GSA MIXED-SIGNAL/RF SPICE MODEL CHECKLIST Checklist Form Version 1.4, Apr. 2015 Section 1 – Foundry and Support Contact Information Foundry ams AG Process 0.35µm HV-CMOS - H35xx – hitkit 4.10 Date 02/2013 SPICE Model Support Contact Name Ehrenfried Seebacher Phone +43 3136/500 31790 Email [email protected] Section 2 – Foundry Modeling Documents Document Document Number & Title SPICE Model Library ENG-238: H35 Process Parameters Sectio n Revision 4 Date 6.0 Mar 2009 ENG-366: H35 10V CMOS Module PP 4.0 Aug 2010 ENG-312: H35 120V CMOS Module PP 3.0 Jan 2012 6.0 Mar 2009 ENG-366: H35 10V CMOS Module PP 4.0 Aug 2010 ENG-312: H35 120V CMOS Module PP 3.0 Jan 2012 5.0 Jun 2011 1.0 Feb 2012 3.0 Sep 2014 1.0 Sept 2010 12.0 Sep 2012 ENG-367: H35 10V Design Rules 2.0 Nov 2009 ENG-313: H35 120V Design Rules 6.0 Nov 2013 Process Flow/X-section ENG-238: H35 Process Parameters 6.0 Mar 2009 Device Characterization Report ENG-238: H35 Process Parameters 6.0 Mar 2009 Measured vs. Simulated Data Noise Model ENG-238: C35 Process Parameters ENG-244: H35 Noise Parameters 5 all ENG-396: H35 10V Noise Parameters Matching Models ENG-245: H35 Matching Parameters all ENG-397: H35 10V Matching Parameters Design Rules ENG-243: H35 Design Rules all 4 PCM Structure & Test Report Device Parasitic Methods Checklist Form Version 1.4 Page 1 Section 3 – Circuit Simulators Simulator Vendor and Tool Level Support Version Circuit Simulator (A) Spectre 53 MMSIM10ISR17 Circuit Simulator (B) Eldo 53 V2010.2 Circuit Simulator (C) Hspice 49 V2009.09 Version Date Comments 1.) Model Benchmark Simulator vs. Simulator > criteria: error < 0.5% 2.) Monte Carlo and Mismatch available for Spectre, Eldo Checklist Form Version 1.4 Page 2 MOS No of Plots Max Error Corner Val Model Val Samples/Lots Stat Method Stat Model HV Params RF Params HF Noise 1/f Noise No of Bins Terminals Comments Model Style Version Model Type Model Name Device Type Device Name Section 4 – Model Classification, Noise, Matching, Statistical Variation, Results nmos4 modn Bsim3 3.2 C 1 4 1 M BS SMC R 4 pmos4 modp Bsim3 3.2 C 1 4 1 M BS SMC R 4 nmosm4 modnm Bsim3 3.2 C 1 4 1 M BS SMC R 4 pmosm4 modpm Bsim3 3.2 C 1 4 1 M BS SMC R 4 nmosh4 modnmh Bsim3 3.2 C 2 4 1 M BS SMC R 2 nmosmh4 modnmh Bsim3 3.2 C 2 4 1 M BS SMC R 2 nmosi modni Bsim3 3.2 C 1 6 1 M BS SMC R 4 pmosi modpi Bsim3 3.2 C 1 5 1 M BS SMC R 4 nmosim modnim Bsim3 3.2 C 1 6 1 M BS SMC R 4 pmosim modpim Bsim3 3.2 C 1 5 1 M BS SMC R 4 nmosil modnil Bsim3 3.2 C 1 6 1 M BS SMC R 4 pmosil modpil Bsim3 3.2 C 1 5 1 M BS SMC R 4 nmosiml modniml Bsim3 3.2 C 1 6 1 M BS SMC R 4 pmosiml modpiml Bsim3 3.2 C 1 5 1 M BS SMC R 4 pmossl modpssl Bsim3 3.2 C 1 5 1 M BS SMC R 4 pmossml modpssml Bsim3 3.2 C 1 5 1 M BS SMC R 4 nmos50t modn50t Bsim3 3.1 C 1 4 1 M BS SMC R 2 nmos50m modn50m Bsim3 3.1 C 1 4 1 M BS SMC R 2 nmos50h modn50h Bsim3 3.1 C 3 4 1 M BS SMC R 2 nmos50hs modn50hs Bsim3 3.1 C 3 4 1 M BS SMC R 2 nmosi50t modni50t Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosi50m modni50m Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosi50h modni50h Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosdi50h modndi50h Bsim3 3.1 S 3 5 1 M BS SMC R pmos50t modp50t Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos50m modp50m Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos50h