HITACHI H7N0308CF

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Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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these changes do not constitute any alteration to the contents of the document itself.
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
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semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
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H7N0308CF
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1570A(Z)
2nd. Edition
Aug. 2002
Features
• Low on-resistance
• RDS(on) = 3.8 mΩ typ.
• Low drive current
• 4.5 V gate drive device can be driven from 5 V source
Outline
TO-220CFM
D
G
1 2
S
3
1. Gate
2. Drain
3. Source
H7N0308CF
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
30
V
Gate to source voltage
VGSS
±20
V
Drain current
ID
60
A
240
A
Drain peak current
ID(pulse)
Body-drain diode reverse drain current
IDR
Channel dissipation
Pch
Channel to Case Thermal Impedance
Note 1
60
A
30
W
θch-c
4.17
°C/W
Channel to Ambient Thermal
Impedance
θch-a
62.5
°C/W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Rev.1, Aug. 2002, page 2 of 2
Note 2
H7N0308CF
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
V
Test Conditions
Drain to source breakdown voltage V(BR)DSS
30
—
—
Gate to source breakdown voltage
V(BR)GSS
±20
—
—
Gate to source leak current
IGSS
—
—
±10
µA
VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
10
µA
VDS = 30 V, VGS = 0
Gate to source cutoff voltage
VGS(off)
1.0
—
2.5
V
ID = 1 mA, VDS = 10 V
Static drain to source on state
RDS(on)
—
3.8
4.8
mΩ
ID = 30 A, VGS = 10 V
—
6.0
8.5
mΩ
ID = 30 A, VGS = 4.5 V
|yfs|
42
70
—
S
ID = 30 A, VDS = 10 V
Input capacitance
Ciss
—
3350
—
pF
VDS = 10V
Output capacitance
Coss
—
840
—
pF
VGS = 0
Reverse transfer capacitance
Crss
—
480
—
pF
f = 1 MHz
Total gate charge
Qg
—
52
—
nc
VDD = 10 V
Gate to source charge
Qgs
—
11
—
nc
VGS = 10 V
Gate to drain charge
Qgd
—
10
—
nc
ID = 60 A
Turn-on delay time
td(on)
—
30
—
ns
VGS = 10 V, ID = 30A
Rise time
tr
—
370
—
ns
RL = 0.33 Ω
Turn-off delay time
td(off)
—
80
—
ns
Rg = 4.7 Ω
Fall time
tf
—
27
—
ns
Body–drain diode forward voltage
VDF
—
0.90
—
V
IF = 60 A, VGS = 0
—
55
—
ns
IF = 60 A, VGS = 0
diF/ dt = 50 A/µs
resistance
Forward transfer admittance
Body–drain diode reverse recovery trr
time
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
Note 1
Note 1
Note 1
Note 1
Notes: 1. Pulse test
Rev.1, Aug. 2002, page 3 of 3
H7N0308CF
Package Dimensions
As of January, 2002
Unit: mm
2.54
2.54
15.0 ± 0.3
4.5 ± 0.3
2.7 ± 0.2
2.5 ± 0.2
13.60 ± 1.0
0.6 ± 0.1
4.1 ± 0.3
1.0 ± 0.2
1.15 ± 0.2
φ 3.2 ± 0.2
12.0 ± 0.3
10.0 ± 0.3
0.7 ± 0.1
Hitachi Code
JEDEC
JEITA
Mass (reference value)
Rev.1, Aug. 2002, page 4 of 4
TO-220CFM
—
—
1.9 g
H7N0308CF
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
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Copyright © Hitachi, Ltd., 2002. All rights reserved. Printed in Japan.
Colophon 6.0
Rev.1, Aug. 2002, page 5 of 5