TS3310 Data Sheet

TS3310
A True 150-nA IQ, 0.9-3.6VIN, Selectable 1.8-5VOUT Instant-OnTM Boost Converter
FEATURES
 Ultra-Efficient Boost Converter:
Active Mode, No-load Supply Current: 150nA
Efficiency: Up to 92%
Input Voltage Range: 0.9V-3.6V
Delivers up to 35mA at 3VSTORE from 1.2VIN
Single-inductor, Discontinuous Conduction
Mode Operation
No External Schottky Diode Required
 Pin-Selectable Output Voltages:
1.8V, 2.1V, 2.5V, 2.85V, 3V, 3.3V,
4.1V, and 5V
 User-enabled Secondary Output Load Switch
 10-Pin, Low-Profile, 2mm x 2mm TDFN Package
APPLICATIONS
Coin Cell-Powered Portable Equipment
Single Cell Li-ion or Alkaline Powered Equipment
Solar or Mechanical Energy Harvesting
Wireless Microphones
Wireless Remote Sensors
RFID Tags
Blood Glucose Meters
Personal Health-Monitoring Devices
ZigBee Radio Enabled Devices
Low-Energy Bluetooth Radio Enabled Devices
DESCRIPTION
The TS3310 is a low power boost switching regulator
with an industry leading low quiescent current of
150nA. The 150nA is the actual current consumed
from the battery while the output is in regulation. The
TS3310’s extremely low power internal circuitry
consumes 90nA on average, with periodic switching
cycles which service the load occurring at intervals of
up to 25 seconds, together yielding the average
150nA. The TS3310 steps up input voltages from
0.9V to 3.6V to eight selectable output voltages
ranging from 1.8V to 5V. The TS3310 includes two
output options, one being an always-on storage
output while the additional output is an output load
switch that is designed to supply burst-on loads in a
low duty cycle manner. The TS3310 operates in
Discontinuous Conduction Mode with an on-time
proportional to 1/VIN, thereby limiting the maximum
input current by the selection of the inductor value,
ensuring the input current does not drag down the
input source.
The extremely low quiescent current combined with
the output load switch make the TS3310 an ideal
choice for applications where the load can be
periodically powered from the output, while being
disconnected from the output storage capacitor when
the load is powered off to isolate the load’s leakage
current.
The TS3310 is fully specified over the -40°C to +85°C
temperature range and is available in a low-profile,
thermally-enhanced 10-pin 2x2mm TDFN package
with an exposed back-side paddle.
TYPICAL APPLICATION CIRCUIT
100
Efficiency vs STORE Current
IN=1.2V, STORE=3V
Circuit B
90
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN = CSTORE
10µF
1µF
CLSW
220pF
---
EFFICIENCY - %
80
Circuit A
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100
ISTORE - mA
Page 1
© 2014 Silicon Laboratories, Inc. All rights reserved.
TS3310
ABSOLUTE MAXIMUM RATINGS
IN to GND................................................................... -0.3V to +6.0V
STORE to GND .......................................................... -0.3V to +6.0V
OUT to GND............................................................... -0.3V to +6.0V
LSW to GND .............................................................. -0.3V to +6.0V
OUT_ON, S0, S1, S2 to GND .................................... -0.3V to +6.0V
VGOOD to GND ......................................................... -0.3V to +6.0V
Continuous Power Dissipation (TA = +70°C)
10-Pin TDFN22EP (Derate at 13.48mW/°C above +70°C) 1078mW
Operating Temperature Range ................................. -40°C to +85°C
Junction Temperature ............................................................+150°C
Storage Temperature Range .................................. -65°C to +150°C
Lead Temperature (Soldering, 10s)...................................... +300°C
Electrical and thermal stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only and functional operation of the device at these or any other condition beyond those indicated in the operational sections
of the specifications is not implied. Exposure to any absolute maximum rating conditions for extended periods may affect device reliability and
lifetime.
PACKAGE/ORDERING INFORMATION
ORDER NUMBER
PART
MARKING
TS3310ITD1022
AAW
TS3310ITD1022T
CARRIER
QUANTITY
TAPE
& REEL
-----
TAPE
& REEL
3000
Lead-free Program: Silicon Labs supplies only lead-free packaging.
Consult Silicon Labs for products specified with wider operating temperature ranges.
