AP9435GP
RoHS-compliant Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Low Gate Charge
D
▼ Simple Drive Requirement
▼ Fast Switching
G
BVDSS
-30V
RDS(ON)
50mΩ
ID
- 15A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
G
The TO-220 package is widely preferred for commercial-industrial
through-hole applications and suited for low voltage applications such
as DC/DC converters.
D
TO-220(P)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
- 30
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current
-15
A
ID@TC=100℃
Continuous Drain Current
-8
A
1
IDM
Pulsed Drain Current
-60
A
PD@TC=25℃
Total Power Dissipation
12.5
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Units
Rthj-c
Maximum Thermal Resistance, Junction-case
10
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
200902252
AP9435GP
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=-250uA
-30
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=-10V, ID=-10A
-
-
50
mΩ
VGS=-4.5V, ID=-5A
-
-
90
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-10A
-
10
-
S
IDSS
Drain-Source Leakage Current
VDS=-30V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-24V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS=+ 20V, VDS=0V
-
-
+100
nA
ID=-10A
-
8
16
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-24V
-
1.6
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
4.3
-
nC
VDS=-15V
-
6.3
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-10A
-
46
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
20
-
ns
tf
Fall Time
RD=1.5Ω
-
7.4
-
ns
Ciss
Input Capacitance
VGS=0V
-
570
740
pF
Coss
Output Capacitance
VDS=-25V
-
80
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
75
-
pF
Min.
Typ.
IS=-10A, VGS=0V
-
-
-1.3
V
IS=-10A, VGS=0V,
-
18
-
ns
dI/dt=-100A/µs
-
10
-
nC
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Test Conditions
Max. Units
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP9435GP
80
70
T C =25 o C
-10V
o
T C =150 C
-8.0V
-ID , Drain Current (A)
-ID , Drain Current (A)
60
60
-6.0V
40
-4.5V
20
-10V
-8.0V
50
40
-6.0V
30
-4.5V
20
V G =-4.0V
V G =-4.0V
10
0
0
0
2
4
6
8
10
0
-V DS , Drain-to-Source Voltage (V)
2
4
6
8
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
90
I D =-10A
T C =25 ℃
I D =-10A
V G =-10V
1.8
80
Normalized RDS(ON)
RDS(ON) (mΩ)
1.6
70
60
50
1.4
1.2
1.0
40
0.8
30
0.6
2
4
6
8
10
-50
-V GS , Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
3
10
-VGS(th) (V)
8
-IS(A)
6
T j =150 o C
T j =25 o C
2
4
1
2
0
0
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP9435GP
f=1.0MHz
1000
14
I D =-10A
V DS =-24V
C iss
10
8
C (pF)
-VGS , Gate to Source Voltage (V)
12
6
100
C oss
C rss
4
2
0
10
0
2
4
6
8
10
12
14
16
18
20
1
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Duty factor=0.5
10
-ID(A)
100us
1ms
10ms
100ms
DC
1
o
T C =25 C
Single Pulse
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
0.0001
Fig 9. Maximum Safe Operating Area
0.001
0.01
0.1
1
t , Pulse Width (s)
-V DS , Drain-to-Source Voltage (V)
Fig 10. Effective Transient Thermal Impedance
VG
VDS
90%
QG
-4.5V
QGS QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
4