ACE1551A N-Channel Enhancement Mode MOSFET Description The ACE1551A is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed. Features N-Channel 20V/0.95A,RDS(ON)=380mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=450mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=800mΩ@VGS=1.8V 20V/0.65A,RDS(ON)=1000mΩ@VGS=1.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability Applications Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter Absolute Maximum Ratings Parameter Symbol Max Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V ID 0.65 A Pulsed Drain Current IDM 4 A Continuous Source Current (Diode Conduction) IS 0.3 A PD 0.15 Continuous Drain Current (TJ=150℃) Power Dissipation TA=25℃ TA=25℃ Operating Junction Temperature / Storage Temperature Range TJ/TSTG -55/150 W O C VER 1.2 1 ACE1551A N-Channel Enhancement Mode MOSFET Packaging Type SOT-723 D D G G S S Ordering information ACE1551A XX + H Halogen - free Pb - free JM : SOT-723 Electrical Characteristics TA=25℃, unless otherwise specified. Parameter Symbol Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250 uA 20 Gate Threshold Voltage VGS(th) VDS=VGS, IDS=250uA 0.35 Gate Leakage Current IGSS VDS=0V,VGS=±12V 30 Zero Gate Voltage Drain Current IDSS VDS=20V, VGS=0V 1 VDS=20V, VGS=0V, TJ=55℃ 5 On-State Drain Current ID(on) Drain-Source On-Resistance RDS(ON) VDS≥ 4.5V,VGS =5V V 1.0 0.7 uA uA A VGS=4.5V, ID=0.95A 0.26 0.38 VGS=2.5V, ID=0.75A 0.32 0.45 VGS=1.8V, ID=0.65A 0.42 0.8 VGS=1.5V, ID=0.65A 0.5 1.0 Forward Transconductance gfs VDS=10V,ID=0.4A 1.0 Diode Forward Voltage VSD ISD=0.15A, VGS=0V 0.8 1.2 1.2 1.5 Ω S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs VDS=10V, VGS=4.5V, ID=0.6A 0.2 VER 1.2 nC 2 ACE1551A N-Channel Enhancement Mode MOSFET Gate-Drain Charge Turn-On Time Turn-Off Time Qgd 0.3 td(on) 5 10 8 15 10 18 1.2 2.8 tr td(off) tf VGEN=4.5V, ID=0.5A, VDD=10V, RG=6Ω, RL=10Ω nS Typical Performance Characteristics VER 1.2 3 ACE1551A N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 4 ACE1551A N-Channel Enhancement Mode MOSFET Typical Performance Characteristics VER 1.2 5 ACE1551A N-Channel Enhancement Mode MOSFET Packing Information SOT-723 VER 1.2 6 ACE1551A N-Channel Enhancement Mode MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.2 7