Page 2
TS3310 Rev. 1.0
TS3310
ELECTRICAL CHARACTERISTICS
VIN=1.2V, VOUT_ON=VIN, VPROG is the programmed voltage according to S2, S1, S0 pins set for STORE voltage of 3V unless otherwise
specified. TA=-40°C to 85°C. Typical values are at TA=+25°C unless otherwise specified. Please see Note 1.
PARAMETER
SYMBOL
Input Voltage Range
CONDITIONS
VIN
MIN
TYP
0.9
UVLO
0.855
Hysteresis
20
MAX
UNITS
3.6
V
0.9
V
Under Voltage Lock Out
STORE Voltage
VSTORE
ISTORE=50% of ISTORE(MAX),
0.9V<VIN<3.6V, at any
VPROG>VIN. TA=+25°C.
See Note 2.
0.97 x
VPROG
VPROG Tempco
No-Load Input Current,
IQ
NMOS
PMOS
On
Resistance
LOAD
SWITCH
NMOS
PMOS
LOAD
SWITCH
@ IN. See Note 3.
90
@ STORE. See Note 3.
30
@ IN. See Note 4.
150
TON
VIN=1.8V
0.8 x 2/VIN
RON
NMOS
RON
PMOS
RON
LOAD
SWITCH
RON
NMOS
RON
PMOS
RON
LOAD
SWITCH
VSTORE=1.8V
180
2/VIN
nA
1.2 x 2/VIN
0.8
1.3
1.1
1.65
1.1
1.65
650
VSTORE=3V
µsec
Ω
mΩ
650
80
90
95
% of target STORE voltage
%
Hysteresis
S0, S1, S2, OUT_ON
Input Leakage Current
% / °C
500
VVGOOD
S0, S1, S2
Input Voltage
V
I-Floor
VSTORE GOOD
VOUT_ON
Input Voltage
1.03 x
VPROG
0.027
Active-Mode
Boost Switch On-Time
VPROG
mV
5
VOUT_ON L
Low CMOS Logic Level
VOUT_ON H
High CMOS Logic Level
S0L, S1L,
S2L
Low CMOS Logic Level
S0H, S1H,
S2H
High CMOS Logic Level
0.2
V
0.6
0.2
V
0.6
5
nA
Note 1: All devices are 100% production tested at TA = +25°C and are guaranteed by characterization for TA = -40°C to +85°C, as specified.
Note 2: ISTORE(MAX) is provided as the Maximum Average STORE Current by the graph entitled “Expected Maximum STORE Output Current” in
the TS3310 Applications Section.
Note 3: VSTORE output is driven above regulation point. No switching is occurring.
Note 4: VSTORE=3V. L=100µH. CSTORE=1µF.
TS3310 Rev. 1.0
Page 3
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
100
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
Efficiency vs STORE Output Current
IN=1.2V, STORE=1.8V
100
Circuit B
90
80
EFFICIENCY - %
EFFICIENCY - %
60
Circuit A
50
40
30
60
40
30
20
10
10
0
0.0001 0.001 0.01
100
1
10
100
Efficiency vs STORE Output Current
IN=2.4V, STORE=3V
Efficiency vs STORE Output Current
IN=2V, STORE=5V
100
Circuit B
80
Circuit A
50
40
30
70
50
40
30
20
10
10
0.1
ISTORE - mA
1
10
100
Circuit B
60
20
0
0.0001 0.001 0.01
Circuit A
90
60
Page 4
0.1
ISTORE - mA
EFFICIENCY - %
70
1
ISTORE - mA
90
80
0.1
Circuit A
50
20
0
0.0001 0.001 0.01
EFFICIENCY - %
70
10
100
Circuit B
90
80
70
Efficiency vs STORE Output Current
IN=1.2V, STORE=3V
0
0.0001 0.001 0.01
0.1
1
10
100
ISTORE - mA
TS3310 Rev. 1.0
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
100
Efficiency vs STORE Output Current
IN=3V, STORE=5V
Circuit B
90
EFFICIENCY - %
80
Circuit A
70
60
50
40
30
20
10
0
0.0001 0.001 0.01
0.1
1
10
100
ISTORE - mA
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=1.8V)
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=1.8V)
800
800
640
+85°C
Active-Mode IQ - nA
Active-Mode IQ - nA
640
480
320
160
0
