute Maximum Ratings and Characteristics Dimensions in inches and (millimeters) Ratings at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. Symbols ES1ABF ES1BBF ES1CBF ES1DBF ES1EBF ES1GBF ES1JBF Units Maximum Repetitive Peak Reverse Voltage V RRM 50 100 150 200 300 400 600 V Maximum RMS voltage V RMS 35 70 105 140 210 280 420 V Maximum DC Blocking Voltage V DC 50 100 150 200 300 400 600 V Maximum Average Forward Rectified Current at T L = 100 °C I F(AV) 1 A Peak Forward Surge Current 8.3 ms Single Half Sine Wave Superimposed on Rated Load (JEDEC Method) I FSM 35 A Maximum Forward Voltage at 1 A VF Parameter Maximum DC Reverse Current at Rated DC Blocking Voltage Ta = 25 °C Ta =125 °C Typical Junction Capacitance at V R =4V, f=1MHz Maximum Reverse Recovery Time 1） Typical Thermal Resistance 2） Operating and Storage Temperature Range 1.25 1 1.65 V IR 5 100 μA Cj 10 pF t rr 35 ns RθJA 85 °C/W T j , T stg -55 ~ +150 °C 1）Measured with IF = 0.5 A, IR = 1 A, Irr = 0.25 A 2 2）P.C.B. mounted with 0.5 X 0.5" (12.7 X 12.7 mm ) copper pad areas. 1 ES1ABF THRU ES1JBF Surface Mount Superfast Recovery Rectifier Reverse Voltage – 50 to 600 V Forward Current – 1 A Fig.1 Reverse Recovery Time Characteristic And Test Circuit Diagram 50 ohm Noninductive 10 ohm Noninductive t rr +0.5 D.U.T + PULSE GENERATOR Note 2 25Vdc approx 0 - -0.25 1 ohm OSCILLOSCOPE Note 1 NonInductive -1.0 Note：1.Rise Time = 7ns, max. Input Impedance = 1megohm,22pF. 2. Ries Time =10ns, max. Source Impedance = 50 ohms. 10ns/div Set time Base for 10ns/div Fig.3 Typical Reverse Characteristics 300 1.2 1.0 I R - Reverse Current ( μ A) Average Forward Current (A) Fig.2 Maximum Average Forward Current Rating 0.8 0.6 0.4 Single phase half wave resistive or inductive P.C.B mounted on 0.5×0.5"(12.7×12.7mm ) pad areas. 0.2 100 T J =125°C 10 T J =75°C 1.0 T J =25°C 0.1 0.0 25 50 75 100 125 150 175 0 Lead Temperature (°C) 100 Fig.5 Typical Junction Capacitance 14 10 T J =25°C Junction Capacitance ( pF) Instaneous Forward Current (A) 80 60 % of PIV.VOLTS Fig.4 Typical Forward Characteristics 1.0 ES1ABF~ES1DBF ES1EBF/WS1GBF 0.1 ES1JBF 0.01 0.001 0 0.5 1.0 1.5 2.0 40 30 20 10 8.3 ms Single Half Sine Wave (JEDEC Method) 00 10 10 8 6 T J =25°C f = 1.0MHz V sig = 50mV p-p 4 2 1 10 Reverse Voltage (V) Fig.4 Maximum Non-Repetitive Peak Forward Surage Current 1 12 0.1 2.5 Instaneous Forward Voltage (V) Peak Forward Surage Current (A) 40 20 100 Number of Cycles 2 100