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Si4455 AND ARIB STD-T108 C OMPLIANCE AT 920 M H Z
1. Introduction
This document demonstrates the compliance of the Si4455 (B0, B1, C0, C1, C2) RFIC with the regulatory
requirements of ARIB STD-T108 in the 920 MHz band. The measurements within this document were taken with
an Si4455-B1 RFIC mounted on a 4455-PCE10D915M / 4455CPCE10D915M / 4455-PCE13D915M /
4455CPCE13D915M Direct-tie RF Pico Board (see the Reference Design Schematics in Section 5). The
compliance investigations were taken with a fundamental output power of +13, +10 and 0 dBm.
1.1. Summary of Measured Results
A summary of measured results is provided in Table 1. An overview of the measured results may be stated as
follows:
For
+13 dBm fundamental output power:
Selection
of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC not compliant
with the ARIB STD-T108 standard, when using one unit radio channel (N=1)
Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant in the
922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using one unit
radio channel (N=1)
Selection of a modulation protocol with DR=200 kbps and Deviation=100 kHz makes the Si4455 RFIC compliant in
the 922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with practically no margins when using two
unit radio channels (N=2)
Selection of a modulation protocol with DR=180 kbps and Deviation=90 kHz makes the Si4455 RFIC compliant in the
922.4 to 928.0 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using two unit
radio channels (N=2)
Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant in the
920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with no margins when using one unit radio
channel (N=1)
Selection of a modulation protocol with DR=70 kbps and Deviation=35 kHz makes the Si4455 RFIC compliant in the
920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using one unit
radio channel (N=1)
Selection of a modulation protocol with DR=200 kbps and Deviation=100 kHz makes the Si4455 RFIC not compliant
in the 920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard when using two unit radio channels
(N=2)
Selection of a modulation protocol with DR=150 kbps and Deviation=75 kHz makes the Si4455 RFIC compliant in the
920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with practically no margins when using two
unit radio channels (N=2)
Selection of a modulation protocol with DR=120 kbps and Deviation=60 kHz makes the Si4455 RFIC compliant in the
920.6 to 922.2 MHz frequency band with the ARIB STD-T108 standard with acceptable margins when using two unit
radio channels (N=2)
For
+10 dBm fundamental output power:
Selection
of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC compliant with
the ARIB STD-T108 standard, but with practically no margins when using one unit radio channel (N=1)
Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant with the
ARIB STD-T108 standard with acceptable margins when using one unit radio channel (N=1)
Lumping two units of radio channels (N=2) in the 920.6 to 922.2 MHz frequency band compliance can be achieved
with acceptable margins with selecting the data rate up to 150 kbps with 75 kHz deviation
Lumping two units of radio channels (N=2) in the 922.4 to 928.0 MHz frequency band compliance can be achieved
with acceptable margins with selecting the data rate up to 200 kbps with 100 kHz deviation
For
0 dBm fundamental output power:
Selection
Rev. 0.2
of a modulation protocol with DR=100 kbps and Deviation=50 kHz makes the Si4455 RFIC compliant with
Copyright © 2014 by Silicon Laboratories
AN800
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the ARIB STD-T108 standard in the 916.0 to 916.8 Hz and 920.6 to 928.0 MHz bands, but with practically no margins
when using one unit radio channel (N=1)
Selection of a modulation protocol with DR=80 kbps and Deviation=40 kHz makes the Si4455 RFIC compliant with the
ARIB STD-T108 standard in the 916.0 to 916.8 MHz and 920.6 to 928.0 MHz bands with great margins when using
one unit radio channel (N=1)
Selection of a modulation protocol with DR=50 kbps and Deviation=25 kHz makes the Si4455 RFIC compliant with the
ARIB STD-T108 standard in the 928.15 to 929.65 MHz band, but with practically no margins when using one unit
radio channel (N=1)
Selection of a modulation protocol with DR=40 kbps and Deviation=20 kHz makes the Si4455 RFIC compliant with the
ARIB STD-T108 standard in the 928.15 to 929.65 MHz band with great margins when using one unit radio channel
(N=1)
Table 1. Summary of Measured Results
Spec
Par
Parameter
Condition
Limit
Measured
Margin
3.2(1)
TX Antenna Power
920.6 to 923.4 MHz
+24 dBm
13.00 dBm
11.00 dB
920.6 to 923.4 MHz
+24 dBm
10.31 dBm
13.69 dB
923.6 to 928.0 MHz
+13 dBm
13.00 dBm
0.00 dB
923.6 to 928.0 MHz
+13 dBm
10.31 dBm
2.69 dB
916.0 to 916.8 MHz
928.15 to 929.65 MHz
0 dBm
–0.02 dBm
0.02 dB
+0.5/–1.5 dB
Comply
3.2(2)
Tolerance of Antenna
Power
+20%/–80%
3.2(3)
Radio Channel
N=1 to 5
3.2(4)
Frequency Tolerance
±20 ppm
N/A
N/A
3.2(5)
Modulation Method
N/A
N/A
N/A
3.2(6)
Occupied Frequency
Bandwidth
916.0 to 916.8 MHz
920.6 to 928.0 MHz
DR=100 kbps, N=1
200 kHz
177.7 kHz
22.3 kHz
916.0 to 916.8 MHz
920.6 to 928.0 MHz
DR=80 kbps, N=1
200 kHz
141.0 kHz
59.0 kHz
916.0 to 916.8 MHz
920.6 to 928.0 MHz
DR=200 kbps, N=2
400 kHz
341.8 kHz
58.2 kHz
928.15 to 929.65 MHz
DR=50 kbps, N=1
100 kHz
87.25 kHz
12.75 kHz
928.15 to 929.65 MHz
DR=100 kbps, N=2
200 kHz
177.2 kHz
22.8 kHz
Comply
Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the
standard limit. Red text indicates that the given parameter fails the standard limit.”
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Rev. 0.2
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Table 1. Summary of Measured Results (Continued)
Spec
Par
3.2(7)
Parameter
Condition
Limit
Measured
Margin
Adjacent Channel
Leakage Power
920.6 to 928.0 MHz
10 dBm, DR=100 kbps, N=1
–15 dBm
–15.33 dBm
0.33 dB
920.6 to 928.0 MHz
10 dBm, DR=80 kbps, N=1
–15 dBm
–24.26 dBm
9.26 dB
920.6 to 928.0 MHz
10 dBm, DR=100 kbps, N=2
–15 dBm
–38.86 dBm
23.86 dB
920.6 to 928.0 MHz
10 dBm, DR=200 kbps, N=2
–15 dBm
–18.01 dBm
3.01 dB
916.0 to 916.8 MHz
0 dBm, DR=100 kbps, N=1
–26 dBm
–26.01 dBm
0.01 dB
916.0 to 916.8 MHz
0 dBm, DR=100 kbps, N=2
–26 dBm
–49.6 dBm
23.6 dB
916.0 to 916.8 MHz
0 dBm, DR=80 kbps, N=1
–26 dBm
–35.17 dBm
9.17 dB
928.15 to 929.65 MHz
0 dBm, DR=50 kbps, N=1
–26 Bm
–26.34 dBm
0.34 dB
928.15 to 929.65 MHz
0 dBm, DR=50 kbps, N=2
–26 dBm
–51.07 dBm
25.07 dB
928.15 to 929.65 MHz
0 dBm, DR=40 kbps, N=1
–26 dBm
–35.53 dBm
9.53 dB
920.6 to 928.0 MHz
13 dBm, DR=100 kbps, N=1
–15 dBm
–12.9 dBm
-2.1 dB
920.6 to 928.0 MHz
13 dBm, DR=80 kbps, N=1
–15 dBm
–22.03 dBm
7.03 dB
920.6 to 928.0 MHz
13 dBm, DR=100 kbps, N=2
–15 dBm
–36.04 dBm
21.04 dB
920.6 to 928.0 MHz
13 dBm, DR=200 kbps, N=2
–15 dBm
–15.48 dBm
0.48 dB
920.6 to 928.0 MHz
13 dBm, DR=180 kbps, N=2
–15 dBm
–19.43 dBm
4.43 dB
Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the
standard limit. Red text indicates that the given parameter fails the standard limit.”
