AP2763I-A
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Isolation Full Package
BVDSS
750V
RDS(ON)
1.45Ω
ID
▼ Fast Switching Characteristics
8.0A
G
S
Description
AP2763 series are specially designed as main switching devices for
universal 90~265VAC off-line AC/DC converter applications.
TO-220CFM type provide high blocking voltage to overcome voltage surge
G
and sag in the toughest power system with the best combination of fast
D
S
switching,ruggedized design and cost-effectiveness.
TO-220CFM(I)
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
750
V
VGS
Gate-Source Voltage
±30
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
8.0
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
5.0
A
30
A
50
W
0.4
W/℃
32
mJ
8.0
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
2
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
2.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
65
℃/W
Data & specifications subject to change without notice
1
200810233
AP2763I-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
750
-
-
V
-
0.9
-
V/℃
VGS=10V, ID=4.0A
-
-
1.45
Ω
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=1mA
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
3
Max. Units
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
2
-
4
V
gfs
Forward Transconductance
VDS=10V, ID=4.0A
-
7
-
S
IDSS
Drain-Source Leakage Current
VDS=750V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=±30V
-
-
±100
nA
ID=4A
-
47
75
nC
3
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=600V
-
8.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=10V
-
20
-
nC
3
td(on)
Turn-on Delay Time
VDD=360V
-
15
-
ns
tr
Rise Time
ID=4A
-
13
-
ns
td(off)
Turn-off Delay Time
RG=10Ω,VGS=10V
-
74
-
ns
tf
Fall Time
RD=90Ω
-
21
-
ns
Ciss
Input Capacitance
VGS=0V
-
1880 3010
pF
Coss
Output Capacitance
VDS=25V
-
140
-
pF
Crss
Rg
Reverse Transfer Capacitance
f=1.0MHz
-
9
-
pF
Gate Resistance
f=1.0MHz
-
2.6
3.9
Ω
Min.
Typ.
IS=4.0A, VGS=0V
-
-
1.5
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
3
3
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=4.0A, VGS=0V,
-
400
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
7
-
µC
Notes:
1.Pulse width limited by max. junction temperature.
o
2.Starting Tj=25 C , VDD=50V , RG=25Ω , IAS=8.0A.
3.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2763I-A
5.0
5.00
10V
7.0V
5.0V
ID , Drain Current (A)
4.0
10V
7.0V
5.0V
4.5V
T C =150 o C
4.00
ID , Drain Current (A)
o
T C =25 C
3.0
4.5V
2.0
3.00
2.00
V G =4.0V
1.00
1.0
V G =4.0V
0.00
0.0
0
2
4
6
8
10
0
8
12
16
20
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
3.0
1.2
I D = 4.0 A
V G =10V
Normalized RDS(ON)
2.5
Normalized BVDSS (V)
4
V DS , Drain-to-Source Voltage (V)
1.1
1.0
2.0
1.5
1.0
0.9
25
0.5
0.0
0.8
-50
0
50
100
-50
150
0
50
100
150
T j , Junction Temperature ( o C )
o
Junction Temperature ( C)
Fig 3. Normalized BVDSS v.s. Junction
Fig 4. Normalized On-Resistance
Temperature
v.s. Junction Temperature
1.6
10.0
T j =150 o C
T j =25 o C
IS(A)
6.0
Normalized VGS(th) (V)
8.0
4.0
1.2
0.8
2.0
0.0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2763I-A
f=1.0MHz
14
10000
I D = 4.5 A
V DS = 380 V
V DS = 480 V
V DS = 600 V
10
C iss
1000
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
4
C rss
10
2
0
1
0
10
20
30
40
50
1
60
5
9
13
17
21
25
29
Q G , Total Gate Charge (nC)
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100.00
100us
1ms
1.00
10ms
100ms
0.10
1s
DC
T C =25 o C
Single Pulse
Normalized Thermal Response (Rthjc)
1
10.00
ID (A)
C oss
100
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
T
0.02
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
25
Single Pulse
0.01
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
10V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220CFM
E
A
Millimeters
SYMBOLS
c2
φ
L4
MIN
NOM
MAX
A
4.30
4.70
4.90
A1
2.30
2.65
3.00
b
b1
c
c2
0.50
0.70
0.90
0.95
1.20
1.50
0.45
0.65
0.80
2.30
2.60
2.90
E
9.70
10.00
10.40
L
12.50
13.00
13.50
L3
2.91
3.41
3.91
L4
14.70
15.40
16.10
φ
e
----
3.20
----
----
2.54
----
L3
A1
b1
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
L
b
c
e
Part Marking Information & Packing : TO-220CFM
Option
A
LOGO
2763I
Part Number
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5