PDF

16Mb: 3V Embedded Parallel NOR Flash
Features
Parallel NOR Flash Embedded Memory
M29W160ET, M29W160EB
Features
• Common Flash interface
– 64-bit security code
• Low power consumption: Standby and automatic
mode
• 100,000 PROGRAM/ERASE cycles per block
• Electronic signature
– Manufacturer code: 0020h
– Top device code M29W160ET: 22C4h
– Bottom device code M29W160EB: 2249h
• Packages
– 48-pin TSOP (N) 12mm x 20mm
– 48-ball TFBGA (ZA) 6mm x 8mm
– 64-ball FBGA (ZS) 11mm x 13mm
• Automotive grade parts available
• Supply voltage
– VCC = 2.7–3.6V (program, erase, read)
• Access times
– 70, 90ns
• Program time
– 10µs per byte/word (TYP)
• Memory organization
– 3 parameter and 31 main blocks
– 1 boot block (top or bottom location)
• Program/erase controller
– Embedded byte/word program algorithms
• Erase suspend and resume capability
– Read or program another block during an ERASE
SUSPEND operation
• UNLOCK BYPASS PROGRAM COMMAND
– Fast buffered/batch programming
• Temporary block unprotect mode
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
16Mb: 3V Embedded Parallel NOR Flash
Features
Part Numbering Information
Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages or speed, or for further information, contact your Micron sales representative. Part numbers can be verified at
www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products.
Contact the factory for devices not found.
Table 1: Part Number Information
Part Number
Category
Category Details
Device Type
M29 = Parallel Flash memory
Operating Voltage
W = 2.7 to 3.6V
Device function
160E = 16Mb memory array
Configuration
T = Top boot
B = Bottom boot
Speed
7A = 70ns
Package
Notes
1
70 = 70 ns
2
80 = 80ns
3
90 = 90ns
4
N = 48-pin TSOP, 12mm x 20mm
ZA = 48-ball TFBGA, 6mm x 8mm, 0.80mm pitch
ZS = 64-ball Fortified BGA, 11mm x 13mm, 1mm pitch
Temperature Range
6 = –40° to 85°C
3 = –40°C to 125°C
Voltage Extension
Blank = Standard option
S = VCC,min extension to 2.5V of VCC and available only with 80ns speed class option
Shipping Options
Blank = Standard packing
T = Tape and reel packing
E = RoHS-compliant package, standard packing
F = RoHS-compliant package, tape and reel packing
Notes:
1. Device speed in conjunction with temperature range = 6 to denote automotive grade (–40° to 85°C) parts.
2. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts, or
in conjunction with temperature range = 3 to denote automotive grade (–40° to 125°C) parts.
3. Access time, automotive device, in conjunction with temperature range = 3 and voltage extension = S.
4. Device speed in conjunction with temperature range = 6 to denote industrial grade (–40° to 85°C) parts.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
2
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
Contents
General Description ......................................................................................................................................... 6
Signal Assignments ........................................................................................................................................... 8
Signal Descriptions ......................................................................................................................................... 11
Memory Organization .................................................................................................................................... 13
Memory Configuration ............................................................................................................................... 13
Memory Map, x8 – 16Mb Density ................................................................................................................ 13
Memory Map, x16 – 16Mb Density .............................................................................................................. 14
Bus Operations ............................................................................................................................................... 15
Read .......................................................................................................................................................... 15
Write .......................................................................................................................................................... 15
Standby and Automatic Standby ................................................................................................................. 15
Output Disable ........................................................................................................................................... 16
Commands .................................................................................................................................................... 16
READ Operations ........................................................................................................................................... 17
READ/RESET Command ............................................................................................................................ 17
READ CFI Command .................................................................................................................................. 17
AUTO SELECT Operations .............................................................................................................................. 18
AUTO SELECT Command ........................................................................................................................... 18
Read Device ID ............................................................................................................................................... 18
Block and Chip Protection .............................................................................................................................. 19
BLOCK PROTECT Command ...................................................................................................................... 19
Block Protection Using Programmer Equipment .......................................................................................... 20
In-System Block Protection ......................................................................................................................... 22
BYPASS Operations ......................................................................................................................................... 24
UNLOCK BYPASS Command ...................................................................................................................... 24
UNLOCK BYPASS RESET Command ............................................................................................................ 24
PROGRAM Operations .................................................................................................................................... 24
PROGRAM Command ................................................................................................................................ 24
UNLOCK BYPASS PROGRAM Command ..................................................................................................... 24
ERASE Operations .......................................................................................................................................... 25
CHIP ERASE Command .............................................................................................................................. 25
BLOCK ERASE Command ........................................................................................................................... 25
ERASE SUSPEND Command ....................................................................................................................... 26
ERASE RESUME Command ........................................................................................................................ 26
Status Register ................................................................................................................................................ 27
Data Polling Bit (DQ7) ................................................................................................................................ 27
Toggle Bit (DQ6) ......................................................................................................................................... 27
Error Bit (DQ5) ........................................................................................................................................... 27
Erase Timer Bit (DQ3) ................................................................................................................................. 28
Alternative Toggle Bit (DQ2) ........................................................................................................................ 28
Absolute Ratings and Operating Conditions ..................................................................................................... 31
DC Characteristics .......................................................................................................................................... 33
Read AC Characteristics .................................................................................................................................. 34
Write AC Characteristics ................................................................................................................................. 36
Program/Erase Characteristics ........................................................................................................................ 40
Reset Characteristics ...................................................................................................................................... 41
Package Dimensions ....................................................................................................................................... 42
Revision History ............................................................................................................................................. 45
Rev. B – 06/13 ............................................................................................................................................. 45
Rev. A – 07/12 ............................................................................................................................................. 45
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
3
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
List of Figures
Figure 1: Logic Diagram ................................................................................................................................... 7
Figure 2: 48-Pin TSOP 160ET/B ........................................................................................................................ 8
Figure 3: 48-Ball TFBGA 160ET/B ..................................................................................................................... 9
Figure 4: 64-Ball FBGA 160ET/B ..................................................................................................................... 10
Figure 5: Block Protect Flowchart – Programmer Equipment ........................................................................... 20
Figure 6: Chip Unprotect Flowchart – Programmer Equipment ....................................................................... 21
Figure 7: Block Protect Flowchart – In-System Equipment ............................................................................... 22
Figure 8: Chip Protection Flowchart – In-System Equipment ........................................................................... 23
Figure 9: Data Polling Flowchart .................................................................................................................... 29
Figure 10: Data Toggle Flowchart ................................................................................................................... 30
Figure 11: AC Measurement Load Circuit ....................................................................................................... 32
Figure 12: AC Measurement I/O Waveform ..................................................................................................... 32
Figure 13: Random AC Timing ....................................................................................................................... 35
Figure 14: WE#-Controlled AC Timing ............................................................................................................ 37
Figure 15: CE#-Controlled AC Timing ............................................................................................................. 39
Figure 16: Reset/Block Temporary Unprotect AC Waveforms ........................................................................... 41
Figure 17: 48-Pin TSOP – 12mm x 20mm ........................................................................................................ 42
Figure 18: 48-Ball TFBGA – 6mm x 8mm ......................................................................................................... 43
Figure 19: 64-Ball FBGA – 11mm x 13mm ....................................................................................................... 44
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
4
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Features
List of Tables
Table 1: Part Number Information ................................................................................................................... 2
Table 2: Signal Names ...................................................................................................................................... 7
Table 3: Signal Descriptions ........................................................................................................................... 11
Table 4: x8 Top Boot, Blocks [34:0] .................................................................................................................. 13
Table 5: x8 Bottom Boot, Blocks [34:0] ............................................................................................................ 13
Table 6: x16 Top Boot, Blocks [34:0] ................................................................................................................ 14
Table 7: x16 Bottom Boot, Blocks [34:0] .......................................................................................................... 14
Table 8: Bus Operations ................................................................................................................................. 15
Table 9: Commands – 16-Bit Mode (BYTE# = V IL) ............................................................................................ 16
Table 10: Commands – 8-Bit Mode (BYTE# = V IL) ............................................................................................ 17
Table 11: Read Electronic Signature ............................................................................................................... 18
Table 12: Block and Chip Protection Signal Settings ........................................................................................ 19
Table 13: Status Register Bits .......................................................................................................................... 28
Table 14: Absolute Maximum/Minimum Ratings ............................................................................................ 31
Table 15: Operating Conditions ...................................................................................................................... 31
Table 16: Input/Output Capacitance .............................................................................................................. 32
Table 17: DC Current Characteristics .............................................................................................................. 33
Table 18: DC Voltage Characteristics .............................................................................................................. 33
Table 19: Read AC Characteristics .................................................................................................................. 34
Table 20: WE#-Controlled Write AC Characteristics ......................................................................................... 36
Table 21: CE#-Controlled Write AC Characteristics ......................................................................................... 38
Table 22: Program/Erase Times and Endurance Cycles ................................................................................... 40
Table 23: Reset/Block Temporary Unprotect AC Characteristics ...................................................................... 41
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
5
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
General Description
General Description
The M29W160ET/B (2Mb x8 or 1Mb x16) is a nonvolatile device that can be read, erased
and reprogrammed. These operations can be performed using a single low voltage (2.7–
3.6V) supply. On power-up the memory defaults to read mode where it can be read in
the same way as a ROM or EPROM.
