CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 1/7 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTP4403SQ8 BVDSS -20V RDSON(MAX) 46mΩ ID -6.1A Description The MTP4403SQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=46mΩ@VGS=-10V, ID=-6.1A RDS(ON)=61mΩ@VGS=-4.5V, ID=-5A • Simple drive requirement • Low gate charge • Low voltage drive (2.5V) • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit Outline MTP4403SQ8 SOP-8 G：Gate S：Source D：Drain Ordering Information Device MTP4403SQ8 MTP4403SQ8 Package SOP-8 (Pb-free lead plating package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Continuous Drain Current, TA=70℃ (Note 1) Pulsed Drain Current (Note 2) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Ambient (Note 1) Symbol Limits Unit VDS VGS ID ID IDM Pd -20 ±12 -6.1 -5.1 -60 2.5 0.02 -55~+150 50 V V A A A W W / °C °C °C/W Tj ; Tstg Rth,j-a Note : 1.Surface mounted on 1 in² copper pad of FR-4 board; 125 °C/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -20 V VGS=0, ID=-250μA VGS(th) -0.7 -1.3 V VDS=VGS, ID=-250μA IGSS ±100 nA VGS=±12V, VDS=0 -1 VDS=-20V, VGS=0 IDSS μA VDS=-16V, VGS=0, Tj=55℃ -5 46 ID=-6.1A, VGS=-10V mΩ 61 ID=-5A, VGS=-4.5V *RDS(ON) 117 ID=-1A, VGS=-2.5V *GFS 11 S VDS=-5V, ID=-5A Dynamic Ciss 940 pF VDS=-15V, VGS=0, f=1MHz Coss 104 Crss 73 *td(ON) 7.6 VDD=-15V, VGS=-10V, RG=6Ω, *tr 8.6 ns *td(OFF) 44.7 RD=2.4Ω *tf 16.5 *Qg 9.4 nC VDS=-15V, VGS=-4.5V, ID=-5A *Qgs 2 *Qgd 3 Source Drain Diode *VSD -1 V VGS=0V, IS=-1A *IS -4.2 A *Trr 22.7 ns IS=-5A, VGS=0, dI/dt=100A/μs *Qrr 15.9 nC *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTP4403SQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 3/7 Characteristic Curves MTP4403SQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 4/7 Characteristic Curves(Cont.) MTP4403SQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 5/7 Reel Dimension Carrier Tape Dimension MTP4403SQ8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 6/7 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP4403SQ8 CYStek Product Specification Spec. No. : C804Q8 Issued Date : 2009.12.16 Revised Date : 2011.03.21 Page No. : 7/7 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name Date Code H 4403SSC □□□□ J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1890 0.2007 0.1496 0.1654 0.2283 0.2441 0.0480 0.0519 0.0138 0.0193 0.1472 0.1527 0.0531 0.0689 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.80 5.10 3.80 4.20 5.80 6.20 1.22 1.32 0.35 0.49 3.74 3.88 1.35 1.75 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0098 REF 0.0118 0.0354 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.25 REF 0.30 0.90 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4403SQ8 CYStek Product Specification