Datasheet - Torex Semiconductor

XC6130/XC6131Series
ETR02026-001
Watchdog Timeout Period Externally Adjustable Voltage Detector
■ GENERAL DESCRIPTION
The XC6130/XC6131 series are voltage detectors with a watchdog function. The watchdog timeout time and release delay
time can be set as desired using a single external capacitor. These voltage detectors are used for microprocessor monitoring,
and when the power voltage reaches the detect voltage or an L→H pulse is not input to the watchdog pin within the watchdog
timeout time, an L level signal is output from the RESETB pin.
The XC6130 series has a manual reset function. When the manual reset pin is set to Low level at any desired timing, an L level
signal is output from the RESETB pin.
The XC6131 series has a watchdog ON/OFF function. By setting the EN pin to L level, the watchdog function can be turned
OFF while the voltage detector that monitors the power voltage continues to operate.
The MRB pin and EN pin are pulled up internally to VIN, and thus these pins can be left open when not used.
■APPLICATIONS
■FEATURES
●Microprocessor reset and malfunction monitoring circuitry
●Memory battery backup circuits
●Power-on reset circuits
●Power failure detection
Operating Ambient Temperature : -40℃~+125℃
Operating Voltage Range
: 1.5V~6.0V
Detect Voltage Range
: 1.6V~5.0V (±1.0%)
Hysteresis Width
: VDFL×5%
Temperature Characteristics
: ±50ppm/℃
Output Configuration
: N-channel open drain output
Low Power Consumption
: 8.1μA Detect
9.8μA Release
2.5μA Release (EN=L)
Function
: Manual Reset (XC6130)
: Watchdog function OFF (XC6131)
WD Timeout Time
: 100ms (Cd=0.1μF)
Release Delay Time
: 100ms (Cd=0.1μF) (at power on)
10ms (Cd=0.1μF)
(After Watchdog Timeout)
Package
: SOT-26
Environmentally Friendly
: EU RoHS compliant, Pb free
■TYPICAL APPLICATION CIRCUIT ■TYPICAL PERFORMANCE
CHARACTERISTICS
XC6130 Series
Cd=0.01μF, WD=RESETB=OPEN, Ta=25℃
EN=VSS(WD Function OFF)
EN=VIN (WD Function ON)
XC6131A301MR-G
14
WD Function ON
WD Function OFF
XC6131 Series
Supply Current:ISS(μA)
12
10
8
6
4
2
0
0
1
2
3
4
Input Voltage:VIN(V)
5
6
* The above values do not include the current that flows to the EN pull-up resistance.
1/30
XC6130/XC6131 Series
■BLOCK DIAGRAM
●XC6130 Series Type A
VIN
RH
RX
+
RMR
RY
RESET
LOGIC
RESETB
Voltage
Reference
VSS
MRB
Cd
LOGIC
+
-
L→H PULSE
DETECT LOGIC
Voltage
Reference
RWD
WD
Cd
● XC6131 Series Type A
VIN
RH
RX
RY
RESET
LOGIC
+
RMR
Voltage
Reference
VSS
EN
Cd
LOGIC
+
L→H PULSE
DETECT LOGIC
Voltage
Reference
Cd
RWD
WD
* Diodes inside the circuit are an ESD protection diode and a parasitic diode.
2/30
RESETB
XC6130/XC6131
Series
■BLOCK DIAGRAM
● XC6131 Series Type B
VIN
RH
RX
+
RY
RESET
LOGIC
RESETB
Voltage
Reference
VSS
ENB
Cd
LOGIC
RENB
+
L→H PULSE
DETECT LOGIC
Voltage
Reference
Cd
RWD
WD
* Diodes inside the circuit are an ESD protection diode and a parasitic diode.
3/30
XC6130/XC6131 Series
■PRODUCT CLASSIFICATION
●Ordering Information
XC6130①②③④⑤⑥-⑦
DESIGNATOR
①
②③
④
⑤⑥-⑦
(*1)
(*1)
ITEM
SYMBOL
TYPE
Detect Voltage
Detect Accuracy
Package (Order Unit)
A
16~50
1
MR-G
DESCRIPTION
MRB pin With pull-up resistor
e.g. 1.6V → ②=1, ③=6
±1.0%
SOT-26 (3000/Reel)
The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
XC6131①②③④⑤⑥-⑦
DESIGNATOR
ITEM
①
TYPE
②③
④
⑤⑥-⑦
(*1)
(*1)
Detect Voltage
Detect Accuracy
Package (Order Unit)
SYMBOL
A
B
16~50
1
MR-G
DESCRIPTION
EN pin With pull up resistor
ENB pin With pull down resistor
e.g. 1.6V → ②=1, ③=6
±1.0%
SOT-26 (3000/Reel)
The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
4/30
XC6130/XC6131
Series
■PIN CONFIGURATION
XC6130 series
XC6131 series
■PIN ASSIGNMENT
XC6130 Series
PIN NUMBER
PIN NAME
FUNCTIONS
1
WD
Watchdog Input
2
MRB
Manual Reset Input
3
VIN
Power Input
4
RESETB
Reset Output
5
VSS
Ground
6
Cd
Adjustable Pin for Release Delay
Time/Watchdog Timeout
PIN NAME
FUNCTIONS
WD
Watchdog Input
EN
Watchdog ON/OFF Control (XC6131A)
ENB
Watchdog ON/OFF Control (XC6131B)
SOT-26
XC6131 Series
PIN NUMBER
SOT-26
1
2
3
VIN
Power Input
4
RESETB
Reset Output
5
VSS
Ground
6
Cd
Adjustable Pin for Release Delay
Time/Watchdog Timeout
5/30
XC6130/XC6131 Series
■FUNCTION CHART
1) XC6130 Series
VIN *2
VMRB *3
VWD *6
VRESETB *7
H
H
H
L
OPEN
L⇔H
H
L
L
L
L⇔H
H
L
*1
H
L
L
2) XC6131A Series
VIN *2
VEN *4
VWD *6
VRESETB *7
H
H
H
L
OPEN
L⇔ H
H
L
L
L
L⇔ H
H
H
*1
H
L
L
3) XC6131B Series
VIN *2
VENB *5
VWD *6
VRESETB *7
H
H
L
L
OPEN
L⇔ H
H
L
H
L
L⇔ H
H
H
*1
H
L
L
*1: Includes all WD logic (VWD=H, L, OPEN, H→L, L→H)
*2: VIN=H indicates higher than the release voltage.