The device is divided into blocks that can be erased independently to preserve valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE commands from modifying the memory. PROGRAM and
ERASE commands are written to the command interface of the memory. An on-chip
program/erase controller simplifies the process of programming or erasing the memory
by taking care of all of the special operations that are required to update the memory
contents.
The end of a PROGRAM or ERASE operation can be detected and any error conditions
identified. The command set required to control the memory is consistent with JEDEC
standards.
The blocks in the memory are asymmetrically arranged. The first or last 64KB have been
divided into four additional blocks. The 16KB boot block can be used for a small initialization code to start the microprocessor, the two 8 KB parameter blocks can be used for
parameter storage, and the remaining 32KB is a small main block where the application
may be stored.
CE#, OE#, and WE# signals control the bus operation. They enable simple connection to
most microprocessors, often without additional logic.
The device supplied with all the bits erased (set to 1).
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
6
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
General Description
Figure 1: Logic Diagram
VCC
15
A[MAX:0]
DQ[14:0]
DQ15/A-1
WE#
CE#
OE#
RY/BY#
RST#
BYTE#
VSS
Table 2: Signal Names
Name
Description
Type
A[19:0]
Address inputs
Input
CE#
Chip enable
Input
OE#
Output enable
Input
WE#
Write enable
Input
Byte/word organization select
Input
Reset/block temporary unprotect
Input
BYTE#
RST#
DQ[7:0]
Data I/O
I/O
DQ[14:8]
Data I/O
I/O
DQ15/A-1
Data I/O or address input
I/O
RY/BY#
Ready/busy output
Output
VCC
Core power supply
Supply
VSS
Ground
Supply
NC
Not connected internally
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
–
7
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Signal Assignments
Figure 2: 48-Pin TSOP 160ET/B
A15
A14
A13
A12
A11
A10
A9
A8
A19
RFU
WE#
RST#
RFU
RFU
RY/BY#
A18
A17
A7
A6
A5
A4
A3
A2
A1
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
BYTE#
VSS
DQ15/A-1
DQ7
DQ14
DQ6
DQ13
DQ5
DQ12
DQ4
VCC
DQ11
DQ3
DQ10
DQ2
DQ9
DQ1
DQ8
DQ0
OE#
VSS
CE#
A0
1. RFU = reserved for future use.
8
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Figure 3: 48-Ball TFBGA 160ET/B
1
2
3
4
5
6
6
5
4
3
2
1
A
A
A3
A7 RY/BY# WE#
A9
A13
A13
A9
WE# RY/BY# A7
A3
B
B
A4
A17
RFU
RST#
A8
A12
A12
A8
RST#
RFU
A17
A4
C
C
A2
A6
A18
RFU
A10
A14
A14
A10
RFU
A18
A6
A2
D
D
A1
A5
RFU
A19
A11
A15
A15
A11
A19
RFU
A5
A1
E
E
A0
D0
D2
D5
D7
A16
A16
D7
D5
D2
D0
A0
F
F
CE#
D8
D10
D12
D14 BYTE#
BYTE# D14
D12
D10
D8
CE#
G
G
OE#
D9
D11
VCC
D13 D15/A-1
D15/A-1 D13
VCC
D11
D9
OE#
H
H
VSS
D1
D3
D4
D6
VSS
VSS
Top view – ball side down
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
D6
D4
D3
D1
VSS
Bottom view – ball side up
1. RFU = reserved for future use.
9
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Assignments
Figure 4: 64-Ball FBGA 160ET/B
1
2
3
4
5
6
7
8
8
7
6
5
4
3
2
1
A
A
RFU
A3
A7 RY/BY# WE#
A9
A13
RFU
RFU
A13
A9
WE# RY/BY# A7
A3
RFU
B
B
RFU
A4
A17 VPP/WP# RST#
A8
A12
RFU
RFU
A12
A8
RST# VPP/WP# A17
A4
RFU
C
C
RFU
A2
A6
A18
RFU
A10
A14
RFU
RFU
A14
A10
RFU
A18
A6
A2
RFU
D
D
RFU
A1
A5
RFU
A19
A11
A15
VCC
VCC
A15
A11
A19
RFU
A5
A1
RFU
E
E
RFU
A0
D0
D2
D5
D7
A16
VSS
VSS
A16
D7
D5
D2
D0
A0
RFU
F
F
VCC
CE#
D8
D10
D12
D14 BYTE# RFU
RFU BYTE# D14
D12
D10
D8
CE#
VCC
G
G
RFU
OE#
D9
D11
VCC
D13 D15/A-1 RFU
RFU D15/A-1 D13
VCC
D11
D9
OE#
RFU
H
H
RFU
VSS
D1
D3
D4
D6
VSS
RFU
RFU
Top view – ball side down
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
VSS
D6
D4
D3
D1
VSS
RFU
Bottom view – ball side up
1. RFU = reserved for future use.
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Descriptions
Signal Descriptions
The table below is a comprehensive list of signals for this device family. All signals listed
may not be supported on this device. See Signal Assignments for information specific to
this device.
Table 3: Signal Descriptions
Name
Type
Description
A[MAX:0]
Input
Address: Selects the cells in the memory array to access during READ operations. During
WRITE operations, controls the commands sent to the command interface of the program/
erase controller.
CE#
Input
Chip enable: Activates the memory, enabling READ and WRITE operations. When CE# is
HIGH, all other pins are ignored.
OE#
Input
Output enable: Controls the bus READ operation of the memory.
WE#
Input
Write enable: Controls the bus WRITE operation of the command interface.
BYTE#
Input
Byte/word organization select: Switches between x8 and x16 bus modes. When BYTE# is
LOW, the device is in x8 mode; when HIGH, the device is in x16 mode.
