ACE4922 Dual N-Channel Enhancement Mode MOSFET Description The ACE4922 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching, low in-line power loss, and resistance to transients are needed. Features N-Channel 20V/0.95A, RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A, RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A, RDS(ON)=800mΩ@VGS=1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=80℃ ID 1.2 0.9 A Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.6 A Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range PD TJ TSTG 0.35 0.19 W -55/150 O C -55/150 O C VER 1.3 1 ACE4922 Dual N-Channel Enhancement Mode MOSFET Packaging Type SC-70-6 SC-70-6 Description 1 Source 1 2 Gate 1 3 Drain 2 4 Source 2 5 Gate 2 3 6 Drain 1 N-Channel N-Channel 6 1 5 2 4 Ordering information ACE4922 XX + H Halogen - free Pb - free HM : SC-70-6 VER 1.3 2 ACE4922 Dual N-Channel Enhancement Mode MOSFET Electrical Characteristics TA=25℃, unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 Gate Threshold Voltage VGS(th) VD=VGS, ID=250uA 0.35 Gate Leakage Current IGSS VDS=0V,VGS=±12V 100 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 VDS=20V, VGS=0V TJ=55℃ 5 On-State Drain Current ID(ON) VDS≧4.5V, VGS=5V V 1.0 0.7 0.26 0.38 VGS=2.5V, ID=0.75A 0.32 0.45 VGS=1.8V, ID=0.65A 0.42 0.80 gfs VDS=10V,ID=0.4A 1.0 VSD IS=0.15A, VGS=0V 0.8 1.2 1.2 1.5 RDS(ON) Forward Transconductance Diode Forward Voltage uA A VGS=4.5V, ID=0.95A Drain-Source On-Resistance nA Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 0.3 td(on) 5 10 8 15 10 18 1.2 2.8 Turn-On Time Turn-Off Time tr td(off) tf VDS=10V, VGS=4.5V, ID=0.6A VDD=10V, RL=10Ω, ID=0.5A, VGEN=4.5V, RG=6Ω 0.2 nC VER 1.3 nS 3 ACE4922 Dual N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Output Characteristics VDS-Drain-to-Source Voltage (V) On-Resistance vs. Drain Current ID-Drain Current (A) Gate Charge Qg-Total Gate Charge (nC) Transfer Characteristics VGS-Gate-to-Source Voltage (V) Capacitance VDS-Drain-to-Source Voltage (V) On-Resistance vs. Junction Temperature TJ-Junction Temperature (℃) VER 1.3 4 ACE4922 Dual N-Channel Enhancement Mode MOSFET Typical Performance Characteristics Source-Drain Diode Forward Voltage VSD-Source-to-Drain Voltage (V) Threshold Voltage On-Resistance vs. Gate-to-Source Voltage V GS-Gate-to-Source Voltage (V) Single Pulse Power, Junction-to-Ambient TJ-Temperature(℃) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Foot Square Wave Pulse Duration (sec) VER 1.3 5 ACE4922 Dual N-Channel Enhancement Mode MOSFET Packing Information SC-70-6 VER 1.3 6 ACE4922 Dual N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 7