ZC100 (SDWx7F1C) - Seoul Semiconductor

Product Data Sheet
SDWx7F1C – Chip on Board
Enable High Flux and Cost Efficient System
Z Power Chip on board – ZC series
SDWx7F1C (SDW07F1C, SDW87F1C)
MacAdam
3-Step
RoHS
Product Brief
Description
Features and Benefits
•
The ZC series are LED arrays which provide
High Flux and High Efficacy.
•
It is especially designed for easy assembly
of Lighting fixtures by eliminating reflow
soldering process.
•
It‘s thermal management is excellent than
other power LED solutions with wider Metal
area.
•
•
•
•
•
•
•
•
•
ZC series are ideal light sources for General
Lighting applications including Replacement
Lamps, Industrial & Commercial Lightings
and other high Lumen required applications.
Size 38mm * 38 mm
High Efficacy typ. 150 lm/W
Flux range from 2,000~19,000lm
Power dissipation 15~ 160W
Maximum current
3000K CCT with CRI 80
Uniformed Shadow
Excellent Thermal management
Key Applications
•
•
•
•
Commercial – Downlight
Out door area – High/Low Bay lighting,
Street lighting, Tunnel lighting
Architectural
Industrial – High/Low Bay lighting
Table 1. Product Selection Table
CCT [K]
Part Number
Color
Min.
Typ.
Max.
SDW07F1C
Cool White
4700
-
6000
SDW87F1C
Warm White
2600
-
4200
1
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Product Data Sheet
SDWx7F1C – Chip on Board
Table of Contents
Index
•
Product Brief
1
•
Product Performance & Characterization Guide
3
•
Characteristics Graph
5
•
Product Nomenclature (Labeling Information)
11
•
Color Bin Structure
12
•
Mechanical Dimensions
17
•
Packaging Specification
18
•
Handling of Silicone Resin for LEDs
20
•
Precaution For Use
21
•
Company Information
24
2
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Product Data Sheet
SDWx7F1C – Chip on Board
Performance Characteristics
Table 2-1. Electro Optical Characteristics, T j=25ºC
Part Number
SDW07F1C
SDW87F1C
CCT (K) [1]
Typical
Typical Forward
Luminous Flux [2]
Voltage (V)
[3]
ФV (lm)
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Typ.
1.5A
1.5A
Min.
Typ.
5000
11,800
53
70
124
4000
11,400
53
80
124
3000
11,000
53
80
124
2700
10,500
53
80
124
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Table 2-2. Electro Optical Characteristics, T j=85ºC
Part Number
SDW07F1C
SDW87F1C
CCT (K)
[1]
Typical
Typical Forward
Luminous Flux [2]
Voltage (V)
[3]
ФV (lm)
Typ.
1.5A
1.5A
Min.
Typ.
5000
10,600
51.3
70
124
4000
10,250
51.3
80
124
3000
9,900
51.3
80
124
2700
9,400
51.3
80
124
Notes :
1.
Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.01, CCT 5% tolerance.
2.
Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
3.
ФV is the total luminous flux output as measured with an integrating sphere.
4.
Tolerance is ±3% on forward voltage measurements.
5.
Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
3
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Product Data Sheet
SDWx7F1C – Chip on Board
Performance Characteristics
Table 2-3. Electro Optical Characteristics, T j=25ºC
Part Number
SDW07F1C
SDW87F1C
CCT (K) [1]
Typical
Typical Forward
Luminous Flux [2]
Voltage (V)
[3]
ФV (lm)
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Typ.
1.8A
1.8A
Min.
Typ.
5000
13,750
53.6
70
124
4000
13,300
53.6
80
124
3000
12,750
53.6
80
124
2700
12,200
53.6
80
124
CRI [5],
Ra
Viewing
Angle
(degrees)
2Θ ½
Table 2-4. Electro Optical Characteristics, T j=85ºC
Part Number
SDW07F1C
SDW87F1C
CCT (K)
[1]
Typical
Typical Forward
Luminous Flux [2]
Voltage (V)
[3]
ФV (lm)
Typ.
