Product Data Sheet SAW8LH0A – Acrich MJT 5050 Superior high Flux for High Current System Acrich MJT 5050 SAW8LH0A (Neutral, Warm) RoHS Product Brief Description Features and Benefits • This White Colored surface-mount LED comes in standard package dimension. Package Size : 5.0x5.0x0.65mm • The MJT series of LEDs are designed for AC & DC(High Voltage) operation and high flux output applications. • • • • • • • It incorporates state of the art SMD design and low thermal resistant material. • Super high Flux output and high Luminance Designed for high voltage operation High Color Quality with CRI Min.80(R9>0) SMT solderable Lead Free product RoHS compliant Key Applications • • • • The MJT is ideal light sources for general illumination applications and custom designed solutions. General lighting Architectural lighting LED Bulbs Decorative / Pathway lighting Table 1. Product Selection Table CCT Part Number Color Min. Typ. Max. Warm White 2600K 3000K 3700K Neutral White 3700K 4200K 4700K SAW8LH0A Rev2.1, Sep 9, 2015 1 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Table of Contents Index • Product Brief 1 • Table of Contents 2 • Performance Characteristics 3 • Characteristics Graph 4 • Color Bin Structure 10 • Mechanical Dimensions 13 • Recommended Solder Pad 14 • Reflow Soldering Characteristics 15 • Emitter Tape & Reel Packaging 16 • Product Nomenclature 18 • Handling of Silicone Resin for LEDs 19 • Precaution For Use 20 • Company Information 23 Rev2.1, Sep 9, 2015 2 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Performance Characteristics Table 2. Characteristics, IF=20mA, Ta=25ºC Value Parameter Symbol Unit Min. Typ. Max. Φv[2] 136 155 - lm CCT 2600 - 4700 K CRI[4] Ra 80 - - - Forward Voltage VF 60 63 68 V Power Dissipation Pd - 1.26 - W 2Θ1/2 - 120 - deg. Rθj-s - 6.0 - K/W Luminous Flux[1] Correlated Color Temperature[3] Viewing Angle Thermal resistance (J to S)[5] ESD Sensitivity(HBM) - Class 3A JESD22-A114-E Table 3. Electro – Optical Characteristics, Ta=25ºC IF [mA] VF [V] Power [W] Φv [lm] lm/W 10 60.3 0.60 80.2 133.7 20 (Typ.) 63.8 1.28 150.2 117.3 30 66.7 2.00 212.5 106.3 40 69.3 2.77 269.3 97.2 50 71.6 3.58 321.4 89.8 60 73.6 4.42 369.7 83.6 Table 4. Absolute Maximum Ratings Parameter Symbol Value Unit Forward Current IF 60 mA Power Dissipation PD 4.5 W Junction Temperature Tj 125 ºC Operating Temperature Topr -30 ~ + 100 ºC Storage Temperature Tstg -40 ~ + 100 ºC Notes : (1) Seoul Semiconductor maintains a tolerance of 7% on flux and power measurements. (2) ФV is the total luminous flux output as measured with an integrating sphere. (3) Correlated Color Temperature is derived from the CIE 1931 Chromaticity diagram. Color coordinate : 0.005, CCT 5% tolerance. (4) Tolerance is 2.0 on CRI measurements. (5) Thermal resistance: RthJS (Junction to Solder) • Calculated performance values are for reference only. • All measurements were made under the standardized environment of Seoul Semiconductor. • Thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. Rev2.1, Sep 9, 2015 3 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 1. Color Spectrum, Ta=25℃, IF=20mA Relative Spectral Power Distribution [a.u.] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 400 500 600 700 800 Wavelength(nm) Fig 2. Radiant pattern, Ta=25℃, IF=20mA 1.2 Relative Luminous Flux 1.0 0.8 0.6 0.4 0.2 0.0 -90 -60 -30 0 30 60 90 Angle [deg.] Rev2.1, Sep 9, 2015 4 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 3. Forward Voltage vs. Forward Current , T s=25℃ 70 Forward Current [IF, mA] 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 Forward Voltage [VF, V] Fig 4. Forward Current vs. Relative Luminous Flux, T a=25℃ Relative luminous flux [a.u.] 