Rev. 0.2
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Table 1. Summary of Measured Results (Continued)
Spec
Par
Parameter
Condition
Limit
Measured
Margin
3.2(7)
Spectral Mask
922.4 to 928.0 MHz
10 dBm, DR=100 kbps, N=1
–36 dBm/100 kHz
–41.81 dBm
5.81 dB
922.4 to 928.0 MHz
10 dBm, DR=100 kbps, N=2
–36 dBm/100 kHz
–44.75 dBm
8.75 dB
922.4 to 928.0 MHz
10 dBm, DR=200 kbps, N=2
–36 dBm/100 kHz
–39.27 dBm
3.27 dB
920.6 to 922.2 MHz
10 dBm, DR=100 kbps, N=1
–36 dBm/100 kHz
920.6 to 922.2 MHz
10 dBm, DR=80 kbps, N=1
–36 dBm/100 kHz
–38.93 dBm
2.93 dB
920.6 to 922.2 MHz
10 dBm, DR=100 kbps, N=2
–36 dBm/100 kHz
–41.53 dBm
5.53 dB
920.6 to 922.2 MHz
10 dBm, DR=150 kbps, N=2
–36 dBm/100 kHz
–39.09 dBm
3.09 dB
920.6 to 922.2 MHz
10 dBm, DR=200 kbps, N=2
–36 dBm/100 kHz
916.0 to 916.8 MHz
0 dBm, DR=100 kbps, N=1
–36 dBm/100 kHz
–52.07 dBm
16.07 dB
928.15 to 929.65 MHz
0 dBm, DR=50 kbps, N=1
–36 dBm/100 kHz
–49.97 dBm
13.97 dB
922.4 to 928.0 MHz
13 dBm, DR=100 kbps, N=1
–36 dBm/100 kHz
922.4 to 928.0 MHz
13 dBm, DR=80 kbps, N=1
–36 dBm/100 kHz
–39.30 dBm
3.30 dB
922.4 to 928.0 MHz
13 dBm, DR=100 kbps, N=2
–36 dBm/100 kHz
–42.70 dBm
6.70 dB
922.4 to 928.0 MHz
13 dBm, DR=200 kbps, N=2
–36 dBm/100 kHz
–36.72 dBm
0.72 dB
922.4 to 928.0 MHz
13 dBm, DR=180 kbps, N=2
–36 dBm/100 kHz
–38.38 dBm
2.38 dB
920.6 to 922.2 MHz
13 dBm, DR=100 kbps, N=1
–36 dBm/100 kHz
920.6 to 922.2 MHz
13 dBm, DR=80 kbps, N=1
–36 dBm/100 kHz
–36.60 dBm
0.60 dB
920.6 to 922.2 MHz
13 dBm, DR=70 kbps, N=1
–36 dBm/100 kHz
–39.21 dBm
3.21 dB
3.2(7)
Spectral Mask
0.87 dB
–18.88 dB
2.85 dB
–1.72 dB
Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the
standard limit. Red text indicates that the given parameter fails the standard limit.”
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Rev. 0.2
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Table 1. Summary of Measured Results (Continued)
Spec
Par
3.2(8)
3.2(8)
3.2(8)
Parameter
Spurious Emissions
TX, 10 mW
Spurious Emissions
TX, 20 mW
Spurious Emissions
TX, 20 mW
Condition
Limit
Measured
Margin
920.6 to 922.2 MHz
13 dBm, DR=100 kbps, N=2
–36 dBm/100 kHz
–39.27 dBm
3.27 dB
920.6 to 922.2 MHz
13 dBm, DR=200 kbps, N=2
–36 dBm/100 kHz
–14.66 dBm
–21.34 dB
920.6 to 922.2 MHz
13 dBm, DR=150 kbps, N=2
–36 dBm/100 kHz
–36.70 dBm
0.70 dB
920.6 to 922.2 MHz
13 dBm, DR=120 kbps, N=2
–36 dBm/100 kHz
F ≤ 710 MHz
–36 dBm/100 kHz
–67.08 dBm
31.08 dB
710 MHz < F ≤ 900 MHz
–55 dBm/1 MHz
–62.62 dBm
7.62 dB
900 MHz < F ≤ 915 MHz
–55 dBm/100 kHz
–74.52 dBm
19.52 dB
915 MHz < F ≤ 920.3 MHz
–36 dBm/100 kHz
–68.17 dBm
32.17 dB
920.3 MHz < F ≤ 924.3 MHz
–36 dBm/100 kHz
–56.19 dBm
20.19 dB
924.3 MHz < F ≤ 930 MHz
–36 dBm/100 kHz
–41.6 dBm
5.6 dB
930 MHz < F ≤ 1 GHz
–55 dBm/100 kHz
–63.08 dBm
8.08 dB
1 GHz < F ≤ 1.215 GHz
–48 dBm/1 MHz
–66.04 dBm
18.04 dB
F > 1.215 GHz
–30 dBm/1 MHz
–39.44 dBm
9.44 dB
F ≤ 710 MHz
–36 dBm/100 kHz
–73.77 dBm
37.77 dB
710 MHz < F ≤ 900 MHz
–55 dBm/1 MHz
–61.80 dBm
6.80 dB
900 MHz < F ≤ 915 MHz
–55 dBm/100 kHz
–72.92 dBm
17.92 dB
915 MHz < F ≤ 920.3 MHz
–36 dBm/100 kHz
–66.00 dBm
30.00 dB
920.3 MHz < F ≤ 924.3 MHz
–36 dBm/100 kHz
–53.69 dBm
17.69 dB
924.3 MHz < F ≤ 930 MHz
–36 dBm/100 kHz
–39.24 dBm
3.24 dB
930 MHz < F ≤ 1 GHz
–55 dBm/100 kHz
–60.73 dBm
5.73 dB
1 GHz < F ≤ 1.215 GHz
–48 dBm/1 MHz
–64.13 dBm
16.13 dB
F > 1.215 GHz
–30 dBm/1 MHz
–39.69 dBm
9.69 dB
3.33 dB
Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the
standard limit. Red text indicates that the given parameter fails the standard limit.”
Rev. 0.2
5
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Table 1. Summary of Measured Results (Continued)
Spec
Par
3.3
3.3
Parameter
Condition
Limit
Measured
Margin
RX Conducted
Spurious Emissions
10 mW schematic
F ≤ 710 MHz
–54 dBm/100 kHz
–85.21 dBm
31.21 dB
710 MHz < F ≤ 900 MHz
–55 dBm/1 MHz
–80.38 dBm
25.38 dB
900 MHz < F ≤ 915 MHz
–55 dBm/100 kHz
–93.17 dBm
38.17 dB
915 MHz < F ≤ 930 MHz
–54 dBm/100 kHz
–93.15 dBm
39.15 dB
930 MHz < F ≤ 1 GHz
–55 dBm/100 kHz
–91.13 dBm
36.13 dB
F > 1 GHz
–47 dBm/1 MHz
–72.71 dBm
25.71 dB
F ≤ 710 MHz
–54 dBm/100 kHz
–88.30 dBm
34.30 dB
710 MHz < F ≤ 900 MHz
–55 dBm/1 MHz
–80.24 dBm
25.24 dB
900 MHz < F ≤ 915 MHz
–55 dBm/100 kHz
–92.83 dBm
37.83 dB
915 MHz < F ≤ 930 MHz
–54 dBm/100 kHz
–92.88 dBm
38.88 dB
930 MHz < F ≤ 1 GHz
–55 dBm/100 kHz
–90.85 dBm
35.85 dB
F > 1 GHz
–47 dBm/1 MHz
–69.68 dBm
22.68 dB
RX Conducted
Spurious Emissions
20 mW schematic
Note: “Purple text indicates that if the margin on the given parameter is low (less than 3 dB), compare to the
standard limit. Red text indicates that the given parameter fails the standard limit.”
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Rev. 0.2
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2. Summary ARIB STD-T108 Requirements in the 920 MHz Band
The main requirements of ARIB STD-T108 in the 920 MHz band are summarized in this section.
2.1. ARIB STD-T108 3.2(1) Antenna Power
The antenna power shall be less than or equal to 250 mW (+24 dBm). However, the antenna power shall be less
than or equal to 1 mW (0 dBm) for radio channels consisting of only unit radio channel with center frequencies
ranging from 916.0 MHz to 916.8 MHz and from 928.15 MHz to 929.65 MHz, and shall be less than or equal to
20 mW (+13 dBm) with center frequencies ranging from 923.6 MHz to 928.0 MHz.