VIN=L indicates lower than the detect voltage.
*3: VMRB=H indicates MRB High Level Voltage.
VMRB=L indicates MRB Low Level Voltage.
Since MRB pin of XC6130 Series is pulled up internally, the open condition of MRB pin is acceptable when MR function is not required.
*4: VEN=H indicates EN High Level Voltage.
VEN=L indicates EN Low Level Voltage.
The EN pin of the XC6131A Series is pulled up internally, enabling the WD function to be used with EN open.
*5: VENB=H indicates ENB High Level Voltage.
VENB=L indicates ENB Low Level Voltage.
The ENB pin of the XC6131B Series is pulled down internally, enabling the WD function to be used with ENB open.
*6: VWD=H indicates WD High Level Voltage.
VWD=L indicates WD Low Level Voltage.
*7: VRESETB=H indicates the release state.
VRESETB=L indicates the detect state.
6/30
XC6130/XC6131
Series
■ ABSOLUTE MAXIMUM RATINGS
Ta=25℃
XC6130 Series
PARAMETER
SYMBOL
RATINGS
UNITS
Input Voltage
VIN
-0.3~+7.0
V
WD Input Voltage
VWD
-0.3~+7.0
V
MRB Input Voltage
VMRB
-0.3~+7.0
V
(*1)
V
Cd Pin Voltage
VCd
Output Voltage
VRESETB
-0.3~+7.0
V
Cd Pin Current
ICd
10
mA
Output Current
IOUT
30
mA
Power Dissipation
SOT-26
-0.3~+VIN+0.3 or +7.0
Pd
250
mW
Operating Ambient
Temperature
Topr
-40~+125
℃
Storage Temperature
Tstg
-55~+125
℃
All voltages are described based on the VSS pin.
(*1)
The maximum value should be VIN+0.3 or +7.0 in the lowest.
Ta=25℃
XC6131 Series
PARAMETER
SYMBOL
RATINGS
UNITS
Input Voltage
VIN
-0.3~+7.0
V
WD Input Voltage
VWD
-0.3~+7.0
V
EN/ENB Input Voltage
VEN/VENB
-0.3~+7.0
V
(*1)
V
Cd Pin Voltage
VCd
Output Voltage
VRESETB
-0.3~+7.0
V
Cd Pin Current
ICd
10
mA
Output Current
IOUT
30
mA
Pd
250
mW
Operating Ambient
Temperature
Topr
-40~+125
℃
Storage Temperature
Tstg
-55~+125
℃
Power Dissipation
SOT-26
-0.3~+VIN+0.3 or +7.0
All voltages are described based on the VSS pin.
(*1)
The maximum value should be VIN+0.3 or +7.0 in the lowest.
7/30
XC6130/XC6131 Series
■ELECTRICAL CHARACTERISTICS
XC6130 Series
PARAMETER
SYMBOL
Operating Voltage
VIN
Detect Voltage
VDFL
Temperature
∆VDFL/
Characteristics
(∆Topr・VDFL)
Hysteresis
Ta=25℃
CONDITIONS
VDF(T)
(*1)
Supply Current
Iss
=1.6~5.0V
IRBOUT
1.5
-
×0.99
VDF(T)
MAX.
MIN.
TYP.
-
6.0
1.5
VDF(T)
VDF(T)
×1.01
×0.975
-
-
VDF(T)
(*9)
MAX.
6.0
VDF(T)
×1.025
UNITS
V
V
±50
±50
-
VDFL
VDFL
VDFL
VDFL
VDFL
VDFL
×0.04
×0.05
×0.06
×0.03
×0.05
×0.07
VIN=VDF(T) ×0.9V
-
8.1
12.1
-
8.1
14.0
VIN=VDF(T) ×1.1V
-
9.8
12.6
-
9.8
13.6
N-ch.
VRESETB=0.3V
2.6
3.5
-
1.4
3.5
-
VIN=2.0V
(*2)
4.9
6.0
-
3.0
6.0
-
VIN=3.0V
(*3)
9.2
10.3
-
5.8
10.3
-
VIN=4.0V
(*4)
12.3
13.8
-
7.7
13.8
-
-
0.01
0.1
-
0.01
1
V
μA
②
mA
③
μA
④
ILeak
Cd Pin Sink Current
Icd
VIN=1.5V, VCd=0.7V
530
770
-
295
770
-
tDR1
VIN=1.5V→VDF(T)×1.1V, Cd=0.01μF
8.5
10.0
11.5
7
10.0
12
tDR2
VIN=VDF(T)×1.1V, Cd=0.01μF
0.85
1.0
1.15
0.7
1.0
1.2
8.5
10.0
11.5
7
10.0
12
-
10.0
50
-
10.0
100
μs
100
-
-
100
-
-
ns
Time1
(*5)
Release Delay
Time2
(*6)
Watchdog Timeout
(*7)
Period
(*8)
Detect Delay Time
tWD
tDF
Watchdog
Minimum
Watchdog
Watchdog
Low Level Voltage
Watchdog
Pull-down Resistance
MRB High Level
Voltage
MRB Low Level
Voltage
MRB Pull-up
Resistance
MRB Minimum
Pulse Width
VIN=VDF(T)×1.1V,
Cd=0.01μF,WD=VSS
VIN=VDF(T)×1.1V→1.5V, Cd=0.01μF
ms
⑤
VIN=6.0V,
tWDIN
Pulse Width
High Level Voltage
VIN=6.0V,VRESETB=6.0
ppm /℃
Leak Current
Release Delay
CIRCUIT
①
-
-40℃≦Topr≦125℃
VIN=1.5V
Output Current
TYP.
VDF(T)
VHYS
Width
MIN.
-40℃≦Ta≦125℃
Apply pulse from 6.0V to 0V
to the WD pin.