RST#
Input
Reset/block temporary unprotect: Applies a hardware reset to the memory or temporarily
removes protection from all blocks that have been protected. A hardware reset is achieved
by holding RST# LOW for at least tPLPX. When RST# goes HIGH, the memory is ready for
READ and WRITE operations after tPHEL or tRHEL, whichever occurs last.
Holding RST# at VID temporarily unprotects the protected blocks so that PROGRAM and
ERASE operations are possible on all blocks. The transition from HIGH to VID must be slower
than tPHPHH.
DQ[7:0]
I/O
Data I/O: Outputs the data stored at the selected address during READ operations. During
WRITE operations, represents the commands sent to the command interface of the program/
erase controller.
DQ[14:8]
I/O
Data I/O: Outputs data stored at the selected address during a READ operation when BYTE#
is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During a WRITE operation, the command register does not use these bits. When reading the status register, these
bits should be ignored.
DQ15/A-1
I/O
Data I/O or address input: When BYTE# is HIGH, this pin behaves as a data I/O pin,
DQ[14:8]. When BYTE# is LOW, this pin behaves as an address pin; DQ15/A-1 LOW selects the
LSB of the word on the other addresses, DQ15/A-1 HIGH selects the MSB. Throughout the
text, consider references to data I/O to include this pin when BYTE# is HIGH and consider references to address inputs to include this pin when BYTE# is LOW, except when stated explicitly otherwise.
RY/BY#
Output
Ready/busy: Open-drain output that can be used to identify when the device can be read.
RY/BY# is High-Z during read, auto select, and erase suspend modes. After a hardware reset,
a READ or WRITE operation cannot begin until RY/BY# becomes High-Z.
During a PROGRAM or ERASE operation, RY/BY# is LOW and remains LOW during READ/
RESET commands or hardware resets until the memory is ready to enter read mode.
The use of an open-drain output enables the RY/BY# pins from several memory devices to be
connected to a single pull-up resistor. A LOW indicates that one or more of the devices is
busy.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
11
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Signal Descriptions
Table 3: Signal Descriptions (Continued)
Name
Type
VCC
Supply
Supply voltage: Provides the power supply for device operations. The command interface is
disabled when VCC <= VLKO. This prevents a WRITE operation from accidentally damaging the
data during power-up, power-down, and power surges. If the program/erase controller is
programming or erasing during this time, the operation aborts, and the contents being altered will be invalid. See Note 1.
VSS
Supply
Ground: All VSS pins must be connected to the system ground.
RFU
–
Reserved for future use: RFUs should be not connected.
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Description
1. A 0.1μF capacitor should be connected between VCC and VSS to decouple the current
surges from the power supply. The PCB track widths must be sufficient to carry the currents required during PROGRAM and ERASE operations.
12
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Memory Organization
Memory Organization
Memory Configuration
The main memory array is divided into 64KB blocks.
The blocks in the memory are asymmetrically arranged. The first or last 64KB of memory has been divided into four additional blocks. The 16KB boot block can be used for
small initialization code to start the microprocessor, the two 8KB parameter blocks can
be used for parameter storage and the remaining 32KB small main block can be used
for application storage.
Memory Map, x8 – 16Mb Density
Table 4: x8 Top Boot, Blocks [34:0]
Address Range
Block
Block Size
Start
End
34
16KB
001F C000
001F FFFF
33
8KB
001F A000
001F BFFF
32
8KB
001F 8000
001F 9FFF
31
32KB
001F 0000
001F 7FFF
30
64KB
001E 0000
001E FFFF
⋮
⋮
⋮
⋮
2
64KB
0002 0000
0002 FFFF
1
64KB
0001 0000
0001 FFFF
0
64KB
0000 0000
0000 FFFF
Table 5: x8 Bottom Boot, Blocks [34:0]
Address Range
Block
Block Size
Start
End
34
64KB
001F 0000
001F FFFF
33
64KB
001E 0000
001E FFFF
32
64KB
001D 0000
001D FFFF
⋮
⋮
⋮
⋮
4
64KB
0001 0000
0001 FFFF
3
32KB
0000 8000
0000 FFFF
2
8KB
0000 6000
0000 7FFF
1
8KB
0000 4000
0000 5FFF
0
16KB
0000 0000
0000 3FFF
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
13
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Memory Organization
Memory Map, x16 – 16Mb Density
Table 6: x16 Top Boot, Blocks [34:0]
Address Range
Block
Block Size
Start
End
34
8KW
000F E000
000F FFFF
33
4KW
000F D000
000F DFFF
32
4KW
000F C000
000F CFFF
31
16KW
000F 8000
000F BFFF
30
32KW
001E 0000
001E FFFF
⋮
⋮
⋮
⋮
2
32KW
0001 0000
0001 7FFF
1
32KW
0008 0000
0000 FFFF
0
32KW
0000 0000
0000 7FFF
Table 7: x16 Bottom Boot, Blocks [34:0]
Address Range
Block
Block Size
Start
End
34
32KW
000F 8000
000F FFFF
33
32KW
000F 0000
000F 7FFF
32
32KW
000E 8000
000E FFFF
⋮
⋮
⋮
⋮
4
32KW
0000 8000
0000 FFFF
3
16KW
0000 4000
0000 7FFF
2
4KW
0000 3000
0000 3FFF
1
4KW
0000 2000
0000 2FFF
0
8KW
0000 0000
0000 1FFF
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
14
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Bus Operations
Bus Operations
Table 8: Bus Operations
Notes 1 and 2 apply to entire table
8-Bit Mode
Operation
READ
CE# OE#
L
16-Bit Mode
WE#
A[MAX:0],
DQ15/A-1
DQ[14:8]
DQ[7:0]
A[MAX:0]
DQ15/A-1,
DQ[14:0]
H
Cell address
High-Z
Data output
Cell address
Data output
input4
Command address
Data input4
L
WRITE
L
H
L
Command address
High-Z
STANDBY
H
X
X
X
High-Z
High-Z
X
High-Z
OUTPUT
DISABLE
X
H
H
X
High-Z
High-Z
X
High-Z
Notes:
Data
1. Typical glitches of less than 5ns on CE# and WE# are ignored by the device and do not
affect bus operations.
2. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
3. If WP# is LOW, the highest or lowest block remains protected, depending on the line
item.
4. Data input is required when issuing a command sequence or performing data polling or
block protection.
Read
Bus READ operations read from the memory cells, registers, or CFI space. A valid READ
operation requires setting the appropriate address on the address inputs, taking CE#
and OE# LOW and holding WE# HIGH. Data I/O signals output the value.
Write
Bus WRITE operations write to the command interface. A valid WRITE operation requires setting the appropriate address on the address inputs. These are latched by the
command interface on the falling edge of CE# or WE#, whichever occurs last. Values on
data I/O signals are latched by the command interface on the rising edge of CE# or
WE#, whichever occurs first. OE# must remain HIGH during the entire operation.
Standby and Automatic Standby
When the device is in read mode, driving CE# HIGH places the device in standby mode
and drives data I/Os to High-Z. Supply current is reduced to standby (ICC2), by holding
CE# within V CC ±0.2V.
During PROGRAM or ERASE operations, the device continues to use the program/erase
supply current (ICC3) until the operation completes.
Automatic standby enables low power consumption during read mode. When CMOS
levels (VCC ± 0.2 V) drive the bus, and following a READ operation and a period of inactivity specified in DC Characteristics, the memory enters automatic standby as internal
supply current is reduced to ICC2. Data I/O signals still output data if a READ operation
is in progress.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
15
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Commands
Output Disable
Data I/Os are High-Z when OE# is HIGH.