2.2. ARIB STD-T108 3.2(2) Tolerance of Antenna Power
The tolerance of the antenna power shall be within +20% to –80%.
2.3. ARIB STD-T108 3.2(3) Radio Channel
A radio channel shall consist of up to five consecutive unit radio channels. Unit radio channels are channels with
bandwidths of 200 kHz with center frequencies of 916.0 MHz + 200 kHz x n (with n = positive integer greater than
or equal to zero) for center frequencies between 916.0 MHz to 916.8 MHz, or center frequencies of 920.6 MHz +
200 kHz x n for center frequencies between 920.6 MHz to 928.0 MHz. Within the frequency range of 928.15 MHz
to 929.65 MHz, the channel bandwidth is 100 kHz and the center frequency shall be set at 928.15 MHz + 100 kHz
x n.
2.4. ARIB STD-T108 3.2(4) Frequency Tolerance
The frequency tolerance shall be within ±20 ppm.
2.5. ARIB STD-T108 3.2(5) Modulation Method
The modulation method is not specified. All measurements performed in this document were taken with 2GFSK
modulation.
2.6. ARIB STD-T108 3.2(6) Occupied Frequency Bandwidth
The occupied frequency bandwidth shall be less than or equal to 200 kHz x n (with n = the number of unit radio
channels constituting the radio channel and is an integer from 1 to 5). However, the occupied frequency bandwidth
shall be less than 100 kHz x n when the center frequencies are within the range of 928.15 MHz to 929.65 MHz.
2.7. ARIB STD-T108 3.2(7) Adjacent Channel Leakage Power
The standard provides for a variety of adjacent channel leakage power spectral masks as a function of channel
center frequency and output power level.
Rev. 0.2
7
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2.7.1. Antenna Power=1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz
Within the frequency bands of 916.0 to 916.8 MHz and 920.6 to 928.0 MHz, the channel spectral mask shall be as
shown in Figure 1 when operating with antenna power of less than or equal to 1 mW. The adjacent channel
leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than
or equal to –26 dBm.
Figure 1. Channel Spectral Mask (1 mW, 916.0 to 916.8 MHz and 920.6 to 928.0 MHz)
2.7.2. Antenna Power=20 mW, Freq. Band=922.4 to 928.0 MHz
Within the frequency band of 922.4 to 928.0 MHz, the channel spectral mask shall be as shown in Figure 2 when
operating with antenna power of more than 1 mW and less than or equal to 20 mW. The adjacent channel leakage
power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal
to –15 dBm.
Figure 2. Channel Spectral Mask (20 mW, 922.4 to 928.0 MHz)
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Rev. 0.2
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2.7.3. Antenna Power=250 mW, Freq. Band=922.4 to 923.4 MHz
Within the frequency band of 922.4 to 923.4 MHz, the channel spectral mask shall be shown as in Figure 3 when
operating with antenna power of more than 20 mW and less than or equal to 250 mW. The adjacent channel
leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than
or equal to –5 dBm.
Figure 3. Channel Spectral Mask (250 mW, 922.4 to 923.4 MHz)
2.7.4. Antenna Power=20 mW, Freq. Band=920.6 to 922.2 MHz
Within the frequency band of 920.6 to 922.2 MHz, the channel spectral mask shall be as shown in Figure 4 when
operating with antenna power of more than 1 mW and less than or equal to 20 mW. The adjacent channel leakage
power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal
to –15 dBm.
Figure 4. Channel Spectral Mask (20 mW, 920.6 to 922.2 MHz)
Rev. 0.2
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2.7.5. Antenna Power=250 mW, Freq. Band=920.6 to 922.2 MHz
Within the frequency band of 920.6 to 922.2 MHz, the channel spectral mask shall be as shown in Figure 5 when
operating with antenna power of more than 20 mW and less than or equal to 250 mW. The adjacent channel
leakage power within the 200 kHz bandwidth at the upper and lower edges of the radio channel shall be less than
or equal to –5 dBm.
Figure 5. Channel Spectral Mask (250 mW, 920.6 to 922.2 MHz)
2.7.6. Antenna Power=1 mW, Freq. Band=928.15 to 929.65 MHz
Within the frequency band of 928.15 to 929.65 MHz, the channel spectral mask shall be as shown in Figure 6 when
operating with antenna power of less than or equal to 1 mW. The adjacent channel leakage power within the
100 kHz bandwidth at the upper and lower edges of the radio channel shall be less than or equal to –26 dBm.
Figure 6. Channel Spectral Mask (1 mW, 928.15 to 929.65 MHz)
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Rev. 0.2
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2.8. ARIB STD-T108 3.2(8) TX Spurious Emissions
The spurious emission strength at the antenna input in TX mode shall be less than the values shown in Table 2.
Table 2. TX Spurious Emission Specifications
Frequency Band
Spurious Emission Strength
(average power)
Reference BW
F ≤ 710 MHz
–36 dBm
100 kHz
710 MHz < F ≤ 900 MHz
–55 dBm
1 MHz
900 MHz < F ≤ 915 MHz
–55 dBm
100 kHz
915 MHz < F ≤ 920.3 MHz
–36 dBm
100 kHz
920.3 MHz < F ≤ 924.3 MHz
(except for |f – fc| ≤ 200 + 100 x n kHz)
–36 dBm (Pout ≤ 20 mW)
100 kHz
–29 dBm (Pout > 20 mW)
100 kHz
924.3 MHz < f ≤ 930.0 MHz
(except for |f – fc| ≤ 200 + 100 x n kHz
when unit channel bandwidth is 200 kHz)
–36 dBm
100 kHz
924.3 MHz < f ≤ 930.0 MHz
(except for |f – fc| ≤ 100 + 50 x n kHz
when unit channel bandwidth is 100 kHz)
–36 dBm
100 kHz
930 MHz < F ≤ 1 GHz
–55 dBm
100 kHz
1 GHz < F ≤ 1.215 GHz
–48 dBm
1 MHz
F > 1.215 GHz
–30 dBm
1 MHz
Rev. 0.2
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2.9. ARIB STD-T108 3.3 Receiver Conducted Spurious Emissions
The conducted spurious emission strength at the receiver input shall be less than the values shown in Table 3.
Table 3. RX Conducted Spurious Emission Specifications
12
Frequency Band
Spurious Emission Strength
Reference BW
F ≤ 710 MHz
–54 dBm
100 kHz
710 MHz < F ≤ 900 MHz
–55 dBm
1 MHz
900 MHz < F ≤ 915 MHz
–55 dBm
100 kHz
915 MHz < F ≤ 930 MHz
–54 dBm
100 kHz
930 MHz < F ≤ 1 GHz
–55 dBm
100 kHz
F > 1 GHz
–47 dBm
1 MHz
Rev. 0.2
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3. TX Measurement Results
3.1. ARIB STD-T108 3.2(1) Antenna Power
The allowed transmitter antenna power is specified as less than 20 mW (+13 dBm) within the frequency range of
920.6 MHz to 928.0 MHz (however up to +24 dBm antenna power is also allowed in the band of 920.6 to 923.4
MHz). The measured transmitter antenna power within this frequency range is shown in Figure 7. The Si4455 chip
complies with the requirements of ARIB STD-T108 3.2(1) for Transmit Antenna Power.
Limit:
20 mW=+13 dBm (max)
Measured: +13.00 dBm
Margin: 0.00 dB (PASS)
Figure 7. Transmitter Antenna Power (20 mW, 920.6 to 928.0 MHz)
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The allowed transmitter antenna power is specified as less than 20 mW (+13 dBm) within the frequency range of
920.6 MHz to 928.0 MHz (however up to +24 dBm antenna power is allowed in the band of 920.6 to 923.4 MHz).
The measured transmitter antenna power within this frequency range with adjusting to the output power to 10 mW
(since the output power of the targeted applications with Si4455 is typically +10 dBm) is shown in Figure 8. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(1) for Transmit Antenna Power.