⑥
VWDH
VIN=VDF(T)×1.1V→6.0V
VIN×0.7
-
6
VIN×0.7
-
6
V
VWDL
VIN=VDF(T)×1.1V→6.0V
0
-
VIN×0.3
0
-
VIN×0.3
V
RWD
VWD=6.0V, RWD=VWD/IWD
280
550
1100
220
550
1350
kΩ
1.3
-
VIN
1.3
-
VIN
V
0
-
0.45
0
-
0.45
V
300
800
1200
230
800
1420
kΩ
⑨
1.0
-
-
1.0
-
-
μs
⑩
VMRH
VIN=VDF(T)×1.1V~6.0V
VMRL
RMR
VIN=6.0V,
VMRB=0V, RMR=VIN/IMRB
⑦
⑧
VIN=6.0V,
tMRIN
Apply pulse from 6.0V to 0V
to the MRB pin.
NOTE:
*The WD pin and MRB pin are open unless otherwise specified in the measurement conditions.
(*1)
VDF(T): Nominal detect voltage
(*2)
For VDF(T)>2.0V products only.
(*3)
For VDF(T)>3.0V products only.
(*4) For VDF(T)>4.0V products only.
(*5) Until time when RESETB pin shows release status after VIN reached the release voltage.
Release voltage (VDR) = Detect voltage (VDFL) + Hysteresis width (VHYS)
(*6) The time to change the status of RESETB pin from the detect-status after the watchdog-timeout happens with the condition of WD=VSS.
(*7) The time to change the status of RESETB pin from the release-status to the detect-status with the condition of WD=VSS.
(*8) When VIN is changed during watchdog timeout time, until time when RESETB pin shows detect status after VIN reached the detect voltage.
(*9) The ambient temperature range (-40℃≦Ta≦125℃) is design Value.
8/30
XC6130/XC6131
Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC6131A Series
PARAMETER
SYMBOL
Operating Voltage
VIN
Detect Voltage
VDFL
Temperature
∆VDFL/
Characteristics
(∆Topr・VDFL)
Hysteresis
Width
Ta=25℃
CONDITIONS
VDF(T)
(*1)
VHYS
Iss
(*2)
VIN=VDF(T)×1.1V
EN=L
EN=H
IRBOUT
N-ch.
VRESETB=0.3V
MIN.
TYP.
MAX.
1.5
-
6.0
1.5
-
6.0
VDF(T)
±50
VDF(T)
VDF(T)
×1.01
×0.975
-
-
VDF(T)
±50
VDF(T)
×1.025
-
VDFL
VDFL
VDFL
VDFL
VDFL
VDFL
×0.04
×0.05
×0.06
×0.03
×0.05
×0.07
-
8.1
12.1
-
8.1
14.0
-
2.5
3.5
-
2.5
5.0
-
9.8
12.6
-
9.8
13.6
2.6
3.5
-
1.4
3.5
-
VIN=2.0V
(*2)
4.9
6.0
-
3.0
6.0
-
VIN=3.0V
(*3)
9.2
10.3
-
5.8
10.3
-
VIN=4.0V
(*4)
12.3
13.8
-
7.7
13.8
-
VIN=1.5V
Output Current
MAX.
-
VIN=VDF(T) ×0.9V
Supply Current
TYP.
×0.99
-40℃≦Topr≦125℃
(*10)
MIN.
VDF(T)
=1.6~5.0V
-40℃≦Ta≦125℃
V
ppm /℃
μA
②
mA
③
μA
④
ILeak
-
0.01
0.1
-
0.01
Icd
VIN=1.5V, VCd=0.7V
530
770
-
295
770
-
tDR1
VIN=1.5V→VDF(T)×1.1V, Cd=0.01μF
8.5
10.0
11.5
7
10.0
12
tDR2
VIN=VDF(T)×1.1V, Cd=0.01μF
0.85
1.0
1.15
0.7
1.0
1.2
8.5
10.0
11.5
7
10.0
12
-
10.0
50
-
10.0
100
μs
100
-
-
100
-
-
ns
(*6)
Release Delay
Time2
(*7)
Watchdog Timeout
(*8)
Period
Detect Delay
Time
(*9)
tWD
VIN=VDF(T)×1.1V→1.5V, Cd=0.01μF
tWDIN
Apply pulse from 6.0V to 0V
Watchdog
Watchdog
Low Level Voltage
ms
⑤
VIN=6.0V,
Pulse Width
High Level Voltage
Cd=0.01μF, WD=VSS
tDF
Watchdog
Minimum
VIN=VDF(T)×1.1V,
①
V
Leakage Current
Time1
CIRCUIT
V
Cd Pin Sink Current
Release Delay
VIN=6.0V, VRESETB=6.0V
UNITS
to the WD pin.
⑥
VWDH
VDF(T)×1.1V≦VIN≦6.0V
VIN×0.7
-
6
VIN×0.7
-
6
V
VWDL
VDF(T)×1.1V≦VIN≦6.0V
0
-
VIN×0.3
0
-
VIN×0.3
V
RWD
VWD=6.0V, RWD=VWD/IWD
280
550
1100
220
550
1350
kΩ
⑦
1.3
-
VIN
1.3
-
VIN
V
⑧
Watchdog
Pull-down
Resistance
EN High Level Voltage
VENH
EN Low Level Voltage
VENL
EN Pull-up Resistance
REN
VIN=VDF(T)×1.1V~6.0V
VIN=6.0V, VEN=0V, REN=VIN/IEN
0
-
0.45
0
-
0.45
V
300
800
1200
230
800
1420
kΩ
⑨
NOTE:
* The WD pin and EN pin are open unless otherwise specified in the measurement conditions.
(*1)
VDF(T): Nominal detect voltage
(*2)
Excludes the current that flows to EN pull-up resistance when EN = L.
(*3)
For VDF(T)>2.0V products only.
(*4)
For VDF(T)>3.0V products only.
(*5)
For VDF(T)>4.0V products only.
(*6)
Until time when RESETB pin shows release status after VIN reached the release voltage.
Release voltage (VDR) = Detect voltage (VDFL) + Hysteresis width (VHYS)
(*7)
The time to change the status of RESETB pin from the detect-status after the watchdog-timeout happens with the condition of WD=VSS.
(*8)
The time to change the status of RESETB pin from the release-status to the detect-status with the condition of WD=VSS.