Commands
All bus WRITE operations to the memory are interpreted by the command interface.
Commands consist of one or more sequential bus WRITE operations. Failure to observe
a valid sequence of bus WRITE operations will result in the memory returning to read
mode. The long command sequences are imposed to maximize data security.
The address used for the commands changes, depending on whether the memory is in
16-bit or 8-bit mode. See the x8 and x16 command tables, depending on the configuration that is being used, for a summary of the commands.
Table 9: Commands – 16-Bit Mode (BYTE# = VIL)
Bus WRITE Operations
1st
2nd
Command
Length
Addr
Data
READ/RESET
1
X
F0
3
555
AUTO SELECT
3
3rd
4th
Addr
Data
Addr
Data
AA
2AA
55
X
F0
555
AA
2AA
55
555
90
PROGRAM
4
555
AA
2AA
55
555
A0
UNLOCK BYPASS
3
555
AA
2AA
55
555
20
UNLOCK BYPASS PROGRAM
2
X
A0
PA
PD
UNLOCK BYPASS RESET
2
X
90
X
00
5th
Addr
Data
PA
PD
6th
Addr
Data
Addr
Data
CHIP ERASE
6
555
AA
2AA
55
555
80
555
AA
2AA
55
555
10
BLOCK ERASE
6+
555
AA
2AA
55
555
80
555
AA
2AA
55
BA
30
ERASE SUSPEND
1
X
B0
ERASE RESUME
1
X
30
READ CFI
QUERY
1
55
98
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1. X = " Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the
block. All values in the table are in hexadecimal. The command interface only uses A-1,
A0–A10, and DQ0–DQ7 to verify the commands; A11–A20, DQ8–DQ14, and DQ15 are
"Don't Care." DQ15A-1 is A-1 when BYTE# is VIL or DQ15 when BYTE# is VIH.
16
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
READ Operations
Table 10: Commands – 8-Bit Mode (BYTE# = VIL)
Bus WRITE Operations
1st
Command
Length Addr
READ/RESET
2nd
Data
1
X
F0
3rd
Addr
Data
Addr
4th
Data
5th
Addr
Data
PA
PD
6th
Addr
Data
Addr
Data
3
AAA
AA
555
55
X
F0
AUTO SELECT
3
AAA
AA
555
55
AAA
90
PROGRAM
4
AAA
AA
555
55
AAA
A0
UNLOCK BYPASS
3
AAA
AA
555
55
AAA
20
UNLOCK BYPASS PROGRAM
2
X
A0
PA
PD
UNLOCK BYPASS RESET
2
X
90
X
00
CHIP ERASE
6
AAA
AA
555
55
AAA
80
AAA
AA
555
55
AAA
10
BLOCK ERASE
6+
AAA
AA
555
55
AAA
80
AAA
AA
555
55
BA
30
ERASE SUSPEND
1
X
B0
ERASE RESUME
1
X
30
READ CFI
QUERY
1
55
98
1. X = " Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the
block. All values in the table are in hexadecimal. The command interface only uses A-1,
A0–A10, and DQ0–DQ7 to verify the commands; A11–A20, DQ8–DQ14, and DQ15 are
"Don't Care." DQ15A-1 is A-1 when BYTE# is VIL or DQ15 when BYTE# is VIH.
Note:
READ Operations
READ/RESET Command
The READ/RESET (F0h) command returns the device to read mode and resets the errors
in the status register. One or three bus WRITE operations can be used to issue the
READ/RESET command.
To return the device to read mode, this command can be issued between bus WRITE
cycles before the start of a PROGRAM or ERASE operation. If the READ/RESET command is issued during the timeout of a BLOCK ERASE operation, the device requires up
to 10μs to abort, during which time no valid data can be read.
READ CFI Command
The READ CFI (98h) command puts the device in read CFI mode and is valid only when
the device is in read array or auto select mode. One bus WRITE cycle is required to issue
the command.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
17
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
AUTO SELECT Operations
Once in read CFI mode, bus READ operations will output data from the CFI memory
area. A READ/RESET command must be issued to return the device to the previous
mode (read array or auto select ). A second READ/RESET command is required to put
the device in read array mode from auto select mode.
AUTO SELECT Operations
AUTO SELECT Command
At power-up or after a hardware reset, the device is in read mode. It can then be put in
auto select mode by issuing an AUTO SELECT (90h) command or by applying V ID to A9.
Auto select mode enables the following device information to be read:
• Electronic signature, which includes manufacturer and device code information, as
shown in the Read Electronic Signature table.
• Block protection, which includes the block protection status and extended memory
block protection indicator, as shown in the Block Protection table.
Electronic signature or block protection information is read by executing a READ operation with control signals and addresses set.
Auto select mode can be used by the programming equipment to automatically match a
device with the application code to be programmed.
Three consecutive bus WRITE operations are required to issue an AUTO SELECT command. The device remains in auto select mode until a READ/RESET or READ CFI command is issued.
The device cannot enter auto select mode when a PROGRAM or ERASE operation is in
progress (RY/BY# LOW). However, auto select mode can be entered if the PROGRAM or
ERASE operation has been suspended by issuing a PROGRAM SUSPEND or ERASE SUSPEND command.
Auto select mode is exited by performing a reset. The device returns to read mode unless it entered auto select mode after an ERASE SUSPEND or PROGRAM SUSPEND
command, in which case it returns to erase or program suspend mode.
Read Device ID
Table 11: Read Electronic Signature
Note 1 applies to entire table
Address Input
Data I/O
8-Bit/16-Bit
READ Cycle
A[8:2] A1
A0
DQ[14:8] DQ[7:0]
DQ[15]/A-1,
DQ[14:0]
OE#
Manufacturer code
L
L
H
X
VID
X
L
L
High-Z
20h
0020h
Device code
L
L
H
X
VID
X
L
H
High-Z
C4h2
49h3
22C4h2
2249h3
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
A9
16-Bit Only
CE#
Notes:
WE# A[MAX:10]
8-Bit Only
1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
2. M29W160ET.
3. M29W160EB.
18
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Block and Chip Protection
Block and Chip Protection
Block protection can be used to prevent any operation from modifying the data stored
in the Flash. Each block can be protected individually. Once protected, PROGRAM and
ERASE operations on the block fail to change the data.
Do not allow microprocessor service interrupts to interfere with timing, and do not
abort an operation before its completion. The CHIP UNPROTECT operation can take
several seconds, and a user message should be provided to show progression. (Refer to
the following flowcharts for details.)
Unlike the command interface of the program/erase controller, techniques for protecting and unprotecting blocks change from one Flash memory supplier to another. Care
should be taken when changing drivers for one part to work on another.
BLOCK PROTECT Command
There are three techniques that can be used to control block protection. These are programmer technique, in-system technique, and temporary unprotect. Temporary unprotect is controlled by RST#.
Unlike the command interface of the program/erase controller, the techniques for protecting and unprotecting blocks change between different Flash memory suppliers.
