AN800 Si4455 AND ARIB STD-T108 C OMPLIANCE AT 920 M H Z 1. Introduction This document demonstrates the compliance of the Si4455 (B0, B1, C0, C1, C2) RFIC with the regulatory requirements of ARIB STD-T108 in the 920 MHz band. The measurements within this document were taken with an Si4455-B1 RFIC mounted on a 4455-PCE10D915M / 4455CPCE10D915M / 4455-PCE13D915M / 4455CPCE13D915M Direct-tie RF Pico Board (see the Reference Design Schematics in Section 5). The compliance investigations were taken with a fundamental output power of +13, +10 and 0 dBm. 1.1. Summary of Measured Results A summary of measured results is provided in Table 1. An overview of the measured results may be stated as follows: For +13 dBm fundamental output power: Selection of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC not compliant with the ARIB STD-T108 standard, when using one unit radio channel (N=1) Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant in the 922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=200 kbps and Deviation=100 kHz makes the Si4455 RFIC compliant in the 922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with practically no margins when using two unit radio channels (N=2) Selection of a modulation protocol with DR=180 kbps and Deviation=90 kHz makes the Si4455 RFIC compliant in the 922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using two unit radio channels (N=2) Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with no margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=70 kbps and Deviation=35 kHz makes the Si4455 RFIC compliant in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=200 kbps and Deviation=100 kHz makes the Si4455 RFIC not compliant in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard when using two unit radio channels (N=2) Selection of a modulation protocol with DR=150 kbps and Deviation=75 kHz makes the Si4455 RFIC compliant in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with practically no margins when using two unit radio channels (N=2) Selection of a modulation protocol with DR=120 kbps and Deviation=60 kHz makes the Si4455 RFIC compliant in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using two unit radio channels (N=2) For +10 dBm fundamental output power: Selection of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC compliant with the ARIB STD-T108 standard, but with practically no margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant with the ARIB STD-T108 standard with acceptable margins when using one unit radio channel (N=1) Lumping two units of radio channels (N=2) in the 920.6 to 922.2 MHz frequency band compliance can be achieved with acceptable margins with selecting the data rate up to 150 kbps with 75 kHz deviation Lumping two units of radio channels (N=2) in the 922.4 to 928.0 MHz frequency band compliance can be achieved with acceptable margins with selecting the data rate up to 200 kbps with 100 kHz deviation For 0 dBm fundamental output power: Selection Rev. 0.2 of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC compliant with Copyright © 2014 by Silicon Laboratories AN800 AN800 the ARIB STD-T108 standard in the 916.0 to 916.8 Hz and 920.6 to 928.0 MHz bands, but with practically no margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant with the ARIB STD-T108 standard in the 916.0 to 916.8 MHz and 920.6 to 928.0 MHz bands with great margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=50 kbps and Deviation=25 kHz makes the Si4455 RFIC compliant with the ARIB STD-T108 standard in the 928.15 to 929.65 MHz band, but with practically no margins when using one unit radio channel (N=1) Selection of a modulation protocol with DR=40 kbps and Deviation=20 kHz makes the Si4455 RFIC compliant with the ARIB STD-T108 standard in the 928.15 to 929.65 MHz band with great margins when using one unit radio channel (N=1) Table 1. Summary of Measured Results Spec Par Parameter Condition Limit Measured Margin 3.2(1) TX Antenna Power 920.6 to 923.4 MHz +24 dBm 13.00 dBm 11.00 dB 920.6 to 923.4 MHz +24 dBm 10.31 dBm 13.69 dB 923.6 to 928.0 MHz +13 dBm 13.00 dBm 0.00 dB 923.6 to 928.0 MHz +13 dBm 10.31 dBm 2.69 dB 916.0 to 916.8 MHz 928.15 to 929.65 MHz 0 dBm –0.02 dBm 0.02 dB +0.5/–1.5 dB Comply 3.2(2) Tolerance of Antenna Power +20%/–80% 3.2(3) Radio Channel N=1 to 5 3.2(4) Frequency Tolerance ±20 ppm N/A N/A 3.2(5) Modulation Method N/A N/A N/A 3.2(6) Occupied Frequency Bandwidth 916.0 to 916.8 MHz 920.6 to 928.0 MHz DR=100 kbps, N=1 200 kHz 177.7 kHz 22.3 kHz 916.0 to 916.8 MHz 920.6 to 928.0 MHz DR=80 kbps, N=1 200 kHz 141.0 kHz 59.0 kHz 916.0 to 916.8 MHz 920.6 to 928.0 MHz DR=200 kbps, N=2 400 kHz 341.8 kHz 58.2 kHz 928.15 to 929.65 MHz DR=50 kbps, N=1 100 kHz 87.25 kHz 12.75 kHz 928.15 to 929.65 MHz DR=100 kbps, N=2 200 kHz 177.2 kHz 22.8 kHz Comply Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the standard limit. Red text indicates that the given parameter fails the standard limit.” 2 Rev. 0.2 AN800 Table 1. Summary of Measured Results (Continued) Spec Par 3.2(7) Parameter Condition Limit Measured Margin Adjacent Channel Leakage Power 920.6 to 928.0 MHz 10 dBm, DR=100 kbps, N=1 –15 dBm –15.33 dBm 0.33 dB 920.6 to 928.0 MHz 10 dBm, DR=80 kbps, N=1 –15 dBm –24.26 dBm 9.26 dB 920.6 to 928.0 MHz 10 dBm, DR=100 kbps, N=2 –15 dBm –38.86 dBm 23.86 dB 920.6 to 928.0 MHz 10 dBm, DR=200 kbps, N=2 –15 dBm –18.01 dBm 3.01 dB 916.0 to 916.8 MHz 0 dBm, DR=100 kbps, N=1 –26 dBm –26.01 dBm 0.01 dB 916.0 to 916.8 MHz 0 dBm, DR=100 kbps, N=2 –26 dBm –49.6 dBm 23.6 dB 916.0 to 916.8 MHz 0 dBm, DR=80 kbps, N=1 –26 dBm –35.17 dBm 9.17 dB 928.15 to 929.65 MHz 0 dBm, DR=50 kbps, N=1 –26 Bm –26.34 dBm 0.34 dB 928.15 to 929.65 MHz 0 dBm, DR=50 kbps, N=2 –26 dBm –51.07 dBm 25.07 dB 928.15 to 929.65 MHz 0 dBm, DR=40 kbps, N=1 –26 dBm –35.53 dBm 9.53 dB 920.6 to 928.0 MHz 13 dBm, DR=100 kbps, N=1 –15 dBm –12.9 dBm -2.1 dB 920.6 to 928.0 MHz 13 dBm, DR=80 kbps, N=1 –15 dBm –22.03 dBm 7.03 dB 920.6 to 928.0 MHz 13 dBm, DR=100 kbps, N=2 –15 dBm –36.04 dBm 21.04 dB 920.6 to 928.0 MHz 13 dBm, DR=200 kbps, N=2 –15 dBm –15.48 dBm 0.48 dB 920.6 to 928.0 MHz 13 dBm, DR=180 kbps, N=2 –15 dBm –19.43 dBm 4.43 dB Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the standard limit. Red text indicates that the given parameter fails the standard limit.” Rev. 0.2 3 AN800 Table 1. Summary of Measured Results (Continued) Spec Par Parameter Condition Limit Measured Margin 3.2(7) Spectral Mask 922.4 to 928.0 MHz 10 dBm, DR=100 kbps, N=1 –36 dBm/100 kHz –41.81 dBm 5.81 dB 922.4 to 928.0 MHz 10 dBm, DR=100 kbps, N=2 –36 dBm/100 kHz –44.75 dBm 8.75 dB 922.4 to 928.0 MHz 10 dBm, DR=200 kbps, N=2 –36 dBm/100 kHz –39.27 dBm 3.27 dB 920.6 to 922.2 MHz 10 dBm, DR=100 kbps, N=1 –36 dBm/100 kHz 920.6 to 922.2 MHz 10 dBm, DR=80 kbps, N=1 –36 dBm/100 kHz –38.93 dBm 2.93 dB 920.6 to 922.2 MHz 10 dBm, DR=100 kbps, N=2 –36 dBm/100 kHz –41.53 dBm 5.53 dB 920.6 to 922.2 MHz 10 dBm, DR=150 kbps, N=2 –36 dBm/100 kHz –39.09 dBm 3.09 dB 920.6 to 922.2 MHz 10 dBm, DR=200 kbps, N=2 –36 dBm/100 kHz 916.0 to 916.8 MHz 0 dBm, DR=100 kbps, N=1 –36 dBm/100 kHz –52.07 dBm 16.07 dB 928.15 to 929.65 MHz 0 dBm, DR=50 kbps, N=1 –36 dBm/100 kHz –49.97 dBm 13.97 dB 922.4 to 928.0 MHz 13 dBm, DR=100 kbps, N=1 –36 dBm/100 kHz 922.4 to 928.0 MHz 13 dBm, DR=80 kbps, N=1 –36 dBm/100 kHz –39.30 dBm 3.30 dB 922.4 to 928.0 MHz 13 dBm, DR=100 kbps, N=2 –36 dBm/100 kHz –42.70 dBm 6.70 dB 922.4 to 928.0 MHz 13 dBm, DR=200 kbps, N=2 –36 dBm/100 kHz –36.72 dBm 0.72 dB 922.4 to 928.0 MHz 13 dBm, DR=180 kbps, N=2 –36 dBm/100 kHz –38.38 dBm 2.38 dB 920.6 to 922.2 MHz 13 dBm, DR=100 kbps, N=1 –36 dBm/100 kHz 920.6 to 922.2 MHz 13 dBm, DR=80 kbps, N=1 –36 dBm/100 kHz –36.60 dBm 0.60 dB 920.6 to 922.2 MHz 13 dBm, DR=70 kbps, N=1 –36 dBm/100 kHz –39.21 dBm 3.21 dB 3.2(7) Spectral Mask 0.87 dB –18.88 dB 2.85 dB –1.72 dB Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the standard limit. Red text indicates that the given parameter fails the standard limit.” 