+25°C
+85°C
+25°C
-40°C
1.125
1.350
1.575
Input Voltage - V
TS3310 Rev. 1.0
320
160
-40°C
0.900
480
1.800
0
0.900
1.125
1.350
1.575
1.800
Input Voltage - V
Page 5
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
800
800
640
640
Active-Mode IQ - nA
Active-Mode IQ - nA
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=3V)
+85°C
480
320
+25°C
160
0
800
320
-40°C
-40°C
0.90
1.32
1.74
2.16
2.58
0
3.00
0.90
1.32
1.74
2.16
2.58
3.00
Input Voltage - V
Input Voltage - V
Active-Mode IQ vs Input Voltage
with No Load : Circuit A (STORE=5V)
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=5V)
800
+85°C
640
Active-Mode IQ - nA
Active-Mode IQ - nA
+25°C
160
640
480
+25°C
320
-40°C
160
480
320
+25°C
-40°C
160
2.00
2.25
2.50
2.75
Input Voltage - V
Page 6
+85°C
480
+85°C
0
Active-Mode IQ vs Input Voltage
with No Load : Circuit B (STORE=3V)
3.00
0
2.00
2.25
2.50
2.75
3.00
Input Voltage - V
TS3310 Rev. 1.0
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
1.25
-40°C
+25°C
1.00
0.75
0.50
0.001
0.01
0.1
1
ISTORE - mA
10
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=1.8V)
1.50
+25°C
Source Voltage - V
Source Voltage - V
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=1.8V)
1.50
+85°C
1.30
1.10
-40°C
0.90
0.70
0.001
100
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=3V)
2.00
-40°C
+85°C
0.01
0.1
ISTORE - mA
1
10
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=3V)
1.50
+85°C
Source Voltage - V
Source Voltage - V
1.75
1.50
1.25
+25°C
1.00
+85°C
0.75
0.50
0.001
0.01
TS3310 Rev. 1.0
0.1
1
ISTORE - mA
10
100
1.30
1.10
-40°C
+25°C
0.90
0.70
0.001
0.01
0.1
ISTORE - mA
1
10
Page 7
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
Minimum Start-Up Voltage vs STORE Output Current
Circuit A with 10Ω Source Resistance (STORE=5V)
3.6
Minimum Start-Up Voltage vs STORE Output Current
Circuit B with 10Ω Source Resistance (STORE=5V)
3.0
+25°C
3.0
Source Voltage - V
Source Voltage - V
3.3
2.7
2.4
-40°C
2.1
1.5
0.001
0.01
-40°C
2.0
+85°C
+85°C
+25°C
1.8
2.5
0.1
1
ISTORE - mA
10
1.5
100
0.001
Minimum Start-Up Voltage
vs Source Resistance : VSTORE=1.8V
Circuit A
Circuit B
1.0
0.5
0
5
10
15
Source Resistance - kΩ
20
Source Voltage - V
Source Voltage - V
1
10
2.0
1.5
Page 8
0.1
ISTORE - mA
Minimum Start-Up Voltage
vs Source Resistance : VSTORE=3V
2.0
0
0.01
Circuit A
1.5
Circuit B
1.0
0.5
0
0
5
10
15
20
Source Resistance - kΩ
TS3310 Rev. 1.0
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
STORE Output Current - mA
70
Maximum STORE Output Current vs Input Voltage
w/ VSTORE ≥ 96% of Target Voltage : Circuit B
11
STORE=1.8V
STORE=1.8V
60
50
STORE=5.0V
40
30
0.90
1.42
1.94
2.46
2.98
7
5
STORE=5.0V
3
3.50
STORE=3.0V
0.90
1.42
1.94
2.46
2.98
3.50
Input Voltage - V
Input Voltage - V
Active-Mode IQ : Circuit A with No-Load
VIN=1.2V, STORE=3V
Active-Mode IQ : Circuit A with No-Load
VIN=3V, STORE=3V
IFLOOR
90nA
IFLOOR
90nA
IPEAK
50mA/DIV
20
9
IPEAK
80mA/DIV
STORE Output Current - mA