Table 12: Block and Chip Protection Signal Settings
Signals
Block Protect
Chip Unprotect
Verify Block Protection
Verify Block Unprotect
L
VID
L
L
CE#
OE#
VID
VID
L
L
WE#
L pulse
L pulse
H
H
X
Block base address
Block base address
Address Input, 8-Bit and 16-Bit
A[MAX:16]
Block base address
A15
H
A14
X
A13
X
A12
H
A11
X
X
X
X
A10
X
X
X
X
A9
VID
VID
VID
VID
A8
X
X
X
X
A7
X
X
X
X
A6
X
X
L
H
A5
X
X
X
X
A4
X
X
X
X
A3
X
X
X
X
A2
X
X
X
X
A1
X
X
H
H
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
19
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Block and Chip Protection
Table 12: Block and Chip Protection Signal Settings (Continued)
Signals
Block Protect
Chip Unprotect
Verify Block Protection
Verify Block Unprotect
X
X
L
L
X
X
Pass = XX01h
Retry = XX01h
X
X
Retry = XX00h
Pass = XX00h
A0
Data I/O, 8-Bit and 16-Bit
DQ[15]/A-1, and
DQ[14:0]
Note:
1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW.
Block Protection Using Programmer Equipment
The programmer technique uses high voltage levels (VID) on some of the bus pins.
These cannot be achieved using a standard microprocessor bus; therefore, the technique is recommended only for use in programming equipment.
To protect a block, follow the steps in the following figure. To unprotect the whole chip,
it is necessary to protect all of the blocks first, then all blocks can be unprotected at the
same time.
Figure 5: Block Protect Flowchart – Programmer Equipment
Protect
Setup
Verify
OE#, A9 = VID ,
CE# = V IL
START
End
DATA
=
01h
No
Yes
Wait 4µs
CE# = VIL
ADDRESS = BLOCK ADDRESS
WE# = VIH
CE#, OE# =,VIH
A0, A6 = VIL ,
A1 = VIH
WE# = VIL
A9 = VIH
CE#, OE# = V IH
++n
= 25
Yes
Wait 4µs
PASS
Wait 100µs
OE# = VIL
n=0
WE# = VIH
Wait 60ns
No
A9 = VIH
CE#, OE# = VIH
FAIL
Read DATA
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
20
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Block and Chip Protection
Figure 6: Chip Unprotect Flowchart – Programmer Equipment
START
Set-up
PROTECT ALL BLOCKS
n=0
CURRENT BLOCK = 0
A6, A12, A15 = V IH (1)
CE#, OE#, A9 = V ID
Unprotect
Wait 4µs
WE# = V IL
Wait 10ms
WE# = V IH
CE#, OE# = V IH
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL , A1, A6 = V IH
CE# = VIL
Wait 4µs
OE# = VIL
INCREMENT
CURRENT BLOCK
Verify
Wait 60ns
Read DATA
NO
NO
DATA
=
00h
LAST
++n
YES
YES
End
NO
BLOCK
= 1000
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
YES
A9 = VIH
CE#, OE# = V IH
A9 = VIH
CE#, OE# = V IH
FAIL
PASS
21
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Block and Chip Protection
Notes:
1. Address Inputs A[9:12] give the address of the block that is to be protected. It is imperative that they remain stable during the operation.
2. During the protect and verify phases of the algorithm, CE# must be kept LOW.
In-System Block Protection
The in-system technique requires a high-voltage level on RST#. This can be achieved
without violating the maximum ratings of the components on the microprocessor bus;
therefore, this technique is suitable for use after the Flash has been fitted to the system.
To protect a block, follow the steps in the following figure. To unprotect the whole chip,
it is necessary to protect all of the blocks first, then all the blocks can be unprotected at
the same time.
Figure 7: Block Protect Flowchart – In-System Equipment
Setup
START
Protect
n=0
A0 = VIL , A1 = VIH , A6 = VIL
End
DATA
=
01h
No
Yes
Wait 100µs
RST# = VID
WRITE 60h
ADDRESS = BLOCK ADDRESS
WRITE 60h
ADDRESS = BLOCK ADDRESS
A0 = VIL , A1 = VIH , A6 = VIL
Verify
RST# = VIH
ISSUE READ/RESET
WRITE 40h
ADDRESS = BLOCK ADDRESS
A0 = VIL , A1 = VIH , A6 = VIL
COMMAND
PASS
++n
= 25
No
Yes
RST# = VIH
ISSUE READ/RESET
COMMAND
Wait 4µs
FAIL
READ DATA
ADDRESS = BLOCK ADDRESS
A0 = VIL , A1 = VIH , A6 = VIL
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
22
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Block and Chip Protection
Figure 8: Chip Protection Flowchart – In-System Equipment
START
PROTECT ALL BLOCKS
Set-up
n=0
CURRENT BLOCK = 0
RST# = VID
WRITE 60h
ANY ADDRESS WITH
A0 = VIL , A1 = VIH , A6 = VIH
WRITE 60h
Unprotect
ANY ADDRESS WITH
A0 = VIL , A1 = VIH , A6 = VIH
Wait 10ms
WRITE 40h
Verify
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL , A1 = VIH , A6 = VIH
Wait 4µs
INCREMENT
CURRENT BLOCK
READ DATA
ADDRESS = CURRENT BLOCK ADDRESS
A0 = VIL , A1 = VIH , A6 = VIH
NO
End
NO
DATA
=
00h
++n
LAST
= 1000
BLOCK
YES
NO
YES
RST# = VIH
RST# = VIH
ISSUE READ/RESET
COMMAND
ISSUE READ/RESET
COMMAND
PASS
FAIL
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
YES
23
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
BYPASS Operations
BYPASS Operations
UNLOCK BYPASS Command
The UNLOCK BYPASS command is used with the UNLOCK BYPASS PROGRAM command to program the memory. When device access time is slow, as with some EEPROM
programmers, considerable time can be saved using BYPASS operations. Three bus
WRITE operations are required to issue the UNLOCK BYPASS command.
After the UNLOCK BYPASS command is issued, the memory will accept only the UNLOCK BYPASS PROGRAM and the UNLOCK BYPASS RESET commands. The memory
can be read as if in read mode.
UNLOCK BYPASS RESET Command
The UNLOCK BYPASS RESET command can be used to return to read/reset mode from
unlock bypass mode. Two bus WRITE operations are required to issue this command.
The READ/RESET command does not exit the device from unlock bypass mode.
PROGRAM Operations
PROGRAM Command
The PROGRAM command can be used to program a value to one address in the memory array at a time. The command requires four bus WRITE operations; the final WRITE
operation latches the address and data and starts the program/erase controller.
If the address falls in a protected block, the command is ignored, the data remains unchanged, the status register is never read, and no error condition is given.
During the PROGRAM operation, the memory ignores all commands. It is not possible
to issue any command to abort or pause the operation. A READ operation during the
PROGRAM operation will output the status register on the data I/O.
When the PROGRAM operation completes, the memory returns to the read mode unless an error has occurred. When an error occurs, the memory continues to output the
status register. A READ/RESET command must be issued to reset the error condition
and return to read mode.
Note: The PROGRAM command cannot change a bit set at 0 back to 1. An ERASE command must be used to set all the bits in a block or in the whole memory from 0 to 1.
UNLOCK BYPASS PROGRAM Command
When the device is in unlock bypass mode, the UNLOCK BYPASS PROGRAM (A0h)
command can be used to program one address in the memory array. The command requires two bus WRITE operations instead of the four required by a standard PROGRAM
command; the final WRITE operation latches the address and data and starts the program/erase controller. (The standard PROGRAM command requires four bus WRITE
operations.) The PROGRAM operation using the UNLOCK BYPASS PROGRAM command behaves identically to the PROGRAM operation using the PROGRAM command.
The operation cannot be aborted. A bus READ operation to the memory outputs the
status register.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
24
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
ERASE Operations
ERASE Operations
CHIP ERASE Command
The CHIP ERASE command can be used to erase the entire chip. Six bus WRITE operations are required to issue the CHIP ERASE command and start the program/erase controller.