modp50h Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos50hs modp50hs Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmos20t modn20t Bsim3 3.1 S 3 4 1 M BS SMC R 2 nmos20m modn20m Bsim3 3.1 S 3 4 1 M BS SMC R 2 nmos20h modn20h Bsim3 3.1 S 3 4 1 M BS SMC R 2 nmos20hs modn20hs Bsim3 3.1 S 3 4 1 M BS SMC R 2 nmosi20t modni20t Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosi20m modni20m Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosi20h modni20h Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmosdi20h modndi20h Bsim3 3.1 S 3 5 1 M BS SMC R pmos20t modp20t Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos20m modp20m Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos20h modp20h Bsim3 3.1 S 3 5 1 M BS SMC R 2 pmos20hs modp20hs Bsim3 3.1 S 3 5 1 M BS SMC R 2 nmos10mh modn10mh Bsim3 3.1 S 3 5 1 M BS SMC R 4 nmosd10mh modnd10mh Bsim3 3.1 S 3 5 1 M BS SMC R 4 pmos10mh modp10mh Bsim3 3.1 S 3 5 1 M BS SMC R 4 Checklist Form Version 1.4 F Page 3 Bip Diode CAP RES pmosd10mh modp10mh Bsim3 3.1 S 3 5 1 M BS SMC R 4 nmosi120m modni120m Bsim3 3.1 S 3 5 1 M BS SMC R 4 nmosi120h modni120h Bsim3 3.1 S 3 5 1 M BS SMC R 4 pmos120m modp120m Bsim3 3.1 S 3 5 1 M BS SMC R 4 pmos120h modnd120h Bsim3 3.1 S 3 5 1 M BS SMC R 4 Vertph vertph GP 1 C 4 4 1 F BS SC R 1 vertn1 vertn1 GP 1 C 4 4 1 F BS SC R 2 vert10 vert10 GP 1 C 4 4 1 M F BS SMC R 2 lat2 lat2 GP 1 S 4 5 1 M F BS SC R 2 subdiode nd Berkeley 1 C 5 2 1 BS welldiode pd Berkeley 1 C 5 2 1 BS nwd nwd Berkeley 1 C 5 2 1 BS dn_ps dn_ps Berkeley 1 C 5 2 1 BS dp_dn dp_dn Berkeley 1 C 5 2 1 BS nd_sp nd_sp Berkeley 1 C 5 2 1 BS pd_sn pd_sn Berkeley 1 C 5 2 1 BS cpoly cpoly CAP C 2 1 BS SMC R 1 cpm cpm CAP C 2 1 BS SC R cwpm cwpm CAP S 2 1 BS SC R cmim20 cmim20 CAP C 2 1 BS SC R rpoly1 rpoly1 RES C 6 2 1 BS SMC R rpoly2 rpoly2 RES C 6 2 1 BS SMC R rpolyh rpolyh RES C 6 2 1 BS SMC R rdiffn rdiffn RES C 2 1 BS SC R rdiffn3 rdiffn3 JFET 3 1 BS SC R rdiffnr rdiffnr RES 2 1 BS SC R rdiffn3 rdiffnr3 JFET 3 1 BS SC R rdiffp rdiffp RES 2 1 BS SC R rdiffp3 rdiffp3 JFET 3 1 BS SC R rdiffps rdiffps RES 2 1 BS SC R rdiffps3 rdiffps3 JFET 1 C 7 3 1 BS SC R rnwell rnwell JFET 1 C 7 3 1 BS SC R 2 rnwells rnwells JFET 1 C 7 3 1 BS SC R 2 pjfet pjfet JFET 1 C 7 3 1 BS SC rpwellr rpwellr JFET 1 C 7 3 1 BS SC Model Style: 1/f Noise, HF Noise: RF Parameters: HV Parameters: Stat Model: Model Val: Checklist Form S C M Y S F S S C M R 1 C 7 C 1 C 7 C 1 C 7 C 2 R Subcircuit Model Compact Model Measured Y-Parameters Included S-Parameters Included FT or Transition Frequency Numbers Included Safe Operating Area Statistical Parameters Available Process Corner Models Available Matching Parameters Available Results of Model Validation Available Version 1.4 Page 4 2 Comments 1. 2. 3. 4. 5. 6. Scalable MOS models with physical parameter set High Voltage MOS Transistors with fixed layout; Usage for specific cells only Scalable HV MOS models with physical parameter set Fixed layout for bipolar models Model usage only in backward direction Simple resistor model without RF behavior includes voltage, temp.