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 10 20 30 40 50 60 70 Forward Current [mA] Rev2.1, Sep 9, 2015 5 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 5. Forward Current vs. CIE X, Y Shift , T a=25℃ 0.404 0.402 30mA 10mA 40mA 0.400 CIE Y 20mA 50mA 60mA 0.398 0.396 0.394 0.424 0.426 0.428 0.430 0.432 CIE X Rev2.1, Sep 9, 2015 6 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 6. Relative Light Output vs. Junction Temperature, IF=20mA 1.2 Relative Light Output 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 o Junction Temperature [ C] Fig 7. Relative Forward Voltage vs. Junction Temperature, IF=20mA Relative Forward Voltage [a.u.] 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 o Junction Temperature [ C] Rev2.1, Sep 9, 2015 7 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 8. Junction Temp. vs. CIE X, Y Shift, IF=20mA 0.000 CIE X CIE Y CIE X,Y Shift -0.002 -0.004 -0.006 -0.008 -0.010 -0.012 0 Rev2.1, Sep 9, 2015 25 50 75 100 o Junction Temperature [ C] 8 125 150 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Characteristics Graph Fig 9. Maximum Forward Current vs. Ambient Temperature, T j(max.) = 125℃, IF=60mA 0.07 Forward Current (A) 0.06 0.05 0.04 0.03 0.02 Rth(J-a) = 15 'C/W Rth(J-a) = 20 'C/W Rth(J-a) = 25 'C/W 0.01 0.00 0 25 50 75 100 125 O Ambient Temperature ( C) Rev2.1, Sep 9, 2015 9 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Color Bin Structure Table 5. Bin Code description, Tj=25℃, IF=20mA Luminous Flux (lm) Part Number SAW8LH0A Bin Code Min. Max. V2 136 154 W1 154 177 W2 177 200 Forward Voltage (Vf) Color Chromaticity Coordinate Bin Code Min. Max. A 60 63 B 63 65 C 65 68 Refer to page.11,12 Table 6. Luminous Flux rank distribution CCT CIE Flux Rank 4700 ~ 4200K D V1 W1 W2 4200 ~ 3700K E V1 W1 W2 3700 ~ 3200K F V1 W1 W2 3200 ~ 2900K G V1 W1 W2 2900 ~ 2600K H V1 W1 W2 Available ranks Not yet available ranks Rev2.1, Sep 9, 2015 10 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Color Bin Structure Binning structure graphical representation < IF= 20mA, Ta=25℃ > 0.40 E1 E0 0.38 D1 CIE y D0 D2 0.36 D3 E2 E3 E5 E4 D5 D4 0.34 0.34 0.36 0.38 0.40 CIE x D0 CIE x 0.3548 0.3536 0.3625 0.3641 D1 CIE y 0.3736 0.3646 0.3711 0.3804 CIE x 0.3641 0.3625 0.3714 0.3736 CIE y 0.3711 0.3616 0.3677 0.3775 CIE x 0.3523 0.3511 0.3590 0.3608 CIE y 0.3874 0.3775 0.3855 0.3958 CIE x 0.3869 0.3842 0.3970 0.4006 CIE y 0.3855 0.3751 0.3825 0.3935 CIE x 0.3692 0.3670 0.3783 0.3813 D3 CIE x 0.3625 0.3608 0.3692 0.3714 Rev2.1, Sep 9, 2015 CIE y 0.3555 0.3465 0.3521 0.3616 CIE x 0.3608 0.3590 0.3670 0.3692 CIE y 0.3958 0.3855 0.3935 0.4044 CIE x 0.3714 0.3692 0.3813 0.3842 CIE y 0.3677 0.3578 0.3646 0.3751 CIE x 0.3813 0.3783 0.3898 0.3934 CIE y 0.3616 0.3521 0.3578 0.3677 E2 E4 11 CIE y 0.3646 0.3555 0.3616 0.3711 D5 E1 E3 CIE x 0.3842 0.3813 0.3934 0.3970 CIE x 0.3536 0.3523 0.3608 0.3625 D4 E0 CIE x 0.3736 0.3714 0.3842 0.3869 D2 CIE y 0.3804 0.3711 0.3775 0.3874 CIE y 0.3775 0.3677 0.3751 0.3855 E5 CIE y 0.3751 0.3646 0.3716 0.3825 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Color Bin Structure Binning structure graphical representation < IF= 20mA, Ta=25℃ > 0.44 0.42 G0 CIE y F1 0.40 G3 F3 H4 G5 H3 H2 G2 F0 H1 H0 G1 H5 G4 F2 F5 0.38 F4 0.36 0.38 0.40 0.42 0.44 0.46 0.48 CIE x F0 CIE x 0.3996 0.3960 0.4104 0.4146 F1 CIE y 0.4015 0.3907 0.3978 0.4089 CIE x 0.4146 0.4104 0.4248 0.4299 CIE y 0.3978 0.3865 0.3931 0.4048 CIE x 0.3925 0.3889 0.4017 0.4062 CIE y 0.4165 0.4048 0.4093 0.4212 CIE x 0.4430 0.4374 0.4499 0.4562 CIE y 0.4093 0.3973 0.4015 0.4138 CIE x 0.4198 0.4147 0.4259 0.4317 CIE y 0.4260 0.4138 0.4166 0.4289 CIE x 0.4687 0.4620 0.4740 0.4810 CIE y 0.4166 0.4042 0.4069 0.4194 CIE x 0.4436 0.4373 0.4483 0.4551 F3 CIE x 0.4104 0.4062 0.4198 0.4248 Rev2.1, Sep 9, 2015 CIE y 0.4212 0.4093 0.4138 0.4260 CIE x 0.4248 0.4198 0.4317 0.4374 CIE y 0.3931 0.3814 0.3853 0.3973 CIE x 0.4317 0.4259 0.4373 0.4436 CIE y 0.4289 0.4166 0.4194 0.4319 CIE x 0.4499 0.4436 0.4551 