If any blocks are protected, then these are ignored, and all the other blocks are erased. If
all of the blocks are protected, the CHIP ERASE operation appears to start, but will terminate within about 100µs, leaving the data unchanged. No error condition is given
when protected blocks are ignored.
During the ERASE operation, the memory will ignore all commands. It is not possible to
issue any command to abort the operation. Typical chip erase times are given in the
Program/Erase Times and Program/Erase Endurance Cycles table. All bus READ operations during the CHIP ERASE operation will output the status register on the data I/O.
(See the Status Register section for more details).
After the CHIP ERASE operation has completed, the memory will return to the read
mode, unless an error has occurred. When an error occurs, the memory will continue to
output the status register. A READ/RESET command must be issued to reset the error
condition and return to read mode.
The CHIP ERASE command sets all of the bits in unprotected blocks of the memory to
1. All previous data is lost.
BLOCK ERASE Command
The BLOCK ERASE command can be used to erase a list of one or more blocks. Six bus
WRITE operations are required to select the first block in the list. Each additional block
in the list can be selected by repeating the sixth bus WRITE operation using the address
of the additional block. The BLOCK ERASE operation starts the program/erase controller about 50µs after the last bus WRITE operation. After the program/erase controller
starts, it is not possible to select any more blocks. Each additional block must therefore
be selected within 50µs of the last block. The 50µs timer restarts when an additional
block is selected. The status register can be read after the sixth bus WRITE operation.
(See the Status Register section for details on how to identify if the program/erase controller has started the BLOCK ERASE operation.)
If any selected blocks are protected, these are ignored, and all the other selected blocks
are erased. If all of the selected blocks are protected, the BLOCK ERASE operation appears to start, but will terminate within about 100µs, leaving the data unchanged. No
error condition is given when protected blocks are ignored.
During the BLOCK ERASE operation, the memory will ignore all commands except the
ERASE SUSPEND command. Typical block erase times are given in the Program/Erase
Times and Program/Erase Endurance Cycles table. All bus READ operations during the
BLOCK ERASE operation will output the status register on the data inputs/outputs. (See
the Status Register section for more details.)
After the BLOCK ERASE operation has completed, the memory will return to the read
mode, unless an error has occurred. When an error occurs, the memory will continue to
output the status register. A READ/RESET command must be issued to reset the error
condition and return to read mode.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
25
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
ERASE Operations
The BLOCK ERASE command sets all of the bits in the unprotected selected blocks to 1.
All previous data in the selected blocks is lost.
ERASE SUSPEND Command
The ERASE SUSPEND command may be used to temporarily suspend a BLOCK ERASE
operation and return the memory to read mode. The command requires one bus
WRITE operation.
The program/erase controller will suspend within the erase suspend latency time after
the ERASE SUSPEND command is issued. (See the Program/Erase Times and Program/
Erase Endurance Cycles table for numerical values.) After the program/erase controller
has stopped, the memory will be set to read mode, and the ERASE operation will be suspended. If the ERASE SUSPEND command is issued during the period when the memory is waiting for an additional block (before the program/erase controller starts), the
ERASE operation is suspended immediately and will start immediately when the ERASE
RESUME command is issued. It is not possible to select any further blocks to erase after
the ERASE RESUME.
During ERASE SUSPEND, it is possible to read and program cells in blocks that are not
being erased; both READ and PROGRAM operations behave as normal on these blocks.
If any attempt is made to program in a protected block or in the suspended block, the
PROGRAM command is ignored, and the data remains unchanged. The status register is
not read, and no error condition is given. Reading from blocks that are being erased will
output the status register.
It is also possible to issue the AUTO SELECT and UNLOCK BYPASS commands during
an ERASE SUSPEND operation. The READ/RESET command must be issued to return
the device to read array mode before the RESUME command will be accepted.
ERASE RESUME Command
The ERASE RESUME command must be used to restart the program/erase controller
from ERASE SUSPEND. An ERASE operation can be suspended and resumed more than
once.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
26
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Status Register
Status Register
Bus READ operations from any address always read the status register during PROGRAM and ERASE operations. It is also read during ERASE SUSPEND operations when
an address within a block being erased is accessed. The bits in the status register are
summarized in the Status Register Bits table.
Data Polling Bit (DQ7)
The data polling bit can be used to identify whether the program/erase controller has
successfully completed its operation or if it has responded to an ERASE SUSPEND operation. The data polling bit is output on DQ7 when the status register is read.
During PROGRAM operations, the data polling bit outputs the complement of the bit
being programmed to DQ7. After successful completion of the PROGRAM operation,
the memory returns to read mode, and bus READ operations from the address just programmed output DQ7, not its complement.
During ERASE operations, the data polling bit outputs 0, the complement of the erased
state of DQ7. After successful completion of the ERASE operation, the memory returns
to read mode.
In erase suspend mode, the data polling bit will output a 1 during a bus READ operation
within a block being erased. The data polling bit will change from a 0 to a 1 when the
program/erase controller has suspended the ERASE operation. The Data Polling Flowchart gives an example of how to use the data polling bit. A valid address is the address
being programmed or an address within the block being erased.
Toggle Bit (DQ6)
The toggle bit can be used to identify whether the program/erase controller has successfully completed its operation or if it has responded to an ERASE SUSPEND command. The toggle bit is output on DQ6 when the status register is read.
During PROGRAM and ERASE operations, the toggle bit changes from 0 to 1 to 0, etc.,
with successive bus READ operations at any address. After successful completion of the
operation, the memory returns to read mode.
During erase suspend mode, the toggle bit will output when addressing a cell within a
block being erased. The toggle bit will stop toggling when the program/erase controller
has suspended the ERASE operation.
If any attempt is made to erase a protected block, the operation is aborted, no error is
signaled, and DQ6 toggles for approximately 100µs. If any attempt is made to program a
protected block or a suspended block, the operation is aborted, no error is signaled, and
DQ6 toggles for approximately 1µs. The Data Toggle Flowchart gives an example of how
to use the data toggle bit.
Error Bit (DQ5)
The error bit can be used to identify errors detected by the program/erase controller.
The error bit is set to 1 when a PROGRAM, BLOCK ERASE, or CHIP ERASE operation
fails to write the correct data to the memory. If the error bit is set, a READ/RESET command must be issued before other commands are issued. The error bit is output on
DQ5 when the status register is read.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
27
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Status Register
Note that the PROGRAM command cannot change a bit set to 0 back to 1, and attempting to do so will set DQ5 to 1. A bus READ operation to that address will show the bit is
still 0. One of the ERASE commands must be used to set all the bits in a block or in the
whole memory from 0 to 1.
Erase Timer Bit (DQ3)
The erase timer bit can be used to identify the start of program/erase controller operation during a BLOCK ERASE command. When the program/erase controller starts erasing, the erase timer bit is set to 1. Before the program/erase controller starts, the erase
timer bit is set to 0, and additional blocks to be erased may be written to the command
interface. The erase timer bit is output on DQ3 when the status register is read.
Alternative Toggle Bit (DQ2)
The alternative toggle bit can be used to monitor the program/erase controller during
ERASE operations. It is output on DQ2 when the status register is read.
During CHIP ERASE and BLOCK ERASE operations, the toggle bit changes from 0 to 1 to
0, etc., with successive bus READ operations from addresses within the blocks being
erased. A protected block is treated the same as a block not being erased. After the operation completes, the memory returns to read mode.
During an ERASE SUSPEND operation, the alternative toggle bit changes from 0 to 1 to
0, etc., with successive bus READ operations from addresses within the blocks being
erased. Bus READ operations to addresses within blocks not being erased will output
the memory cell data as if in read mode.
