CMPFCD86 PFC Diode (8A/600V) FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A CMPFCD86 (TO-220AC) K MECHANICAL DATA (TO-220FP) A K CMPFCD86 (TO-252/DPAK) Primary Characteristics Case : Molded plastic TO-220AC / TO-220FP Epoxy : UL94V-0 rate flame retardant Terminals : Solder able per MIL-STD-202 method 208 265℃ Max. for 10 Seconds Maximum Mounting Torque 6 ( 5 ) Kg-cm( Ibf-in ) A CMPFCD86 A NC K IF(AV) 8A VRRM 600 V VF(typ) 1.5 V IR(typ) 10 μA Tj 175 ℃ ORDERING INFORMATION Part Number Temperature Range Package CMPFCD86XN220* -55℃ to 175℃ TO-220AC CMPFCD86GN220* -55℃ to 175℃ TO-220AC CMPFCD86XN220FP* -55℃ to 175℃ TO-220FP CMPFCD86GN220FP* -55℃ to 175℃ TO-220FP CMPFCD86XN252* -55℃ to 175℃ TO-252 *Note : G : Suffix for Pb Free Product X : Suffix for Halogen Free *Note : N : TO APPLICATION CIRCUIT AC INPUT CMPFCD86 EMI FILTER - + CMT14N60 PFC(CCM) Controller CM65XX CM68XX Family CM6805 2014/09/30 Rev1.8 Champion Microelectronic Corporation Page 1 CMPFCD86 PFC Diode (8A/600V) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25℃ ambient temperature unless otherwise specified. Single phase, half wave , 60Hz , resistive or inductive load. For capacitive load , derate current by 20% Symbol CMPFCD86 Characteristics Unit Rating VRRM VDC IF(AV) Recurrent Peak Reverse Voltage 600 V DC Blocking Voltage 600 V 8 A 90 A 110 A 200 A 90 A 150 A Tp=10ms 91 A s TJ=25℃ 1.5 TJ=125℃ 1.25 DC Reverse Current TJ=25℃ 10 At Rated DC Blocking Voltage TJ=150℃ 45 Average Forward Rectified Current @Tc=140℃ Peak Forward Surge Current IFSM 8.3ms single half sine-wave Super imposed on rated load (JEDEC Method) IFSM IFSM IFSM IFSM 2 Peak Forward Surge Current 4ms single half sine-wave Peak Forward Surge Current 1ms single half sine-wave Peak Forward Surge Current 4ms single Square-wave superimposed on rated load Peak Forward Surge Current 1.0ms single Square-wave superimposed on rated load (JEDEC Method) 2 I t I t Value For Fusing VF Instantaneous Forward Voltage (Typical) @8A IR 2 V uA Maximum Reverse Recovery Time Trr CJ Test Conditions : IF=0.5A , Ir=1.0A , Irr=0.25A 25 Test Conditions : IF=1A, dIF/dt = -50A/uS, VR=30V 35 Typical Junction Capacitance 36 (note1) TO-220AC RθJC Typical Thermal Resistance (note2) TO-252 TO-220FP TJ TSTG RθJA 2.2 nS pF ℃/ W 4.6 Operating Temperature Range -55~+175 ℃ Storage Temperature Range -55~+175 ℃ Typical Thermal Resistance TO-220AC 60 TO-220FP 50 TO-252 80 ℃ Notes : 1. Measured at 1.0MHz and applied reverse voltage of 4.0 Volts DC. 2. Thermal Resistance junction to case. 2014/09/30 Rev1.8 Champion Microelectronic Corporation Page 2 CMPFCD86 PFC Diode (8A/600V) TYPICAL CHARACTERISTICS Figure 2. Typical Reverse Characteristics per Diode Figure 1. Typical Forward voltage V.S current 9 30 28 δ=0.1 δ=0.5 δ=0.2 26 δ=1 8 o 22 Rth(j-a) = 2.5 C/W 6 20 18 IF(av) (A) PF(av) (W) δ=0.5 per Diode 7 24 16 14 12 T 5 o Rth(j-a) = 4.5 C/W o Rth(j-a) = 15 C/W 4 3 10 o 8 Rth(j-a) = 75 C/W 2 6 1 4 2 tp δ=tp/T 0 0 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170 180 o Case Temperature ( C) IF(av) (A) Figure 3. Average Forward Power Dissipation per Diode Figure 4. Current derating Curves 180 150 o f=1.0MHz Vsig= 20mVp-p 100 IF S M (A ) Junction Capacitance (pF) T=25 C 120 25℃ 90 125℃ 60 30 0 1 10 0.1 1 10 4 8.3 100 Time(mS) Reverse Voltage (V) Figure 5. Typical Junction Capacitance Figure 6. Peak forward surge current (square-wave) 250 IF S M (A ) 200 150 25℃ 100 125℃ 50 0 1 4 8.3 Time(mS) Figure 7. Peak forward surge current (single half sine wave) 2014/09/30 Rev1.8 Champion Microelectronic Corporation Page 3 CMPFCD86 PFC Diode (8A/600V) PACKAGE DIMENSION 2014/09/30 Rev1.8 Champion Microelectronic Corporation Page 4 CMPFCD86 PFC Diode (8A/600V) IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan R.O.C T E L : +886-3-567 9979 F A X : +886-3-567 9909 http://www.champion-micro.com T E L : +886-2-2696 3558 F A X : +886-2-2696 3559 2014/09/30 Rev1.8 Champion Microelectronic Corporation Page 5