ACE3926E Dual N-Channel 20-V MOSFET Description The ACE3926E utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • • • Low rDS(on) trench technology Low thermal impedance Fast switching speed Applications • • • Power Routing Li Ion Battery Packs Level Shifting and Driver Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 V TA=25℃ Continuous Drain Current a ID TA=70℃ Pulsed Drain Current b Continuous Source Current (Diode Conduction) a TA=25℃ Power Dissipation a TA=70℃ Operating temperature / storage temperature 13 10 A IDM 50 A IS 7 A PD 2.5 1.5 TJ/TSTG -55~150 W ℃ THERMAL RESISTANCE RATINGS Symbol Parameter Maximum Junction-to-Ambient a t <= 10 sec Steady State RθJA Maximum 83 120 Units °C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature VER 1.1 1 ACE3926E Dual N-Channel 20-V MOSFET Packaging Type DFN3*3-8L Ordering information ACE3926E NN + H Halogen - free Pb - free NN : DFN3*3-8L VER 1.1 2 ACE3926E Dual N-Channel 20-V MOSFET Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 uA Gate-Body Leakage IGSS VDS = 0 V, VGS = ±12 V ±10 Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 IDSS On-State Drain Current Drain-Source On-Resistance A A Diode Forward Voltage Min Typ VDS = 5 V, VGS = 4.5 V RDS(ON) Max Unit 0.4 V 10 VDS = 16V, VGS = 0 V, TJ = 55°C ID(on) A Forward Transconductance Test Conditions Static 20 nA uA A VGS = 4.5 V ID = 2 A 10 VGS = 2.5 V, ID =1.6 A 14 mΩ gFS VDS =15 V, ID = 2 A 3 S VSD IS = 3.5 A, VGS = 0 V 0.8 V Dynamic b Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.7 Turn-On Delay Time td(on) 178 Rise Time tr Turn-Off Delay Time td(off) Fall Time tf 902 Input Capacitance Ciss 1225 Output Capacitance Coss Reverse Transfer Capacitance Crss 15 VDS = 10V, VGS = 4.5 V, ID = 2 A VDS = 10 V, RL = 5 Ω, ID = 2 A, VGEN = 4.5 V , RGEN = 6 Ω, VDS = 15 V, VGS = 0 V, f = 1 Mhz 1.9 nC 332 1939 151 ns pF 123 Note : a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing VER 1.1 3 ACE3926E Dual N-Channel 20-V MOSFET Typical Performance Characteristics ID-Drain Current (A) 1.On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 2. Transfer Characteristics VGS - Gate-to-Source Voltage (V) 3. On-Resistance vs. Gate-to-Source Voltage VGS - Gate-to-Source Voltage (V) 4. Drain-to-Source Forward Voltage VDS - Drain-to-Source Voltage (V) 5. Output Characteristics VDS-Drain-to-Source Voltage (V) 6. Capacitance VER 1.1 4 ACE3926E Dual N-Channel 20-V MOSFET Typical Performance Characteristics Qg - Total Gate Charge (nC) 7. Gate Charge VDS (V) 8. Normalized On-Resistance Vs Junction Temperature VDS Drain to Source Voltage (V) 9. Safe Operating Area t1 TIME (sec) 10.Single Pulse Maximum Power Dissipation t1 TIME (sec) 11. Normalized Thermal Transient Junction to Ambient VER 1.1 5 ACE3926E Dual N-Channel 20-V MOSFET Packing Information DFN3*3-8L SYMBOLS A A1 b c D E E1 e L L1 Θ1 DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.700 0.80 0.900 0.00 0.05 0.24 0.30 0.35 0.08 0.152 0.25 2.90BSC 2.80BSC 2.30BSC 0.65BSC 0.20 0.375 0.450 0 0.100 0 10 12 DIENSIONS IN INCHES MIN NOM MAX 0.0276 0.0315 0.0354 0.000 0.002 0.009 0.012 0.014 0.003 0.006 0.010 0.114BSC 0.110BSC 0.091BSC 0.026BSC 0.008 0.0148 0.0177 0 0.004 0 10 12 Unit: mm VER 1.1 6 ACE3926E Dual N-Channel 20-V MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 7