AP15N03GH/J RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Low Gate Charge D ▼ Simple Drive Requirement ▼ Fast Switching BVDSS 30V RDS(ON) 80mΩ ID G 15A S Description TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP15N03GJ) is available for low-profile applications. G G D D S TO-252(H) S TO-251(J) Rating Units Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 15 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 9 A 50 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 26 W Linear Derating Factor 0.21 W/℃ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice 3 Value Unit 4.8 ℃/W 62.5 ℃/W 110 ℃/W 1 200811193 AP15N03GH/J Electrical Characteristics@T j=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 30 - - V - 0.037 - V/℃ VGS=10V, ID=8A - - 80 mΩ VGS=4.5V, ID=6A - - 100 mΩ BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) VGS=0V, ID=250uA Static Drain-Source On-Resistance 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=8A - 7 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V ` - 1 uA Drain-Source Leakage Current (Tj=150 C) VDS=24V, VGS=0V - - 25 uA Gate-Source Leakage VGS=+20V - - +100 nA ID=8A - 4.6 nC o IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=24V - 1.1 nC Qgd Gate-Drain ("Miller") Charge VGS=5V - 3 nC VDS=15V - 4.9 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=8A - 22.5 - ns td(off) Turn-off Delay Time RG=3.4Ω,VGS=10V - 12.2 - ns tf Fall Time RD=1.9Ω - 3.3 - ns Ciss Input Capacitance VGS=0V - 160 - pF Coss Output Capacitance VDS=25V - 107 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 32 - pF Min. Typ. - - 15 A - - 50 A - - 1.3 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.3V Continuous Source Current ( Body Diode ) 1 Pulsed Source Current ( Body Diode ) Forward On Voltage 2 IS=15A, VGS=0V Max. Units Notes: 1.Pulse width limited by Maximum junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP15N03GH/J 30 40 10V 8.0V ID , Drain Current (A) 10V 8.0V T C = 1 50 o C ID , Drain Current (A) o T C = 25 C 30 6.0V 20 V G =4.0V 6.0V 20 10 V G =4.0V 10 0 0 0 1 2 3 4 5 0 6 1 Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 2.0 90 I D =8A I D =8A V G =10V T C =25 o C Normalized RDS(ON) 80 RDS(ON) (mΩ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 70 60 1.6 1.2 0.8 50 40 0.4 2 4 6 8 -50 10 0 50 100 150 T j , Junction Temperature ( o C) V GS Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2 12 10 1.8 o T j =150 C T j =25 C VGS(th) (V) 8 IS (A) o 6 1.6 1.4 4 1.2 2 0 1 0 0.4 0.8 1.2 V SD (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 -25 0 25 50 75 100 125 150 T j , Junction Temperature( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP15N03GH/J f=1.0MHz 16 500 400 V DS =16V V DS =20V V DS =24V 12 C (pF) VGS , Gate to Source Voltage (V) I D =8A 8 300 200 C iss 4 C oss 100 C rss 0 0 0 2 4 6 8 1 10 5 9 13 17 21 25 29 V DS (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 Normalized Thermal Response (Rthjc) 1 100us 10 ID (A) 1ms 10ms 100ms DC 1 o T C =25 C Single Pulse Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 0.1 1 10 100 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 5V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-252 D D1 E2 E3 B1 F1 e Millimeters SYMBOLS E1 MIN NOM MAX A2 1.80 2.30 2.80 A3 0.40 0.50 0.60 B1 0.40 0.70 1.00 D 6.00 6.50 7.00 D1 4.80 5.35 5.90 E3 3.50 4.00 4.50 F 2.20 2.63 3.05 F1 0.50 0.85 1.20 E1 5.10 5.70 6.30 E2 0.50 1.10 1.80 e -- 2.30 -- C 0.35 0.50 0.65 F e 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. R : 0.127~0.381 A2 A3 (0.1mm C Part Marking Information & Packing : TO-252 Laser Marking Part Number 15N03GH Package Code Meet Rohs requirement for low voltage MOSFET only LOGO YWWSSS Date Code (YWWSSS) Y:Last Digit Of The Year WW:Week SSS:Sequence 5 ADVANCED POWER ELECTRONICS CORP. Package Outline : TO-251 D Millimeters A SYMBOLS c1 D1 E2 E1 E A1 B2 F B1 c e MIN NOM MAX A 2.20 2.30 2.40 A1 0.90 1.20 1.50 B1 0.40 0.60 0.80 B2 0.60 0.85 1.05 c c1 0.40 0.50 0.60 0.40 0.50 0.60 D 6.40 6.60 6.80 D1 4.80 5.20 5.50 E 6.70 7.00 7.30 E1 5.40 5.60 5.80 E2 1.30 1.50 1.70 e ---- 2.30 ---- F 7.00 8.30 9.60 1.All Dimensions Are in Millimeters. 2.Dimension Does Not Include Mold Protrusions. e Part Marking Information & Packing : TO-251 Part Number 15N03GJ YWWSSS meet Rohs requirement for low voltage MOSFET only Package Code LOGO Date Code (YWWSSS) Y :Last Digit Of The Year WW :Week SSS :Sequence 6