CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953Q8 Description The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • RDS(ON)=60mΩ@VGS=-10V, ID=-5A RDS(ON)=90mΩ@VGS=-4.5V, ID=-4A • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free package Applications • Power management in notebook computer, portable equipment and battery powered systems. Equivalent Circuit MTDP4953Q8 Outline SOP-8 G：Gate S：Source D：Drain MTDP4953Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 2) (Note 1) (Note 1) Total Power Dissipation (Note 1) Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol Limits Unit BVDSS VGS ID ID IDM Pd -30 ±20 -5 -4 -20 2 0.02 -55~+150 -55~+150 62.5 V V A A A W W / °C °C °C °C/W Tj Tstg Rth,ja Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. 2.Pulse width ≤300μs, duty cycle≤2% Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS -30 V VGS=0, ID=-250μA VGS(th) -1 -2.5 V VDS=VGS, ID=-250μA IGSS ±100 nA VGS=±20V, VDS=0 IDSS -1 μA VDS=-24V, VGS=0 60 ID=-5A, VGS=-10V *RDS(ON) mΩ 90 ID=-4A, VGS=-4.5V *GFS 5 S VDS=-5V, ID=-5A Dynamic Ciss 582 pF VDS=-15V, VGS=0, f=1MHz Coss 125 Crss 86 *td(ON) 9 VDS=-15V, ID=-1A, *tr 10 ns VGS=-10V, RG=6Ω, RD=15Ω *td(OFF) 37 *tf 23 *Qg 11.7 VDS=-15V, ID=-5A, nC *Qgs 2.1 VGS=-10V, *Qgd 2.9 Source-Drain Diode *VSD -0.84 -1.2 V VGS=0V, IS=-1.7A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% MTDP4953Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 3/8 Characteristic Curves MTDP4953Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 4/8 Characteristic Curves(Cont.) MTDP4953Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 5/8 Characteristic Curves(Cont.) Ordering Information Device MTDP4953Q8 MTDP4953Q8 Package SOP-8 (Pb-free) Shipping Marking 3000 pcs / Tape & Reel 4953SS CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTDP4953Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTDP4953Q8 CYStek Product Specification Spec. No. : C402Q8 Issued Date : 2006.06.15 Revised Date :2009.06.25 Page No. : 8/8 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A I C B Marking: Device Name 4953SS Date Code □□□□ H J E D K Front View Part A Part A M L 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 N O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTDP4953Q8 CYStek Product Specification