After an ERASE operation that causes the error bit to be set, the alternative toggle bit
can be used to identify which block or blocks have caused the error. The alternative toggle bit changes from 0 to 1 to 0, etc., with successive bus READ operations from addresses within blocks that have not erased correctly. The alternative toggle bit does not
change if the addressed block has erased correctly.
Table 13: Status Register Bits
Operation
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY#
PROGRAM
Any address
DQ7#
Toggle
0
–
–
0
PROGRAM DURING
ERASE SUSPEND
Any address
DQ7#
Toggle
0
–
–
0
PROGRAM ERROR
Any address
DQ7#
Toggle
1
–
–
0
CHIP ERASE
Any address
0
Toggle
0
1
Toggle
0
BLOCK ERASE BEFORE
TIMEOUT
Erasing block
0
Toggle
0
0
Toggle
0
Non-erasing block
0
Toggle
0
0
No Toggle
0
Erasing block
0
Toggle
0
1
Toggle
0
Non-erasing block
0
Toggle
0
1
No Toggle
0
Erasing block
1
No Toggle
0
–
Toggle
1
BLOCK ERASE
ERASE SUSPEND
Non-erasing block
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Data read as normal
28
1
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Status Register
Table 13: Status Register Bits (Continued)
Operation
ERASE ERROR
Address
DQ7
DQ6
DQ5
DQ3
DQ2
RY/BY#
Good block address
0
Toggle
1
1
No Toggle
0
Faulty block address
0
Toggle
1
1
Toggle
0
Note:
1. Unspecified data bits should be ignored.
Figure 9: Data Polling Flowchart
Start
Read DQ7 and DQ5 at valid
1 address
Yes
DQ7 = Data
No
No
DQ5 = 1
Yes
Read DQ7 at valid address
DQ7 = Data
Yes
No
Failure
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Success
29
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Status Register
Figure 10: Data Toggle Flowchart
Start
Read DQ6 at valid address
Read DQ6 and DQ5 at valid address
DQ6 = Toggle
No
Yes
No
DQ5 = 1
Yes
Read DQ6 (twice) at valid address
DQ6 = Toggle
No
Yes
Failure
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
30
Success
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Absolute Ratings and Operating Conditions
Absolute Ratings and Operating Conditions
Stresses greater than those listed may cause permanent damage to the device. This is a
stress rating only, and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may adversely affect reliability.
Table 14: Absolute Maximum/Minimum Ratings
Parameter
Symbol
Min
Max
Unit
Temperature under bias
TBIAS
–50
125
°C
Storage temperature
TSTG
–65
150
°C
Input/output voltage
VIO
–0.6
VCC + 0.6
V
Supply voltage
VCC
–0.6
4
V
Identification voltage
VID
–0.6
13.5
V
Notes:
Notes
1, 2
1. During signal transitions, minimum voltage may undershoot to −2V for periods less than
20ns.
2. During signal transitions, maximum voltage may overshoot to VCC + 2V for periods less
than 20ns.
Table 15: Operating Conditions
M29W160ET/B
70ns
Parameter
Supply voltage
7Ans
80ns
1
90ns
Symbol
Min
Max
Min
Max
Min
Max
Min
Max
Unit
VCC
2.7
3.6
2.7
3.6
2.5
3.6
2.7
3.6
V
–40
85/1252
–40
85
–40
125
–40
85
°C
10
–
10
–
Ambient operating
temperature
(device grade 6)
TA
Load capacitance
CL
Input rise and fall times
–
Input pulse voltages
–
0 to VCC
0 to VCC
0 to VCC
0 to VCC
V
Input and output timing
reference voltages
–
VCC/2
VCC/2
VCC/2
VCC/2
V
Notes:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
30
–
30
10
–
30
30
pF
10
ns
1. 80ns option supported only on –40°C to 125°C devices.
2. 85°C = Industrial part; 125°C = Automotive grade part.
31
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Absolute Ratings and Operating Conditions
Figure 11: AC Measurement Load Circuit
VCC
VCC
25kΩ
Device
under
test
CL
25kΩ
0.1µF
Note:
1. CL includes jig capacitance.
Figure 12: AC Measurement I/O Waveform
VCCQ
VCCQ/2
0V
Table 16: Input/Output Capacitance
Parameter
Input capacitance
Output capacitance
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Symbol
Test Condition
Min
Max
Unit
CIN
VIN = 0V
–
6
pF
COUT
VOUT = 0V
–
12
pF
1. Sampled only, not 100% tested.
32
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
DC Characteristics
DC Characteristics
Table 17: DC Current Characteristics
Parameter
Input leakage current
Symbol
Conditions
Typ
Max
Unit
ILI
0V ≤ VIN ≤ VCC
–
±1
µA
Notes
Output leakage current
ILO
0V ≤ VOUT ≤ VCC
–
±1
µA
Supply read current
ICC1
CE# = VIL, OE# = VIH,
f = 6 MHz
4.5
10
mA
Supply standby current
ICC2
CE# = VCC ±0.2V
RP# = VCC ±0.2V
35
100
µA
1
Supply program/erase current
ICC3
Program/erase controller active
–
20
mA
2
Identification current
IID
A9 = VID
–
100
µA
Notes:
1. When the bus is inactive for 150ns or more, the memory enters automatic standby.
2. Sampled only; not 100% tested.
Table 18: DC Voltage Characteristics
Symbol
Conditions
Min
Max
Unit
Input LOW voltage
Parameter
VIL
–
–0.5
0.8
V
Input HIGH voltage
VIH
–
0.7 VCC
VCC + 0.3
V
Output LOW voltage
VOL
IOL = 1.8mA
–
0.45
V
Output HIGH voltage
VOH
IOH = –100µA
VCC - 0.4
–
V
Identification voltage
VID
–
11.5
12.5
V
Program/erase lockout
supply voltage
VLKO
–
1.8
2.3
V
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
33
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Read AC Characteristics
Read AC Characteristics
Table 19: Read AC Characteristics
7A/70/801
Symbol
Parameter
90
Legacy
JEDEC
Condition
Min
Max
Min
Max
Unit
Address valid to next address
valid
tRC
tAVAV
CE# = VIL,
OE# = VIL
70
–
90
–
ns
Address valid to output valid
tACC
tAVQV
CE# = VIL,
OE# = VIL
–
70
–
90
ns
CE# LOW to output transition
tLZ
tELQX
OE# = VIL
0
–
0
–
ns
tE
tELQV
OE# = VIL
–
70
–
90
ns
tOLZ
tGLQX
CE# = VIL
0
–
0
–
ns
OE# LOW to output valid
tOE
tGLQV
CE# = VIL
–
25
–
35
ns
CE# HIGH to output High-Z
tHZ
tEHQZ
OE# = VIL
–
25
–
30
ns
2
OE# HIGH to output High-Z
tDF
tGHQZ
CE# = VIL
–
25
–
30
ns
2
CE#, OE#, or address transition
to output transition
tOH
tEHQX,
–
0
–
0
–
ns
CE# LOW to output valid
OE# LOW to output transition
Notes
2
2
tGHQX,
tAXQX
CE# to BYTE# LOW
tELFL
tELBL
–
–
5
–
5
ns
CE# to BYTE# HIGH
tELFH
tELBH
–
–
5
–
5
ns
BYTE# LOW to output HIgh-Z
tFLQZ
tBLQZ
–
–
25
–
30
ns
BYTE# HIGH to output valid
tFHQV
tBHQV
–
–
30
–
40
ns
Notes:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1. 70ns becomes 80ns if the 80ns device code is used.