Limit:
20 mW=+13 dBm (max)
+10.31 dBm
Margin: 2.69 dB (PASS)
Measured:
Figure 8. Transmitter Antenna Power (10 mW, 920.6 to 928.0 MHz)
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The allowed transmitter antenna power is specified as less than 1 mW (0 dBm) within the frequency range of
916.0 MHz to 916.8 MHz and from 928.15 MHz to 929.65 MHz. The measured transmitter antenna power within
this frequency range is shown in Figure 9. The Si4455 chip complies with the requirements of ARIB STD-T108
3.2(1) for Transmit Antenna Power.
Limit:
1 mW=0 dBm (max)
–0.02 dBm
Margin: 0.02 dB (PASS)
Measured:
Figure 9. Transmitter Antenna Power (1 mW, 916.0 to 916.8 MHz and from 928.15 to 929.65 MHz)
Rev. 0.2
15
AN800
3.2. ARIB STD-T108 3.2(2) Tolerance of Antenna Power
The part-to-part variation of TX output power of the Si4455 chips is typically +0.5/–1.5 dB at maximum output
power, at a given frequency and VDD supply voltage. The Si4455 chips therefore comply with the requirements of
ARIB STD-T108 3.2(2) Tolerance of Antenna Power.
When using Class-E type matching the TX output power of the Si4455 RFIC exhibits a dependence upon VDD
supply voltage (due to use of a switching-type power amplifier), it is necessary to operate a fixed VDD supply
voltage. In order to avoid this VDD dependence it is recommended to use Switched-Current matching where the
output power has a flat characteristic over the VDD supply voltage variation, but in this case the current
consumption is higher.
3.3. ARIB STD-T108 3.2(3) Radio Channel
The Si4455 RFICs are capable of complying with all requirements of ARIB STD-T108 when operating with one unit
radio channel (N=1), and is thus inherently capable of complying with wider radio channels (i.e., N=2 to 5).
However, compliance is dependent upon selection of an appropriate modulation protocol (i.e, data rate and
deviation).
3.4. ARIB STD-T108 3.2(4) Frequency Tolerance
The frequency accuracy of the Si4455 RFICs is solely dependent upon the frequency accuracy of the crystal
reference signal. Compliance with this requirement is thus largely determined by the frequency tolerance of the
selected crystal blank or external reference oscillator. All measurements within this document were taken with the
crystal oscillator adjusted for zero frequency error.
3.5. ARIB STD-T108 3.2(5) Modulation Method
The modulation method is not specified in ARIB STD-T108. All measurements within this document were taken
with 2GFSK, data rate = 100 kbps, and deviation = 50 kHz (unless noted otherwise). Compliance with certain
requirements of the standard are heavily influenced by the selection of the modulation protocol; a greater margin of
compliance may be obtained with a different selection of modulation protocol (e.g., lowering the data rate and/or
deviation).
Furthermore, it is not possible (even on a theoretical basis) to simultaneously comply with all requirements of
ARIB STD-T108 with this selection of modulation protocol. For example, the Frequency Tolerance specification of
STD-T108 3.2(4) requires operation with up to ±20 ppm frequency error (i.e., ±18.4 kHz at 920 MHz). It is not
possible to comply with the Adjacent Channel Leakage Power requirements of ARIB STD-T108 3.2(7) while
operating with ±18.4 kHz frequency offset from channel center frequency with selection of data rate = 100 kbps
and deviation = 50 kHz. The modulation bandwidth of such a signal is sufficiently wide that any error in frequency
will cause in an increase in integrated power in the adjacent channel bandwidth, resulting in failure to comply with
the Adjacent Channel Leakage Power spec.
16
Rev. 0.2
AN800
3.6. ARIB STD-T108 3.2(6) Occupied Frequency Bandwidth
The allowed occupied frequency bandwidth is specified in ARIB STD-T108 3.2(6) as less than (n x 100 kHz) within
the frequency band from 928.15 MHz to 929.65 MHz, and less than (n x 200 kHz) in all other frequency bands. The
integer number ‘N’ represents the number of unit radio channels used by the system, and may range in value from
N=1 to N=5.
The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown
Figure 10. The selected modulation protocol was 2GFSK, DR = 100 kbps, Deviation = 50 kHz. The Si4455 chip
complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency
band.
Limit:
200 kHz (max, for N=1)
177.7 kHz
Margin: 22.3 kHz (PASS)
Measured:
Figure 10. Occupied Bandwidth (DR=100 kbps Dev=50 kHz, 920.6 to 928.0 MHz)
Rev. 0.2
17
AN800
The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in
Figure 11 with DR = 96 kbps, Deviation = 48 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band.
Limit:
200 kHz (max, for N=1)
170.0 kHz
Margin: 30.0 kHz (PASS)
Measured:
Figure 11. Occupied Bandwidth (DR=96 kbps Dev=48 kHz, 920.6 to 928.0 MHz)
18
Rev. 0.2
AN800
The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in
Figure 12 with DR = 80 kbps, Deviation = 40 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band.
Limit:
200 kHz (max, for N=1)
141.0 kHz
Margin: 59.0 kHz (PASS)
Measured:
Figure 12. Occupied Bandwidth (DR=80 kbps Dev=40 kHz, 920.6 to 928.0 MHz)
Rev. 0.2
19
AN800
The measured occupied frequency bandwidth within the frequency range of 920.6 MHz to 928.0 MHz is shown in
Figure 13 with DR = 200 kbps, Deviation = 100 kHz. The Si4455 chip complies with the requirements of ARIB STDT108 3.2(6) for Occupied Frequency Bandwidth within this frequency band with lumping two units of radio channels
(N=2).
Limit:
400 kHz (max, for N=2)
341.8 kHz
Margin: 58.2 kHz (PASS)
Measured:
Figure 13. Occupied Bandwidth (DR=200 kbps Dev=100 kHz, 920.6 to 928.0 MHz, N=2)
20
Rev. 0.2
AN800
The measured occupied frequency bandwidth within the frequency range of 928.15 MHz to 929.65 MHz is shown
in Figure 14. The selected modulation protocol was 2GFSK, DR = 50 kbps, Deviation = 25 kHz. The Si4455 chip
complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency
band.
Limit:
100 kHz (max, for N=1)
87.25 kHz
Margin: 12.75 kHz (PASS)
Measured:
Figure 14. Occupied Bandwidth (DR=50 kbps Dev=25 kHz, 928.15 to 929.65 MHz)
Rev. 0.2
21
AN800
The measured occupied frequency bandwidth within the frequency range of 928.15 MHz to 929.65 MHz is shown
in Figure 15. The selected modulation protocol was 2GFSK, DR = 100 kbps, Deviation = 50 kHz. The Si4455 chip
complies with the requirements of ARIB STD-T108 3.2(6) for Occupied Frequency Bandwidth within this frequency
band with lumping two units of radio channels (N=2).
Limit:
200 kHz (max, for N=2)
177.2 kHz
Margin: 22.8 kHz (PASS)
Measured:
Figure 15. Occupied Bandwidth (DR=100 kbps Dev=50 kHz, 928.15 to 929.65 MHz, N=2)
22
Rev. 0.2
AN800
3.7. ARIB STD-T108 3.2(7) Adjacent Channel Leakage Power
The allowed adjacent channel leakage power is specified in ARIB STD-T108 3.2(7), and is a function of channel
center frequency and output power level.
3.7.1. ACP, Antenna power=10 mW, Freq. Band=920.6 to 928.0 MHz
Within the frequency band of 920.6 to 928.0 MHz when operating with antenna power of more than 1 mW and less
than or equal to 20 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the upper
and lower edges of the radio channel shall be less than or equal to –15 dBm.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 16. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with practically no margins.
Limit:
–15 dBm (max)
–15.33 dBm
Margin: 0.33 dB (PASS)
Measured:
Figure 16. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 928.0 MHz, N=1)
Rev. 0.2
23
AN800
Compliance with larger margins can be achieved by decreasing the data rate / frequency deviation of the
modulation. The measured adjacent channel leakage powers with different data rates are shown in Figure 17 and
Figure 18.
The selected modulation parameters were DR = 96 kbps and Deviation = 48 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 17. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol.
Limit:
–15 dBm (max)
Measured: –17.01 dBm
Margin: 2.01 dB (PASS)
Figure 17. Adjacent Channel Leakage Power
(DR=96 kbps Dev=48 kHz, 10 mW, 920.6 to 928.0 MHz, N=1)
24
Rev. 0.2
AN800
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 18. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with large margins.