Maximum STORE Output Current vs Input Voltage
w/ VSTORE ≥ 96% of Target Voltage : Circuit A
80
STORE=3.0V
5 s/DIV
TS3310 Rev. 1.0
10 s/DIV
Page 9
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
--STORE Load Step Response : Circuit B
VIN=1.2V, STORE=3V, ISTORE=3mA
IL
STORE
LSW
ISTORE
200mA/DIV 100mV/DIV 2V/DIV 30mA/DIV
IL
STORE
LSW
ISTORE
20mA/DIV 100mV/DIV 2V/DIV 3.33mA/DIV
STORE Load Step Response : Circuit A
VIN=1.2V, STORE=3V, ISTORE=24mA
STORE Output Voltage Ripple, Inductor Current,
and LSW Voltage : Circuit A
VIN=1.2V, STORE=3V, ISTORE(MAX)=35mA
STORE
20mV/DIV
IL
100mA/DIV
LSW
5V/DIV
STORE
50mV/DIV
IL
100mA/DIV
LSW
1V/DIV
STORE Output Voltage Ripple, Inductor Current,
and LSW Voltage : Circuit A
VIN=1.2V, STORE=3V, ISTORE=10mA
Page 10
TS3310 Rev. 1.0
TYPICAL PERFORMANCE CHARACTERISTICS
TS3310
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit A
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
--Startup : Circuit A with RIN=10Ω
VIN=2V, STORE=5V, ISTORE=0.5µA
IL
STORE LSW
200mA/DIV 1V/DIV 1V/DIV
IL
STORE LSW
100mA/DIV 5V/DIV 2V/DIV
VIN
1V/DIV
VIN
2V/DIV
Startup : Circuit A with RIN=10Ω
VIN=0.9V, STORE=1.8V, ISTORE=0.18µA
Startup : Circuit A with RIN=10Ω
VIN=1.2V, STORE=1.8V, ISTORE=10mA
VIN
1V/DIV
VIN
2V/DIV
IL
STORE LSW
200mA/DIV 1V/DIV 1V/DIV
IL
STORE LSW
100mA/DIV 5V/DIV 5V/DIV
Startup : Circuit A with RIN=10Ω
VIN=2V, STORE=5V, ISTORE=10mA
TS3310 Rev. 1.0
Page 11
TS3310
TYPICAL PERFORMANCE CHARACTERISTICS
VOUT_ON=GND, VVGOOD=GND, COUT=C1=C2=0.1µF, ISTORE=0A, IOUT=0A unless otherwise specified. Values are at TA=25°C unless otherwise
specified.
Circuit B
L
10µH
PN: CBC3225T100KR
100µH
PN: CBC3225T101KR
CIN=CSTORE
10µF
1µF
CLSW
220pF
---
IL
STORE LSW STORE Switch
100mA/DIV 2V/DIV 2V/DIV
to GND
Circuit A
Short STORE to GND for 1msec Recovery : Circuit A
VIN=1.2V, STORE=3V, ISTORE=9mA
OUT_ON Switched ON : Circuit A with COUT Removed
VIN=1.2V, STORE=3V, ISTORE=0.3µA, IOUT=3mA
OUT
STORE
OUT_ON
200mV/DIV 2V/DIV
2V/DIV
OUT
STORE
OUT_ON
200mV/DIV 2V/DIV
2V/DIV
IFLOOR
120nA
IFLOOR
120nA
OUT_ON Switched OFF : Circuit A with COUT Removed
VIN=1.2V, STORE=3V, ISTORE=0.3µA, IOUT=3mA
Page 12
TS3310 Rev. 1.0
TS3310
PIN FUNCTIONS
PIN
1
2
3
4
5
NAME
OUT_ON
S0
IN
S1
S2
6
VGOOD
7
GND
8
LSW
9
STORE
10
Exposed
Paddle
OUT
EP
FUNCTION
Logic Input. Turns on OUT switch.
Logic Input. Sets the regulated voltage at STORE.
Boost Input. Connect to input source. Connect Input capacitor, CIN.
Logic Input. Sets the regulated voltage at STORE.
Logic Input. Sets the regulated voltage at STORE.
Open Drain Output. High impedance when STORE>90% of regulation
voltage.
Ground. Connect this pin to the analog ground plane.
Inductor Connection. If using an inductor value ≤22µH, please see Table 3
for recommended CLSW values.
Regulated output voltage set by S0, S1, S2 logic. Connect Storage
capacitor, CSTORE.
Switched Output.
For best electrical and thermal performance, connect exposed backside
paddle to analog ground plane.
