RENESAS HVC133

To all our customers
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
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these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
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circuit application examples contained in these materials.
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contained therein.
HVC133
Silicon Epitaxial Planar Pin Diode for High Frequency Switching
ADE-208-423B (Z)
Rev. 2
Feb. 2000
Features
• Low capacitance.(C1 = 1.0pF max)
• Low forward resistance. (rf = 0.7Ω max)
• Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HVC133
P3
UFP
Pin Arrangement
Cathode mark
Mark
1
P3
2
1. Cathode
2. Anode
HVC133
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Value
Unit
Reverse voltage
VR
30
V
Power dissipation
Pd
150
mW
Junction temperature
Tj
125
°C
Storage temperature
Tstg
−55 to +125
°C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse voltage
VR
30
—
—
V
IR = 1µA
Reverse current
IR
—
—
100
nA
VR = 25V
Forward voltage
VF
—
—
0.85
V
IF = 2 mA
Capacitance
C1
—
—
1.0
pF
VR = 1V, f = 1 MHz
C6
—
—
0.9
rf
—
0.55
0.7
Forward resistance
Rev.2, Feb. 2000, page 2 of 5
VR = 6V, f = 1 MHz
Ω
IF = 2mA, f = 100 MHz
HVC133
Main Characteristic
10
-10
-2
10
-4
-11
10
-6
Reverse current I
10
10
Ta= 75°C
R
(A)
Forward current I F (A)
10
-8
Ta= 75°C
Ta= 50°C
-10
-12
10
Ta= 50°C
10-13
10
Ta= 25°C
Ta= 25°C
-12
10-14
0
10
0
0.6
0.8
0.2
0.4
Forward voltage VF (V)
1.0
5
10
15
20
30
25
Reverse voltage VR (V)
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
3
10
f=1MHz
f=100MHz
Forward resistance r f (Ω )
Capacitance C (pF)
10
1.0
0.1
0.1
2
10
10
0
10
10
1.0
10
Reverse voltage VR (V)
Fig.3 Capacitance Vs. Reverse voltage
1
-1
-5
10
-4
10
-3
10
-2
10
Forward current I F (A)
Fig.4 Forward resistance Vs. Forward current
Rev.2, Feb. 2000, page 3 of 5
HVC133
Package Dimensions
1.2 ± 0.10
0.13 ± 0.05
1.6 ± 0.10
0.6 ± 0.10
0.3 ± 0.05
0.8 ± 0.10
Unit: mm
Hitachi Code
JEDEC
EIAJ
Mass
Rev.2, Feb. 2000, page 4 of 5
UFP
—
Conforms
0.0016 g
HVC133
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
Colophon 4.0
Rev.2, Feb. 2000, page 5 of 5