ACE7401 P-Channel Enhancement Mode MOSFET Description The ACE7401 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other batter powered circuits, and low in-line power loss are needed in a very small outline surface mount package. Features -30V/-2.8A, RDS(ON)=115mΩ@VGS=-10V -30V/-2.5A, RDS(ON)=125mΩ@VGS=-4.5V -30V/-1.5A, RDS(ON)=170mΩ@VGS=-2.5V -30V/-1.0A, RDS(ON)=240mΩ@VGS=-1.8V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Application Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS -30 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (TJ=150℃) TA=25℃ TA=70℃ ID -2.8 A -2.1 Pulsed Drain Current IDM -8 A Continuous Source Current (Diode Conduction) IS -1.4 A Power Dissipation TA=25℃ TA=70℃ Operating Junction Temperature Storage Temperature Range Thermal Resistance-Junction to Ambient PD TJ TSTG RθJA 0.33 W 0.21 -55/150 O C -55/150 O C 105 O C/W VER 1.3 1 ACE7401 P-Channel Enhancement Mode MOSFET Packaging Type SOT-323 3 SOT-323 Description 1 1 Gate 2 Source 3 Drain 2 Ordering information ACE7401 XX + H Halogen - free Pb - free CM : SOT-323 Electrical Characteristics TA=25℃, unless otherwise noted Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V(BR)DSS VGS=0V, ID=-250uA -30 VGS(th) VDS=VGS, ID=-250uA -0.4 Gate Leakage Current IGSS VDS=0V,VGS=±12V ±100 Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1 VDS=-24V, VGS=0V TJ=85℃ -5 On-State Drain Current ID(ON) Drain-Source On-Resistance RDS(ON) VDS=-5V, VGS=-4.5V V -1.0 -4 nA uA A VGS=-10V, ID=-2.8A 0.105 0.115 VGS=-4.5V, ID=-2.5A 0.125 0.135 VGS=-2.5V, ID=-1.5A 0.155 0.170 VGS=-1.8V, ID=-1.0A 0.210 0.240 Forward Transconductance Gfs VDS=-10V,ID=-2.8A 4 Diode Forward Voltage VSD IS=-1.2A, VGS=0V -0.8 Ω S -1.2 V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs VDS=-15V, VGS=-4.5V, ID=-2.0A 5.8 nC 0.8 VER 1.3 2 ACE7401 P-Channel Enhancement Mode MOSFET Gate-Drain Charge Qgd 1.5 Input Capacitance Ciss 380 Output Capacitance Reverse Transfer Capacitance Coss Turn-On Time Turn-Off Time VDS=-15V, VGS=0V, f=1MHz 55 Crss 40 td(on) 6 tr td(off) VDD=-15V, RL=15Ω, ID=-1.0A, VGEN=-10V, RG=3Ω tf pF 3.9 nS 40 15 Typical Performance Characteristics Output Characteristics Transfer Characteristics VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance ID-Drain Current (A) V DS-Drain-to-Source Voltage (V) VER 1.3 3 ACE7401 P-Channel Enhancement Mode MOSFET Gate Charge On-Resistance vs. Junction Temperature Qg-Total Gate Charge (nC) TJ-Junction Temperature (℃) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD-Source-to-Drain Voltage (V) Threshold Voltage TJ-Temperature(℃) VGS-Gate-to-Source Voltage (V) Single Pulse Power Time (sec) VER 1.3 4 ACE7401 P-Channel Enhancement Mode MOSFET Normalized Thermal Transient Impedance, Junction-to Foot VER 1.3 5 ACE7401 P-Channel Enhancement Mode MOSFET Packing Information SOT-323 VER 1.3 6 ACE7401 P-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.3 7