SM6S Series Vishay Semiconductors New Product formerly General Semiconductor Surface Mount Automotive Transient Voltage Suppressors Stand-off Voltage 10 to 36V Peak Pulse Power 4600W (10/1000µs) 3600W (10/10,000µs) DO-218AB 0.628(16.0) 0.592(15.0) 0.539(13.7) 0.524(13.3) 0.116(3.0) 0.093(2.4) * d e t n e t Pa Mounting Pad Layout 0.413(10.5) 0.342(8.7) 0.374(9.5) 0.327(8.3) 0.091(2.3) 0.067(1.7) 0.116(3.0) 0.093(2.4) 0.413(10.5) 0.374(9.5) 0.366(9.3) 0.343(8.7) Dimensions in inches and (millimeters) 0.406(10.3) 0.382(9.7) LEAD 1 0.197(5.0) 0.185(4.7) 0.366(9.3) 0.343(8.7) 0.138(3.5) 0.098(2.5) 0.150(3.8) 0.126(3.2) 0.606(15.4) 0.583(14.8) *Patent #’s: 0.016 (0.4) Min. LEAD 2/METAL HEATSINK 0.028(0.7) 0.020(0.5) 4,980,315 5,166,769 5,278,095 0.098(2.5) 0.059(1.5) Features Mechanical Data • Ideally suited for load dump protection • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temperature stability due to unique oxide passivation and patented PAR® construction • Integrally molded heatsink provides a very low thermal resistance for maximum heat dissipation • Low leakage current at TJ = 175°C • High temperature soldering guaranteed: 260°C for 10 seconds at terminals • Meets ISO7637-2 surge spec. • Low forward voltage drop Case: Molded plastic body, surface mount with heatsink integrally mounted in the encapsulation Terminals: Plated, solderable per MIL-STD-750, Method 2026 Polarity: Heatsink is anode Mounting Position: Any Weight: 0.091 oz., 2.58 g Packaging codes/options: 2D/750 per 13" Reel (16mm Tape), anode towards sprocket hole, 4.5K/box 2E/750 per 13" Reel (16mm Tape), cathode towards sprocket hole, 4.5K/box Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Value Unit PPPM 4600 3600 W PD 6.0 W Peak pulse current with a 10/1000µs waveform (NOTE 1) IPPM See Table 1 A Peak forward surge current, 8.3ms single half sine-wave IFSM 600 A Typical thermal resistance junction to case RΘJC 0.95 °C/W TJ, TSTG –55 to +175 °C Peak pulse power dissipation with 10/1000µs waveform 10/10,000µs waveform Steady state power dissipation Operating junction and storage temperature range Notes: (1) Non-repetitive current pulse derated above TA=25°C Document Number 88384 01-Aug-02 www.vishay.com 1 SM6S Series Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (TC = 25°C unless otherwise noted) Device Type Breakdown Voltage V(BR) (V) Test Current IT Stand-off Voltage VWM Maximum Reverse Leakage at VWM ID Maximum Max. Peak Maximum Reverse Pulse Clamping Leakage Current Voltage at at VWM at 10/1000µs IPPM Tc=175oC Waveform VC Min. Max. (mA) (V) (µA) ID(µA) (A) (V) SM6S10 11.1 13.6 5.0 10.0 15 250 245 18.8 SM6S10A 11.1 12.3 5.0 10.0 15 250 271 17.0 SM6S11 12.2 14.9 5.0 11.0 10 150 229 20.1 SM6S11A 12.2 13.5 5.0 11.0 10 150 253 18.2 SM6S12 13.3 16.3 5.0 12.0 10 150 209 22.0 SM6S12A 13.3 14.7 5.0 12.0 10 150 231 19.9 SM6S13 14.4 17.6 5.0 13.0 10 150 193 23.8 SM6S13A 14.4 15.9 5.0 13.0 10 150 214 21.5 SM6S14 15.6 19.1 5.0 14.0 10 150 178 25.8 SM6S14A 15.6 17.2 5.0 14.0 10 150 198 23.2 SM6S15 16.7 20.4 5.0 15.0 10 150 171 26.9 SM6S15A 16.7 18.5 5.0 15.0 10 150 189 24.4 SM6S16 17.8 21.8 5.0 16.0 10 150 160 28.8 SM6S16A 17.8 19.7 5.0 16.0 10 150 177 26.0 SM6S17 18.9 23.1 5.0 17.0 10 150 151 30.5 SM6S17A 18.9 20.9 5.0 17.0 10 150 167 27.6 SM6S18 20.0 24.4 5.0 18.0 10 150 143 32.2 SM6S18A 20.0 22.1 5.0 18.0 10 150 158 29.2 SM6S20 22.2 27.1 5.0 20.0 10 150 128 35.8 SM6S20A 22.2 24.5 5.0 20.0 10 150 142 32.4 SM6S22 24.4 29.8 5.0 22.0 10 150 117 39.4 SM6S22A 24.4 26.9 5.0 22.0 10 150 130 35.5 SM6S24 26.7 32.6 5.0 24.0 10 150 107 43.0 SM6S24A 26.7 29.5 5.0 24.0 10 150 118 38.9 SM6S26 28.9 35.3 5.0 26.0 10 150 99 46.6 SM6S26A 28.9 31.9 5.0 26.0 10 150 109 42.1 SM6S28 31.1 38.0 5.0 28.0 10 150 92 50.1 SM6S28A 31.1 34.4 5.0 28.0 10 150 101 45.4 SM6S30 33.3 40.7 5.0 30.0 10 150 86 53.5 SM6S30A 33.3 36.8 5.0 30.0 10 150 95 48.4 SM6S33 36.7 44.9 5.0 33.0 10 150 78 59.0 SM6S33A 36.7 40.6 5.0 33.0 10 150 86 53.3 SM6S36 40.0 48.9 5.0 36.0 10 150 72 64.3 SM6S36A 40.0 44.2 5.0 36.0 10 150 79 58.1 Note: For all types maximum VF = 1.9V at IF = 100A measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum www.vishay.com 2 Document Number 88384 01-Aug-02 SM6S Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Load Dump Power Characteristics (10ms Exponential Waveform) Power Derating Curve 6,000 8.0 Load Dump Power (W) Power Dissipation (W) 5,000 6.0 4.0 2.0 4,000 3,000 2,000 1,000 0 0 50 0 150 100 200 25 Case Temperature (°C) 75 100 125 150 175 Case Temperature (°C) Pulse Waveform Reverse Power Capability 10,000 150 tr = 10µs Peak Value IPP 100 TA = 25°C Pulse width (td) is defined as the point where the peak current decays to 50% of IPP Half Value – 50 Reverse Surge Power (W) Input Peak Pulse Current % 50 IPP 2 td 0 0 1,000 10 30 20 40 100 10 Pulse Width (ms) – 1/2 IPP Exponential Waveform Time, ms (t) Typical Transient Thermal Impedance Transient Thermal Impedance (°C/W) 100 RΘJA 10 RΘJC 1 0.1 0.01 0.01 0.1 1 10 100 t – Pulse Width (sec.) Document Number 88384 01-Aug-02 www.vishay.com 3