1.8A
1.8A
Min.
Typ.
5000
12,370
51.9
70
124
4000
11,970
51.9
80
124
3000
11,475
51.9
80
124
2700
11,000
51.9
80
124
Notes :
1.
Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color
coordinate : 0.01, CCT 5% tolerance.
2.
Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements.
3.
ФV is the total luminous flux output as measured with an integrating sphere.
4.
Tolerance is ±3% on forward voltage measurements.
5.
Tolerance is ±2 on CRI measurements.
* No values are provided by real measurement. Only for reference purpose.
4
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Product Data Sheet
SDWx7F1C – Chip on Board
Performance Characteristics
Table 3. Absolute Maximum Characteristics, T j=25ºC
Value
Parameter
Symbol
Unit
Min.
Typ.
Max.
Forward Current
IF
-
1.5
3.0
A
Power Dissipation
Pd
-
80
170
W
Tj
-
-
125
ºC
Operating Temperature
Topr
-40
-
85
ºC
Surface Temperature
TS
-
-
100
ºC
Storage Temperature
Tstg
-40
-
100
ºC
Thermal resistance (J to S)
RθJ-S
-
0.2
-
K/W
-
-
-
±8
kV
[1]
Junction Temperature
ESD Sensitivity(HBM)
[2]
Notes :
1.
IF  3A
2.
At thermal Resistance, J to S means junction to COB’s metal pcb bottom.
3.
A zener diode is included to protect the product from ESD.
5
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Product Data Sheet
SDWx7F1C – Chip on Board
Relative Spectral Distribution
Fig 1. Color Spectrum, T j=25℃, IF=1.5A
Cool white CRI70
Warm white CRI80
Relative Radiant Power (%)
100
80
60
40
20
0
400
450
500
550
600
650
700
750
800
Wavelength (nm)
6
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Product Data Sheet
SDWx7F1C – Chip on Board
Luminous Flux Characteristics
Fig 2. Radiant pattern, T j=25℃, IF=1.5A
Relative Luminous Intensity (%)
100
80
60
40
20
0
-100
-75
-50
-25
0
25
50
75
100
Angular Displacement (degree)
7
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Product Data Sheet
SDWx7F1C – Chip on Board
Forward Current Characteristics
Fig 3. Forward Voltage vs. Forward Current, T j=25℃
3.5
Forward Current (A)
2.8
2.1
1.4
0.7
0.0
40
45
50
55
60
Forward Voltage (V)
Fig 4. Forward Current vs. Relative Luminous Flux, T j=25℃
Relative Luminous Flux (%)
200
160
120
80
40
0
0.0
0.7
1.4
2.1
2.8
3.5
Foward Current (A)
8
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Product Data Sheet
SDWx7F1C – Chip on Board
Junction Temperature Characteristics
Fig 5. Relative Light Output vs. Junction Temperature, IF=1.5A
Relative Luminous Flux (%)
120
100
80
60
40
20
0
20
40
60
80
100
120
140
o
Junction Temperature ( C)
Fig \6. Junction Temperature vs. CIE X, Y Shift, IF =1.5A (Warm white)
0.02
CIE(X)
CIE(Y)
Relative Variation
0.01
0.00
-0.01
-0.02
20
40
60
80
100
120
140
o
Junction Temperature ( C)
9
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Product Data Sheet
SDWx7F1C – Chip on Board
Junction Temperature Characteristics
Fig 7. Forward Voltage vs. Junction Temperature, IF=1.5A
56
Forward Voltage (V)
54
52
50
48
46
20
40
60
80
100
120
140
o
Junction Temperature ( C)
10
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Product Data Sheet
SDWx7F1C – Chip on Board
Ambient Temperature Characteristics
Fig 8. Maximum Forward Current vs. Ambient Temperature, T j(max.)=125℃, IF=3A
3.5
Maximum Current (A)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
20
40
60
80
100
120
o
Surface Temperature ( C)
11
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Product Data Sheet
SDWx7F1C – Chip on Board
Product Nomenclature
Table 4. Part Numbering System : X1X2X3 X4X5 X6X7 X8
Part Number Code
Description
Part Number
Value
X1
Company
S
X2
Package series
D
X3X4
Color Specification
W0
CRI 70
W8
CRI 80
X5
Series number
7
X6
Lens type
F
Flat
X7
PCB type
1
PCB
X8
Revision number
C
New COB type
Table 5. Lot Numbering System : Y1Y2Y3Y4Y5Y6 – Y7Y8Y9Y10 – Y11Y12Y13
Lot Number Code
Description
Y1Y 2
Year
Y3Y 4
Month
Y5Y 6
Day
Y7Y8Y 9Y10
Mass order
Y11Y 12Y13
Tray No.
