AP2322GN-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Capable of 1.8V gate drive
D
▼ Simple Drive Requirement
BVDSS
20V
RDS(ON)
90mΩ
ID
▼ Surface mount package
2.5A
S
▼ RoHS Compliant & Halogen-Free
SOT-23
G
D
Description
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
G
S
The SOT-23 package is widely used for commercial-industrial applications.
Absolute Maximum Ratings
Symbol
Parameter
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
Rating
Units
20
V
+8
V
3
2.5
A
3
2.0
A
10
A
0.833
W
Continuous Drain Current , VGS @ 4.5V
Continuous Drain Current , VGS @ 4.5V
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
150
℃/W
1
201009173
AP2322GN-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
20
-
-
V
RDS(ON)
Static Drain-Source On-Resistance2
VGS=4.5V, ID=1.6A
-
-
90
mΩ
VGS=2.5V, ID=1A
-
-
120
mΩ
VGS=1.8V, ID=0.3A
-
-
150
mΩ
0.25
-
1
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=1mA
gfs
Forward Transconductance
VDS=5V, ID=2A
-
2
-
S
IDSS
Drain-Source Leakage Current
VDS=20V, VGS=0V
-
-
1
uA
IGSS
Gate-Source Leakage
VGS=+8V, VDS=0V
-
-
+100
nA
ID=2.2A
-
7
11
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=16V
-
0.7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
2.5
-
nC
VDS=10V
-
6
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=1A
-
12
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
16
-
ns
tf
Fall Time
VGS=5V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
350
560
pF
Coss
Output Capacitance
VDS=20V
-
55
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
48
-
pF
Rg
Gate Resistance
f=1.0MHz
-
3.2
4.8
Ω
Min.
Typ.
IS=0.7A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=2A, VGS=0V,
-
20
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
13
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2322GN-HF
10
10
o
5.0V
4.0V
3.0V
2.5V
ID , Drain Current (A)
8
o
5.0V
4. 0 V
3.0 V
2.5V
V G = 2.0 V
T A = 150 C
8
ID , Drain Current (A)
T A =25 C
V G = 2.0 V
6
4
6
4
2
2
0
0
0
0.5
1
1.5
0
2
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
1.6
I D =0.3A
I D = 1.6 A
V G =4.5V
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
100
80
1.2
1.0
60
0.8
40
0.6
0
2
4
6
8
10
-50
0
50
100
150
o
V GS , Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
0.8
5
4
T j =25 o C
Normalized VGS(th) (V)
T j =150 o C
IS(A)
3
2
0.6
0.4
0.2
1
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP2322GN-HF
f=1.0MHz
12
1000
V DS =8V
V DS =12V
V DS =16V
C iss
8
C (pF)
VGS , Gate to Source Voltage (V)
I D =2.2A
10
6
100
C oss
C rss
4
2
0
10
0
4
8
12
1
16
5
9
13
17
21
25
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthja)
Duty factor=0.5
10
ID (A)
1ms
1
10ms
100ms
0.1
o
T A =25 C
Single Pulse
1s
DC
0.2
0.1
0.1
0.05
PDM
t
T
0.01
0.01
Single Pulse
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja = 360℃/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
10
100
1000
V DS , Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
10
V DS =5V
VG
ID , Drain Current (A)
8
T j =25 o C
T j =150 o C
QG
4.5V
6
QGS
QGD
4
2
Charge
Q
0
0
1
2
3
V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Circuit
4