(*9)
When VIN is changed during watchdog timeout time, until time when RESETB pin shows detect status after VIN reached the detect voltage.
(*10)
The ambient temperature range (-40℃≦Ta≦125℃) is design Value.
9/30
XC6130/XC6131 Series
■ELECTRICAL CHARACTERISTICS (Continued)
XC6131B Series
PARAMETER
SYMBOL
Operating Voltage
VIN
Detect Voltage
VDFL
Temperature
∆VDFL/
Characteristics
(∆Topr・VDFL)
Hysteresis Width
VHYS
Ta=25℃
CONDITIONS
VDF(T)
(*1)
Iss
=1.6~5.0V
IRBOUT
N-ch.
VRESETB=0.3V
-
-
ENB=H
(*2)
ENB=L
VIN=1.5V
Output Current
1.5
×0.99
-40℃≦Topr≦125℃
VIN=VDF(T)×1.1V
TYP.
VDF(T)
VIN=VDF(T) ×0.9V
Supply Current
MIN.
VDF(T)
±50
-40℃≦Ta≦125℃
MAX.
MIN.
TYP.
-
6.0
1.5
VDF(T)
VDF(T)
×1.01
×0.975
-
-
VDF(T)
±50
(*10)
MAX.
6.0
VDF(T)
×1.025
-
VDFL
VDFL
VDFL
VDFL
VDFL
VDFL
×0.04
×0.05
×0.06
×0.03
×0.05
×0.07
-
8.1
12.1
-
8.1
14.0
-
2.5
3.5
-
2.5
5.0
-
9.8
12.6
-
9.8
13.6
2.6
3.5
-
1.4
3.5
-
VIN=2.0V
(*2)
4.9
6.0
-
3.0
6.0
-
VIN=3.0V
(*3)
9.2
10.3
-
5.8
10.3
-
VIN=4.0V
(*4)
12.3
13.8
-
7.7
13.8
-
-
0.01
0.1
-
0.01
Leakage Current
ILeak
Cd Pin Sink Current
Icd
VIN=1.5V, VCd=0.7V
530
770
-
295
770
-
tDR1
VIN=1.5V→VDF(T)×1.1V, Cd=0.01μF
8.5
10.0
11.5
7
10.0
12
tDR2
VIN=VDF(T)×1.1V, Cd=0.01μF
0.85
1.0
1.15
0.7
1.0
1.2
Release Delay
Time1
(*6)
Release Delay
Time2
(*7)
Watchdog Timeout
(*8)
Period
Detect Delay
Time
(*9)
tWD
tDF
Watchdog
Minimum
Watchdog
Watchdog
Low Level Voltage
VIN=VDF(T)×1.1V,
Cd=0.01μF, WD=VSS
VIN=VDF(T)×1.1V→1.5V, Cd=0.01μF
CIRCUIT
V
V
ppm /℃
①
V
μA
②
mA
③
μA
④
ms
⑤
8.5
10.0
11.5
7
10.0
12
-
10.0
50
-
10.0
100
μs
100
-
-
100
-
-
ns
VIN=6.0V,
tWDIN
Pulse Width
High Level Voltage
VIN=6.0V, VRESETB=6.0V
UNITS
Apply pulse from 6.0V to 0V
to the WD pin.
⑥
VWDH
VDF(T)×1.1V≦VIN≦6.0V
VIN×0.7
-
6
VIN×0.7
-
6
V
VWDL
VDF(T)×1.1V≦VIN≦6.0V
0
-
VIN×0.3
0
-
VIN×0.3
V
RWD
VWD=6.0V, RWD=VWD/IWD
280
550
1100
220
550
1350
kΩ
⑦
1.3
-
VIN
1.3
-
VIN
V
⑧
0
-
0.45
0
-
0.45
V
300
800
1200
230
800
1420
kΩ
Watchdog
Pull-down
Resistance
ENB High Level Voltage
VENBH
ENB Low Level Voltage
VENBL
ENB Pull-down
Resistance
RENB
VIN=VDF(T)×1.1V~6.0V
VENB=6.0V, RENB=VENB/IENB
NOTE:
*The WD pin and ENB pin are open unless otherwise specified in the measurement conditions.
(*1)
VDF(T): Nominal detect voltage
(*2)
Excludes the current that flows to the EN pull-down resistance when ENB = H.
(*3)
For VDF(T)>2.0V products only.
(*4)
For VDF(T)>3.0V products only.
(*5)
For VDF(T)>4.0V products only.
(*6)
Until time when RESETB pin shows release status after VIN reached the release voltage.
Release voltage (VDR) = Detect voltage (VDFL) + Hysteresis width (VHYS)
(*7)
The time to change the status of RESETB pin from the detect-status after the watchdog-timeout happens with the condition of WD=VSS.
(*8)
The time to change the status of RESETB pin from the release-status to the detect-status with the condition of WD=VSS.
(*9)
When VIN is changed during watchdog timeout time, until time when RESETB pin shows detect status after VIN reached the detect voltage.
(*10)
The ambient temperature range (-40℃≦Ta≦125℃) is design Value.
10/30
⑨
XC6130/XC6131
Series
■ TEST CIRCUITS
CIRCUIT①
CIRCUIT②
CIRCUIT③
CIRCUIT④
CIRCUIT⑤
VIN
100kΩ
MRB/EN/ENB
RESETB
Cd
WD
VSS
Waveform
Measure
Point
11/30
XC6130/XC6131 Series
■ TEST CIRCUITS (Continued)
CIRCUIT⑥
VIN
100kΩ
MRB/EN/ENB
RESETB
Cd
WD
Waveform
Measure
Point
VSS
tWDIN
WD
VIN×0.7
VIN×0.3
RESETB
(VDFL)
tDR2
tWD
CIRCUIT⑦
CIRCUIT⑧
CIRCUIT⑨
IMRB
IEN
IENB
VIN
A
MRB/EN/ENB
RESETB
Cd
WD
VSS
CIRCUIT⑩
tMRIN
MRB
MRB
VIN
RESETB
Cd
WD
12/30
100kΩ
VSS
Waveform
Measure
Point
RESETB
(VDFL)
tDR2
tDR2
XC6130/XC6131
Series
■OPERATIONAL EXPLANATION
In the XC6130/XC6131 Series, the voltage divided by RH, RX, and RY connected to the VIN pin is compared to the internal reference
voltage by the comparator, and the resulting output signal drives the watchdog logic and output driver. The VIN pin voltage is gradually
lowered, and when the VIN pin voltage reaches the detect voltage, H→L level signal is output to the reset output pin (VDFL type).