Lot Number
12
Value
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Product Data Sheet
SDWx7F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram
0.42
Y
0.39
0.36
0.33
0.33
0.36
0.39
0.42
0.45
0.48
X
13
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Product Data Sheet
SDWx7F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, T j=25℃, IF=1.5A
0.38
4700K
5000K
C1
5300K
C0
0.36
5600K
Y
B1
C2
6000K
0.34
B0
B3
B2
B5
C3
C5
C4
B4
0.32
0.32
0.34
0.36
X
B0
B1
B2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3207
0.3462
0.3292
0.3539
0.3212
0.3389
0.3212
0.3389
0.3293
0.3461
0.3217
0.3316
0.3293
0.3461
0.3373
0.3534
0.3293
0.3384
0.3292
0.3539
0.3376
0.3616
0.3293
0.3461
B3
B4
B5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3293
0.3461
0.3217
0.3316
0.3293
0.3384
0.3293
0.3384
0.3222
0.3243
0.3294
0.3306
0.3369
0.3451
0.3294
0.3306
0.3366
0.3369
0.3373
0.3534
0.3293
0.3384
0.3369
0.3451
C0
C1
C2
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3376
0.3616
0.3463
0.3687
0.3373
0.3534
0.3373
0.3534
0.3456
0.3601
0.3369
0.3451
0.3456
0.3601
0.3539
0.3669
0.3448
0.3514
0.3463
0.3687
0.3552
0.3760
0.3456
0.3601
C3
C4
C5
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3456
0.3601
0.3369
0.3451
0.3448
0.3514
0.3448
0.3514
0.3366
0.3369
0.3440
0.3428
0.3526
0.3578
0.3440
0.3428
0.3514
0.3487
0.3539
0.3669
0.3448
0.3514
0.3526
0.3578
14
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Product Data Sheet
SDWx7F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, T j=25℃, IF=1.5A
3700K
0.40
4000K
E22
4200K
E21 E11
4500K
0.38
Y
E10
D22
4700K
E24
D21 D11
E23
D10
0.36
D24
D23
0.34
0.34
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
0.36
0.38
0.40
X
3-STEP
4-STEP
D10
E10
D11
E11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3589
0.3685
0.3764
0.3713
0.3560
0.3557
0.3746
0.3689
0.3665
0.3742
0.3793
0.3828
0.3580
0.3697
0.3784
0.3841
0.3637
0.3622
0.3890
0.3887
0.3681
0.3771
0.3914
0.3922
0.3573
0.3579
0.3854
0.3768
0.3645
0.3618
0.3865
0.3762
ANSI
D21
D22
D23
D24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3528
0.3599
0.3628
0.3732
0.3601
0.3587
0.3511
0.3466
0.3548
0.3736
0.3641
0.3805
0.3645
0.3618
0.3528
0.3599
0.3641
0.3805
0.3736
0.3874
0.3663
0.3699
0.3570
0.3631
0.3628
0.3732
0.3703
0.3728
0.3703
0.3728
0.3560
0.3558
0.3580
0.3697
0.3663
0.3699
0.3670
0.3578
0.3601
0.3587
0.3570
0.3631
0.3681
0.3771
0.3590
0.3521
0.3590
0.3521
E21
E22
E23
E24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.3703
0.3726
0.3890
0.3842
0.3670
0.3578