4 Rev. 0.2 AN800 Table 1. Summary of Measured Results (Continued) Spec Par 3.2(8) 3.2(8) 3.2(8) Parameter Spurious Emissions TX, 10 mW Spurious Emissions TX, 20 mW Spurious Emissions TX, 20 mW Condition Limit Measured Margin 920.6 to 922.2 MHz 13 dBm, DR=100 kbps, N=2 –36 dBm/100 kHz –39.27 dBm 3.27 dB 920.6 to 922.2 MHz 13 dBm, DR=200 kbps, N=2 –36 dBm/100 kHz –14.66 dBm –21.34 dB 920.6 to 922.2 MHz 13 dBm, DR=150 kbps, N=2 –36 dBm/100 kHz –36.70 dBm 0.70 dB 920.6 to 922.2 MHz 13 dBm, DR=120 kbps, N=2 –36 dBm/100 kHz F ≤ 710 MHz –36 dBm/100 kHz –67.08 dBm 31.08 dB 710 MHz < F ≤ 900 MHz –55 dBm/1 MHz –62.62 dBm 7.62 dB 900 MHz < F ≤ 915 MHz –55 dBm/100 kHz –74.52 dBm 19.52 dB 915 MHz < F ≤ 920.3 MHz –36 dBm/100 kHz –68.17 dBm 32.17 dB 920.3 MHz < F ≤ 924.3 MHz –36 dBm/100 kHz –56.19 dBm 20.19 dB 924.3 MHz < F ≤ 930 MHz –36 dBm/100 kHz –41.6 dBm 5.6 dB 930 MHz < F ≤ 1 GHz –55 dBm/100 kHz –63.08 dBm 8.08 dB 1 GHz < F ≤ 1.215 GHz –48 dBm/1 MHz –66.04 dBm 18.04 dB F > 1.215 GHz –30 dBm/1 MHz –39.44 dBm 9.44 dB F ≤ 710 MHz –36 dBm/100 kHz –73.77 dBm 37.77 dB 710 MHz < F ≤ 900 MHz –55 dBm/1 MHz –61.80 dBm 6.80 dB 900 MHz < F ≤ 915 MHz –55 dBm/100 kHz –72.92 dBm 17.92 dB 915 MHz < F ≤ 920.3 MHz –36 dBm/100 kHz –66.00 dBm 30.00 dB 920.3 MHz < F ≤ 924.3 MHz –36 dBm/100 kHz –53.69 dBm 17.69 dB 924.3 MHz < F ≤ 930 MHz –36 dBm/100 kHz –39.24 dBm 3.24 dB 930 MHz < F ≤ 1 GHz –55 dBm/100 kHz –60.73 dBm 5.73 dB 1 GHz < F ≤ 1.215 GHz –48 dBm/1 MHz –64.13 dBm 16.13 dB F > 1.215 GHz –30 dBm/1 MHz –39.69 dBm 9.69 dB 3.33 dB Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the standard limit. Red text indicates that the given parameter fails the standard limit.” Rev. 0.2 5 AN800 Table 1. Summary of Measured Results (Continued) Spec Par 3.3 3.3 Parameter Condition Limit Measured Margin RX Conducted Spurious Emissions 10 mW schematic F ≤ 710 MHz –54 dBm/100 kHz –85.21 dBm 31.21 dB 710 MHz < F ≤ 900 MHz –55 dBm/1 MHz –80.38 dBm 25.38 dB 900 MHz < F ≤ 915 MHz –55 dBm/100 kHz –93.17 dBm 38.17 dB 915 MHz < F ≤ 930 MHz –54 dBm/100 kHz –93.15 dBm 39.15 dB 930 MHz < F ≤ 1 GHz –55 dBm/100 kHz –91.13 dBm 36.13 dB F > 1 GHz –47 dBm/1 MHz –72.71 dBm 25.71 dB F ≤ 710 MHz –54 dBm/100 kHz –88.30 dBm 34.30 dB 710 MHz < F ≤ 900 MHz –55 dBm/1 MHz –80.24 dBm 25.24 dB 900 MHz < F ≤ 915 MHz –55 dBm/100 kHz –92.83 dBm 37.83 dB 915 MHz < F ≤ 930 MHz –54 dBm/100 kHz –92.88 dBm 38.88 dB 930 MHz < F ≤ 1 GHz –55 dBm/100 kHz –90.85 dBm 35.85 dB F > 1 GHz –47 dBm/1 MHz –69.68 dBm 22.68 dB RX Conducted Spurious Emissions 20 mW schematic Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the standard limit. Red text indicates that the given parameter fails the standard limit.” 6 Rev. 0.2 AN800 2. Summary ARIB STD-T108 Requirements in the 920 MHz Band The main requirements of ARIB STD-T108 in the 920 MHz band are summarized in this section. 2.1. ARIB STD-T108 3.2(1) Antenna Power The antenna power shall be less than or equal to 250 mW (+24 dBm). However, the antenna power shall be less than or equal to 1 mW (0 dBm) for radio channels consisting of only unit radio channel with center frequencies ranging from 916.0 MHz to 916.8 MHz and from 928.15 MHz to 929.65 MHz, and shall be less than or equal to 20 mW (+13 dBm) with center frequencies ranging from 923.6 MHz to 928.0 MHz. 2.2. ARIB STD-T108 3.2(2) Tolerance of Antenna Power The tolerance of the antenna power shall be within +20% to –80%. 2.3. ARIB STD-T108 3.2(3) Radio Channel A radio channel shall consist of up to five consecutive unit radio channels. Unit radio channels are channels with bandwidths of 200 kHz with center frequencies of 916.0 MHz + 200 kHz x n (with n = positive integer greater than or equal to zero) for center frequencies between 916.0 MHz to 916.8 MHz, or center frequencies of 920.6 MHz + 200 kHz x n for center frequencies between 920.6 MHz to 928.0 MHz. Within the frequency range of 928.15 MHz to 929.65 MHz, the channel bandwidth is 100 kHz and the center frequency shall be set at 928.15 MHz + 100 kHz x n. 2.4. ARIB STD-T108 3.2(4) Frequency Tolerance The frequency tolerance shall be within ±20 ppm. 2.5. ARIB STD-T108 3.2(5) Modulation Method The modulation method is not specified. All measurements performed in this document were taken with 2GFSK modulation. 2.6. ARIB STD-T108 3.2(6) Occupied Frequency Bandwidth The occupied frequency bandwidth shall be less than or equal to 200 kHz x n (with n = the number of unit radio channels constituting the radio channel and is an integer from 1 to 5). However, the occupied frequency bandwidth shall be less than 100 kHz x n when the center frequencies are within the range of 928.15 MHz to 929.65 MHz. 2.7. ARIB STD-T108 3.2(7) Adjacent Channel Leakage Power The standard provides for a variety of adjacent channel leakage power spectral masks as a function of channel center frequency and output power level. Rev. 0.2 7 AN800 2.7.1. Antenna Power=1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz Within the frequency bands of 916.0 to 916.8 MHz and 920.6 to 928.0 MHz, the channel spectral mask shall be as shown in Figure 1 when operating with antenna power of less than or equal to 1 mW. The adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –26 dBm. Figure 1. Channel Spectral Mask (1 mW, 916.0 to 916.8 MHz and 920.6 to 928.0 MHz) 2.7.2. Antenna Power=20 mW, Freq. Band=922.4 to 928.0 MHz Within the frequency band of 922.4 to 928.0 MHz, the channel spectral mask shall be as shown in Figure 2 when operating with antenna power of more than 1 mW and less than or equal to 20 mW. The adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –15 dBm. Figure 2. Channel Spectral Mask (20 mW, 922.4 to 928.0 MHz) 8 Rev. 0.2 AN800 2.7.3. Antenna Power=250 mW, Freq. Band=922.4 to 923.4 MHz Within the frequency band of 922.4 to 923.4 MHz, the channel spectral mask shall be shown as in Figure 3 when operating with antenna power of more than 20 mW and less than or equal to 250 mW. The adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –5 dBm. Figure 3. Channel Spectral Mask (250 mW, 922.4 to 923.4 MHz) 2.7.4. Antenna Power=20 mW, Freq. Band=920.6 to 922.2 MHz Within the frequency band of 920.6 to 922.2 MHz, the channel spectral mask shall be as shown in Figure 4 when operating with antenna power of more than 1 mW and less than or equal to 20 mW. The adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –15 