AP92T12GI-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Lower On-resistance ▼ RoHS Compliant & Halogen-Free BVDSS 120V RDS(ON) 8.5mΩ ID G 53A S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercial-industrial through hole applications. Absolute Maximum Ratings Parameter Symbol Rating Units VDS Drain-Source Voltage 120 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, V GS@10V 53 A ID@TC=100℃ Continuous Drain Current, V GS@10V 38 A 200 A 60 W 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Thermal Data Symbol Parameter Value Units Rthj-c Maximum Thermal Resistance, Junction-case 2.5 ℃/W Rthj-a Maixmum Thermal Resistance, Junction-ambient 65 ℃/W Data and specifications subject to change without notice 1 200911251 AP92T12GI-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 120 - - V RDS(ON) Static Drain-Source On-Resistance 2 VGS=10V, ID=30A - - 8.5 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V gfs Forward Transconductance VDS=10V, ID=30A - 62 - S IDSS Drain-Source Leakage Current VDS=96V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=30A - 97 155 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=96V - 27 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 48 - nC 2 td(on) Turn-on Delay Time VDS=60V - 27 - ns tr Rise Time ID=30A - 96 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 42 - ns tf Fall Time RD=2Ω - 60 - ns Ciss Input Capacitance VGS=0V - 4600 7360 pF Coss Output Capacitance VDS=25V - 800 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 260 - pF Rg Gate Resistance f=1.0MHz - 2 - Ω Min. Typ. IS=30A, VGS=0V - - 1.3 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions Max. Units trr Reverse Recovery Time IS=10A, VGS=0V - 80 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 260 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP92T12GI-HF 200 160 T C = 175 C ID , Drain Current (A) 160 ID , Drain Current (A) o 10V 9.0V 8.0V o T C = 25 C 120 7.0V 80 10V 9.0V 8.0V 7.0V 120 80 V GS =6.0V 40 40 V GS =6.0V 0 0 0 4 8 12 16 20 0 24 Fig 1. Typical Output Characteristics 8 12 16 Fig 2. Typical Output Characteristics 3.0 1.2 I D =30A V G =10V 2.6 1.1 Normalized RDS(ON) Normalized BVDSS (V) 4 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 1 2.2 1.8 1.4 1.0 0.9 0.6 0.2 0.8 -50 0 50 100 150 -50 200 0 Fig 3. Normalized BVDSS v.s. Junction 100 150 200 Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.6 Normalized VGS(th) (V) 40 30 IS(A) 50 T j , Junction Temperature ( o C) T j , Junction Temperature ( o C) T j =175 o C T j =25 o C 20 1.2 0.8 0.4 10 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 200 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP92T12GI-HF f=1.0MHz 6000 I D = 30 A V DS =96V 10 5000 C iss 4000 8 C (pF) VGS , Gate to Source Voltage (V) 12 6 3000 4 2000 2 1000 C oxx C rss 0 0 0 20 40 60 80 100 1 120 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1000 Operation in this area limited by RDS(ON) ID (A) 100 Normalized Thermal Response (Rthjc) Duty factor=0.5 100us 1ms 10ms 10 100ms 1s 1 o T c =25 C Single Pulse DC 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t T Single Pulse Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.1 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4