Limit:
–15 dBm (max)
–24.26 dBm
Margin: 9.26 dB (PASS)
Measured:
Figure 18. Adjacent Channel Leakage Power
(DR=80 kbps Dev=40 kHz, 10 mW, 920.6 to 928.0 MHz, N=1)
Rev. 0.2
25
AN800
The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio
channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz
is shown in Figure 19, and is observed to comply with the spec with over 20 dB of margin. This test also inherently
verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels.
Limit:
–15 dBm (max)
–38.86 dBm
Margin: 23.86 dB (PASS)
Measured:
Figure 19. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 928.0 MHz, N=2)
using N=2 unit radio channels the data rate can be increased up to 200 kbps.
26
Rev. 0.2
AN800
The selected modulation parameters were DR = 200 kbps and Deviation = 100 kHz. The measurement was taken
assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in
Figure 20. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with lumping two units of radio channels.
Limit:
–15 dBm (max)
–18.01 dBm
Margin: 3.01 dB (PASS)
Measured:
Figure 20. Adjacent Channel Leakage Power
(DR=200 kbps Dev=100 kHz, 10 mW, 920.6 to 928.0 MHz, N=2)
Rev. 0.2
27
AN800
3.7.2. Spectral Mask, Antenna power=10 mW, Freq. Band=922.4 to 928.0 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100
kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use
ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired
signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is
adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz
bandwidth.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 21. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol. Of course with selecting lower data rates / frequency deviations compliance with larger
margins can be obtained.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–57.01 dBm /3 kHz= –41.81 dBm/100 kHz
Margin: 5.81 dB (PASS)
Measured:
Figure 21. Spectral Mask (DR=100 kbps Dev=50 kHz, 10mW, 922.4 to 928.0 MHz, N=1)
28
Rev. 0.2
AN800
A greater margin of compliance may be obtained when using two unit radio channels (N=2). The measured
spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 22, and is observed to
comply with the spec with over 8 dB of margin. This test also inherently verifies compliance with wider radio
channels, such as when using N=3, 4, or 5 unit radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–59.95 dBm /3 kHz= –44.75 dBm/100 kHz
Margin: 8.75 dB (PASS)
Measured:
Figure 22. Spectral Mask (DR=100 kbps Dev=50 kHz, 10 mW, 922.4 to 928.0 MHz, N=2)
When using N=2 unit radio channels the data rate can be increased up to 200 kbps.
Rev. 0.2
29
AN800
The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 23. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with lumping two units of radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–54.47 dBm /3 kHz= –39.27 dBm/100 kHz
Margin: 3.27 dB (PASS)
Measured:
Figure 23. Spectral Mask (DR=200 kbps Dev=100 kHz, 10 mW, 922.4 to 928.0 MHz, N=2)
30
Rev. 0.2
AN800
3.7.3. Spectral Mask, Antenna Power=10 mW, Freq. Band=920.6 to 922.2 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 200 kHz + (n–1) x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/
100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to
use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the
desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement
limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/
3 kHz bandwidth.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 24. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with practically no margins. The limiting factor in performance is the selected modulation
protocol which contains discrete tones that exceed the limits of the spectral mask.
Margin:
0.87 dB (PASS)
Figure 24. Spectral Mask (DR=100 kbps Dev=50 kHz, 10 mW, 920.6 to 922.2 MHz, N=1)
Compliance with larger margins can be achieved by decreasing the data rate / frequency deviation of the
modulation.
Rev. 0.2
31
AN800
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 25. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–54.13 dBm /3 kHz= –38.93 dBm/100 kHz
Margin: 2.93 dB (PASS)
Measured:
Figure 25. Spectral Mask (DR=80 kbps Dev=40 kHz, 10 mW, 920.6 to 922.2 MHz, N=1)
32
Rev. 0.2
AN800
Compliance with greater margins may also be obtained when using two unit radio channels (N=2). The measured
spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 26, and is observed to
comply with the spec with over 13 dB of margin. This test also inherently verifies compliance with wider radio
channels, such as when using n=3, 4, or 5 unit radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–56.73 dBm /3 kHz= –41.53 dBm/100 kHz
Margin: 5.53 dB (PASS)
Measured:
Figure 26. Spectral Mask (DR=100 kbps Dev= 50kHz, 10 mW, 920.6 to 922.2 MHz, N=2)
Rev. 0.2
33
AN800
When using N=2 unit radio channels the data rate can be increased up to 150 kbps. The measured spectral mask
for the scenario of N=2 with DR=150 kbps Dev=75 kHz is shown in Figure 27, and is observed to comply with the
spec.
Limit:
–36 dBm /100 kHz=–51.2 dBm /3 kHz (max)
–54.29 dBm /3 kHz= –39.09 dBm/100 kHz
Margin: 3.09 dB (PASS)
Measured:
Figure 27. Spectral Mask (DR=150 kbps Dev=75 kHz, 10 mW, 920.6 to 922.2 MHz, N=2)
34
Rev. 0.2
AN800
In order to keep the compliance in this band the data rate cannot be increased up to 200 kbps. The measured
spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 28, and is observed to
fail against the spec.
Margin:
–18.88 dB (FAIL)
Figure 28. Spectral Mask (DR=200 kbps Dev=100 kHz, 10 mW, 920.6 to 922.2 MHz, N=2)
Rev. 0.2
35
AN800
3.7.4. ACP, Antenna power=20 mW, Freq. Band=920.6 to 928.0 MHz
Within the frequency band of 920.6 to 928.0 MHz when operating with antenna power of more than 1 mW and less
than or equal to 20 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the upper
and lower edges of the radio channel shall be less than or equal to –15 dBm.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 29. The Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol.
Limit:
–15 dBm (max)
–12.90 dBm
Margin: –2.10 dB (FAIL)
Measured:
Figure 29. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 928.0 MHz, N=1)
36
Rev. 0.2
AN800
Compliance can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured
adjacent channel leakage power with different data rate is shown in Figure 30.
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 30. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol.
Limit:
–15 dBm (max)
Measured: –22.03 dBm
Margin: 7.03 dB (PASS)
Figure 30. Adjacent Channel Leakage Power
(DR=80 kbps Dev=40 kHz, 20 mW, 920.6 to 928.0 MHz, N=1)
Rev. 0.2
37
AN800
The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio
channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz
is shown in Figure 31, and is observed to comply with the spec with over 20 dB of margin. This test also inherently
verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels.
Limit:
–15 dBm (max)
–36.04 dBm
Margin: 21.04 dB (PASS)
Measured:
Figure 31. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 928.0 MHz, N=2)
When using N=2 unit radio channels the data rate can be increased up to 180 kbps.
38
Rev. 0.2
AN800
The selected modulation parameters were DR = 180 kbps and Deviation = 90 kHz. The measurement was taken
assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in
Figure 32. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with lumping two units of radio channels.
Limit:
–15 dBm (max)
–19.43 dBm
Margin: 4.43 dB (PASS)
Measured:
Figure 32. Adjacent Channel Leakage Power
(DR=180 kbps Dev=90 kHz, 20 mW, 920.6 to 928.0 MHz, N=2)
Rev. 0.2
39
AN800
The selected modulation parameters were DR = 200 kbps and Deviation = 100 kHz. The measurement was taken
assuming operation with one unit radio channel (N=2). The measured adjacent channel leakage power is shown in
Figure 33. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power with no margins for the selected modulation protocol when using two units of radio channels.
Limit:
–15 dBm (max)
–15.48 dBm
Margin: 0.48 dB (PASS)
Measured:
Figure 33. Adjacent Channel Leakage Power
(DR=200 kbps Dev=100 kHz, 20 mW, 920.6 to 928.0 MHz, N=2)
40
Rev. 0.2
AN800
3.7.5. Spectral Mask, Antenna power=20 mW, Freq. Band=922.4 to 928.0 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/
100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to
use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the
desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement
limit is adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/
3 kHz bandwidth.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 34. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol. Of course with selecting lower data rates / frequency deviations a compliance with larger
margins can be achieved.