dBm. Figure 4. Channel Spectral Mask (20 mW, 920.6 to 922.2 MHz) Rev. 0.2 9 AN800 2.7.5. Antenna Power=250 mW, Freq. Band=920.6 to 922.2 MHz Within the frequency band of 920.6 to 922.2 MHz, the channel spectral mask shall be as shown in Figure 5 when operating with antenna power of more than 20 mW and less than or equal to 250 mW. The adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –5 dBm. Figure 5. Channel Spectral Mask (250 mW, 920.6 to 922.2 MHz) 2.7.6. Antenna Power=1 mW, Freq. Band=928.15 to 929.65 MHz Within the frequency band of 928.15 to 929.65 MHz, the channel spectral mask shall be as shown in Figure 6 when operating with antenna power of less than or equal to 1 mW. The adjacent channel leakage power within the 100 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –26 dBm. Figure 6. Channel Spectral Mask (1 mW, 928.15 to 929.65 MHz) 10 Rev. 0.2 AN800 2.8. ARIB STD-T108 3.2(8) TX Spurious Emissions The spurious emission strength at the antenna input in TX mode shall be less than the values shown in Table 2. Table 2. TX Spurious Emission Specifications Frequency Band Spurious Emission Strength (average power) Reference BW F ≤ 710 MHz –36 dBm 100 kHz 710 MHz < F ≤ 900 MHz –55 dBm 1 MHz 900 MHz < F ≤ 915 MHz –55 dBm 100 kHz 915 MHz < F ≤ 920.3 MHz –36 dBm 100 kHz 920.3 MHz < F ≤ 924.3 MHz (except for |f – fc| ≤ 200 + 100 x n kHz) –36 dBm (Pout ≤ 20 mW) 100 kHz –29 dBm (Pout > 20 mW) 100 kHz 924.3 MHz < f ≤ 930.0 MHz (except for |f – fc| ≤ 200 + 100 x n kHz when unit channel bandwidth is 200 kHz) –36 dBm 100 kHz 924.3 MHz < f ≤ 930.0 MHz (except for |f – fc| ≤ 100 + 50 x n kHz when unit channel bandwidth is 100 kHz) –36 dBm 100 kHz 930 MHz < F ≤ 1 GHz –55 dBm 100 kHz 1 GHz < F ≤ 1.215 GHz –48 dBm 1 MHz F > 1.215 GHz –30 dBm 1 MHz Rev. 0.2 11 AN800 2.9. ARIB STD-T108 3.3 Receiver Conducted Spurious Emissions The conducted spurious emission strength at the receiver input shall be less than the values shown in Table 3. Table 3. RX Conducted Spurious Emission Specifications 12 Frequency Band Spurious Emission Strength Reference BW F ≤ 710 MHz –54 dBm 100 kHz 710 MHz < F ≤ 900 MHz –55 dBm 1 MHz 900 MHz < F ≤ 915 MHz –55 dBm 100 kHz 915 MHz < F ≤ 930 MHz –54 dBm 100 kHz 930 MHz < F ≤ 1 GHz –55 dBm 100 kHz F > 1 GHz –47 dBm 1 MHz Rev. 0.2 AN800 3. TX Measurement Results 3.1. ARIB STD-T108 3.2(1) Antenna Power The allowed transmitter antenna power is specified as less than 20 mW (+13 dBm) within the frequency range of 920.6 MHz to 928.0 MHz (however up to +24 dBm antenna power is also allowed in the band of 920.6 to 923.4 MHz). The measured transmitter antenna power within this frequency range is shown in Figure 7. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(1) for Transmit Antenna Power. Limit: 20 mW=+13 dBm (max) Measured: +13.00 dBm Margin: 0.00 dB (PASS) Figure 7. Transmitter Antenna Power (20 mW, 920.6 to 928.0 MHz) Rev. 0.2 13 AN800 The allowed transmitter antenna power is specified as less than 20 mW (+13 dBm) within the frequency range of 920.6 MHz to 928.0 MHz (however up to +24 dBm antenna power is allowed in the band of 920.6 to 923.4 MHz). The measured transmitter antenna power within this frequency range with adjusting to the output power to 10 mW (since the output power of the targeted applications with Si4455 is typically +10 dBm) is shown in Figure 8. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(1) for Transmit Antenna Power. Limit: 20 mW=+13 dBm (max) +10.31 dBm Margin: 2.69 dB (PASS) Measured: Figure 8. Transmitter Antenna Power (10 mW, 920.6 to 928.0 MHz) 14 Rev. 0.2 AN800 The allowed transmitter antenna power is specified as less than 1 mW (0 dBm) within the frequency range of 916.0 MHz to 916.8 MHz and from 928.15 MHz to 929.65 MHz. The measured transmitter antenna power within this frequency range is shown in Figure 9. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(1) for Transmit Antenna Power. Limit: 1 mW=0 dBm (max) –0.02 dBm Margin: 0.02 dB (PASS) Measured: Figure 9. Transmitter Antenna Power (1 mW, 916.0 to 916.8 MHz and from 928.15 to 929.65 MHz) Rev. 0.2 15 AN800 3.2. ARIB STD-T108 3.2(2) Tolerance of Antenna Power The part-to-part variation of TX output power of the Si4455 chips is typically +0.5/–1.5 dB at maximum output power, at a given frequency and VDD supply voltage. The Si4455 chips therefore comply with the requirements of ARIB STD-T108 3.2(2) Tolerance of Antenna Power. When using Class-E type matching the TX output power of the Si4455 RFIC exhibits a dependence upon VDD supply voltage (due to use of a switching-type power amplifier), it is necessary to operate a fixed VDD supply voltage. In order to avoid this VDD dependence it is recommended to use Switched-Current matching where the output power has a flat characteristic over the VDD supply voltage variation, but in this case the current consumption is higher. 3.3. ARIB STD-T108 3.2(3) Radio Channel The Si4455 RFICs are capable of complying with all requirements of ARIB STD-T108 when operating with one unit radio channel (N=1), and is thus inherently capable of complying with wider radio channels (i.e., N=2 to 5). However, compliance is dependent upon selection of an appropriate modulation protocol (i.e, data rate and deviation). 3.4. ARIB STD-T108 3.2(4) Frequency Tolerance The frequency accuracy of the Si4455 RFICs is solely dependent upon the frequency accuracy of the crystal reference signal. Compliance with this requirement is thus largely determined by the frequency tolerance of the selected crystal blank or external reference oscillator. All measurements within this document were taken with the crystal oscillator adjusted for zero frequency error. 3.5. ARIB STD-T108 3.2(5) Modulation Method The modulation method is not specified in ARIB STD-T108. All measurements within this document were taken with 2GFSK, data rate = 100 kbps, and deviation = 50 kHz (unless noted otherwise). Compliance with certain requirements of the standard are heavily influenced by the selection of the modulation protocol; a greater margin of compliance may be obtained with a different selection of modulation protocol (e.g., lowering the data rate and/or deviation). Furthermore, it is not possible (even on a theoretical basis) to simultaneously comply with all requirements of ARIB STD-T108 with this selection of modulation protocol. For example, the Frequency Tolerance specification of STD-T108 3.2(4) requires operation with up to ±20 ppm frequency error (i.e., ±18.4 kHz at 920 MHz). It is not possible to comply with the Adjacent Channel Leakage Power requirements of ARIB STD-T108 3.2(7) while operating with ±18.4 kHz frequency offset from channel center frequency with selection of data rate = 100 kbps and deviation = 50 kHz. The modulation bandwidth of such a signal is sufficiently wide that any error in frequency will cause in an increase in integrated power in the adjacent channel bandwidth, resulting in failure to comply with the Adjacent Channel Leakage Power spec. 16 Rev. 0.2 AN800 3.6. ARIB STD-T108 3.2(6) Occupied Frequency Bandwidth The allowed occupied frequency bandwidth is specified in ARIB STD-T108 3.2(6) as less than (n x 100 kHz) within the frequency band from 928.15 MHz to 929.65 MHz, and less than (n x 200 kHz) in all other frequency bands. The integer number ‘N’ represents the number of unit radio channels used by the system, and may range in value from N=1 to N=5. The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown Figure 10. The selected modulation protocol was 2GFSK, DR = 100 kbps, Deviation = 50 kHz. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency band. Limit: 200 kHz (max, for N=1) 177.7 kHz Margin: 22.3 kHz (PASS) Measured: Figure 10. Occupied Bandwidth (DR=100 kbps Dev=50 kHz, 920.6 to 928.0 MHz) Rev. 0.2 17 AN800 The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in Figure 11 with DR = 96 kbps, Deviation = 48 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band. Limit: 200 kHz (max, for N=1) 170.0 kHz Margin: 30.0 kHz (PASS) Measured: Figure 11. Occupied Bandwidth (DR=96 kbps Dev=48 kHz, 920.6 to 928.0 MHz) 18 Rev. 0.2 AN800 The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in Figure 12 with DR = 80 kbps, Deviation = 40 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band. Limit: 200 kHz (max, for N=1) 141.0 kHz Margin: 59.0 kHz (PASS) Measured: Figure 12. Occupied Bandwidth (DR=80 kbps Dev=40 kHz, 920.6 to 928.0 MHz) Rev. 0.2 19 AN800 The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in Figure 13 with DR = 200 kbps, Deviation = 100 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band with lumping two units of radio channels (N=2). Limit: 400 kHz (max, for N=2) 341.8 kHz Margin: 58.2 kHz (PASS) Measured: Figure 13. Occupied Bandwidth (DR=200 kbps Dev=100 kHz, 920.6 to 928.0 MHz, N=2) 20 Rev. 0.2 AN800 The measured occupied frequency bandwidth within the frequency range of 928.15 MHz to 929.65 MHz is shown in Figure 14. The selected modulation protocol was 2GFSK, DR = 50 kbps, Deviation = 25 kHz. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency band. Limit: 100 kHz (max, for N=1) 87.25 kHz Margin: 12.75 kHz (PASS) Measured: Figure 14. Occupied Bandwidth (DR=50 kbps Dev=25 kHz, 928.15 to 929.65 MHz) Rev. 0.2 21 AN800 The measured occupied frequency bandwidth within the frequency range of 928.15 MHz to 929.65 MHz is shown in Figure 15. The selected modulation protocol was 2GFSK, DR = 100 kbps, Deviation = 50 kHz. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency band with lumping two units of radio channels (N=2). Limit: 200 kHz (max, for N=2) 177.2 kHz Margin: 22.8 kHz (PASS) Measured: Figure 15. Occupied Bandwidth (DR=100 kbps Dev=50 kHz, 928.15 to 929.65 MHz, N=2) 22 Rev. 0.2 AN800 3.7. ARIB STD-T108 3.2(7) Adjacent Channel Leakage Power The allowed adjacent channel leakage power is specified in ARIB STD-T108 3.2(7), and is a function of channel center frequency and output power level. 3.7.1. ACP, Antenna power=10 mW, Freq. Band=920.6 to 928.0 MHz Within the frequency band of 920.6 to 928.0 MHz when operating with antenna power of more than 1 mW and less than or equal to 20 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –15 dBm. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 16. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with practically no margins. Limit: –15 dBm (max) –15.33 dBm Margin: 0.33 dB (PASS) Measured: Figure 16. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 928.0 MHz, N=1) Rev. 0.2 23 AN800 Compliance with larger margins can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured adjacent channel leakage powers with different data rates are shown in Figure 17 and Figure 18. The selected modulation parameters were DR = 96 kbps and Deviation = 48 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 17. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –15 dBm (max) Measured: –17.01 dBm Margin: 2.01 dB (PASS) Figure 17. Adjacent Channel Leakage Power (DR=96 kbps Dev=48 kHz, 10 mW, 920.6 to 928.0 MHz, N=1) 24 Rev. 0.2 AN800 The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 18. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with large margins. Limit: –15 dBm (max) –24.26 dBm Margin: 9.26 dB (PASS) Measured: Figure 18. Adjacent Channel Leakage Power (DR=80 kbps Dev=40 kHz, 10 mW, 920.6 to 928.0 MHz, N=1) Rev. 0.2 25 AN800 The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 19, and is observed to comply with the spec with over 20 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –15 dBm (max) –38.86 dBm Margin: 23.86 dB (PASS) Measured: Figure 19. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 928.0 MHz, N=2) using N=2 unit radio channels the data rate can be increased up to 200 kbps. 26 Rev. 0.2 AN800 The selected modulation parameters were DR = 200 kbps and Deviation = 100 kHz. The measurement was taken assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in Figure 20. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with lumping two units of radio channels. Limit: –15 dBm (max) –18.01 dBm Margin: 3.01 dB (PASS) Measured: Figure 20. Adjacent Channel Leakage Power (DR=200 kbps Dev=100 kHz, 10 mW, 920.6 to 928.0 MHz, N=2) Rev. 0.2 27 AN800 3.7.2. Spectral Mask, Antenna power=10 mW, Freq. Band=922.4 to 928.0 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz bandwidth. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 21. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Of course with selecting lower data rates / frequency deviations compliance with larger margins can be obtained. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –57.01 dBm /3 kHz= –41.81 dBm/100 kHz Margin: 5.81 dB (PASS) Measured: Figure 21. Spectral Mask (DR=100 kbps Dev=50 kHz, 10mW, 922.4 to 928.0 MHz, N=1) 28 Rev. 0.2 AN800 A greater margin of compliance may be obtained when using two unit radio channels (N=2). The measured spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 22, and is observed to comply with the spec with over 8 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –59.95 dBm /3 kHz= –44.75 dBm/100 kHz Margin: 8.75 dB (PASS) Measured: Figure 22. Spectral Mask (DR=100 kbps Dev=50 kHz, 10 mW, 922.4 to 928.0 MHz, N=2) When using N=2 unit radio channels the data rate can be increased up to 200 kbps. Rev. 0.2 29 AN800 The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 23. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with lumping two units of radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –54.47 dBm /3 kHz= –39.27 dBm/100 kHz Margin: 3.27 dB (PASS) Measured: Figure 23. Spectral Mask (DR=200 kbps Dev=100 kHz, 10 mW, 922.4 to 928.0 MHz, N=2) 30 Rev. 0.2 AN800 3.7.3. Spectral Mask, Antenna Power=10 mW, Freq. Band=920.6 to 922.2 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 200 kHz + (n–1) x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/ 100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/ 3 kHz bandwidth. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 24. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with practically no margins. The limiting factor in performance is the selected modulation protocol which contains discrete tones that exceed the limits of the spectral mask. Margin: 0.87 dB (PASS) Figure 24. Spectral Mask (DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 922.2 MHz, N=1) Compliance with larger margins can be achieved by decreasing the data rate / frequency deviation of the modulation. Rev. 0.2 31 AN800 The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 25. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –54.13 dBm /3 kHz= –38.93 dBm/100 kHz Margin: 2.93 dB (PASS) Measured: Figure 25. Spectral Mask (DR=80 kbps Dev=40 kHz, 10 mW, 920.6 to 922.2 MHz, N=1) 32 Rev. 0.2 AN800 Compliance with greater margins may also be obtained when using two unit radio channels (N=2). The measured spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 26, and is observed to comply with the spec with over 13 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using n=3, 4, or 5 unit radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –56.73 dBm /3 kHz= –41.53 dBm/100 kHz Margin: 5.53 dB (PASS) Measured: Figure 26. Spectral Mask (DR=100 kbps Dev= 50kHz, 10 mW, 920.6 to 922.2 MHz, N=2) Rev. 0.2 33 AN800 When using N=2 unit radio channels the data rate can be increased up to 150 kbps. The measured spectral mask for the scenario of N=2 with DR=150 kbps Dev=75 kHz is shown in Figure 27, and is observed to comply with the spec. Limit: –36 dBm /100 kHz=–51.2 dBm /3 kHz (max) –54.29 dBm /3 kHz= –39.09 dBm/100 kHz Margin: 3.09 dB (PASS) Measured: Figure 27. Spectral Mask (DR=150 kbps Dev=75 kHz, 10 mW, 920.6 to 922.2 MHz, N=2) 34 Rev. 0.2 AN800 In order to keep the compliance in this band the data rate cannot be increased up to 200 kbps. The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 28, and is observed to fail against the spec. Margin: –18.88 dB (FAIL) Figure 28. Spectral Mask (DR=200 kbps Dev=100 kHz, 10 mW, 920.6 to 922.2 MHz, N=2) Rev. 0.2 35 AN800 3.7.4. ACP, Antenna power=20 mW, Freq. Band=920.6 to 928.0 MHz Within the frequency band of 920.6 to 928.0 MHz when operating with antenna power of more than 1 mW and less than or equal to 20 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –15 dBm. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 29. The Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –15 dBm (max) –12.90 dBm Margin: –2.10 dB (FAIL) Measured: Figure 29. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 928.0 MHz, N=1) 36 Rev. 0.2 AN800 Compliance can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured adjacent channel leakage power with different data rate is shown in Figure 30. The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 30. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –15 dBm (max) Measured: –22.03 dBm Margin: 7.03 dB (PASS) Figure 30. Adjacent Channel Leakage Power (DR=80 kbps Dev=40 kHz, 20 mW, 920.6 to 928.0 MHz, N=1) Rev. 0.2 37 AN800 The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 31, and is observed to comply with the spec with over 20 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –15 dBm (max) –36.04 dBm Margin: 21.04 dB (PASS) Measured: Figure 31. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 928.0 MHz, N=2) When using N=2 unit radio channels the data rate can be increased up to 180 kbps. 38 Rev. 0.2 AN800 The selected modulation parameters were DR = 180 kbps and Deviation = 90 kHz. The measurement was taken assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in Figure 32. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with lumping two units of radio channels. Limit: –15 dBm (max) –19.43 dBm Margin: 4.43 dB (PASS) Measured: Figure 32. Adjacent Channel Leakage Power (DR=180 kbps Dev=90 kHz, 20 mW, 920.6 to 928.0 MHz, N=2) Rev. 0.2 39 AN800 The selected modulation parameters were DR = 200 kbps and Deviation = 100 kHz. The measurement was taken assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in Figure 33. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power with no margins for the selected modulation protocol when using two units of radio channels. Limit: –15 dBm (max) –15.48 dBm Margin: 0.48 dB (PASS) Measured: Figure 33. Adjacent Channel Leakage Power (DR=200 kbps Dev=100 kHz, 20 mW, 920.6 to 928.0 MHz, N=2) 40 Rev. 0.2 AN800 3.7.5. Spectral Mask, Antenna power=20 mW, Freq. Band=922.4 to 928.0 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/ 100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/ 3 kHz bandwidth. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 34. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Of course with selecting lower data rates / frequency deviations a compliance with larger margins can be achieved. Margin: 2.85 dB (PASS) Figure 34. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 922.4 to 928.0 MHz Rev. 0.2 41 AN800 The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 35. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Limit: –36 dBm /100 kHz=–51.2 dBm /3 kHz (max) –54.50 Bm /3 kHz= –39.30 dBm/100 kHz Margin: 3.30 dB (PASS) Measured: Figure 35. Spectral Mask (DR=80 kbps Dev=40 kHz, 20 mW, 922.4 to 928.0 MHz, N=1) 42 Rev. 0.2 AN800 A greater margin of compliance may be obtained when using two unit radio channels (N=2). The measured spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 36, and is observed to comply with the spec with larger margins. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –57.90 dBm /3 kHz= –42.70 dBm/100 kHz Margin: 6.70 dB (PASS) Measured: Figure 36. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 922.4 to 928.0 MHz, N=2) When using N=2 unit radio channels the data rate can be increased up to 180 kbps. Rev. 0.2 43 AN800 The measured spectral mask for the scenario of N=2 with DR=180 kbps Dev=90 kHz is shown in Figure 37. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with lumping two units of radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –53.58 dBm /3 kHz= –38.38 dBm/100 kHz Margin: 2.38 dB (PASS) Measured: Figure 37. Spectral Mask (DR=180 kbps Dev=90 kHz, 20 mW, 922.4 to 928.0 MHz, N=2) 44 Rev. 0.2 AN800 The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 38. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with no margins. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –51.92 dBm /3 kHz= –36.72 dBm/100 kHz Margin: 0.72 dB (PASS) Measured: Figure 38. Spectral Mask (DR=200 kbps Dev=100 kHz, 20 mW, 922.4 to 928.0 MHz, N=2) Rev. 0.2 45 AN800 3.7.6. Spectral Mask, Antenna Power= 20 mW, Freq. Band=920.6 to 922.2 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 200 kHz + (n–1) x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/ 100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100kHz/3kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz bandwidth. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 39. The Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Margin: –1.72 dB (FAIL) Figure 39. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 922.2 MHz, N=1) 46 Rev. 0.2 AN800 Compliance can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured results with different data rates are shown in Figure 40 and Figure 41. The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 40. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with no margins. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) Measured: –51.80 dBm /3 kHz= –36.60 dBm/100 kHz Margin: 0.60 dB (PASS) Figure 40. Spectral Mask (DR=80 kbps Dev=40 kHz, 20 mW, 920.6 to 922.2 MHz, N=1) Rev. 0.2 47 AN800 The selected modulation parameters were DR = 70 kbps and Deviation = 35 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 41. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with acceptable margins. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –54.41 dBm /3 kHz= –39.21 dBm/100 kHz Margin: 3.21 dB (PASS) Measured: Figure 41. Spectral Mask (DR=70 kbps Dev=35 kHz, 20 mW, 920.6 to 922.2 MHz, N=1) 48 Rev. 0.2 AN800 Compliance may be obtained when using two unit radio channels (N=2). The measured spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 42, and is observed to comply with the spec with larger margins. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –54.47 dBm /3 kHz= –39.27 dBm/100 kHz Margin: 3.27 dB (PASS) Measured: Figure 42. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 922.2 MHz, N=2) When using N=2 unit radio channels the data rate can be slightly further increased. Rev. 0.2 49 AN800 The measured spectral mask for the scenario of N=2 with DR=120 kbps Dev=60 kHz is shown in Figure 43. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with lumping two units of radio channels. Margin: 3.33 dB (PASS) Figure 43. Spectral Mask (DR=120 kbps Dev=60 kHz, 20 mW, 920.6 to 922.2 MHz, N=2) 50 Rev. 0.2 AN800 The measured spectral mask for the scenario of N=2 with DR=150 kbps Dev=75 kHz is shown in Figure 44. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with no margins. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –51.90 dBm /3 kHz= –36.70 dBm/100 kHz Margin: 0.70 dB (PASS) Measured: Figure 44. Spectral Mask (DR=150 kbps Dev=75 kHz, 20 mW, 920.6 to 922.2 MHz, N=2) Rev. 0.2 51 AN800 The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 45. The Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol. Limit: –36 dBm /100 kHz= –51.2 dBm /3 kHz (max) –29.86 dBm /3 kHz= –14.66 dBm/100 kHz Margin: –21.34 dB (FAIL) Measured: Figure 45. Spectral Mask (DR=200 kbps Dev=100 kHz, 20 mW, 920.6 to 922.2 MHz, N=2) 52 Rev. 0.2 AN800 3.7.7. ACP, Antenna power= 1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz Within the frequency band of 916.0 to 916.8 MHz and 920.6 to 928.0 MHz when operating with antenna power of less than or equal to 1 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –26 dBm. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 46. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with no margins. Limit: –26 dBm (max) –26.01 dBm Margin: 0.01 dB (PASS) Measured: Figure 46. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=1) Rev. 0.2 53 AN800 Compliance with margins can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured adjacent channel leakage powers with different data rates are shown in Figure 47 and Figure 48. The selected modulation parameters were DR = 92 kbps and Deviation = 46 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 47. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –26 dBm (max) Measured: –29.31 dBm Margin: 3.31 dB (PASS) Figure 47. Adjacent Channel Leakage Power (DR=92 kbps Dev=46 kHz, 1 mW, 916.0 to 916.8 MHz, N=1) 54 Rev. 0.2 AN800 The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 48. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) with great margins for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –26 dBm (max) –35.17 dBm Margin: 9.17 dB (PASS) Measured: Figure 48. Adjacent Channel Leakage Power (DR=80 kbps Dev=40 kHz, 1 mW, 916.0 to 916.8 MHz, N=1) Rev. 0.2 55 AN800 The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 49, and is observed to comply with the spec with over 20 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –26 dBm (max) –49.60 dBm Margin: 23.60 dB (PASS) Measured: Figure 49. Adjacent Channel Leakage Power (DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=2) 56 Rev. 0.2 AN800 3.7.8. Spectral Mask, Antenna power= 1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz bandwidth. The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 50. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with large margins. Of course with selecting lower data rates / frequency deviations compliance with greater margins can be obtained. Margin: 16.07 dB (PASS) Figure 50. Spectral Mask (DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=1) Rev. 0.2 57 AN800 3.7.9. ACP, Antenna power= 1 mW, Freq. Band=928.15 to 929.65 MHz Within the frequency band of 928.15 to 929.65 MHz when operating with an antenna power of less than or equal to 1 mW, the integrated adjacent channel leakage power within the 100 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –26 dBm. The selected modulation parameters were DR = 50 kbps and Deviation = 25 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 51. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol with no margins. Limit: –26 dBm (max) –26.34 dBm Margin: 0.34 dB (PASS) Measured: Figure 51. Adjacent Channel Leakage Power (DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=1) 58 Rev. 0.2 AN800 Compliance with greater margins can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured adjacent channel leakage power with lower data rate is shown in Figure 52. The selected modulation parameters were DR = 40 kbps and Deviation = 20 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in Figure 52. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel Leakage Power for the selected modulation protocol. Limit: –26 dBm (max) Measured: –35.53 dBm Margin: 9.53 dB (PASS) Figure 52. Adjacent Channel Leakage Power (DR=40 kbps Dev=20 kHz, 1 mW, 928.15 to 929.65 MHz, N=1) Rev. 0.2 59 AN800 The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=50 kbps Dev=25 kHz is shown in Figure 53, and is observed to comply with the spec with over 20 dB of margin. This test also inherently verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels. Limit: –26 dBm (max) –51.07 dBm Margin: 25.07 dB (PASS) Measured: Figure 53. Adjacent Channel Leakage Power (DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=2) 60 Rev. 0.2 AN800 3.7.10. Spectral Mask, Antenna power= 1 mW, Freq. Band=928.15 to 929.65 MHz Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of |f – fc| > 100 kHz + n x 50 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz bandwidth. The selected modulation parameters were DR = 50 kbps and Deviation = 25 kHz. The measurement was taken assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 54. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected modulation protocol with large margins. Of course with selecting lower data rates / frequency deviations compliance with greater margins can be obtained. Margin: 13.97 dB (PASS) Figure 54. Spectral Mask (DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=1) Rev. 0.2 61 AN800 3.8. ARIB STD-T108 3.2(8) Spurious Emissions The allowed level of spurious emissions is specified in ARIB STD-T108 3.2(8) and shall not exceed the limits shown in Table 2. The Si4455-B1 device was configured for an output power level of +10 dBm and +13 dBm on a channel center frequency of 925.8 MHz for all tests within this section. Since the +10 dBm and 0 dBm schematics are identical, the compliance is only demonstrated at +10 dBm (beside the +13 dBm case what uses different matching network). The selected modulation protocol was 2GFSK with DR = 100 kbps and Deviation = 50 kHz. 3.8.1. F ≤ 710 MHz, Antenna Power= 10 mW The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 55. The Si4455 chip easily complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –67.08 dBm Margin: 31.08 dB (PASS) Figure 55. Spurious Emissions (10 mW, F710 MHz) 62 Rev. 0.2 AN800 3.8.2. 