Passive Micro

PMC (Passive Micro Components)
OVERVIEW
PMC thin-film technology offers comprehensive materials and
processes combinations allowing electronic designers superior
space saving, tolerance and signal integrity for semi custom
designs in the MHz to GHz spectrum.
BENEFITS
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Precision: 0.05% tolerance or match
Integration: controlled parasitic ESR and ESL
Miniaturization: 4µm line widths
Materials: substrates, conductors, dielectrics and resistors
Device laser trimming and tuning: die and wafer level
Inductors: multi level and turn, ⭐40nH, Q⭐80
Termination options: BGA, LGA, or wire bond
TYPICAL MATERIALS AND DESIGNS OFFERED
Passive
Resistors
Capacitors
Inductors
Material
TaN
SiCr
SiON
SiO2
BCB
X7R
Cu
Minimum
Chip Size
mm (in)
0.5 x 0.5
(0.020 x 0.020)
0.5 x 0.5
(0.020 x 0.020)
0.25 x 0.25
(0.010 x 0.010)
0.25 x 0.25
(0.010 x 0.010)
0.5 x 0.5
(0.020 x 0.020)
0.5 x 0.5
(0.020 x 0.020)
1.0 x 0.5
(0.039 x 0.020)
Range
0.47-1M
Ohm
47-20M
Ohm
1-500pF
1-500pF
1-50pF
2.2pF-400nF
0.5-40nH
Trimmable
Yes
Yes
Yes
No
Yes
No
No
Tolerance;
NOTE value
dependent
0.05%
0.05%
⭓0.5%;
or
⭓0.05pF
⭓0.5%;
or
⭓0.05pF
⭓0.5%;
or
⭓0.05pF
5%
5%
Performance;
NOTE TCR
in ppm/°C
TCR
-100 to
-150
TCR
±25;
±250
K 5.8;
TCC 60
K 4;
TCC 30
K 2.7;
TCC 42
K 1000
Q ⭐ 80
I/O Type
BGA (Ball Grid Array), LGA (Land Grid Array), and gold or aluminum wire bond
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PMC (Passive Micro Components)
• SUBSTRATE SELECTION
– 6 inch Silicon, Ceramic,
Glass and Quartz
• RESISTORS
– SiCr and TaN
• CAPACITORS
– NP0 and X7R
• INDUCTORS
– Cu 1µm to 20µm thick
• PASSIVATION
– BCB / SiN
• TERMINATION
– BGA (Ball Grid Array)
diameter from 60 to
300µm
– LGA (Land Grid Array)
– WB (Wire Bond) gold or
aluminum
• UBM
– TiW Ni Cu or TiW Cu
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PMC (Passive Micro Components)
RESISTOR MATERIAL CAPABILITIES
Y AXIS: TCR (PPM / oC)
400
SiCr
300
200
Sheet resistivity 300-1300 Ohms/square
100
TCR + 25ppm
0
R values 47 to 20M Ohms
-100 0
250 TCR500+ 250ppm 750
1000
1250
-200
-300 TaN
-400
Sheet resistivity 20-100 Ohms/square
1500
R values 0.5 to 1M Ohms
TCR – 100 to -150 ppm
X AXIS: R SQUARED (OHMS)
CAPACITOR MATERIAL CAPABILITIES
Material
X7R
SiON
SiO2
BCB
pF / mm2
8000 @ 5V, up to
25000 @ 3V*
55
35
25
Typical
Stability
-55 to +125 ±15%
±60 ppm/°C
±30 ppm/°C
±42 ppm/°C
Rated Voltage
3-5
⭐100
⭐100
⭐25
BDV (V/µm)
100
600
1000
300
DF
⭐8%
⭐0.1%
⭐0.1%
⭐0.1%
Voltage
Stability
Less 1.25% per volt
from 0 to 5 volts
Independent
Independent
Independent
Frequency
Range
⭐10 GHz
⭐40 GHz
⭐40 GHz
⭐75 GHz
*Based on dielectric thickness of 0.25µm @ 3V, and 0.5µm @5V
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PMC (Passive Micro Components)
• RESISTORS
– Industry leading high
Ohmic, laser trimmable
low TCR and leakage
high or low voltage
designs
• CAPACITORS
– MIS, MOS, or MIM style
SLCs
– Precision laser trimmed
NP0 capacitor arrays
• INDUCTORS
– 3 turn 2 level designs
– Q up to 80
– Up to 40 nH
– Copper construction
• FILTERS
– LCs, LRs, and RCs
– Low & High Pass
– Band Pass
– Band Rejection
A KYOCERA GROUP COMPANY
http://www.avx.com
S-PMC00M107-N