0.4620 CIE y 0.4015 0.3893 0.3919 0.4042 CIE x 0.4551 0.4483 0.4593 0.4666 CIE y 0.3865 0.3751 0.3814 0.3931 G2 CIE y 0.4048 0.3931 0.3973 0.4093 G5 CIE y 0.3973 0.3853 0.3893 0.4015 H2 H4 12 CIE y 0.3907 0.3798 0.3865 0.3978 F5 H1 H3 CIE x 0.4620 0.4551 0.4666 0.4740 CIE x 0.4062 0.4017 0.4147 0.4198 G4 H0 CIE x 0.4562 0.4499 0.4620 0.4687 CIE y 0.3798 0.3690 0.3751 0.3865 G1 G3 CIE x 0.4374 0.4317 0.4436 0.4499 CIE x 0.3960 0.3925 0.4062 0.4104 F4 G0 CIE x 0.4299 0.4248 0.4374 0.4430 F2 CIE y 0.4089 0.3978 0.4048 0.4165 CIE y 0.4138 0.4015 0.4042 0.4166 H5 CIE y 0.4042 0.3919 0.3944 0.4069 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Mechanical Dimensions < Top View > < Bottom View > Cathode < Side view> Cathode Anode < Inner Circuit Diagram> Cathode Anode ESD Protection Device Notes : (1) (2) (3) (4) All dimensions are in millimeters. Scale : none Undefined tolerance is ±0.1mm The appearance and specifications of the product may be changed for improvement without notice. Rev2.1, Sep 9, 2015 13 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Recommended Solder Pad Notes : (1) (2) (3) (4) All dimensions are in millimeters. Scale : none This drawing without tolerances are for reference only Undefined tolerance is ±0.1mm Rev2.1, Sep 9, 2015 14 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Reflow Soldering Characteristics IPC/JEDEC J-STD-020 Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (Tsmax to Tp) 3° C/second max. 3° C/second max. Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (Tsmin to Tsmax) 100 °C 150 °C 60-120 seconds 150 °C 200 °C 60-180 seconds Time maintained above: - Temperature (TL) - Time (tL) 183 °C 60-150 seconds 217 °C 60-150 seconds Peak Temperature (Tp) 215℃ 260℃ Time(tp) within 5°C of actual Peak Temperature 10-30 seconds 20-40 seconds Ramp-down Rate 6 °C/second max. 6 °C/second max. Time 25°C to Peak Temperature 6 minutes max. 8 minutes max. Caution (1) Reflow soldering is recommended not to be done more than two times. In the case of more than 24 hours passed soldering after first, LEDs will be damaged. (2) Repairs should not be done after the LEDs have been soldered. When repair is unavoidable, suitable tools must be used. (3) Die slug is to be soldered. (4) When soldering, do not put stress on the LEDs during heating. (5) After soldering, do not warp the circuit board. Rev2.1, Sep 9, 2015 15 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Emitter Tape & Reel Packaging Notes : (1) Quantity : 7 inch reel type ( 1,800 pcs / Reel ) (2) Cumulative Tolerance : Cumulative Tolerance/10 pitches to be ±0.2mm (3) Adhesion Strength of Cover Tape : Adhesion strength to be 0.1-0.7N when the cover tape is turned off from the carrier tape at the angle of 10º to the carrier tape (4) Package : P/N, Manufacturing data Code No. and quantity to be indicated on a damp proof Package. Rev2.1, Sep 9, 2015 16 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Emitter Tape & Reel Packaging Reel Aluminum Bag Outer Box Rev2.1, Sep 9, 2015 17 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Product Nomenclature Table 7. Part Numbering System : X1X2X3X4X5X6X7X8 Part Number Code Description Part Number Value X1 Company S SSC X2 Acrich LED series A X3X4 Color Specification W8 CRI80 X5 Package series L L series X6 Chip H X7 PCB type 0 Emitter X8 Revision A rev0 Table 8. Lot Numbering System :Y1Y2Y3Y4Y5Y6Y7Y8Y9Y10–Y11Y12Y13Y14Y15Y16Y17 Lot Number Code Description Y1Y2 Year Y3 Month Y4Y5 Day Y6 Top View LED series Y7Y8Y9Y10 Mass order Y11Y12Y13Y14Y15Y16Y17 Internal Number Rev2.1, Sep 9, 2015 Lot Number 18 Value www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Handling of Silicone Resin for LEDs (1) During processing, mechanical stress on the surface should be minimized as much as possible. Sharp objects of all types should not be used to pierce the