710 MHz < F ≤ 900 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than –55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 56. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /1 MHz (max) Measured: –62.62 dBm Margin: 7.62 dB (PASS) Figure 56. Spurious Emissions (10 mW, 710-900 MHz) Rev. 0.2 63 AN800 3.8.3. 900 MHz < F ≤ 915 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 57. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –74.52 dBm Margin: 19.52 dB (PASS) Figure 57. Spurious Emissions (10 mW, 900-915 MHz) 64 Rev. 0.2 AN800 3.8.4. 915 MHz < F ≤ 920.3 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 915–920.3 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 58. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –68.17 dBm Margin: 32.17 dB (PASS) Figure 58. Spurious Emissions (10 mW, 915-920.3 MHz) Rev. 0.2 65 AN800 3.8.5. 920.3 MHz < F ≤ 924.3 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 920.3–924.3 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 59. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –56.19 dBm Margin: 20.19 dB (PASS) Figure 59. Spurious Emissions (10 mW, 920.3-924.3 MHz) 66 Rev. 0.2 AN800 3.8.6. 924.3 MHz < F ≤ 930.0 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 924.3–930.0 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. This limit applies at all frequencies within this sub-band except at frequency offsets from the channel center frequency of |f – fc| ≤ 200 kHz + n x 100 kHz. The measured spurious emissions within this frequency band are shown in Figure 60 and Figure 61, lower and upper range, respectively. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –41.60 dBm Margin: 5.60 dB (PASS) Figure 60. Spurious Emissions (10 mW, 924.3-930.0 MHz, lower range) Rev. 0.2 67 AN800 Limit: –36 dBm /100 kHz (max) Measured: –41.90 dBm Margin: 5.90 dB (PASS) Figure 61. Spurious Emissions (10 mW, 924.3-930.0 MHz, upper range) 68 Rev. 0.2 AN800 3.8.7. 930.0 MHz < F ≤ 1 GHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 930.0–1000 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 62. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –63.08 dBm Margin: 8.08 dB (PASS) Figure 62. Spurious Emissions (10 mW, 930.0-1000 MHz) Rev. 0.2 69 AN800 3.8.8. 1000 MHz < F ≤ 1215 MHz, Antenna Power= 10 mW The allowed level of spurious emissions within the 1–1.215 GHz frequency band is specified as less than –48 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 63. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –48 dBm /1 MHz (max) Measured: –66.04 dBm Margin: 18.04 dB (PASS) Figure 63. Spurious Emissions (10 W, 1–1.215 GHz) 70 Rev. 0.2 AN800 3.8.9. F > 1215 MHz, Antenna Power= 10 mW The allowed level of spurious emissions at frequencies above 1.215 GHz is specified as less than –30 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 64. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –30 dBm /1 MHz (max) Measured: –39.44 dBm Margin: 9.44 dB (PASS) Figure 64. Spurious Emissions (10 mW, above 1.215 GHz) Rev. 0.2 71 AN800 3.8.10. F ≤ 710 MHz, Antenna Power=20 mW The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 65. The Si4455 chip easily complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –73.77 dBm Margin: 37.77 dB (PASS) Figure 65. Spurious Emissions (20 mW, F710 MHz) 72 Rev. 0.2 AN800 3.8.11. 710 MHz < F ≤ 900 MHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than –55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 66. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /1 MHz (max) Measured: –61.80 dBm Margin: 6.80 dB (PASS) Figure 66. Spurious Emissions (20 mW, 710-900 MHz) Rev. 0.2 73 AN800 3.8.12. 900 MHz < F ≤ 915 MHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 67. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –72.92 dBm Margin: 17.92 dB (PASS) Figure 67. Spurious Emissions (20 mW, 900–915 MHz) 74 Rev. 0.2 AN800 3.8.13. 915 MHz < F ≤ 920.3 MHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 915–920.3 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 68. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –66.00 dBm Margin: 30.00 dB (PASS) Figure 68. Spurious Emissions (20 mW, 915–920.3 MHz) Rev. 0.2 75 AN800 3.8.14. 920.3 MHz < F ≤ 924.3 MHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 920.3–924.3 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 69. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –53.69 dBm Margin: 17.69 dB (PASS) Figure 69. Spurious Emissions (20 mW, 920.3–924.3 MHz) 76 Rev. 0.2 AN800 3.8.15. 924.3 MHz < F ≤ 930.0 MHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 924.3–930.0 MHz frequency band is specified as less than –36 dBm in any 100 kHz bandwidth. This limit applies at all frequencies within this sub-band except at frequency offsets from the channel center frequency of |f – fc| ≤ 200 kHz + n x 100 kHz. The measured spurious emissions within this frequency band are shown in Figure 70 and Figure 71, lower and upper range, respectively. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –36 dBm /100 kHz (max) Measured: –39.24 dBm Margin: 3.24 dB (PASS) Figure 70. Spurious Emissions (20 mW, 924.3–930.0 MHz, lower range) Rev. 0.2 77 AN800 Limit: –36 dBm /100 kHz (max) Measured: –39.37 dBm Margin: 3.37 dB (PASS) Figure 71. Spurious Emissions (20 mW, 924.3–930.0 MHz, upper range) 78 Rev. 0.2 AN800 3.8.16. 930.0 MHz < F ≤ 1 GHz, Antenna Power= 20 mW The allowed level of spurious emissions within the 930.0–1000 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 72. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –60.73 dBm Margin: 5.73 dB (PASS) Figure 72. Spurious Emissions (20 mW, 930.0–1000 MHz) Rev. 0.2 79 AN800 3.8.17. 1000 MHz < F ≤ 1215 MHz, Antenna Power= 20mW The allowed level of spurious emissions within the 1–1.215 GHz frequency band is specified as less than –48 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 73. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –48 dBm /1 MHz (max) Measured: –64.13 dBm Margin: 16.13 dB (PASS) Figure 73. Spurious Emissions (20 mW, 1–1.215 GHz) 80 Rev. 0.2 AN800 3.8.18. F > 1215 MHz, Antenna Power= 20 mW The allowed level of spurious emissions at frequencies above 1.215 GHz is specified as less than –30 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 74. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –30 dBm /1 MHz (max) Measured: –39.69 dBm Margin: 9.69 dB (PASS) Figure 74. Spurious Emissions (20 mW, above 1.215 GHz) Rev. 0.2 81 AN800 4. RX Measurement Results 4.1. ARIB STD-T108 3.3 Receiver Conducted Spurious Emissions The allowed level of conducted spurious emissions at the receiver input is specified in ARIB STD-T108 3.3 and shall not exceed the limits shown in Table 3. The Si4455-B1 device was configured for a channel center frequency of 925.8 MHz for all tests within this section. Since the +10 dBm and +13 dBm schematics are different the compliance must be demonstrated in both cases. 