0.3784
0.3647
0.3736
0.3874
0.3914
0.3922
0.3703
0.3726
0.3806
0.3725
0.3871
0.3959
0.3849
0.3881
0.3765
0.3765
0.3865
0.3762
0.3849
0.3881
0.3871
0.3959
0.3746
0.3689
0.3890
0.3842
0.3784
0.3841
0.4006
0.4044
0.3806
0.3725
0.3952
0.3880
0.3765
0.3765
0.3952
0.3880
0.3784
0.3647
0.3898
0.3716
15
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Product Data Sheet
SDWx7F1C – Chip on Board
Color Bin Structure
CIE Chromaticity Diagram, T j=25℃, IF=1.5A
0.44
3000K
0.42
3500K
0.40
H22
H11
G22
G21
F22
3700K
Y
H21
2100K
2600K
2700K
2900K
H10
G11
G10
F21
F11
H24
H23
F10
G24
G23
F24
0.38
F23
ANSI
MacAdam 3-STEP
MacAdam 4-STEP
0.36
0.38
0.40
0.42
0.44
0.46
0.48
X
3-STEP
F10
4-STEP
G10
H10
F11
G11
H11
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4006
0.3829
0.4267
0.3946
0.4502
0.4020
0.3981
0.3800
0.4243
0.3922
0.4477
0.3998
0.4051
0.3954
0.4328
0.4079
0.4576
0.4158
0.4040
0.3966
0.4324
0.4100
0.4575
0.4182
0.4159
0.4007
0.4422
0.4113
0.4667
0.4180
0.4186
0.4037
0.4451
0.4145
0.4697
0.4211
0.4108
0.3878
0.4355
0.3977
0.4588
0.4041
0.4116
0.3865
0.4361
0.3964
0.4591
0.4025
ANSI
F21
F22
F23
F24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4148
0.4090
0.4013
0.3887
0.4223
0.3990
0.4299
0.4165
0.3996
0.4015
0.3943
0.3853
0.4153
0.3955
0.4148
0.4090
0.3943
0.3853
0.3889
0.3690
0.4116
0.3865
0.4113
0.4002
0.4013
0.3887
0.4018
0.3752
0.4049
0.3833
0.4186
0.4037
0.4040
0.3966
0.4049
0.3833
0.4018
0.3752
0.4153
0.3955
0.4113
0.4002
0.3981
0.3800
0.4147
0.3814
0.4223
G21
G22
G23
0.3990
G24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4223
0.3990
0.4406
0.4055
0.4147
0.3814
0.4259
0.3853
0.4299
0.4165
0.4451
0.4145
0.4223
0.3990
0.4302
0.3943
0.4430
0.4212
0.4387
0.4122
0.4284
0.4011
0.4361
0.3964
0.4387
0.4122
0.4430
0.4212
0.4243
0.3922
0.4406
0.4055
0.4324
0.4100
0.4562
0.4260
0.4302
0.3943
0.4468
0.4077
0.4284
0.4011
0.4468
0.4077
0.4259
0.3853
0.4373
H21
H22
H23
0.3893
H24
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
CIE x
CIE y
0.4468
0.4077
0.4644
0.4118
0.4373
0.3893
0.4483
0.3919
0.4562
0.4260
0.4697
0.4211
0.4468
0.4077
0.4534
0.4012
0.4687
0.4289
0.4636
0.4197
0.4526
0.4090
0.4591
0.4025
0.4636
0.4197
0.4687
0.4289
0.4477
0.3998
0.4644
0.4118
0.4575
0.4182
0.4810
0.4319
0.4534
0.4012
0.4703
0.4132
0.4526
0.4090
0.4703
0.4132
0.4483
0.3919
0.4593
0.3944
16
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Product Data Sheet
SDWx7F1C – Chip on Board
Color Bin Structure
Table 6. Bin Code description
Luminous Flux (lm)
@ IF=1.5A
Part Number
Bin Code
Min.
Max.