sealing compound. (2) In general, LEDs should only be handled from the side. By the way, this also applies to LEDs without a silicone sealant, since the surface can also become scratched. (3) When populating boards in SMT production, there are basically no restrictions regarding the form of the pick and place nozzle, except that mechanical pressure on the surface of the resin must be prevented. This is assured by choosing a pick and place nozzle which is larger than the LED’s reflector area. (4) Silicone differs from materials conventionally used for the manufacturing of LEDs. These conditions must be considered during the handling of such devices. Compared to standard encapsulants, silicone is generally softer, and the surface is more likely to attract dust. As mentioned previously, the increased sensitivity to dust requires special care during processing. In cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of components. (5) SSC suggests using isopropyl alcohol for cleaning. In case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. Ultrasonic cleaning is not recommended. Ultrasonic cleaning may cause damage to the LED. (6) Please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (7) Avoid leaving fingerprints on silicone resin parts. Rev2.1, Sep 9, 2015 19 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Precaution for Use (1) Storage To avoid the moisture penetration, we recommend store in a dry box with a desiccant . The recommended storage temperature range is 5℃ to 30℃ and a maximum humidity of RH50%. (2) Use Precaution after Opening the Packaging Use proper SMD techniques when the LED is to be soldered dipped as separation of the lens may affect the light output efficiency. Pay attention to the following: a. Recommend conditions after opening the package - Sealing / Temperature : 5 ~ 40℃ Humidity : less than RH30% b. If the package has been opened more than 4 week(MSL_2a) or the color of the desiccant changes, components should be dried for 10-12hr at 60±5℃ (3) Do not apply mechanical force or excess vibration during the cooling process to normal temperature after soldering. (4) Do not rapidly cool device after soldering. (5) Components should not be mounted on warped (non coplanar) portion of PCB. (6) Radioactive exposure is not considered for the products listed here in. (7) Gallium arsenide is used in some of the products listed in this publication. These products are dangerous if they are burned or shredded in the process of disposal. It is also dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (8) This device should not be used in any type of fluid such as water, oil, organic solvent and etc. When washing is required, IPA (Isopropyl Alcohol) should be used. (9) When the LEDs are in operation the maximum current should be decided after measuring the package temperature. (10) LEDs must be stored properly to maintain the device. If the LEDs are stored for 3 months or more after being shipped from Seoul Semiconductor. A sealed container with a nitrogen atmosphere should be used for storage. (11) The appearance and specifications of the product may be modified for improvement without notice. (12) Long time exposure of sunlight or occasional UV exposure will cause lens discoloration. Rev2.1, Sep 9, 2015 20 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Precaution for Use (13) VOCs (Volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of LEDs and discolor when exposed to heat and photonic energy. The result can be a significant loss of light output from the fixture. Knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) The slug is electrically isolated. (15) Attaching LEDs, do not use adhesives that outgas organic vapor. (16) The driving circuit must be designed to allow forward voltage only when it is ON or OFF. If the reverse voltage is applied