4.1.1. F ≤ 710 MHz, using the +10 dBm schematic The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 75. The Si4455 chip easily complies with the specified level of spurious emissions within this sub-band. Limit: –54 dBm /100 kHz (max) Measured: –85.21 dBm Margin: 31.21 dB (PASS) Figure 75. RX Conducted Spurious Emissions (F710 MHz) 82 Rev. 0.2 AN800 4.1.2. 710 MHz < F ≤ 900 MHz, using the +10 dBm schematic The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than –55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 76. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /1 MHz (max) Measured: –80.38 dBm Margin: 25.38 dB (PASS) Figure 76. RX Conducted Spurious Emissions (710–900 MHz) Rev. 0.2 83 AN800 4.1.3. 900 MHz < F ≤ 915 MHz, using the +10 dBm schematic The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 77. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –93.17 dBm Margin: 38.17 dB (PASS) Figure 77. RX Conducted Spurious Emissions (900–915 MHz) 84 Rev. 0.2 AN800 4.1.4. 915 MHz < F ≤ 930 MHz, using the +10 dBm Schematic The allowed level of spurious emissions within the 915–930 MHz frequency band is specified as less than –54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 78. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –54 dBm /100 kHz (max) Measured: –93.15 dBm Margin: 39.15 dB (PASS) Figure 78. RX Conducted Spurious Emissions (915–930 MHz) Rev. 0.2 85 AN800 4.1.5. 930 MHz < F ≤ 1000 MHz, using the +10 dBm schematic The allowed level of spurious emissions within the 930–1000 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 79. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –91.13 dBm Margin: 36.13 dB (PASS) Figure 79. RX Conducted Spurious Emissions (930–1000 MHz) 86 Rev. 0.2 AN800 4.1.6. F > 1 GHz, using the +10 dBm schematic The allowed level of spurious emissions at frequencies above 1000 MHz is specified as less than –47 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 80. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –47 dBm /1 MHz (max) Measured: –72.71 dBm Margin: 25.71 dB (PASS) Figure 80. RX Conducted Spurious Emissions (above 1 GHz) Rev. 0.2 87 AN800 4.1.7. F ≤ 710 MHz, using the +13 dBm schematic The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 81. The Si4455 chip easily complies with the specified level of spurious emissions within this sub-band. Limit: –54 dBm /100 kHz (max) Measured: –88.30 dBm Margin: 34.30 dB (PASS) Figure 81. RX Conducted Spurious Emissions (F710 MHz) 88 Rev. 0.2 AN800 4.1.8. 710 MHz < F ≤ 900 MHz, using the +13 dBm schematic The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than –55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 82. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /1 MHz (max) Measured: –80.24 dBm Margin: 25.24 dB (PASS) Figure 82. RX Conducted Spurious Emissions (710–900 MHz) Rev. 0.2 89 AN800 4.1.9. 900 MHz < F ≤ 915 MHz, using the +13 dBm schematic The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 83. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –92.83 dBm Margin: 37.83 dB (PASS) Figure 83. RX Conducted Spurious Emissions (900–915 MHz) 90 Rev. 0.2 AN800 4.1.10. 915 MHz < F ≤ 930 MHz, using the +13 Bm schematic The allowed level of spurious emissions within the 915–930 MHz frequency band is specified as less than –54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 84. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –54 dBm /100 kHz (max) Measured: –92.88 Bm Margin: 38.88 dB (PASS) Figure 84. RX Conducted Spurious Emissions (915–930 MHz) Rev. 0.2 91 AN800 4.1.11. 930 MHz < F ≤ 1000 MHz, using the +13 dBm schematic The allowed level of spurious emissions within the 930–1000 MHz frequency band is specified as less than –55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 85. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. Limit: –55 dBm /100 kHz (max) Measured: –90.85 dBm Margin: 35.85 dB (PASS) Figure 85. RX Conducted Spurious Emissions (930–1000 MHz) 92 Rev. 0.2 AN800 4.1.12. F > 1 GHz, using the +13 dBm schematic The allowed level of spurious emissions at frequencies above 1000 MHz is specified as less than –47 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 86. The Si4455 chip complies with the specified level of spurious emissions within this sub-band. The appearance of the spur observed at around 3.7 GHz is due the coupling of the VCO signal to bond wires of the LNA input (i.e., RXp and RXn). Here, this spur appears because of the weaker filtering in the direct-tie path compared with +10 dBm case. Limit: –47 dBm /1 MHz (max) Measured: –69.68 dBm Margin: 22.68 dB (PASS) Figure 86. RX Conducted Spurious Emissions (above 1 GHz) Rev. 0.2 93 AN800 5. Reference Design Schematics 5.1. Antenna Power Optimized for +10 mW or Below 94 Rev. 0.2 AN800 5.2. Antenna Power Optimized for +20 mW Rev. 0.2 95 AN800 DOCUMENT CHANGE LIST Revision 0.1 to Revision 0.2 B0, B1, C0, C1, C2 were added in a bracket to page 1. On page 1, 4455CPCE10D915M and 4455CPCE13D915M were added. Si4455-B1 was changed to Si4455 on several pages. 96 Rev. 0.2 AN800 CONTACT INFORMATION Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel: 1+(512) 416-8500 Fax: 1+(512) 416-9669 Toll Free: 1+(877) 444-3032 Please visit the Silicon Labs Technical Support web page: https://www.silabs.com/support/pages/contacttechnicalsupport.aspx and register to submit a technical support request. Patent Notice Silicon Labs invests in research and development to help our customers differentiate in the market with innovative low-power, small size, analogintensive mixed-signal solutions. Silicon Labs' extensive patent portfolio is a testament to our unique approach and world-class engineering team. The information in this document is believed to be accurate in all respects at the time of publication but is subject to change without notice. Silicon Laboratories assumes no responsibility for errors and omissions, and disclaims responsibility for any consequences resulting from the use of information included herein. Additionally, Silicon Laboratories assumes no responsibility for the functioning of undescribed features or parameters. Silicon Laboratories reserves the right to make changes without further notice. Silicon Laboratories makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Silicon Laboratories assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Silicon Laboratories products are not designed, intended, or authorized for use in applications intended to support or sustain life, or for any other application in which the failure of the Silicon Laboratories product could create a situation where personal injury or death may occur. Should Buyer purchase or use Silicon Laboratories products for any such unintended or unauthorized application, Buyer shall indemnify and hold Silicon Laboratories harmless against all claims and damages. Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders. Rev. 0.2 97