Margin:
2.85 dB (PASS)
Figure 34. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 922.4 to 928.0 MHz
Rev. 0.2
41
AN800
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 35. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol.
Limit:
–36 dBm /100 kHz=–51.2 dBm /3 kHz (max)
–54.50 Bm /3 kHz= –39.30 dBm/100 kHz
Margin: 3.30 dB (PASS)
Measured:
Figure 35. Spectral Mask (DR=80 kbps Dev=40 kHz, 20 mW, 922.4 to 928.0 MHz, N=1)
42
Rev. 0.2
AN800
A greater margin of compliance may be obtained when using two unit radio channels (N=2). The measured
spectral mask for the scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 36, and is observed to
comply with the spec with larger margins. This test also inherently verifies compliance with wider radio channels,
such as when using N=3, 4, or 5 unit radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–57.90 dBm /3 kHz= –42.70 dBm/100 kHz
Margin: 6.70 dB (PASS)
Measured:
Figure 36. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 922.4 to 928.0 MHz, N=2)
When using N=2 unit radio channels the data rate can be increased up to 180 kbps.
Rev. 0.2
43
AN800
The measured spectral mask for the scenario of N=2 with DR=180 kbps Dev=90 kHz is shown in Figure 37. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with lumping two units of radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–53.58 dBm /3 kHz= –38.38 dBm/100 kHz
Margin: 2.38 dB (PASS)
Measured:
Figure 37. Spectral Mask (DR=180 kbps Dev=90 kHz, 20 mW, 922.4 to 928.0 MHz, N=2)
44
Rev. 0.2
AN800
The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 38. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with no margins.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–51.92 dBm /3 kHz= –36.72 dBm/100 kHz
Margin: 0.72 dB (PASS)
Measured:
Figure 38. Spectral Mask (DR=200 kbps Dev=100 kHz, 20 mW, 922.4 to 928.0 MHz, N=2)
Rev. 0.2
45
AN800
3.7.6. Spectral Mask, Antenna Power= 20 mW, Freq. Band=920.6 to 922.2 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 200 kHz + (n–1) x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/
100 kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to
use ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the
desired signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement
limit is adjusted downwards by 10 x log(100kHz/3kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3
kHz bandwidth.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 39. The
Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol.

Margin: –1.72 dB (FAIL)
Figure 39. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 922.2 MHz, N=1)
46
Rev. 0.2
AN800
Compliance can be achieved by decreasing the data rate / frequency deviation of the modulation. The measured
results with different data rates are shown in Figure 40 and Figure 41.
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 40. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with no margins.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
Measured: –51.80 dBm /3 kHz= –36.60 dBm/100 kHz
Margin: 0.60 dB (PASS)
Figure 40. Spectral Mask (DR=80 kbps Dev=40 kHz, 20 mW, 920.6 to 922.2 MHz, N=1)
Rev. 0.2
47
AN800
The selected modulation parameters were DR = 70 kbps and Deviation = 35 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 41. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with acceptable margins.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–54.41 dBm /3 kHz= –39.21 dBm/100 kHz
Margin: 3.21 dB (PASS)
Measured:
Figure 41. Spectral Mask (DR=70 kbps Dev=35 kHz, 20 mW, 920.6 to 922.2 MHz, N=1)
48
Rev. 0.2
AN800
Compliance may be obtained when using two unit radio channels (N=2). The measured spectral mask for the
scenario of N=2 with DR=100 kbps Dev=50 kHz is shown in Figure 42, and is observed to comply with the spec
with larger margins. This test also inherently verifies compliance with wider radio channels, such as when using
N=3, 4, or 5 unit radio channels.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–54.47 dBm /3 kHz= –39.27 dBm/100 kHz
Margin: 3.27 dB (PASS)
Measured:
Figure 42. Spectral Mask (DR=100 kbps Dev=50 kHz, 20 mW, 920.6 to 922.2 MHz, N=2)
When using N=2 unit radio channels the data rate can be slightly further increased.
Rev. 0.2
49
AN800
The measured spectral mask for the scenario of N=2 with DR=120 kbps Dev=60 kHz is shown in Figure 43. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with lumping two units of radio channels.
Margin:
3.33 dB (PASS)
Figure 43. Spectral Mask (DR=120 kbps Dev=60 kHz, 20 mW, 920.6 to 922.2 MHz, N=2)
50
Rev. 0.2
AN800
The measured spectral mask for the scenario of N=2 with DR=150 kbps Dev=75 kHz is shown in Figure 44. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with no margins.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–51.90 dBm /3 kHz= –36.70 dBm/100 kHz
Margin: 0.70 dB (PASS)
Measured:
Figure 44. Spectral Mask (DR=150 kbps Dev=75 kHz, 20 mW, 920.6 to 922.2 MHz, N=2)
Rev. 0.2
51
AN800
The measured spectral mask for the scenario of N=2 with DR=200 kbps Dev=100 kHz is shown in Figure 45. The
Si4455 chip does not comply with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol.
Limit:
–36 dBm /100 kHz= –51.2 dBm /3 kHz (max)
–29.86 dBm /3 kHz= –14.66 dBm/100 kHz
Margin: –21.34 dB (FAIL)
Measured:
Figure 45. Spectral Mask (DR=200 kbps Dev=100 kHz, 20 mW, 920.6 to 922.2 MHz, N=2)
52
Rev. 0.2
AN800
3.7.7. ACP, Antenna power= 1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz
Within the frequency band of 916.0 to 916.8 MHz and 920.6 to 928.0 MHz when operating with antenna power of
less than or equal to 1 mW, the integrated adjacent channel leakage power within the 200 kHz bandwidth at the
upper and lower edges of the radio channel shall be less than or equal to –26 dBm.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 46. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with no margins.
Limit:
–26 dBm (max)
–26.01 dBm
Margin: 0.01 dB (PASS)
Measured:
Figure 46. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=1)
Rev. 0.2
53
AN800
Compliance with margins can be achieved by decreasing the data rate / frequency deviation of the modulation. The
measured adjacent channel leakage powers with different data rates are shown in Figure 47 and Figure 48.
The selected modulation parameters were DR = 92 kbps and Deviation = 46 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 47. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol.
Limit:
–26 dBm (max)
Measured: –29.31 dBm
Margin: 3.31 dB (PASS)
Figure 47. Adjacent Channel Leakage Power
(DR=92 kbps Dev=46 kHz, 1 mW, 916.0 to 916.8 MHz, N=1)
54
Rev. 0.2
AN800
The selected modulation parameters were DR = 80 kbps and Deviation = 40 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 48. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) with great margins for
Adjacent Channel Leakage Power for the selected modulation protocol.
Limit:
–26 dBm (max)
–35.17 dBm
Margin: 9.17 dB (PASS)
Measured:
Figure 48. Adjacent Channel Leakage Power
(DR=80 kbps Dev=40 kHz, 1 mW, 916.0 to 916.8 MHz, N=1)
Rev. 0.2
55
AN800
The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio
channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=100 kbps Dev=50 kHz
is shown in Figure 49, and is observed to comply with the spec with over 20 dB of margin. This test also inherently
verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels.
Limit:
–26 dBm (max)
–49.60 dBm
Margin: 23.60 dB (PASS)
Measured:
Figure 49. Adjacent Channel Leakage Power
(DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=2)
56
Rev. 0.2
AN800
3.7.8. Spectral Mask, Antenna power= 1 mW, Freq. Band=916.0 to 916.8 MHz and 920.6 to 928.0 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 200 kHz + n x 100 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100
kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use
ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired
signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is
adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz
bandwidth.
The selected modulation parameters were DR = 100 kbps and Deviation = 50 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 50. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with large margins. Of course with selecting lower data rates / frequency deviations
compliance with greater margins can be obtained.
Margin:
16.07 dB (PASS)
Figure 50. Spectral Mask (DR=100 kbps Dev=50 kHz, 1 mW, 916.0 to 916.8 MHz, N=1)
Rev. 0.2
57
AN800
3.7.9. ACP, Antenna power= 1 mW, Freq. Band=928.15 to 929.65 MHz
Within the frequency band of 928.15 to 929.65 MHz when operating with an antenna power of less than or equal to
1 mW, the integrated adjacent channel leakage power within the 100 kHz bandwidth at the upper and lower edges
of the radio channel shall be less than or equal to –26 dBm.