VIN
RH
RX
+
RMR
RY
RESET
LOGIC
RESETB
Voltage
Reference
VSS
MRB
Cd
LOGIC
+
-
L→H PULSE
DETECT LOGIC
Voltage
Reference
RWD
WD
Cd
XC6130 Series
<Output signal of reset output pin>
If the VIN pin voltage is below the detect voltage, the reset output pin outputs H→L level signal.
After the VIN pin voltage reaches the release voltage, the reset output pin holds L level during release delay time1 (tDR1). If a start signal is
not input to the WD pin within the watchdog timeout time, the reset output pin holds L level during release delay time 2 (tDR2) and then
outputs H level signal.
<Hysteresis>
If the internal comparator outputs L level signal, the PMOS transistor connected in parallel to RH turns ON and the hysteresis circuit
activates. The hysteresis voltage width is obtained from the difference between the detect voltage and the release voltage.
The hysteresis width is (VDFL×0.05) V (TYP.).
<WD pin>
A watchdog timer is used to detect abnormal operation and runaway in a microprocessor. If “L→H” signal is not input from the
microprocessor within the watchdog timeout time, the reset output pin holds the detect state during release delay time 2 (tDR2), and then L →
H level signal is output to the reset output pin.
In addition, the watchdog pin is pulled down internally to VSS, and when the watchdog pin is OPEN, a reset signal is output after the
watchdog timeout time.
The watchdog timeout time (tWD) can be set using the equation below.
6
tWD=Cd×10
-6
6
Example: When Cd is 0.1μF, tWD=0.1×10 ×10 = 100ms (TYP.)
13/30
XC6130/XC6131 Series
■OPERATIONAL EXPLANATION (Continued)
<Release delay time 1>
When power is added on the VIN, the time from the point that VIN reaches the release voltage until the reset output pin reaches the release
voltage is release delay time 1 (tDR1).
Release delay time 1 (tDR1) can be set using the equation below.
tDR1=Cd×10
6
-6
6
Example: When Cd is 0.1μF, tDR1= 0.1×10 ×10 =100ms (TYP.)
<Release delay time 2>
Release delay time 2 (tDR2) is the duration of the detect state until the watchdog timer restarts when “L → H” signal is not input to the WD pin
within the watchdog timeout time.
Release delay time 2 (tDR2) can be set using the equation below.
tDR2=Cd×10
5
-6
5
Example: When Cd is 0.1μF, tDR2=0.1×10 ×10 =10ms (TYP.)
<Detect delay time>
The detect delay time (tDF) is the time until the VIN pin voltage drops to the detect voltage and the reset output pin enters the detect state.
<MRB pin> *XC6130 Series
The MRB pin voltage can be input to force the signal of the reset output pin to the detect state.
When the MRB pin voltage input reaches an H→L level signal, an H→L level signal is output to the reset output pin. After the MRB pin voltage
reaches L→H level, the reset output pin holds the detect state during release delay time 1(tDR1).
<EN pin>
*XC6131A Series
If the watchdog function will not be used, the EN pin can be set to L level to forcibly stop only the watchdog function and keep the voltage
detector operating. When using the watchdog function, use the EN pin at H level. If the input voltage and EN pin voltage reach L→H level,
the reset output pin holds the detect state during release delay time 1 (tDR1). (Refer to Timing Chart 2, ①)
If the input voltage is higher than the release voltage and the EN pin voltage reaches L→H level, the watchdog function recovers. (Refer to
Timing Chart 2, ②)
<ENB Pin> *XC6131B Series
When the watchdog function is not used, the ENB pin can be set to H level to keep the voltage detector operating and forcibly stop only the
watchdog function. To use the watchdog function, use the ENB pin at L level. When the input voltage and ENB pin voltage reach H→L level,
the reset output pin holds the detect state during release delay time 1 (tDR1). (Refer to Timing Chart 3, ①)
When the input voltage is higher than the release voltage and the ENB pin voltage reaches H→L level, the watchdog function recovers. (Refer
to Timing Chart 3, ②)
14/30
XC6130/XC6131
Series
■OPERATIONAL EXPLANATION (Continued)
<Timing Chart 1>
XC6130 Series
15/30
XC6130/XC6131 Series
■OPERATIONAL EXPLANATION (Continued)
<Timing Chart 2>
XC6131A Series
VIN
VDR Level
VDF Level
VIN Pin Wave Form
Hysterisis Range
Min.Operating Voltage
GND
EN Pin Wave Form
EN
GND
tWD>tWDIN
WD
WD Pin Wave Form
tWD
tWD
tWD
tWD
GND
Cd Pin Wave Form
Cd HIGH Level
Cd Low Level
GND
RESETB Pin Wave Form
VDR Level
VDF Level
Min.Operating Voltage
GND
Unstable
tDR1
①
16/30
tDR2
tDR2
tDR2
②
XC6130/XC6131
Series
■OPERATIONAL EXPLANATION(Continued)
<Timing Chart 3>
XC6131B Series
VIN
VDR Level
VDF Level
VIN Pin Wave Form
Hysterisis Range
Min.Operating Voltage
GND
ENB
ENB Pin Wave Form
GND
tWD>tWDIN
WD
WD Pin Wave Form
tWD
tWD
tWD
tWD
GND
Cd Pin Wave Form
Cd HIGH Level
Cd Low Level
GND
RESETB Pin Wave Form
VDR Level
VDF Level
Min.Operating Voltage
GND
Unstable
tDR1
①
tDR2
tDR2
tDR2
②
17/30
XC6130/XC6131 Series
■NOTES ON USE
1. Use this IC within the absolute maximum ratings. Risk of deterioration or damage if the absolute maximum ratings are exceeded during
temporary or transient voltage drops or voltage jumps.
2. If a resistance is added between the power and the VIN pin, the flowthrough current when the IC operates will cause the VIN pin voltage to
drop and the IC may malfunction.