to LED, migration can be generated resulting in LED damage. (17) LEDs are sensitive to Electro-Static Discharge (ESD) and Electrical Over Stress (EOS). Below is a list of suggestions that Seoul Semiconductor purposes to minimize these effects. a. ESD (Electro Static Discharge) Electrostatic discharge (ESD) is the defined as the release of static electricity when two objects come into contact. While most ESD events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. The damage from ESD to an LEDs may cause the product to demonstrate unusual characteristics such as: - Increase in reverse leakage current lowered turn-on voltage - Abnormal emissions from the LED at low current The following recommendations are suggested to help minimize the potential for an ESD event. One or more recommended work area suggestions: - Ionizing fan setup - ESD table/shelf mat made of conductive materials - ESD safe storage containers One or more personnel suggestion options: - Antistatic wrist-strap - Antistatic material shoes - Antistatic clothes Environmental controls: - Humidity control (ESD gets worse in a dry environment) Rev2.1, Sep 9, 2015 21 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Precaution for Use b. EOS (Electrical Over Stress) Electrical Over-Stress (EOS) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. The effects from an EOS event can be noticed through product performance like: - Changes to the performance of the LED package (If the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - Changes to the light output of the luminaire from component failure - Components on the board not operating at determined drive power Failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. It is impossible to predict the failure mode of every LED exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an EOS event has occurred: - Damaged may be noticed to the bond wires (appearing similar to a blown fuse) - Damage to the bond pads located on the emission surface of the LED package (shadowing can be noticed around the bond pads while viewing through a microscope) - Anomalies noticed in the encapsulation and phosphor around the bond wires. - This damage usually appears due to the thermal stress produced during the EOS event. c. To help minimize the damage from an EOS event Seoul Semiconductor recommends utilizing: - A surge protection circuit - An appropriately rated over voltage protection device - A current limiting device Rev2.1, Sep 9, 2015 22 www.seoulsemicon.com Product Data Sheet SAW8LH0A – Acrich MJT 5050 Company Information Published by Seoul Semiconductor © 2013 All Rights Reserved. Company Information Seoul Semiconductor (www.SeoulSemicon.com) manufacturers and packages a wide selection of light emitting diodes (LEDs) for the automotive, general illumination/lighting, Home appliance, signage and back lighting markets. The company is the world’s fifth largest LED supplier, holding more than 10,000 patents globally, while offering a wide range of LED technology and production capacity in areas such as “nPola”, "Acrich", the world’s first commercially produced AC LED, and "Acrich MJT Multi-Junction Technology" a proprietary family of high-voltage LEDs. The company’s broad product portfolio includes a wide array of package and device choices such as Acrich and Acirch2, high-brightness LEDs, mid-power LEDs, side-view LEDs, and through-hole type LEDs as well as custom modules, displays, and sensors. Legal Disclaimer Information in this document is provided in connection with Seoul Semiconductor products. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Seoul Semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. The appearance and specifications of the product can be changed to improve the quality and/or performance without notice. Rev2.1, Sep 9, 2015 23 www.seoulsemicon.com