The selected modulation parameters were DR = 50 kbps and Deviation = 25 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 51. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol with no margins.
Limit:
–26 dBm (max)
–26.34 dBm
Margin: 0.34 dB (PASS)
Measured:
Figure 51. Adjacent Channel Leakage Power
(DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=1)
58
Rev. 0.2
AN800
Compliance with greater margins can be achieved by decreasing the data rate / frequency deviation of the
modulation. The measured adjacent channel leakage power with lower data rate is shown in Figure 52.
The selected modulation parameters were DR = 40 kbps and Deviation = 20 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured adjacent channel leakage power is shown in
Figure 52. The Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Adjacent Channel
Leakage Power for the selected modulation protocol.
Limit:
–26 dBm (max)
Measured: –35.53 dBm
Margin: 9.53 dB (PASS)
Figure 52. Adjacent Channel Leakage Power
(DR=40 kbps Dev=20 kHz, 1 mW, 928.15 to 929.65 MHz, N=1)
Rev. 0.2
59
AN800
The Si4455 chip easily complies with the adjacent channel leakage specification when using two unit radio
channels (N=2). The measured adjacent channel leakage for the scenario of N=2 with DR=50 kbps Dev=25 kHz is
shown in Figure 53, and is observed to comply with the spec with over 20 dB of margin. This test also inherently
verifies compliance with wider radio channels, such as when using N=3, 4, or 5 unit radio channels.
Limit:
–26 dBm (max)
–51.07 dBm
Margin: 25.07 dB (PASS)
Measured:
Figure 53. Adjacent Channel Leakage Power
(DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=2)
60
Rev. 0.2
AN800
3.7.10. Spectral Mask, Antenna power= 1 mW, Freq. Band=928.15 to 929.65 MHz
Within the frequency band of 915.0 to 930.0 MHz at frequency offsets from the channel center frequency of
|f – fc| > 100 kHz + n x 50 kHz, the limit of unwanted spurious signals shall be less than or equal to –36 dBm/100
kHz. Although the allowed spurious level is specified in a 100 kHz reference bandwidth, it is not appropriate to use
ResBW=100 kHz while taking the measurement due to the proximity to the modulation bandwidth of the desired
signal. Accordingly, a ResBW=3 kHz configuration is used for the measurement, and the measurement limit is
adjusted downwards by 10 x log(100 kHz/3 kHz) = 15.2 dB, resulting in a modified spec limit of –51.2 dBm/3 kHz
bandwidth.
The selected modulation parameters were DR = 50 kbps and Deviation = 25 kHz. The measurement was taken
assuming operation with one unit radio channel (N=1). The measured spectral mask is shown in Figure 54. The
Si4455 chip complies with the requirements of ARIB STD-T108 3.2(7) for Spectral Mask for the selected
modulation protocol with large margins. Of course with selecting lower data rates / frequency deviations
compliance with greater margins can be obtained.
Margin:
13.97 dB (PASS)
Figure 54. Spectral Mask (DR=50 kbps Dev=25 kHz, 1 mW, 928.15 to 929.65 MHz, N=1)
Rev. 0.2
61
AN800
3.8. ARIB STD-T108 3.2(8) Spurious Emissions
The allowed level of spurious emissions is specified in ARIB STD-T108 3.2(8) and shall not exceed the limits
shown in Table 2. The Si4455-B1 device was configured for an output power level of +10 dBm and +13 dBm on a
channel center frequency of 925.8 MHz for all tests within this section. Since the +10 dBm and 0 dBm schematics
are identical, the compliance is only demonstrated at +10 dBm (beside the +13 dBm case what uses different
matching network). The selected modulation protocol was 2GFSK with DR = 100 kbps and Deviation = 50 kHz.
3.8.1. F ≤ 710 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –36 dBm in any
100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 55. The
Si4455 chip easily complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –67.08 dBm
Margin: 31.08 dB (PASS)
Figure 55. Spurious Emissions (10 mW, F710 MHz)
62
Rev. 0.2
AN800
3.8.2. 710 MHz < F ≤ 900 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than
–55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 56. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /1 MHz (max)
Measured: –62.62 dBm
Margin: 7.62 dB (PASS)
Figure 56. Spurious Emissions (10 mW, 710-900 MHz)
Rev. 0.2
63
AN800
3.8.3. 900 MHz < F ≤ 915 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 57. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –74.52 dBm
Margin: 19.52 dB (PASS)
Figure 57. Spurious Emissions (10 mW, 900-915 MHz)
64
Rev. 0.2
AN800
3.8.4. 915 MHz < F ≤ 920.3 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 915–920.3 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 58. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –68.17 dBm
Margin: 32.17 dB (PASS)
Figure 58. Spurious Emissions (10 mW, 915-920.3 MHz)
Rev. 0.2
65
AN800
3.8.5. 920.3 MHz < F ≤ 924.3 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 920.3–924.3 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 59. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –56.19 dBm
Margin: 20.19 dB (PASS)
Figure 59. Spurious Emissions (10 mW, 920.3-924.3 MHz)
66
Rev. 0.2
AN800
3.8.6. 924.3 MHz < F ≤ 930.0 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 924.3–930.0 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. This limit applies at all frequencies within this sub-band except at frequency
offsets from the channel center frequency of |f – fc| ≤ 200 kHz + n x 100 kHz. The measured spurious emissions
within this frequency band are shown in Figure 60 and Figure 61, lower and upper range, respectively. The Si4455
chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –41.60 dBm
Margin: 5.60 dB (PASS)
Figure 60. Spurious Emissions (10 mW, 924.3-930.0 MHz, lower range)
Rev. 0.2
67
AN800
Limit:
–36 dBm /100 kHz (max)
Measured: –41.90 dBm
Margin: 5.90 dB (PASS)
Figure 61. Spurious Emissions (10 mW, 924.3-930.0 MHz, upper range)
68
Rev. 0.2
AN800
3.8.7. 930.0 MHz < F ≤ 1 GHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 930.0–1000 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 62. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –63.08 dBm
Margin: 8.08 dB (PASS)
Figure 62. Spurious Emissions (10 mW, 930.0-1000 MHz)
Rev. 0.2
69
AN800
3.8.8. 1000 MHz < F ≤ 1215 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions within the 1–1.215 GHz frequency band is specified as less than –48 dBm
in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 63.
The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–48 dBm /1 MHz (max)
Measured: –66.04 dBm
Margin: 18.04 dB (PASS)
Figure 63. Spurious Emissions (10 W, 1–1.215 GHz)
70
Rev. 0.2
AN800
3.8.9. F > 1215 MHz, Antenna Power= 10 mW
The allowed level of spurious emissions at frequencies above 1.215 GHz is specified as less than –30 dBm in any
1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 64. The
Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–30 dBm /1 MHz (max)
Measured: –39.44 dBm
Margin: 9.44 dB (PASS)
Figure 64. Spurious Emissions (10 mW, above 1.215 GHz)
Rev. 0.2
71
AN800
3.8.10. F ≤ 710 MHz, Antenna Power=20 mW
The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –36 dBm in any
100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 65. The
Si4455 chip easily complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –73.77 dBm
Margin: 37.77 dB (PASS)
Figure 65. Spurious Emissions (20 mW, F710 MHz)
72
Rev. 0.2
AN800
3.8.11. 710 MHz < F ≤ 900 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than
–55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 66. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /1 MHz (max)
Measured: –61.80 dBm
Margin: 6.80 dB (PASS)
Figure 66. Spurious Emissions (20 mW, 710-900 MHz)
Rev. 0.2
73
AN800
3.8.12. 900 MHz < F ≤ 915 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 67. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –72.92 dBm
Margin: 17.92 dB (PASS)
Figure 67. Spurious Emissions (20 mW, 900–915 MHz)
74
Rev. 0.2
AN800
3.8.13. 915 MHz < F ≤ 920.3 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 915–920.3 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 68. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –66.00 dBm
Margin: 30.00 dB (PASS)
Figure 68. Spurious Emissions (20 mW, 915–920.3 MHz)
Rev. 0.2
75
AN800
3.8.14. 920.3 MHz < F ≤ 924.3 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 920.3–924.3 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 69. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –53.69 dBm
Margin: 17.69 dB (PASS)
Figure 69. Spurious Emissions (20 mW, 920.3–924.3 MHz)
76
Rev. 0.2
AN800
3.8.15. 924.3 MHz < F ≤ 930.0 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 924.3–930.0 MHz frequency band is specified as less than
–36 dBm in any 100 kHz bandwidth. This limit applies at all frequencies within this sub-band except at frequency
offsets from the channel center frequency of |f – fc| ≤ 200 kHz + n x 100 kHz. The measured spurious emissions
within this frequency band are shown in Figure 70 and Figure 71, lower and upper range, respectively. The Si4455
chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–36 dBm /100 kHz (max)
Measured: –39.24 dBm
Margin: 3.24 dB (PASS)
Figure 70. Spurious Emissions (20 mW, 924.3–930.0 MHz, lower range)
Rev. 0.2
77
AN800
Limit:
–36 dBm /100 kHz (max)
Measured: –39.37 dBm
Margin: 3.37 dB (PASS)
Figure 71. Spurious Emissions (20 mW, 924.3–930.0 MHz, upper range)
78
Rev. 0.2
AN800
3.8.16. 930.0 MHz < F ≤ 1 GHz, Antenna Power= 20 mW
The allowed level of spurious emissions within the 930.0–1000 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 72. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –60.73 dBm
Margin: 5.73 dB (PASS)
Figure 72. Spurious Emissions (20 mW, 930.0–1000 MHz)
Rev. 0.2
79
AN800
3.8.17. 1000 MHz < F ≤ 1215 MHz, Antenna Power= 20mW
The allowed level of spurious emissions within the 1–1.215 GHz frequency band is specified as less than –48 dBm
in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 73.