3. When raising the input voltage from the minimum operating voltage or less, if changed suddenly, the release delay time may become short.
4. Sufficiently reinforce the VIN and GND lines, as power noise may cause malfunctioning of the watchdog function and voltage detector. It is
recommended that a capacitor be added between VIN and GND.
5. Enter “H” level, or “L” level should be fed to MRB and EN/ENB pin.
6. To ensure stable operation of the watchdog function, be sure to add a capacitor at the Cd pin.
The release delay time and watchdog timeout time are affected by the accuracy and temperature characteristics of the Cd pin capacitor.
7. If the Cd pin capacitor is unable to discharge to the ground level during recovery after a power interruption, the release delay may become
noticeably shorter. Exercise caution.
8. The output voltage at detection is determined by the pull-up resistance connected to RESETB pin.
Select the resistance based on the following considerations:
At detection: VRESETB=(Vpull-Up)/(1+Rpull/RON)
Vpull-Up: Voltage after pull-up
(*1)
(*3)
RON : ON resistance of N-ch driver (calculated from VRESETB/IRBOUT1 in electrical characteristics)
Example calculation:
(*2)
-3
When VIN=2.0V , RON=0.3/6.7×10 ≒44.8Ω(MAX.). If you wish to make the VRESETB voltage at detection 0.1V
or lower with Vpull-Up=3.0V,
Rpull=(Vpull-Up /VRESETB-1)×RON=(3/0.1-1)×44.8≒1.3kΩ,
and thus to make the output voltage at detection 0.1V or less under the above conditions, the pull-up resistance must be 1.3kΩ or higher.
(*1)
The smaller VIN is, the larger RON becomes.
When selecting VIN, calculate using the lowest value of the input voltage range you will use.
(*3)
IRBOUT1 specified in the electrical characteristics is the value at Ta=25℃. IRBOUT1 varies depending on the ambient temperature.
To select the pull-up resistance taking ambient temperature into account, please calculate IRBOUT with the MIN. value of the ambient
temperature range of -40℃≦Ta≦125℃.
(*2)
At release: VRESETB = (Vpull-Up)/(1+Rpull/ROFF)
Vpull-Up: Voltage after pull-up
ROFF: Resistance value 60MΩ(MIN.)
when N-ch driver is OFF (calculated from VRESETB/ILEAK in electrical characteristics)
Calculation example:
If you wish to make VRESETB 5.99V or higher with Vpull-Up=6.0V
6
Rpull=(Vpull-Up/VRESETB-1)×ROFF=(6/5.99-1)×60×10 ≒100kΩ,
and thus to make the output voltage 5.99V or higher at release under the above conditions, the pull-up resistance must be 100kΩ or less.
9. We place importance on improving our products and increasing reliability. However, please design safety into the device and system,
including fail-safe design and post-aging treatment.
18/30
XC6130/XC6131
Series
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Detect, Release Voltage vs. Ambient Temperature
XC6130,XC6131 (V DF(T )=1.6V)
XC6130,XC6131 (V DF(T )=3.0V)
3.20
Detect, Release Voltage : VDFL, V DR (V)
Detect, Release Voltage : VDFL, V DR (V)
1.700
1.675
VDR
1.650
1.625
1.600
VDFL
1.575
1.550
3.15
VDR
3.10
3.05
3.00
VDFL
2.95
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Ambient Temperature : Ta ( ℃)
Ambient Temperature : Ta (℃)
(2) Detect, Release Voltage vs. Input Voltage
XC6130,XC6131 (V DF(T )=5.0V)
XC6130,XC6131 (V DF(T )=1.6V)
Rpull-up=100kΩ
6
5.25
OutPut Voltage : VRESETB (V)
Detect, Release Voltage : VDFL, V DR (V)
5.30
VDR
5.20
5.15
5.10
5.05
5.00
↓ : V DF側
↑ : V DR側
5
4
Ta=-40℃
3
Ta=25℃
Ta=85℃
2
Ta=125℃
1
VDFL
0
4.95
-50
-25
0
25
50
75
100
125
0
150
1
2
3
XC6130,XC6131 (V DF(T )=3.0V)
Rpull-up=100kΩ
6
↓ : V DF側
↑ : V DR側
4
Ta=-40℃
3
Ta=25℃
Ta=85℃
2
Ta=125℃
1
Rpull-up=100kΩ
6
Output Voltage : V RESETB (V)
Output Voltage : V RESETB (V)
5
XC6130,XC6131 (V DF(T )=5.0V)
6
5
4
Input Voltage : V IN (V)
Ambient Temperature : Ta ( ℃)
↓ : V DF側
↑ : V DR側
5
4
3
Ta=-40℃
Ta=25℃
2
Ta=85℃
1
Ta=125℃
0
0
0
1
2
3
Input Voltage : V IN (V)
4
5
6
0
1
2
3
4
5
6
Input Voltage : V IN (V)
19/30
XC6130/XC6131 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Supply Current vs. Input Voltage
XC6130 (V DF(T)=1.6V)
XC6130 (V DF(T )=3.0V)
20
20
18
Ta=25℃
14
Ta=85℃
12
Ta=125℃
Supply Current : ISS (μA)
Supply Current : ISS (μA)
18
Ta=-40℃
16
10
8
6
4
Ta=-40℃
16
Ta=25℃
14
Ta=85℃
12
Ta=125℃
10
8
6
4
2
2
0
0
0
1
2
3
4
