AP6679GS/P
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
G
BVDSS
-30V
RDS(ON)
9mΩ
ID
-75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP) are
available for low-profile applications.
G
Absolute Maximum Ratings
Parameter
Symbol
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
D
TO-220(P)
S
Rating
Units
-30
V
+25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-75
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-50
A
-300
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
4
Value
Unit
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
40
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200812304
AP6679GS/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-30A
-
-
9
mΩ
VGS=-4.5V, ID=-24A
-
-
15
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-24A
-
34
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +25, VDS=0V
-
-
+100
nA
ID=-16A
-
42
67
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
25
-
nC
VDS=-15V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-16A
-
35
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
58
-
ns
tf
Fall Time
RD=0.94Ω
-
78
-
ns
Ciss
Input Capacitance
VGS=0V
-
2870 4590
pF
Coss
Output Capacitance
VDS=-25V
-
960
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
740
-
pF
Min.
Typ.
IS=-24A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
47
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
43
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is -75A .
4.Surface mounted on 1 in2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GS/P
150
280
-ID , Drain Current (A)
-ID , Drain Current (A)
200
-6.0V
160
-4.5V
120
-10V
-8.0V
T C =150 o C
-10V
-8.0V
T C =25 o C
240
80
-6.0V
100
-4.5V
50
V G =-3.0V
V G =-3.0V
40
0
0
0
0.5
1
1.5
2
2.5
3
3.5
0.0
4
-V DS , Drain-to-Source Voltage (V)
0.5
1.0
1.5
2.0
2.5
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
15
1.6
I D = -30A
V G = -10V
I D = -24A
T C = 25 ℃
1.4
Normalized RDS(ON)
RDS(ON) (mΩ )
13
11
1.2
1.0
9
0.8
0.6
7
2
4
6
8
10
-50
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
30
2.2
1.8
T j =150 o C
-VGS(th) (V)
-IS(A)
20
T j =25 o C
1.4
10
1
0
0.6
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GS/P
7
f=1.0MHz
10000
C iss
5
I D = -16A
V DS = -24V
4
C (pF)
-VGS , Gate to Source Voltage (V)
6
1000
C oss
C rss
3
2
1
0
100
0
10
20
30
40
50
60
1
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100us
-ID (A)
100
1ms
10
10ms
100ms
1s
DC
o
T C =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
-4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-263
E
E3
SYMBOLS
E1
E2
D2
D1
D
b1
L2
L3
e
MIN
NOM
MAX
A
4.25
4.75
5.20
A1
0.00
0.15
0.30
A2
2.20
2.45
2.70
b
0.70
0.90
1.10
b1
1.07
1.27
1.47
c
0.30
0.45
0.60
c1
1.15
1.30
1.45
D
8.30
8.90
9.40
D1
5.10(ref)
D2
1.27(ref)
E
b
L4
E2
6.40(ref)
E3
8.00(ref)
2.04
2.54(ref)
L2
1.50
4.50
L4
c θ
2.54
L1
θ
c1
c1
10.10
7.40(ref)
L3
A2
9.70
E1
e
A
A
Millimeters
4.90
10.50
3.04
5.30
1.50
0°
-----
5°
1.All Dimensions Are in Millimeters.
A1
A1
2.Dimension Does Not Include Mold Protrusions.
L1
Part Marking Information & Packing : TO-263
Part Number
6679GS
YWWSSS
meet Rohs requirement
for low voltage MOSFET only
Package Code
LOGO
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.60
3.10
3.60
L4
14.70
15.50
16.00
L1
L
c
b
L5
6.30
6.50
6.70
φ
3.50
3.70
3.90
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
6679GP
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
6