The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–48 dBm /1 MHz (max)
Measured: –64.13 dBm
Margin: 16.13 dB (PASS)
Figure 73. Spurious Emissions (20 mW, 1–1.215 GHz)
80
Rev. 0.2
AN800
3.8.18. F > 1215 MHz, Antenna Power= 20 mW
The allowed level of spurious emissions at frequencies above 1.215 GHz is specified as less than –30 dBm in any
1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 74. The
Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–30 dBm /1 MHz (max)
Measured: –39.69 dBm
Margin: 9.69 dB (PASS)
Figure 74. Spurious Emissions (20 mW, above 1.215 GHz)
Rev. 0.2
81
AN800
4. RX Measurement Results
4.1. ARIB STD-T108 3.3 Receiver Conducted Spurious Emissions
The allowed level of conducted spurious emissions at the receiver input is specified in ARIB STD-T108 3.3 and
shall not exceed the limits shown in Table 3. The Si4455-B1 device was configured for a channel center frequency
of 925.8 MHz for all tests within this section. Since the +10 dBm and +13 dBm schematics are different the
compliance must be demonstrated in both cases.
4.1.1. F ≤ 710 MHz, using the +10 dBm schematic
The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –54 dBm in any
100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 75. The
Si4455 chip easily complies with the specified level of spurious emissions within this sub-band.
Limit:
–54 dBm /100 kHz (max)
Measured: –85.21 dBm
Margin: 31.21 dB (PASS)
Figure 75. RX Conducted Spurious Emissions (F710 MHz)
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4.1.2. 710 MHz < F ≤ 900 MHz, using the +10 dBm schematic
The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than
–55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 76. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /1 MHz (max)
Measured: –80.38 dBm
Margin: 25.38 dB (PASS)
Figure 76. RX Conducted Spurious Emissions (710–900 MHz)
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4.1.3. 900 MHz < F ≤ 915 MHz, using the +10 dBm schematic
The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 77. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –93.17 dBm
Margin: 38.17 dB (PASS)
Figure 77. RX Conducted Spurious Emissions (900–915 MHz)
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4.1.4. 915 MHz < F ≤ 930 MHz, using the +10 dBm Schematic
The allowed level of spurious emissions within the 915–930 MHz frequency band is specified as less than
–54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 78. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–54 dBm /100 kHz (max)
Measured: –93.15 dBm
Margin: 39.15 dB (PASS)
Figure 78. RX Conducted Spurious Emissions (915–930 MHz)
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4.1.5. 930 MHz < F ≤ 1000 MHz, using the +10 dBm schematic
The allowed level of spurious emissions within the 930–1000 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 79. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –91.13 dBm
Margin: 36.13 dB (PASS)
Figure 79. RX Conducted Spurious Emissions (930–1000 MHz)
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4.1.6. F > 1 GHz, using the +10 dBm schematic
The allowed level of spurious emissions at frequencies above 1000 MHz is specified as less than –47 dBm in any
1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 80. The
Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–47 dBm /1 MHz (max)
Measured: –72.71 dBm
Margin: 25.71 dB (PASS)
Figure 80. RX Conducted Spurious Emissions (above 1 GHz)
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4.1.7. F ≤ 710 MHz, using the +13 dBm schematic
The allowed level of spurious emissions at frequencies below 710 MHz is specified as less than –54 dBm in any
100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 81. The
Si4455 chip easily complies with the specified level of spurious emissions within this sub-band.
Limit:
–54 dBm /100 kHz (max)
Measured: –88.30 dBm
Margin: 34.30 dB (PASS)
Figure 81. RX Conducted Spurious Emissions (F710 MHz)
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4.1.8. 710 MHz < F ≤ 900 MHz, using the +13 dBm schematic
The allowed level of spurious emissions within the 710–900 MHz frequency band is specified as less than
–55 dBm in any 1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 82. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /1 MHz (max)
Measured: –80.24 dBm
Margin: 25.24 dB (PASS)
Figure 82. RX Conducted Spurious Emissions (710–900 MHz)
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4.1.9. 900 MHz < F ≤ 915 MHz, using the +13 dBm schematic
The allowed level of spurious emissions within the 900–915 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 83. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –92.83 dBm
Margin: 37.83 dB (PASS)
Figure 83. RX Conducted Spurious Emissions (900–915 MHz)
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4.1.10. 915 MHz < F ≤ 930 MHz, using the +13 Bm schematic
The allowed level of spurious emissions within the 915–930 MHz frequency band is specified as less than
–54 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 84. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–54 dBm /100 kHz (max)
Measured: –92.88 Bm
Margin: 38.88 dB (PASS)
Figure 84. RX Conducted Spurious Emissions (915–930 MHz)
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4.1.11. 930 MHz < F ≤ 1000 MHz, using the +13 dBm schematic
The allowed level of spurious emissions within the 930–1000 MHz frequency band is specified as less than
–55 dBm in any 100 kHz bandwidth. The measured spurious emissions within this frequency band are shown in
Figure 85. The Si4455 chip complies with the specified level of spurious emissions within this sub-band.
Limit:
–55 dBm /100 kHz (max)
Measured: –90.85 dBm
Margin: 35.85 dB (PASS)
Figure 85. RX Conducted Spurious Emissions (930–1000 MHz)
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4.1.12. F > 1 GHz, using the +13 dBm schematic
The allowed level of spurious emissions at frequencies above 1000 MHz is specified as less than –47 dBm in any
1 MHz bandwidth. The measured spurious emissions within this frequency band are shown in Figure 86. The
Si4455 chip complies with the specified level of spurious emissions within this sub-band. The appearance of the
spur observed at around 3.7 GHz is due the coupling of the VCO signal to bond wires of the LNA input (i.e., RXp
and RXn). Here, this spur appears because of the weaker filtering in the direct-tie path compared with +10 dBm
case.
Limit:
–47 dBm /1 MHz (max)
Measured: –69.68 dBm
Margin: 22.68 dB (PASS)
Figure 86. RX Conducted Spurious Emissions (above 1 GHz)
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5. Reference Design Schematics
5.1. Antenna Power Optimized for +10 mW or Below
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5.2. Antenna Power Optimized for +20 mW
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DOCUMENT CHANGE LIST
Revision 0.1 to Revision 0.2
B0, B1, C0, C1, C2 were added in a bracket to
page 1.
 On page 1, 4455CPCE10D915M and
4455CPCE13D915M were added.
 Si4455-B1 was changed to Si4455 on several
pages.

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CONTACT INFORMATION
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Please visit the Silicon Labs Technical Support web page:
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and register to submit a technical support request.
Patent Notice
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