5
6
0
1
2
4
18
Ta=25℃
14
Ta=85℃
12
Ta=125℃
Supply Current : ISS (μA)
Ta=-40℃
16
10
8
6
-40℃
16
25℃
14
85℃
12
125℃
10
8
6
4
4
2
2
0
0
0
1
2
3
4
5
0
6
1
2
Input Voltage: V IN (V)
3
4
20
EN=V IN (XC6131A)
ENB=V SS (XC6131B)
20
Ta=-40℃
18
16
Ta=25℃
16
Ta=25℃
14
Ta=85℃
14
Ta=85℃
12
Ta=125℃
12
Ta=125℃
Supply Current : ISS (μA)
Supply Current : ISS (μA)
6
XC6131 (V DF(T)=5.0V)
EN=V IN (XC6131A)
ENB=V SS (XC6131B)
18
5
Input Voltage: V IN (V)
XC6131 (V DF(T )=3.0V)
10
8
6
4
2
Ta=-40℃
10
8
6
4
2
0
0
0
1
2
3
Input Voltage: V IN (V)
20/30
6
EN=V IN (XC6131A)
ENB=V SS (XC6131B)
20
20
18
5
XC6131 (V DF(T)=1.6V)
XC6130 (V DF(T)=5.0V)
Supply Current : ISS (μA)
3
Input Voltage: V IN (V)
Input Voltage: V IN (V)
4
5
6
0
1
2
3
Input Voltage: V IN (V)
4
5
6
XC6130/XC6131
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Supply Current vs. Input Voltage (Continued)
XC6131 (V DF(T )=3.0V)
XC6131 (V DF(T)=1.6V)
EN=V SS (XC6131A)
ENB=V IN (XC6131B)
10
Supply Current : ISS (μA)
10
Ta=-40℃
8
Ta=25℃
Supply Current : ISS (μA)
Ta=85℃
Ta=125℃
4
2
1
2
3
4
5
Ta=85℃
6
Ta=125℃
4
2
0
0
Ta=-40℃
8
Ta=25℃
6
EN=V SS (XC6131A)
ENB=V IN (XC6131B)
0
6
0
Input Voltage: V IN (V)
1
2
3
4
5
6
Input Voltage: V IN (V)
XC6131 (V DF(T)=5.0V)
EN=V SS (XC6131A)
ENB=V IN (XC6131B)
10
Supply Current : ISS (μA)
8
6
4
Ta=-40℃
Ta=25℃
Ta=85℃
2
Ta=125℃
0
0
1
2
3
4
5
6
Input Voltage: V IN (V)
(4) Output Current vs. VRESETB
(5) Output Current vs. Input Voltage
XC6130,XC6131
XC6130,XC6131
Ta=25℃
30
V IN=4.0V
25
Output Current : IRBOUT (mA)
25
Output Current : IRBOUT (mA)
V RESETB =0.3V
30
20
V IN=3.0V
15
10
V IN=2.0V
5
Ta=-40℃
Ta=25℃
20
Ta=85℃
Ta=125℃
15
10
5
V IN=1.5V
0
0
0.0
0.1
0.2
0.3
0.4
0.5
V RESETB (V)
0.6
0.7
0.8
0.9
1.0
0
1
2
3
4
5
Input Voltage : VIN (V)
21/30
XC6130/XC6131 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(6) Cd Sink Current vs. Ambient Temperature
XC6130,XC6131
V Cd=0.7V
Cd Pin Sink Current : cd
I (mA)
5
4
V IN=4.5V
3
2
V IN=1.5V
1
0
-50
-25
0
25
50
75
100
125
150
Ambient Temperature : Ta (℃)
(7) Release Delay Time1 vs. Ambient Temperature
XC6130,XC6131
XC6130,XC6131
V IN=1.5V →V DF×1.1
Cd=0.01μF
12
10
8
6
4
2
V IN=1.5V →V DF×1.1
Cd=0.1μF
140
Release delay Time1 : tDR1 (ms)
Release delay Time1 : tDR1 (ms)
14
0
120
100
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
Ambient Temperature : Ta ( ℃)
25
50
75
100
125
150
Ambient Temperature : Ta (℃)
(8) Release Delay Time2 vs. Ambient Temperature
XC6130,XC6131
XC6130,XC6131
V IN=V DF×1.1
Cd=0.01μF
1.2
1.0
0.8
0.6
0.4
0.2
0.0
V IN=V DF×1.1
Cd=0.1μF
14
Release delay Time2 : tDR2 (ms)
Release delay Time2 : tDR2 (ms)
1.4
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Ambient Temperature : Ta (℃)
22/30
100
125
150
-50
-25
0
25
50
75
Ambient Temperature : Ta ( ℃)
100
125
150
XC6130/XC6131
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Watchdog Timeout Period vs. Ambient Temperature
XC6130,XC6131
XC6130,XC6131
V IN=V DF×1.1
Cd=0.01μF
12
10
8
6
4
2
V IN=V DF×1.1
Cd=0.1μF
140
Watchdog Timeout Period : tWD (ms)
Watchdog Timeout Period : tWD (ms)
14
120
100
0
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
Ambient Temperature : Ta ( ℃)
(10) WD High Level Threshold Voltage vs. Ambient Temperature
75
100
125
150
(11) WD Low Level Threshold Voltage vs. Ambient Temperature
XC6130,XC6131
XC6130,XC6131
6.0
WD LowLevel Threshold Voltage : V WDL (V)
6.0
WD HighLevel Threshold Voltage : VWDH (V)
50
Ambient Temperature : Ta ( ℃)
5.0
4.0
V IN=6.0V
3.0
2.0
V IN=1.76V
1.0
0.0
5.0
4.0
V IN=6.0V
3.0
2.0
V IN=1.76V
1.0
0.0
-50
-25
0
25
50
75
Ambient Temperature : Ta (℃)
100
125
150
-50
-25
0
25
50
75
100
125
150
Ambient Temperature : Ta ( ℃)
23/30
XC6130/XC6131 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(12) MRB High Level Threshold Voltage vs. Ambient Temperature
(13) MRB Low Level Threshold Voltage vs. Ambient Temperature
XC6130A
XC6130A
1.2
MRB LowLevel Threshold Voltage : V MRL (V)
MRB HighLevel Threshold Voltage : VMRH (V)
1.2
1.1
V IN=6.0V
1.0
0.9
0.8
0.7
V IN=1.76V
0.6
0.5
1.1
1.0
0.9
V IN=6.0V
0.8
0.7
0.6
V IN=1.76V
0.5
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
Ambient Temperature : Ta ( ℃)
(14) EN High Level Threshold Voltage vs. Ambient Temperature
100
125
150
XC6131A
1.2
