AP9T15GH/J
RoHS-compliant Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Capable of 2.5V Gate Drive
▼ Single Drive Requirement
G
▼ RoHS Compliant
BVDSS
20V
RDS(ON)
50mΩ
ID
12.5A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G D
G
D
S
S
TO-252(H)
TO-251(J)
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
+16
V
ID@TC=25℃
Continuous Drain Current, V GS @ 4.5V
12.5
A
ID@TC=100℃
Continuous Drain Current, V GS @ 4.5V
8
A
60
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
12.5
W
Linear Derating Factor
0.1
W/℃
2
W
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount) 3
62.5
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
110
℃/W
Data and specifications subject to change without notice
1
201009303
AP9T15GH/J
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Min.
Typ.
20
-
-
V
VGS=4.5V, ID=6A
-
-
50
mΩ
VGS=2.5V, ID=5.2A
-
-
80
mΩ
0.5
-
1.5
V
VGS=0V, ID=250uA
Static Drain-Source On-Resistance
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
gfs
Forward Transconductance
VDS=5V, ID=10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
Drain-Source Leakage Current (T j=125 C) VDS=16V ,VGS=0V
-
-
250
uA
Gate-Source Leakage
VGS=+16V, VDS=0V
-
-
+100
nA
ID=10A
-
5
8
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
1
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2
-
nC
2
td(on)
Turn-on Delay Time
VDS=10V
-
8
-
ns
tr
Rise Time
ID=10A
-
55
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=5V
-
10
-
ns
tf
Fall Time
RD=1Ω
-
3
-
ns
Ciss
Input Capacitance
VGS=0V
-
360
580
pF
Coss
Output Capacitance
VDS=20V
-
70
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
50
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.67
-
Ω
Min.
Typ.
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
IS=10A, VGS=0V
-
-
1.3
V
trr
Reverse Recovery Time2
IS=10A, VGS=0V,
-
17
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
9
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
2
3.Surface mounted on 1 in copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9T15GH/J
50
40
o
T C = 150 o C
T C =25 C
ID , Drain Current (A)
ID , Drain Current (A)
5.0V
4.5V
40
30
3.5V
20
2.5V
30
5.0V
4.5V
20
3.5V
10
2.5V
10
V G =1.5V
V G =1.5V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
45
1.8
I D = 5.2 A
43
I D =6A
V G =4.5V
1.6
o
Normalized RDS(ON)
RDS(ON) (mΩ)
T C =25 C
41
39
37
35
1.4
1.2
1.0
0.8
33
0.6
0
2
4
6
8
10
-50
V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
Normalized VGS(th) (V)
8
IS(A)
6
T j =150 o C
T j =25 o C
4
1.5
1.0
0.5
2
0
0.0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9T15GH/J
f=1.0MHz
14
1000
I D =10A
C iss
V DS =10V
V DS =12V
V DS =16V
10
8
C (pF)
VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
10
0
0
2
4
6
8
10
1
12
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
Normalized Thermal Response (Rthjc)
100
Operation in this
area limited by
RDS(ON)
100us
ID (A)
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor = 0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty Factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off)tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4