BLOCK DIAGRAM
TS3310 Rev. 1.0
Page 13
TS3310
THEORY OF OPERATION
The TS3310 is a boost switching regulator with an
industry leading low quiescent current of 150nA.The
150nA is the actual current consumed from the
battery while the output is in regulation. The
TS3310’s extremely low power internal circuitry
consumes 90nA on average, with periodic switching
cycles which service the load occurring at intervals
of up to 25 seconds, as displayed in the scope
capture entitled “Input Quiescent Current : Circuit A
with No-Load” on Page 9. The always-on output
voltage at STORE is regulated by a comparator
within the Regulation Control block. When a load
discharges CSTORE and causes the output voltage to
drop below the desired regulated voltage, switching
periods are initiated. When the output voltage is at
or above the desired regulated voltage, the
comparator causes switching periods to stop.
Each switching cycle includes an ON period and an
OFF period. During the ON period, the NMOS switch
turns on to ramp current in the inductor, while during
the OFF period, the NMOS switch turns off and the
PMOS switch turns on to discharge inductor current
into the CSTORE capacitor. When the ON and OFF
cycles have completed, the PMOS switch turns off.
The TS3310 operates in Discontinuous Conduction
Mode (DCM); during any given switching cycle, the
inductor current starts at and returns to zero. The
switching cycle timing is governed by the Control
block, which determines the ON and OFF periods
according to the input and output voltages,
regardless of the inductor current. The Control block
sets the ON period according to:
tON =
2µs∙V
VIN
Equation 1. ON Period Calculation
The choice of the inductor value, then, determines
the peak switching currents:
VIN × tON 2µs∙V
Ipk =
=
L
L
Equation 2. Peak-Current Calculation
The average input current, IIN(AVG), will vary
according to the load, since as the load is increased,
the time between switching cycles is decreased.
However, IIN(AVG) will never exceed IIN(AVG,MAX), the
maximum averaged input current, which represents
Page 14
the case where switching periods are continuously
initiated.
Ipk 1µs∙V
IIN(AVG,MAX) =
=
2
L
Equation 3. Maximum Average Input Current
Calculation
Equation 3 shows that an input current limit can be
set by choice of inductor value, set appropriately for
the capacity and output impedance of the input
source.
Maximum available output current is also a function
of inductor value for the case where switching cycles
are continuously initiated, the expected maximum
STORE output current is:
ISTORE(MAX) =
VIN
× IIN(AVG,MAX) × Eff
VOUT
Equation 4. Expected Maximum STORE Current
Calculation
The Regulation Controls within the Control block
monitor and control the regulation of the STORE
output voltage. By strapping a combination of logic
input pins (S0-S2) high or low, the STORE output
voltage can be one of 8 selectable output voltages.
For 5V STORE output operation, a minimum VIN of
2V is required.
S2
0
0
0
0
1
1
1
1
S1
0
0
1
1
0
0
1
1
S0
0
1
0
1
0
1
0
1
STORE
1.8V
2.5V
3.3V
5.0V
2.1V
2.85V
3.0V
4.1V
Table 1. STORE Output Voltage Options
The TS3310 provides an additional Instant-On
switched OUT output that completely isolates loads
from the storage capacitor at the STORE output.
The OUT load switch is controlled by the logic input
pin OUT_ON.
The TS3310 provides an Open-Drain VGOOD
output that assumes a high impedance once the
STORE output is greater than 90% of the target
voltage.
TS3310 Rev. 1.0
TS3310
Expected Maximum STORE Output Current
100
Maximum STORE Current - mA
The TS3310 comes with an Under Voltage Lockout
(UVLO) feature at 0.855V with a 20mV hysteresis.
The UVLO feature monitors the input voltage and
inhibits the Switching Cycle Controls from initiating
switching cycles if the VIN is too low. This ensures no
switching currents are drawn from the input to
collapse the voltage at the terminals of the battery
when the internal resistance of the battery is high.
Figure 1 displays the UVLO feature for the TS3310.