EN LowLevel Threshold Voltage : V ENL (V)
1.2
EN HighLevel Threshold Voltage : VENH (V)
75
(15) EN Low Level Threshold Voltage vs. Ambient Temperature
XC6131A
1.1
V IN=6.0V
1.0
0.9
0.8
V IN=1.76V
0.7
0.6
0.5
1.1
1.0
0.9
V IN=6.0V
0.8
0.7
0.6
V IN=1.76V
0.5
-50
-25
0
25
50
75
100
125
-50
150
-25
0
25
50
75
100
125
150
Ambient Temperature : Ta ( ℃)
Ambient Temperature : Ta ( ℃)
(16) ENB High Level Threshold Voltage vs. Ambient Temperature
(17) ENB Low Level Threshold Voltage vs. Ambient Temperature
XC6131B
XC6131B
1.2
ENB LowLevel Threshold Voltage : V ENBL (V)
1.2
ENB HighLevel Threshold Voltage : VENBH (V)
50
Ambient Temperature : Ta ( ℃)
1.1
V IN=6.0V
1.0
0.9
0.8
V IN=1.76V
0.7
0.6
0.5
1.1
1.0
0.9
V IN=6.0V
0.8
0.7
0.6
V IN=1.76V
0.5
-50
-25
0
25
50
75
Ambient Temperature : Ta ( ℃)
24/30
100
125
150
-50
-25
0
25
50
75
Ambient Temperature : Ta ( ℃)
100
125
150
XC6130/XC6131
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(18) MRB Pull-up Resistance vs. Ambient Temperature
(19) EN Pull-up Resistance vs. Ambient Temperature
XC6131A
1000
1000
900
900
EN Pull-up Resistance : REN (kΩ)
MRB Pull-up Resistance : RMR (kΩ)
XC6130A
800
700
600
500
400
800
700
600
500
400
300
300
-50
-25
0
25
50
75
100
125
-50
150
-25
0
(20) ENB Pull-down Resistance vs. Ambient Temperature
50
75
100
125
150
(21) WD Pull-up Resistance vs. Ambient Temperature
XC6131B
XC6130,XC6131
1000
1000
900
900
WD Pull-down Resistance : RWD (kΩ)
ENB Pull-up Resistance : RENB (kΩ)
25
Ambient Temperature : Ta (℃)
Ambient Temperature : Ta (℃)
800
700
600
500
400
300
800
700
600
500
400
300
-50
-25
0
25
50
75
Ambient Temperature : Ta (℃)
100
125
150
-50
-25
0
25
50
75
100
125
150
Ambient Temperature : Ta (℃)
25/30
XC6130/XC6131 Series
■PACKAGING INFORMATION
●SOT-26 (unit: mm)
2.9±0.2
+0.1
0.4 -0.05
+0.1
0.4 -0.05
6
5
4
0~0.1
1234
1
2
(0.95)
3
(0.95)
+0.1
0.15 -0.05
1.0
2.4
●SOT-26 Reference Pattern Layout (unit: mm)
26/30
XC6130/XC6131
Series
■PACKAGING INFORMATION (Continued)
●SOT-26 Power Dissipation (Toprmax+125℃)
Power dissipation data for the SOT-26 is shown in this page.
The value of power dissipation varies with the mount board conditions.
Please use this data as the reference data taken in the following condition.
1. Measurement Condition
40.0
Condition:
Mount on a board
Ambient:
Natural convection
Soldering:
Board:
28.9
Lead (Pb) free
2
Dimensions 40 x 40 mm (1600 mm in one side)
Copper (Cu) traces occupy 50% of the board area
Through-hole
Glass Epoxy (FR-4)
1.6mm
4 x 0.8 Diameter
2.54
1.4
2.5
Material:
Thickness:
40.0
28.9
In top and back faces
(Board of SOT-26 is used)
Evaluation Board (Unit: mm)
2. Power Dissipation vs. Ambient Temperature
Board Mount (Tjmax=125℃)
Ambient Temperature (℃)
Power Dissipation Pd (mW)
25
600
85
240
Thermal Resistance (℃/W)
166.67
Power Dissipation : Pd(mW)
Pd vs Ta (Ta=125℃)
700
600
500
400
300
200
100
0
25
45
65
85
105
Ambient Temperature : Ta(℃)
125
27/30
XC6130/XC6131 Series
■MARKING RULE
●XC6130
① represents products series
SOT-26
6
①
1
5
②
③
2
4
④
⑤
3
MARK
PRODUCT SERIES
4
XC6130******-G
② represents type of detector and detect voltage
MARK
DETECT VOLTAGE (V)
1
1.6~2.0
2
2.1~3.0
3
3.1~4.0
4
4.1~5.0
PRODUCT TYPE
PRODUCT SERIES
A
XC6130A*****-G
③ represents detect voltage
MARK
DETECT VOLTAGE (V)
MARK
DETECT VOLTAGE (V)
1
2
x.1
x.2
6
7
x.6
x.7
3
x.3
8
x.8
4
x.4
9
x.9
5
x.5
0
x.0
④⑤ represents production lot number
01~09, 0A~0Z, 11~9Z, A1~A9, AA~AZ, B1~ZZ in order.
(G, I, J, O, Q, W excluded)
* No character inversion used.
28/30
XC6130/XC6131
Series
■MARKING RULE (Continued)
●XC6131
① represents products series
SOT-26
6
①
1
5
②
③
2
4
④
⑤
3
MARK
PRODUCT SERIES
4
XC6131******-G
② represents type of detector and detect voltage
MARK
DETECT VOLTAGE (V)
A
1.6~2.0
B
2.1~3.0
C
3.1~4.0
D
4.1~5.0
E
1.6~2.0
F
2.1~3.0
H
3.1~4.0
K
4.1~5.0
PRODUCT TYPE
PRODUCT SERIES
A
XC6131A*****-G
B
XC6131B*****-G
③ represents detect voltage
MARK
DETECT VOLTAGE (V)
MARK
DETECT VOLTAGE (V)
1
2
x.1
x.2
6
7
x.6
x.7
3
x.3
8
x.8
4
x.4
9
x.9
5
x.5
0
x.0
④⑤ represents production lot number
01~09, 0A~0Z, 11~9Z, A1~A9, AA~AZ, B1~ZZ in order.
(G, I, J, O, Q, W excluded)
* No character inversion used.
29/30
XC6130/XC6131 Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
30/30