N3
11000
12300
O1
12300
13600
N1
8800
9800
N2
9800
11000
N3
11000
12600
Typical Forward Voltage (V)
@ IF=1.5A
Color
Chromaticity
Coordinate
@ IF=1.5A
SDW07F1C
SDW87F1C
Bin Code
Min.
Max.
J
51.5
55.5
J
51.5
55.5
Refer to page.
13 ~ 16
Available ranks
Part
Number
CCT
CIE
LF rank
VF rank
5300~6000K
B
N1
N2
N3
O1
J
4700~5300K
C
N1
N2
N3
O1
J
4200~4700K
D
N1
N2
N3
O1
J
3700~4200K
E
N1
N2
N3
O1
J
5300~6000K
B
N1
N2
N3
O1
J
4700~5300K
C
N1
N2
N3
O1
J
4200~4700K
D
N1
N2
N3
O1
J
3700~4200K
E
N1
N2
N3
O1
J
3200~3700K
F
N1
N2
N3
O1
J
2900~3200K
G
N1
N2
N3
O1
J
2600~2900K
H
N1
N2
N3
O1
J
SDW07F1C
SDW87F1C
Notes :
1.
Star shape [*] means not available now.
17
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Product Data Sheet
SDWx7F1C – Chip on Board
Mechanical Dimensions
Circuit
Notes :
1.
2.
3.
All dimensions are in millimeters.
Scale : none
Undefined tolerance is ±0.3mm
18
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Product Data Sheet
SDWx7F1C – Chip on Board
Packaging Specification
Notes :
1.
2.
3.
Quantity : 15pcs/Tray
All dimensions are in millimeters (tolerance : ±0.3)
Scale none
19
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Product Data Sheet
SDWx7F1C – Chip on Board
Packaging Specification
Notes :
(1) Heat Sealed after packing (Use Zipper Bag)
(2) Quantity : min 8Tray(120pcs) ~ max 20Tray(300pcs) /Bag
20
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Product Data Sheet
SDWx7F1C – Chip on Board
Handling of Silicone Resin for LEDs
(1) During processing, mechanical stress on the surface should be minimized as much as possible.
Sharp objects of all types should not be used to pierce the sealing compound.
(2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs
without a silicone sealant, since the surface can also become scratched.
(3) Silicone differs from materials conventionally used for the manufacturing of LEDs.
These conditions must be considered during the handling of such devices. Compared to standard
encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As
mentioned previously, the increased sensitivity to dust requires special care during processing.
In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning
solution must be applied to the surface after the soldering of wire.
(4) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are
used, it must be assured that these solvents do not dissolve the package or resin.
Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED.
(5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this
product with acid or sulfur material in sealed space.
(6) Avoid leaving fingerprints on silicone resin parts.
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Product Data Sheet
SDWx7F1C – Chip on Board
Precaution for Use
(1) Storage
To avoid the moisture penetration, we recommend storing Power LEDs in a dry box with a
desiccant.
The recommended storage temperature range is 5C to 30C and a maximum humidity of 50%.
(2) Use Precaution after Opening the Packaging. Pay attention to the following:
a. Recommend conditions after opening the package
- Sealing
- Temperature : 5 ~ 40℃ Humidity : less than RH30%
b. If the package has been opened more than 4 week or the color of the desiccant changes.
(3) For manual soldering
Seoul Semiconductor recommends the soldering condition
(ZC series product is not adaptable to reflow process)
a. Use lead-free soldering
b. Soldering should be implemented using a soldering equipment at temperature lower than 350°C.
c. Before proceeding the next step, product temperature must be stabilized at room temperature.
(4) Components should not be mounted on warped (non coplanar) portion of PCB.
(5) Radioactive exposure is not considered for the products listed here in.
(6) It is dangerous to drink the liquid or inhale the gas generated by such products when chemically
disposed of.
(7) This device should not be used in any type of fluid such as water, oil, organic solvent and etc.
When washing is required, IPA (Isopropyl Alcohol) should be used.
(8) When the LEDs are in operation the maximum current should be decided after measuring the
package temperature.