2. Sampled only; not 100% tested.
34
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Read AC Characteristics
Figure 13: Random AC Timing
tRC
A[MAX:0]/
A–1
Valid
tACC
tOH
CE#
tE
tOH
tLZ
tHZ
OE#
tOLZ
tOH
tOE
DQ[7:0]
DQ[15:8]
tDF
Valid
tFHQV
BYTE#
tFLQZ
tELFL/tELFH
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
35
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Write AC Characteristics
Table 20: WE#-Controlled Write AC Characteristics
7A/70/801
Symbol
Parameter
90
Legacy
JEDEC
Min
Max
Min
Max
Unit
tWC
tAVAV
70
–
90
–
ns
CE# LOW to WE# LOW
tCS
tELWL
0
–
0
–
ns
WE# LOW to WE# HIGH
tWP
tWLWH
45
–
50
–
ns
Input valid to WE# HIGH
tDS
tDVWH
45
–
50
–
ns
WE# HIGH to input transition
tDH
tWHDX
0
–
0
–
ns
WE# HIGH to CE# HIGH
tCH
tWHEH
0
–
0
–
ns
WE# HIGH to WE# LOW
tWPH
tWHWL
30
–
30
–
ns
Address valid to WE# LOW
tAS
tAVWL
0
–
0
–
ns
WE# LOW to address transition
tAH
tWLAX
45
–
50
–
ns
OE# HIGH to WE# LOW
–
tGHWL
0
–
0
–
ns
WE# HIGH to OE# LOW
tOEH
tWHGL
0
–
0
–
ns
Program/erase valid to RY/BY#
LOW
tBUSY
tWHRL
–
30
–
35
ns
tVCS
tVCHEL
50
–
50
–
µs
Address valid to next address valid
VCC HIGH to CE# LOW
Notes:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Notes
2
2
1. 70ns becomes 80ns if the 80ns device code is used.
2. Sampled only; not 100% tested.
36
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 14: WE#-Controlled AC Timing
tWC
A[MAX:0]/
A-1
Valid
tAH
tAVWL
tCH
CE#
tCS
OE#
tGHWL
tOEH
tWP
WE#
tWPH
tDS
DQ[7:0]/
DQ[15:8]
VCC
tDH
Valid
tVCS
RY/BY#
tBUSY
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
37
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Table 21: CE#-Controlled Write AC Characteristics
7A/70/802
Symbol
Parameter
Legacy
JEDEC
Min
Address valid to next address valid
tWC
tAVAV
WE# LOW to CE# LOW
tWS
tWLEL
CE# LOW to CE# HIGH
tCP
90
Max
Min
70
–
90
–
ns
0
–
0
–
ns
tELEH
45
–
50
–
ns
Input valid to CE# HIGH
tDS
tDVEH
45
–
50
–
ns
CE# HIGH to input transition
tDH
tEHDX
0
–
0
–
ns
CE# HIGH to WE# HIGH
tWH
tEHWH
0
–
0
–
ns
CE# HIGH to CE# LOW
tCPH
tEHEL
30
–
30
–
ns
Address valid to CE# LOW
tAS
tAVEL
0
–
0
–
ns
CE# LOW to address transition
tAH
tELAX
45
–
50
–
ns
OE# HIGH to CE# LOW
–
tGHEL
0
–
0
–
ns
CE# HIGH to OE# LOW
tOEH
tEHGL
0
–
0
–
ns
Program/Erase valid to RY/BY# LOW
tBUSY
tEHRL
–
30
–
35
ns
tVCS
tVCHWL
50
–
50
–
µs
VCC HIGH to WE# LOW
Notes:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
Max
Unit
1. 70ns becomes 80ns if the 80ns device code is used.
2. Sampled only; not 100% tested.
38
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Write AC Characteristics
Figure 15: CE#-Controlled AC Timing
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
39
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Program/Erase Characteristics
Program/Erase Characteristics
Table 22: Program/Erase Times and Endurance Cycles
Notes 1 and 2 apply to the entire table
Parameter
Min
Typ
Max
Unit
Notes
Chip erase
–
29
60
s
3
Block erase (64KB)
–
0.8
1.6
s
4
Erase suspend latency time
–
20
25
µs
4
Program (byte or word)
–
13
200
µs
3
Chip program (byte by byte)
–
26
120
s
3
Chip program (word by word)
–
13
60
s
3
100,000
–
–
cycles
20
–
–
years
PROGRAM/ERASE cycles (per block)
Data retention
Notes:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1. Typical values measured at room temperature and nominal voltages and for not cycled
devices.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and VCC after
100,000 PROGRAM/ERASE cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
40
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Reset Characteristics
Reset Characteristics
Table 23: Reset/Block Temporary Unprotect AC Characteristics
Symbol
Condition/Parameter
RST# HIGH to WE# LOW; CE# LOW;
OE# LOW
M29W160ET/B
Legacy
JEDEC
7A/70/80
90
Unit
Notes
tRH
tPHWL
50
50
ns
1
0
0
ns
1
Min
tPHEL
tPHGL
RY/BY# HIGH to WE# LOW;
CE# LOW; OE# LOW
tRB
Min
tRHWL
tRHEL
tRHGL
RST# pulse width
RST# LOW to read mode
RST# rise time to VID
Note:
Min
tRP
tPLPX
500
500
ns
Max
tREADY
tPLYH
10
10
µs
1
Min
tVIDR
tPHPHH
500
500
ns
1
1. Sampled only; not 100% tested.
Figure 16: Reset/Block Temporary Unprotect AC Waveforms
WE#, CE#,
OE#
tRH
RY/BY#
tRB
tRP
RST#
tVIDR
tREADY
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
41
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Package Dimensions
Package Dimensions
Figure 17: 48-Pin TSOP – 12mm x 20mm
1
48
0.50 TYP
12.00 + 0.10
0.22 + 0.05
24
0.80 TYP
25
1.00 + 0.05
18.40 + 0.10
1.20 MAX
20.00 + 0.20
0.10 + 0.05
Die
0.10 MIN/
0.21 MAX
o
3 o+ 2 o
3
0.60 + 0.10
0.10 MAX
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1. All dimensions are in millimeters.
42
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Package Dimensions
Figure 18: 48-Ball TFBGA – 6mm x 8mm
6.00 + 0.10
4.00 TYP
0.40 TYP
1.00 TYP
1.20 TYP
0.40 TYP
8.00 + 0.10
Ball A1
5.60 TYP
0.10 MAX
0.80 TYP
0.80 TYP
0.35 MIN/
0.45 MAX
0.90 MAX
1.20 MAX
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
0.26 MIN
1. All dimensions are in millimeters.
43
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Package Dimensions
Figure 19: 64-Ball FBGA – 11mm x 13mm
0.80 TYP
Seating
plane
0.10
64X
Ball A1 ID
8
7
6
5
4
3 2
1
3.00
TYP
A
B
C
13.00 ±0.10
D
7.00 TYP
E
F
G
H
1.00
TYP
1.00
TYP
0.60 ±0.05
2.00 TYP
1.40 MAX
0.48 ±0.05
7.00 TYP
11.00 ±0.10
Note:
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
1. All dimensions are in millimeters.
44
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.
16Mb: 3V Embedded Parallel NOR Flash
Revision History
Revision History
Rev. B – 06/13
• Updates to format, typo fixes
Rev. A – 07/12
• Initial Micron brand release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef84e1488c
m29W_160e.pdf - Rev. B 06/13 EN
45
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2012 Micron Technology, Inc. All rights reserved.