AP72T03GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
▼ Simple Drive Requirement
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
▼ Low On-resistance
▼ Fast Switching Characteristic
BVDSS
30V
RDS(ON)
9.5mΩ
ID
G
65A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 package is widely preferred for commercial-industrial
power applications and suited for low voltage applications such as
DC/DC converters.
TO-220(P)
D
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage
+ 20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
65
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
47
A
190
A
70
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
.
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
2.1
℃/W
62
℃/W
1
201001072
AP72T03GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=10V, ID=30A
-
-
9.5
mΩ
VGS=4.5V, ID=15A
-
-
17
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=30A
-
37
-
S
IDSS
Drain-Source Leakage Current
VDS=24V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS= +20V, VDS=0V
-
-
+100
nA
ID=30A
-
15
24
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
3
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
10
-
nC
VDS=15V
-
8
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=30A
-
82
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
20
-
ns
tf
Fall Time
RD=0.5Ω
-
8
-
ns
Ciss
Input Capacitance
VGS=0V
-
940
1500
pF
Coss
Output Capacitance
VDS=25V
-
260
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
180
-
pF
Rg
Gate Resistance
f=1.0MHz
-
0.9
1.4
Ω
Min.
Typ.
IS=30A, VGS=0V
-
-
1.2
V
IS=10A, VGS=0V,
-
28
-
ns
dI/dt=100A/µs
-
22
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP72T03GP
160
200
10V
o
T C =25 C
10V
o
T C =175 C
7.0V
7.0V
ID , Drain Current (A)
ID , Drain Current (A)
160
120
6.0V
80
5.0V
120
6.0V
5.0V
80
V G = 4.0V
40
40
V G = 4.0V
0
0
0
1
2
3
4
5
6
0
2
3
4
5
6
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
16
1.8
I D =15A
T C =25 ℃
I D =30A
V G =10V
Normalized RDS(ON)
14
RDS(ON) (mΩ)
1
V DS , Drain-to-Source Voltage (V)
12
10
1.4
1
8
0.6
6
2
4
6
8
-50
10
0
50
100
150
200
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.8
Normalized VGS(th) (V)
30
IS(A)
20
T j =175 o C
T j =25 o C
10
0
1.2
0.6
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
200
T j , Junction Temperature ( o C )
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP72T03GP
f=1.0MHz
10
1600
VGS , Gate to Source Voltage (V)
I D = 30 A
8
1200
6
C (pF)
V DS = 15 V
V DS = 18 V
V DS = 24 V
C iss
800
4
400
C oss
C rss
2
0
0
0
5
10
15
20
25
1
30
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Operation in this area
limited by RDS(ON)
100us
ID (A)
100
Normalized Thermal Response (R thjc)
1
10
1ms
10ms
100ms
DC
T c =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig10. Effective Transient Thermal Impedance
VG
90%
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4