ACE5208 P-Channel Power MOSFET Description The ACE5208 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltage. This device is suitable for use as a load switching application and a wide variety of other applications. Features • • Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Applications • • • PWM application Load switch Battery charge in cellular handset Absolute Maximum Ratings Drain-Source Voltage Symb ol VDSS Gate-Source Voltage VGS ±8 Drain Current-Continuous ID -6 Drain Current-Pulsed (note 1) IDM -20 Parameter Power Dissipation (note 2, TA=25℃) Maximum Power Dissipation (note 3, TC=25℃) PD Thermal Resistance from Junction to Ambient (note 4) RθJA Max -12 1.5 12 83.3 Thermal Resistance from Junction to case (note 4) RθJC 10.4 Junction Temperature TJ 150 Storage Temperature TSTG -55~+150 Unit V A W ℃/W ℃ Packaging Type VER 1.2 1 ACE5208 P-Channel Power MOSFET Ordering information ACE5208 XX + H Halogen - free Pb - free LN : DFNWB2*2-6L Electrical Characteristics (TA=25 OC unless otherwise noted) Parameter Symbol Conditions Min. Typ. Max. Unit Off characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=-250uA -12 V Zero Gate Voltage Drain Current IDSS VDS=-12V, VGS=0V -1 uA Gate-Body Leakage Current IGSS VGS=±8V, VDS=0V ±120 nA On characteristics (note 5) VGS=-4.5V, ID=-6.7A 25 30 VGS=-2.5V, ID=-6.2A 30 50 -0.4 -0.7 -1 8 18 Drain-Source On-state Resistance RDS(ON) Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250uA Forward Transconductance gFS VDS=-5V, ID=-2.8A mΩ V S Dynamic characteristics (note 6) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-6V, VGS=0V f=1 MHz VDS=-6V, VGS=-8V, ID=-10A VDS=-6V, VGS=-4.5V, ID=-10A 1280 250 pF 240 14 21 6.5 nC 2.5 3.5 Drain-source diode characteristics Diode Forward Current (note 5) IS Diode Forward Voltage (note 4) VSD ISD=-1.25A,VGS=0V 1.2 -1.4 A 1.0 -1.2 V VER 1.2 2 ACE5208 P-Channel Power MOSFET Typical Performance Characteristics VER 1.2 3 ACE5208 P-Channel Power MOSFET DFNWB2X2-6L Tape and Reel DFNWB2X2-6L Embossed Carrier Tape A - A Dimensions are in millimeter Pkg type a B C d E F P0 P P1 W DFNWB2X2-6L 2.30 2.30 1.10 ∅1.50 1.75 3.50 4.00 4.00 2.00 8.00 DFNWB2X2-6L Tape Leader and Trailer Typical Performance Characteristics DFNWB2*2-6L Reel Dimensions are in millimeter Reel Option D D1 D2 G H I W1 W2 7”Dia ∅180.00 60.00 13.00 R78.00 R25.60 R6.50 9.50 13.10 REEL Reel Size Box Box Size(mm) Carton 3000pcs 7 inch 30,000pcs 203*203*195 120,000pcs Carton Size(mm) G.W.(kg) 438*438*220 VER 1.2 4 ACE5208 P-Channel Power MOSFET Packing Information DFNWB2*2-6L Package Outline Dimensions(Umit:mm) Packing Information DFNWB2*2-6L Package Outline Dimensions(Umit:mm) SIDE VIEW TOP VIEW BOTTOM VIEW VER 1.2 5 ACE5208 P-Channel Power MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 6