IN
1V/DIV
UVLO : Circuit B with RIN=50Ω
VIN=1.2V, STORE=3V, ISTORE=0.3µA
10
VSTORE/VIN = 1
VSTORE/VIN = 2
1
VSTORE/VIN = 3
VSTORE/VIN = 4
0.1
10
100
Inductor Value - µH
1000
LSW
2V/DIV
Figure 2. Expected Maximum STORE Output Current
with 85% Efficiency vs Inductor Value
STORE
2V/DIV
Maximum Input Current from Source vs Inductor Value
Figure 1. TS3310, UVLO=0.855V
APPLICATIONS INFORMATION
Inductor Selection
When selecting an inductor value, the value should
be chosen based on output current requirements. If
the input source is a small battery, make sure the
choice of the inductor value considers the maximum
input current that the source battery can support
(based on series resistance). For example, some
small button cell batteries can exhibit 5Ω series
resistance, therefore a 20mA maximum input current
may be appropriate (100mV drop). Consider using a
large STORE capacitor to support peak loads for
small batteries – see section “Bursted Load with Big
Store Buffer Capacitor”.
TS3310 Rev. 1.0
Maximum Avg Input Current - mA
IL
20mA/DIV
100
10
1
10
100
Inductor Value - µH
1000
Figure 3. IIN(AVG,MAX) vs Inductor Value
A low ESR, shielded inductor is recommended.
Depending upon the application, the inductor value
will vary. For applications with load currents less
than a few milliamperes, a 100µH inductor is
recommended. As shown in the Efficiency Curves on
Pages 4 and 5, the efficiency is greater with a larger
inductor value for smaller load currents. Please refer
to the two ‘Maximum Store Current vs Input Voltage’
graphs found on Page 9. Circuit A which uses a
10µH inductor is able to source larger load currents
than that of Circuit B with a 100µH inductor due to
the larger peak currents.
Page 15
TS3310
Inductor Current Handling Requirement
Peak Inductor Current - mA
1000
CLSW
--100pF
220pF
Table 3. Recommended CLSW Values
100
10
1
10
100
Inductor Value - µH
1000
Figure 4. Inductor Peak Current vs Inductor Value
The chosen inductor’s saturation current for a
specific inductor value should be at least 50%
greater than the peak inductor current value
displayed in Figure 4, entitled ‘Inductor Current
Handling Requirements’. Table 2 provides a list of
some inductor manufacturers.
Inductors
Taiyo Yuden
www.t-yuden.com
Murata
www.murata.com
Coilcraft
www.coilcraft.com
Sumida
www.sumida.com
Table 2. Inductor Manufacturers
Tables 4 and 5 show some example inductors for
values of 10µH and 100µH that may be used for
circuit A or B. The tables include the inductors’ Rdc
(inductor series dc resistance or ESR), saturation
current, and dimensions. As mentioned previously,
the inductor’s saturation current should always be
greater than 150% of the peak inductor current;
therefore the appropriate size and efficiency
(dependent upon ESR) may be chosen based on the
application’s requirements.
To guarantee maximum output power for 10µH and
22µH operation, a CLSW capacitor should be placed
at the LSW pin to ground. Please refer to Table 3 for
the recommended CLSW values. A ceramic capacitor
with a NPO or COG dielectric is recommended for
CLSW with a minimum voltage rating of 50V.
Page 16
Inductor Value
>22µH
22µH
10µH
Inductor Value
P/N
Inductor
Type
Rdc
Saturation
Current
(LxWxH)
(mm)
10µH
CBC20166T100K
CBC
2016
0.82 Ω
380mA
2x1.6x1.6
10µH
CBC2518T100K
CBC
2518
0.36 Ω
480mA
2.5x1.8x1.8
10µH
CBC3225T100KR
CBC
3225
0.133 Ω
900mA
3.2x2.5x2.5
100µH
CB2016T101K
CB
2016
4.5 Ω
70mA
2x1.6x1.6
100µH
CB2518T101K
CB
2518
2.1 Ω
60mA
2.5x1.8x1.8
100µH
CBC2518T101K
CBC
2518
3.7 Ω
160mA
2.5x1.8x1.8
100µH
CBC3225T101KR
CBC
3225
1.4 Ω
270mA
3.2x2.5x2.5
Table 4. Taiyo-Yuden Example Inductors
Inductor Value
P/N
Inductor
Series
Rdc
Saturation
Current
(LxWxH)
(mm)
10µH
LQH32CN100K33
LQH
32C_33
0.3 Ω
450mA
3.2x2.5x2.0
10µH
LQH32CN100K53
LQH
32C_53
0.3 Ω
450mA
3.2x2.5x1.55
10µH
LQH43CN100K03
LQH
43C
0.24 Ω
650mA
4.5x3.6x2.6
100µH
LQH32CN101K23
LQH
32C_23
3.5 Ω
100mA
3.2x2.5x2.0
100µH
LQH32CN101K53
LQH
32C_53
3.5 Ω
100mA
3.2x2.5x1.55
100µH
LQH43CN101K03
LQH
43C
2.2 Ω
190mA
4.5x3.6x2.8
Table 5. Murata Example Inductors
Input and STORE Capacitor Selection
Ceramic capacitors are recommended for CIN and
CSTORE, due to ceramics’ extremely low leakage
currents (generally limited by very high insulation
resistance). Larger value ceramics (10µF or greater)
may use high constant dielectric materials, such as
X5R and X7R. These materials exhibit a strong
voltage coefficient and exhibit substantially lower
capacitance than rated when operated near the
maximum specified voltage. For these types of
capacitors, use a 10V or greater voltage rating.
