Product Data Sheet SDW81F1DY – Chip on Board Enable High Flux and Cost Efficient System Z Power Chip on board – ZC series SDW81F1DY LM-80 MacAdam 3-Step RoHS Product Brief Description Features and Benefits • The ZC series are LED arrays which provide High Flux and High Efficacy. • Especially it is designed for easy assembly of lighting fixtures by eliminating reflow soldering process. • It‘s thermal management is better than other power LED solutions with wide Metal area. • • • • • • • • • • ZC series are ideal light sources for general lighting applications including Replacement Lamps, Industrial & Commercial Lightings and other high lumen required applications. Size 13.5mm * 13.5mm Power dissipation 4.7 ~ 9.2W Wide CCT range with CRI70~90 Forward current typ 36.2V Maximum Current 230mA MacAdam 3-step binning Uniformed Shadow Excellent Thermal management RoHS compliant Key Applications • Replacement Lamps – Bulb, MR16, PAR Commercial – Downlight Industrial – Bay lighting Residential • • • Table 1. Product Selection Table CCT [K] Part Number SDW81F1DY Rev3.0, Dec 2, 2015 Color Min. Typ. Max. Cool White 4700 - 6000 Neutral White 3700 - 4700 Warm White 2600 - 3700 1 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 6 • Color Bin Structure 11 • Mechanical Dimensions 16 • Packaging Specification 17 • Product Nomenclature (Labeling Information) 19 • Handling of Silicone Resin for LEDs 20 • Precaution For Use 21 • Company Information 24 Rev3.0, Dec 2, 2015 2 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Performance Characteristics Table 2. Electro Optical Characteristics, Tj=25ºC CRI [5], Ra Viewing Angle (degrees) 2Θ ½ 230mA* Min. Typ. 36.2 38.5 80 120 1033 36.2 38.5 80 120 630 1021 36.2 38.5 80 120 4000 624 1012 36.2 38.5 80 120 3500 618 1002 36.2 38.5 80 120 3000 615 997 36.2 38.5 80 120 2700 603 977 36.2 38.5 80 120 Typical Luminous Flux [2], ФV [3] (lm) Typical Forward Voltage, VF [4] (V) Typ. 130mA 230mA* 130mA 5600 631 1023 5000 637 4500 CCT (K) [1] Part Number SDW81F1DY Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is ±3% on forward voltage measurements. (5) Tolerance is ±2 on CRI measurements. * No values are provided by real measurement. Only for reference purpose. Rev3.0, Dec 2, 2015 3 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Performance Characteristics Table 3. Electro Optical Characteristics, Tj=85ºC CCT (K) [1] Typical Luminous Flux [2] ФV [3] (lm) Typical Forward Voltage (Vf) [4] Typ. 130mA* 130mA* 5600 568 35.0 5000 573 35.0 4500 567 35.0 4000 562 35.0 3500 556 35.0 3000 554 35.0 2700 542 35.0 Part Number SDW81F1DY Notes : (1) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (2) Seoul Semiconductor maintains a tolerance of ±7% on flux and power measurements. (3) ФV is the total luminous flux output as measured with an integrating sphere. (4) Tolerance is ±3% on forward voltage measurements. (5) Tolerance is ±2 on CRI measurements. * No values are provided by real measurement. Only for reference purpose. Rev3.0, Dec 2, 2015 4 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Performance Characteristics Table 4. Absolute Maximum Characteristics, Tj = 25ºC Value Parameter Symbol Unit Min. Typ. Max. Forward Current IF - 0.13 0.23 A Power Dissipation Pd - 4.7 9.2 W Junction Temperature Tj - - 140 ºC Operating Temperature Topr -40 - 85 ºC Surface Temperature TS - - 100 ºC Storage Temperature Tstg -40 - 100 ºC Thermal resistance (J to S) [1] RthJS - 1.8 - K/W ESD Sensitivity(HBM) - Class 3A JESD22-A114-E Notes : (1) Thermal resistance : RthJS (Junction / solder) • LED’s properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. Care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. • All measurements were made under the standardized environment of Seoul Semiconductor. Rev3.0, Dec 2, 2015 5 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Characteristics Graph Fig 1. Color Spectrum, Tj=25℃, IF=130mA 120 CRI80(5000K) CRI80(4000K) CRI80(3000K) Relative Intensity(%) 100 80 60 40 20 0 400 450 500 550 600 650 700 750 800 50 75 100 Wavelength (nm) Fig 2. Radiant pattern, Tj=25℃, IF=130mA Relative Intensity (%) 100 75 50 25 0 -100 -75 -50 -25 0 25 Angle (Degrees) Rev3.0, Dec 2, 2015 6 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Characteristics Graph Fig 3. Forward Voltage vs. Forward Current, Tj=25℃ 0.25 Current (A) 0.20 0.15 0.10 0.05 0.00 20 25 30 35 40 45 0.20 0.25 Foward Voltage (V) Fig 4. Forward Current vs. Relative Luminous Flux, T j=25℃ Relative Luminous Flux (%) 200 160 120 80 40 0 0.00 0.05 0.10 0.15 Foward Current (A) Rev3.0, Dec 2, 2015 7 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Characteristics Graph Fig 5. Junction Temperature vs. Relative Light Output, IF=130mA Relative luminous flux (%) 120 100 80 60 40 20 0 25 50 75 100 125 150 o Junction Temperature ( C) Fig 6. Junction Temperature vs. Forward Voltage, IF=130mA 0.5 Foward Voltage (V) 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 25 50 75 100 125 150 o Junction Temperature( C) Rev3.0, Dec 2, 2015 8 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Characteristics Graph Fig 7. Junction Temperature vs. CIE X, Y Shift, IF=130mA 0.03 CIE X(5000K) CIE Y(5000K) Relative Variation 0.02 0.01 0.00 -0.01 -0.02 -0.03 20 40 60 80 100 120 140 o Junction Temperature ( C) 0.03 CIE X(3000K) CIE Y(3000K) Relative Variation 0.02 0.01 0.00 -0.01 -0.02 -0.03 20 40 60 80 100 120 140 o Junction Temperature ( C) Rev3.0, Dec 2, 2015 9 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Characteristics Graph Fig 8. Surface Temperature vs. Maximum Forward Current, Tj(max.)=140℃ Maximum Current (A) 0.3 0.2 0.1 0.0 20 40 60 80 100 120 o Surface Temperature ( C) Rev3.0, Dec 2, 2015 10 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Color Bin Structure Table 7. Bin Code description Luminous Flux (lm) @ IF = 130mA Part Number Bin Code Min. Max. A1 440 490 A2 490 570 B1 570 635 B2 635 700 Color Chromaticity Coordinate @ IF = 130mA Typical Forward Voltage (V) @ IF = 130mA Bin Code Min. Max. E 34 38 F 38 40 Refer to page. 12-15 SDW81F1DY Available ranks Table 8. Ordering Information(Bin Code) Part Number SDW81F1DY Rev3.0, Dec 2, 2015 CCT CIE LF rank 5300~6000K B A1 A2 B1 B2 E F 4700~5300K C A1 A2 B1 B2 E F 4200~4700K D A1 A2 B1 B2 E F 3700~4200K E A1 A2 B1 B2 E F 3200~3700K F A1 A2 B1 B2 E F 2900~3200K G A1 A2 B1 B2 E F 2600~2900K H A1 A2 B1 B2 E F 11 VF rank www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Color Bin Structure CIE Chromaticity Diagram 0.42 Y 0.39 0.36 0.33 0.33 0.36 0.39 0.42 0.45 0.48 X Rev3.0, Dec 2, 2015 12 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Color Bin Structure CIE Chromaticity Diagram, Tj=25℃, IF=130mA 0.38 4700K 5000K C1 5300K C0 0.36 5600K B1 C2 B0 B3 C4 B2 B5 Y 6000K 0.34 C3 C5 B4 0.32 0.32 0.34 0.36 X B0 B1 B2 CIE x CIE y CIE x CIE y CIE x CIE y 0.3207 0.3462 0.3292 0.3539 0.3212 0.3389 0.3212 0.3389 0.3293 0.3461 0.3217 0.3316 0.3293 0.3461 0.3373 0.3534 0.3293 0.3384 0.3292 0.3539 0.3376 0.3616 0.3293 0.3461 B3 B4 B5 CIE x CIE y CIE x CIE y CIE x CIE y 0.3293 0.3461 0.3217 0.3316 0.3293 0.3384 0.3293 0.3384 0.3222 0.3243 0.3294 0.3306 0.3369 0.3451 0.3294 0.3306 0.3366 0.3369 0.3373 0.3534 