AP2314GN-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Capable of 2.5V gate drive ▼ Lower on-resistance D BVDSS 20V RDS(ON) 75mΩ ID ▼ Surface mount package ▼ RoHS Compliant & Halogen-Free S SOT-23 Description 3.5A G Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. D The SOT-23 package is widely used for commercial-industrial applications. G S Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Rating Units 20 V +12 V 3 3.5 A 3 2.8 A 10 A 0.83 W Continuous Drain Current , VGS @ 4.5V Continuous Drain Current , VGS @ 4.5V 1 IDM Pulsed Drain Current PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 3 Value Unit 150 ℃/W 1 201006214 AP2314GN-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. 20 - - V - 0.02 - V/℃ VGS=4.5V, ID=3.5A - - 75 mΩ VGS=2.5V, ID=1.2A - - 125 mΩ 0.5 - 1.2 V BVDSS Drain-Source Breakdown Voltage ∆BVDSS/∆Tj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA RDS(ON) Static Drain-Source On-Resistance VGS=0V, ID=250uA 2 Max. Units VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA gfs Forward Transconductance VDS=5V, ID=3A - 7 - S IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 1 uA Drain-Source Leakage Current (Tj=70oC) VDS=16V ,VGS=0V - - 10 uA Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA ID=3A - 4 7 nC IGSS 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=16V - 0.7 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 2 - nC VDS=15V - 6 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=1A - 8 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 10 - ns tf Fall Time RD=15Ω - 3 - ns Ciss Input Capacitance VGS=0V - 230 370 pF Coss Output Capacitance VDS=20V - 55 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 40 - pF Rg Gate Resistance f=1.0MHz - 1.1 1.7 Ω Min. Typ. IS=1.2A, VGS=0V - - 1.2 V Source-Drain Diode Symbol VSD Parameter 2 Forward On Voltage 2 Test Conditions Max. Units trr Reverse Recovery Time IS=3A, VGS=0V, - 16 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 8 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board , t <10sec ; 360 ℃/W when mounted on Min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP2314GN-HF 15 15 5.0V 4.5V 3.0V ID , Drain Current (A) 5.0V 4.5V o T A = 150 C ID , Drain Current (A) o T A =25 C 10 2.5V 5 3.0 V 10 2.5V 5 V G = 1 .5V V G = 1. 5V 0 0 0 1 2 3 0 1 V DS , Drain-to-Source Voltage (V) 2 3 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 1.6 I D =1.2A I D = 3.5 A V G =4.5V T A =25 o C Normalized RDS(ON) RDS(ON) (mΩ) 1.4 80 60 1.2 1.0 0.8 40 0.6 2 4 6 8 10 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 Normalized VGS(th) (V) 1.6 2 IS(A) T j =150 o C T j =25 o C 1 1.2 0.8 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP2314GN-HF f=1.0MHz 12 1000 V DS =10V V DS =12V V DS =16V 8 C iss C (pF) VGS , Gate to Source Voltage (V) I D =3A 10 6 100 C oss 4 C rss 2 0 10 0 2 4 6 8 1 5 9 13 17 21 25 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 100 Normalized Thermal Response (Rthja) Duty factor=0.5 ID (A) 10 1ms 1 10ms 100ms 0.1 o 1s DC T A =25 C Single Pulse 0.01 0.2 0.1 0.1 0.05 PDM t 0.01 T 0.01 Single Pulse Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 360℃/W 0.001 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000 V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 15 VG ID , Drain Current (A) V DS =5V T j =25 o C 10 QG T j =150 o C 4.5V QGS QGD 5 Charge Q 0 0 2 4 6 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Circuit 4