TS3310 Rev. 1.0
TS3310
The STORE voltage output ripple can be reduced by
increasing the value of CSTORE. Figure 5 displays the
STORE output voltage ripple for two different
storage capacitor values. The output voltage ripple
reaches a floor value when the internal voltage
comparator hysteresis becomes the dominant
source of ripple. Below this level, larger capacitance
does not help reduce the ripple.
STORE Output Voltage Ripple
L=10µH, CIN=10µF
VIN=1.2V, STORE=3V, ISTORE=0.3µA
demands 100mA current when it is powered on.
Also in this example, the load continues to consume
10µA of leakage current when off. By attaching the
load to OUT when the load isn’t used, the TS3310
isolates the 10µA current so that overall quiescent
current can be maintained. A 220µF storage
capacitor is used for CSTORE so that it can store the
necessary charge to supply the 100mA load current.
The microcontroller brings the Instant-On Load
Switch, OUT_ON, high when the load needs to be
powered on. The TS3310 on average consumes
160nA between load bursts.
STORE
CSTORE=10µF
100mV/DIV
STORE
CSTORE=33µF
100mV/DIV
To prevent the circuit from overloading the LR44
Coin Cell Battery, a 100µH inductor is used to
ensure the TS3310 only draws 10mA of current on
average while recharging CSTORE after the load is
powered off. After the load has been powered off,
the TS3310 recharges the 220µF CSTORE capacitor
within 6msec and is ready for the next bursted cycle.
Figure 7 displays the load being powered on for a
200µsec period and the recharge of the 220µF
CSTORE within 6msec.
Figure 5. Output Voltage Ripple Comparison
Bursted Load with Big STORE Buffer Capacitor
The TS3310 provides a switched OUT output that is
capable of sourcing short bursts of large output
current by utilizing a large storage capacitor at the
STORE output. Figure 6 displays an application
circuit that utilizes this functionality.
The circuit is powered from a LR44 1.5V Coin Cell
Battery. In this example, the load needs to be
powered on once every 20 seconds for 200µsec
periods. The load requires a 3.3V source and
IL
STORE
OUT OUT_ON
20mA/DIV 200mV/DIV 2V/DIV 5V/DIV
Bursted-Load with Big Store Buffer Capacitor
L=100µH,COUT=0.1µF CIN=1µF, CSTORE=220µF
VIN=1.2V, STORE=3.3V, IOUT=100mA
Figure 7. 220µF CSTORE Recovery Scope Capture
Figure 6. Bursted Load Application Circuit
TS3310 Rev. 1.0
Page 17
TS3310
PACKAGE OUTLINE DRAWING
0.900±0.050
Exp.DAP
2.000±0.050
PIN #1
IDENTIFICATION
0.300±0.050
0.400 Bsc
Pin 1 DOT BY
MARKING
10L
(2x2mm)
1.400±0.050
Exp.DAP
2.000±0.050
0.200±0.050
TOP VIEW
BOTTOM VIEW
NOTE!
· All dimensions in mm.
· This part is compliant with JEDEC MO-229 spec
A
0.203 Ref
0.000-0.050
A
MAX.
0.800
NOM.
0.750
MIN.
0.700
SIDE VIEW
Patent Notice
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analog-intensive mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class
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Page 18
TS3310 Rev. 1.0