0.3293 0.3384 0.3369 0.3451 C0 C1 C2 CIE x CIE y CIE x CIE y CIE x CIE y 0.3376 0.3616 0.3463 0.3687 0.3373 0.3534 0.3373 0.3534 0.3456 0.3601 0.3369 0.3451 0.3456 0.3601 0.3539 0.3669 0.3448 0.3514 0.3463 0.3687 0.3552 0.3760 0.3456 0.3601 C3 C4 C5 CIE x CIE y CIE x CIE y CIE x CIE y 0.3456 0.3601 0.3369 0.3451 0.3448 0.3514 0.3448 0.3514 0.3366 0.3369 0.3440 0.3428 0.3526 0.3578 0.3440 0.3428 0.3514 0.3487 0.3539 0.3669 0.3448 0.3514 0.3526 0.3578 Rev3.0, Dec 2, 2015 13 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Color Bin Structure CIE Chromaticity Diagram, Tj=25℃, IF=130mA 3700K 0.40 4000K E22 4200K E21 E11 4500K 0.38 Y E10 D22 4700K E24 D21 D11 E23 D10 0.36 D24 D23 0.34 0.34 ANSI MacAdam 3-STEP MacAdam 4-STEP 0.36 0.38 0.40 X 3-STEP 4-STEP D10 E10 D11 E11 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.3589 0.3685 0.3764 0.3713 0.3560 0.3557 0.3746 0.3689 0.3665 0.3742 0.3793 0.3828 0.3580 0.3697 0.3784 0.3841 0.3637 0.3622 0.3890 0.3887 0.3681 0.3771 0.3914 0.3922 0.3573 0.3579 0.3854 0.3768 0.3645 0.3618 0.3865 0.3762 ANSI D21 D22 D23 D24 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.3528 0.3599 0.3628 0.3732 0.3601 0.3587 0.3511 0.3466 0.3548 0.3736 0.3641 0.3805 0.3645 0.3618 0.3528 0.3599 0.3641 0.3805 0.3736 0.3874 0.3663 0.3699 0.3570 0.3631 0.3628 0.3732 0.3703 0.3728 0.3703 0.3728 0.3560 0.3558 0.3580 0.3697 0.3663 0.3699 0.3670 0.3578 0.3601 0.3587 0.3570 0.3631 0.3681 0.3771 0.3590 0.3521 0.3590 0.3521 E21 E22 E23 E24 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.3703 0.3726 0.3890 0.3842 0.3670 0.3578 0.3784 0.3647 0.3736 0.3874 0.3914 0.3922 0.3703 0.3726 0.3806 0.3725 0.3871 0.3959 0.3849 0.3881 0.3765 0.3765 0.3865 0.3762 0.3849 0.3881 0.3871 0.3959 0.3746 0.3689 0.3890 0.3842 0.3784 0.3841 0.4006 0.4044 0.3806 0.3725 0.3952 0.3880 0.3765 0.3765 0.3952 0.3880 0.3784 0.3647 0.3898 0.3716 Rev3.0, Dec 2, 2015 14 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Color Bin Structure CIE Chromaticity Diagram, Tj=25℃, IF=130mA 0.44 3000K 0.42 3500K 0.40 H22 H11 G22 G21 F22 3700K Y H21 3200K 2600K 2700K 2900K H10 G11 G10 F21 F11 F10 G24 G23 H24 H23 F24 0.38 F23 ANSI MacAdam 3-STEP MacAdam 4-STEP 0.36 0.38 0.40 0.42 0.44 0.46 0.48 X 3-STEP F10 4-STEP G10 H10 F11 G11 H11 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.4006 0.3829 0.4267 0.3946 0.4502 0.4020 0.3981 0.3800 0.4243 0.3922 0.4477 0.3998 0.4051 0.3954 0.4328 0.4079 0.4576 0.4158 0.4040 0.3966 0.4324 0.4100 0.4575 0.4182 0.4159 0.4007 0.4422 0.4113 0.4667 0.4180 0.4186 0.4037 0.4451 0.4145 0.4697 0.4211 0.4108 0.3878 0.4355 0.3977 0.4588 0.4041 0.4116 0.3865 0.4361 0.3964 0.4591 0.4025 ANSI F21 F22 F23 F24 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.4148 0.3996 0.3943 0.4013 0.4040 0.4113 0.4090 0.4015 0.3853 0.3887 0.3966 0.4002 0.4013 0.3943 0.3889 0.4018 0.4049 0.3981 0.3887 0.3853 0.3690 0.3752 0.3833 0.3800 0.4223 0.4153 0.4116 0.4049 0.4018 0.4147 0.3990 0.3955 0.3865 0.3833 0.3752 0.3814 0.4299 0.4148 0.4113 0.4186 0.4153 0.4223 0.4165 0.4090 0.4002 0.4037 0.3955 0.3990 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.4223 0.4299 0.4430 0.4387 0.4324 0.4284 0.3990 0.4165 0.4212 0.4122 0.4100 0.4011 0.4406 0.4451 0.4387 0.4430 0.4562 0.4468 0.4055 0.4145 0.4122 0.4212 0.4260 0.4077 0.4147 0.4223 0.4284 0.4243 0.4302 0.4259 0.3814 0.3990 0.4011 0.3922 0.3943 0.3853 0.4259 0.4302 0.4361 0.4406 0.4468 0.4373 0.3853 0.3943 0.3964 0.4055 0.4077 0.3893 CIE x CIE y CIE x CIE y CIE x CIE y CIE x CIE y 0.4468 0.4562 0.4687 0.4636 0.4575 0.4526 0.4077 0.4260 0.4289 0.4197 0.4182 0.4090 0.4644 0.4697 0.4636 