(9) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more
after being shipped from Seoul Semiconductor,
a sealed container with vacuum atmosphere should be used for storage.
(10) The appearance and specifications of the product may be modified for improvement without
notice.
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Product Data Sheet
SDWx7F1C – Chip on Board
Precaution for Use
(11) Long time exposure of sun light or occasional UV exposure will cause silicone discoloration.
(12) Attaching LEDs, do not use adhesive that outgas organic vapor.
(13) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the
reverse voltage is applied to LED, migration can be generated resulting in LED damage.
(14) Please do not touch any of the circuit board, components or terminals with bare hands or metal
while circuit is electrically active.
(15) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures
can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic
energy. The result can be a significant loss of light output from the fixture. Knowledge of the
properties of the materials selected to be used in the construction of fixtures can help prevent
these issues.
(16) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is
a list of suggestions that Seoul Semiconductor purposes to minimize these effects.
a. ESD (Electro Static Discharge)
Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come
into contact. While most ESD events are considered harmless, it can be an expensive problem in
many industrial environments during production and storage. The damage from ESD to an LEDs may
cause the product to demonstrate unusual characteristics such as:
- Increase in reverse leakage current lowered turn-on voltage
- Abnormal emissions from the LED at low current
The following recommendations are suggested to help minimize the potential for an ESD event.
One or more recommended work area suggestions:
- Ionizing fan setup
- ESD table/shelf mat made of conductive materials
- ESD safe storage containers
One or more personnel suggestion options:
- Antistatic wrist-strap
- Antistatic material shoes
- Antistatic clothes
Environmental controls:
- Humidity control (ESD gets worse in a dry environment)
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Product Data Sheet
SDWx7F1C – Chip on Board
Precaution for Use
b. EOS (Electrical Over Stress)
Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is
subjected to a current or voltage that is beyond the maximum specification limits of the device.
The effects from an EOS event can be noticed through product performance like:
- Changes to the performance of the LED package
(If the damage is around the bond pad area and since the package is completely encapsulated
the package may turn on but flicker show severe performance degradation.)
- Changes to the light output of the luminaire from component failure
- Components on the board not operating at determined drive power
Failure of performance from entire fixture due to changes in circuit voltage and current across total
circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed
to electrical overstress as the failure modes have been investigated to vary, but there are some
common signs that will indicate an EOS event has occurred:
- Damaged may be noticed to the bond wires (appearing similar to a blown fuse)
- Damage to the bond pads located on the emission surface of the LED package
(shadowing can be noticed around the bond pads while viewing through a microscope)
- Anomalies noticed in the encapsulation and phosphor around the bond wires.
- This damage usually appears due to the thermal stress produced during the EOS event.
c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing:
- A surge protection circuit
- An appropriately rated over voltage protection device
- A current limiting device
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Product Data Sheet
SDWx7F1C – Chip on Board
Company Information
Published by
Seoul Semiconductor © 2013 All Rights Reserved.
Company Information
Seoul Semiconductor (SeoulSemicon.com) manufacturers and packages a wide selection of light
emitting diodes (LEDs) for the automotive, general illumination/lighting, appliance, signage and back
lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000
patents globally, while offering a wide range of LED technology and production capacity in areas such
as “nPola”, deep UV LEDs, "Acrich", the world’s first commercially produced AC LED, and "Acrich
MJT - Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad
product portfolio includes a wide array of package and device choices such as Acrich, high-brightness
LEDs, mid-power LEDs, side-view LEDs, through-hole type LED lamps, custom displays, and sensors.
The company is vertically integrated from epitaxial growth and chip manufacture in it’s fully owned
subsidiary, Seoul Viosys, through packaged LEDs and LED modules in three Seoul Semiconductor
manufacturing facilities. Seoul Viosys also manufactures a wide range of unique deep-UV
wavelength devices.
Legal Disclaimer
Information in this document is provided in connection with Seoul Semiconductor products. With
respect to any examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party. The appearance and specifications of the product can be changed
to improve the quality and/or performance without notice.
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