AP95T06AGP
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower On-resistance
▼ Fast Switching Characteristic
BVDSS
60V
RDS(ON)
8.5mΩ
ID
G
75A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
D
TO-220(P)
S
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
3
Rating
Units
60
V
+20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
75
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
66
A
260
A
138
W
1.11
W/℃
450
mJ
30
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
Linear Derating Factor
4
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
0.9
℃/W
62
℃/W
1
200812023
AP95T06AGP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=1mA
60
-
-
V
VGS=10V, ID=45A
-
-
8.5
mΩ
VGS=4.5V, ID=20A
-
-
12
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=45A
-
75
-
S
IDSS
Drain-Source Leakage Current
VDS=60V, VGS=0V
-
-
10
uA
Drain-Source Leakage Current (T j=150 C) VDS=48V ,VGS=0V
-
-
100
uA
Gate-Source Leakage
VGS= +20V
-
-
+100
nA
ID=45A
-
40
115
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=48V
-
11
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
27
-
nC
VDS=30V
-
14
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=45A
-
71
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
44
-
ns
tf
Fall Time
RD=0.67Ω
-
99
-
ns
Ciss
Input Capacitance
VGS=0V
-
3900 6000
pF
Coss
Output Capacitance
VDS=25V
-
430
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
300
-
pF
Min.
Typ.
IS=45A, VGS=0V
-
-
1.3
V
IS=20A, VGS=0V
-
47
-
ns
dI/dt=100A/µs
-
73
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
2
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Package limitation current is 75A, calculated continuous current
based on maximum allowable junction temperature is 97A.
4.Starting Tj=25oC , VDD=30V , L=1mH , RG=25Ω , IAS=30A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP95T06AGP
250
160
T C = 150 C
ID , Drain Current (A)
10V
7.0 V
200
ID , Drain Current (A)
10V
7.0 V
5.0V
o
T C = 25 o C
5.0V
150
4.5V
100
V G = 4 .0V
120
4.5V
80
V G = 4.0 V
40
50
0
0
0
2
4
6
0
8
2
8
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
I D =45A
V G =10V
I D =20A
o
T C =25 C
1.6
Normalized RDS(ON)
12
RDS(ON) (mΩ)
6
V DS , Drain-to-Source Voltage (V)
14
10
8
1.2
0.8
6
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
Normalized VGS(th) (V)
40
30
IS(A)
4
V DS , Drain-to-Source Voltage (V)
T j =150 o C
T j =25 o C
20
1.5
1.0
0.5
10
0.0
0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP95T06AGP
f=1.0MHz
14
10000
I D = 45 A
C iss
V DS = 30 V
V DS = 36 V
V DS = 48 V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
1000
C oss
4
C rss
2
100
0
0
10
20
30
40
50
60
70
1
80
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
1000
ID (A)
100
100us
1ms
10
10ms
o
T c =25 C
Single Pulse
100ms
DC
1
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
1
10
100
1000
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4
ADVANCED POWER ELECTRONICS CORP.
Package Outline : TO-220
E1
A
E
Millimeters
SYMBOLS
φ
L2
L5
c1
D
L4
b1
L3
MIN
NOM
MAX
A
4.25
4.48
4.70
b
b1
c
c1
0.65
0.80
0.90
1.15
1.38
1.60
0.40
0.50
0.60
1.00
1.20
1.40
E
9.70
10.00
10.40
E1
---
---
11.50
e
----
2.54
----
L
12.70
13.60
14.50
L1
2.60
2.80
3.00
L2
1.00
1.40
1.80
L3
2.60
3.10
3.60
L4
14.70
15.50
16.00
L1
L
c
b
L5
6.30
6.50
6.70
φ
3.50
3.70
3.90
D
8.40
8.90
9.40
1.All Dimensions Are in Millimeters.
2.Dimension Does Not Include Mold Protrusions.
e
Part Marking Information & Packing : TO-220
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
95T06AGP
LOGO
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
If last "S" is numerical letter : Rohs product
If last "S" is English letter : HF & Rohs product
5