0.4687 0.4810 0.4703 0.4118 0.4211 0.4197 0.4289 0.4319 0.4132 0.4373 0.4468 0.4526 0.4477 0.4534 0.4483 0.3893 0.4077 0.4090 0.3998 0.4012 0.3919 0.4483 0.4534 0.4591 0.4644 0.4703 0.4593 0.3919 0.4012 0.4025 0.4118 0.4132 0.3944 G21 G22 H21 G23 H22 Rev3.0, Dec 2, 2015 G24 H23 15 H24 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Mechanical Dimensions Circuit Cathode X 12 S1 Ts Anode Notes : (1) All dimensions are in millimeters. (2) Scale : none (3) Undefined tolerance is ±0.2mm Rev3.0, Dec 2, 2015 16 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Packaging Specification Notes : 1. 2. 3. Quantity : 30pcs/Tray All dimensions are in millimeters (tolerance : ±0.3) Scale none Rev3.0, Dec 2, 2015 17 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Packaging Specification Notes : (1) Heat Sealed after packing (Use Zipper Bag) (2) Quantity : 3Tray(90pcs) /Bag Rev3.0, Dec 2, 2015 18 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Product Nomenclature Table 5. Part Numbering System : X1X2X3 X4X5 X6X7 X8 X9 Part Number Code Description Part Number Value X1 Company S SSC X2 Package series D COB X3X4 Color Specification W8 CRI 80 X5 Series number 1 X6 Lens type F Flat X7 PCB type 1 PCB X8 Revision number D X9 Customer Type Y Table 6. Lot Numbering System : Y1Y2Y3Y4Y5Y6 – Y7Y8Y9Y10 – Y11Y12Y13 Lot Number Code Description Y1Y2 Year Y3Y4 Month Y5Y6 Day Y7Y8Y9Y10 Mass order Y11Y12Y13 Tray No. Rev3.0, Dec 2, 2015 Lot Number 19 Value www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of wire. (4) Seoul Semiconductor suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (5) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (6) Avoid leaving fingerprints on silicone resin parts. Rev3.0, Dec 2, 2015 20 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Precaution for Use (1) Storage To avoid the moisture penetration, we recommend storing Power LEDs in a dry box with a desiccant. (2) For manual soldering Seoul Semiconductor recommends the soldering condition (ZC series product is not adaptable to reflow process) a. Use lead-free soldering b. Soldering should be implemented using a soldering equipment at temperature lower than 350°C. c. Before proceeding the next step, product temperature must be stabilized at room temperature. (3) Components should not be mounted on warped (non coplanar) portion of PCB. (4) Radioactive exposure is not considered for the products listed here in. (5) It is dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (6) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (7) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (8) The appearance and specifications of the product may be modified for improvement without notice. (9) Long time exposure of sun light or occasional UV exposure will cause silicone discoloration. (10) Attaching LEDs, do not use adhesive that outgas organic vapor. (11) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (12) Please do not touch any of the circuit board, components or terminals with bare hands or metal while circuit is electrically active. Rev3.0, Dec 2, 2015 21 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. Ⅰ. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev3.0, Dec 2, 2015 22 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Precaution for Use Ⅱ. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. Ⅲ. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev3.0, Dec 2, 2015 23 www.seoulsemicon.com Product Data Sheet SDW81F1DY – Chip on Board Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev3.0, Dec 2, 2015 24 www.seoulsemicon.com