- dependency and width dependency W=f(T) 7. Resistor modelled by a JFET Section 5 – Device Specific Parameters Device Type Device Name Model Name Geom Min Width MOS nmos4 modn 10 0.4 pmos4 modp 10 nmosm4 modnm 10 pmosm4 modpm nmosh4 Checklist Form Min Temp Max Temp 0.35 -40 180 * 0.4 0.35 -40 180 * 0.4 0.5 -40 180 10 0.4 0.5 -40 180 modnh 10 0.4 3.0 3.0 -40 180 nmosmh4 modnmh 10 0.4 3.0 3.0 -40 180 nmosi modni 10 0.4 0.35 -40 180 pmosi modpi 10 0.4 0.35 -40 180 nmosim modnim 10 0.4 0.5 -40 180 pmosim modpim 10 0.4 0.5 -40 180 nmosil modnil 10 0.4 0.35 -40 180 pmosil modpil 10 0.4 0.35 -40 180 nmosiml modniml 10 0.4 0.5 -40 180 pmosiml modpiml 10 0.4 0.5 -40 180 pmossl modpssl 10 0.4 0.35 -40 180 pmosml modpsml 10 0.4 0.5 -40 180 nmos50t modn50t 10 5.0 0.5 -40 180 nmos50m modn50m 10 5.0 0.5 -40 180 nmos50h modn50h 10 5.0 1.0 -40 180 nmos50hs modn50hs 10 20.0 4.0 -40 180 nmosi50t modni50t 10 5.0 0.5 -40 180 nmosi50m modni50m 10 5.0 0.5 -40 180 nmosi50h modni50h 10 5.0 0.5 -40 180 nmosdi50h modndi50h 10 5.0 0.5 -40 180 pmos50t modp50t 10 5.0 1.0 -40 180 pmos50m modp50m 10 5.0 1.0 -40 180 pmos50h modp50h 10 5.0 1.4 -40 180 pmos50hs modp50hs 10 5.0 2.8 -40 180 nmos20t modn20t 10 5.0 0.5 -40 180 nmos20m modn20m 10 5.0 0.5 -40 180 nmos20h modn20h 10 5.0 0.5 -40 180 nmos20hs modn20hs 10 5.0 1.8 -40 180 nmosi20t modni20t 10 5.0 0.7 -40 180 Version 1.4 Max Width Min Length Max Length Page 5 Max Freq Device Type BJT Diode Device Name Model Name Geom Min Width nmosi20m modni20m 10 5.0 nmosi20h modni20h 10 nmosdi20h modndi20h pmos20t pmos20m Min Temp Max Temp 0.5 -40 180 5.0 0.5 -40 180 10 5.0 0.5 -40 180 modp20t 10 5.0 0.6 -40 180 modp20m 10 5.0 0.6 -40 180 pmos20h modp20h 10 5.0 1.1 -40 180 pmos20hs modp20hs 10 5.0 1.2 -40 180 nmos10mh modn10mh 10 1.5 0.4 -40 180 nmosd10mh modnd10mh 10 2.5 0.4 -40 180 pmos10mh modp10mh 10 1.5 0.5 -40 180 pmosd10mh modpd10mh 10 2.5 0.5 -40 180 nmosi120m modni120m 10 10 0.5 -40 180 nmosi120h modni120h 10 10 0.5 -40 180 pmos120m modp120m 10 10 1.0 -40 180 pmos120h modp120h 10 10 1.2 -40 180 vertph vertph 15 15 70 70 -40 180 vertn1 vertn1 34 34 34 34 -40 180 vert10 vert10 10 10 10 10 -40 180 lat2 lat2 2 2 2 2 -40 180 -40 180 welldiode pd -40 180 cwd -40 180 dn_ps dn_ps -40 180 dp_dn dp_dn -40 180 nd_sp nd_sp -40 180 pd_sn pd_sn -40 180 cpoly cpoly 0.8 -40 180 cpm cpm 10 10 -40 180 cwpm 10 10 -40 180 cmim20 4 4 -40 180 cmim20 Checklist Form Max Length nd cwpm RES Min Length subdiode nwd CAP Max Width rpoly1 rpoly1 0.65 L/W>5 -40 180 rpoly2 rpoly2 0.65 L/W>5 -40 180 rpolyh Rpolyh 0.8 L/W>5 -40 180 rdiffn Rdiffn 0.3 L/W>5 -40 180 rdiffn3 rdiffn3 0.3 L/W>5 -40 180 rdiffnr Rdiffnr 0.3 L/W>5 -40 180 rdiffnr3 Rdiffnr 0.3 L/W>5 -40 180 rdiffp Rdiffp 0.3 L/W>5 -40 180 rdiffp3 rdiffp3 0.3 L/W>5 -40 180 rdiffps Rdiffps 0.3 L/W>5 -40 180 rdiffps3 rdiffps3 0.3 L/W>5 -40 180 rnwell Rnwell 3.0 L/W>5 -40 180 rnwells Rnwells 3.0 L/W>5 -40 180 pjfet Pjfet 9.0 L/W>5 -40 180 3 Version 1.4 Page 6 Max Freq Device Type Device Name Model Name rpwellr Rpwellr Geom Min Width 2.0 Max Width Min Length L/W>5 Max Length Min Temp Max Temp -40 180 IMPORTANT DISCLOSURES Copyright© 2013 by GSA. All rights reserved. GSA grants a worldwide license to all model developers to add their data, contact information and logo to a copy of the GSA Mixed-Signal/RF SPICE Model Checklist and distribute it to their partners, prospects and customers; however, all references to GSA, including GSA logo and GSA references may not be altered in any way. GSA makes no claims to the accuracy of the data entered on an GSA Mixed-Signal/RF SPICE Model Checklist. Checklist Form Version 1.4 Page 7 Max Freq