DIM1000ECM33

DIM1000ECM33-TL000
IGBT Chopper Module
Replaces DS6105-1
DS6105-2 March 2014 (LN31424)
FEATURES
KEY PARAMETERS

Low VCE(sat) Device

10µs Short Circuit Withstand

High Thermal Cycling Capability
VCES
VCE(sat) * (typ)
IC
(max)
IC(PK)
(max)

High Current Density Enhanced DMOS SPT

Isolated AlSiC Base with AlN Substrates
* Measured at the auxiliary terminals
APPLICATIONS

High Reliability Inverters

Motor Controllers

Traction Drives

Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1000ECM33-TL000 is a Low VCE(sat) 3300V,
soft punch through n-channel enhancement mode,
insulated gate bipolar transistor (IGBT) chopper
module. The IGBT has a wide reverse bias safe
operating area (RBSOA) plus 10μs short circuit
withstand. This device is optimised for traction drives
and other applications requiring high thermal cycling
capability.
3300V
2.0V
1000A
2000A
9(C)
7(C)
5(A)
8(E)
6(E)
4(K)
3(C)
2(G)
1(E)
Fig. 1 Circuit configuration
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
ORDERING INFORMATION
Order As:
DIM1000ECM33-TL000
Outline type code: E
Note: When ordering, please use the complete part
number
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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1 /8
DIM1000ECM33-TL000
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under ‘Absolute Maximum Ratings’ may cause permanent damage to the device. In
extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package.
Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect
device reliability.
Tcase = 25°C unless stated otherwise
Symbol
Parameter
VCES
Collector-emitter voltage
VGES
Gate-emitter voltage
IC
Test Conditions
VGE = 0V
Max.
Units
3300
V
±20
V
Continuous collector current
Tcase = 115°C
1000
A
IC(PK)
Peak collector current
1ms, Tcase = 140°C
2000
A
Pmax
Max. transistor power dissipation
Tcase = 25°C, Tj = 150°C
10.4
kW
320
kA s
320
kA s
6000
V
10
pC
2
2
It
Diode I t value (IGBT arm)
VR = 0, tp = 10ms, Tj = 125ºC
2
Diode I t value (Diode arm)
Visol
Isolation voltage – per module
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
QPD
Partial discharge – per module
IEC1287, V1 = 3500V, V2 = 2600V, 50Hz RMS
2
2
THERMAL AND MECHANICAL RATINGS
Internal insulation material:
AlN
Baseplate material:
AlSiC
Creepage distance:
31mm
Clearance:
20mm
CTI (Comparative Tracking Index):
>600
Symbol
Parameter
Test Conditions
Rth(j-c)
Thermal resistance – transistor
Rth(j-c)
Thermal resistance – diode (IGBT arm)
Rth(j-c)
Thermal resistance – diode (Diode arm)
Rth(c-h)
Thermal resistance – case to heatsink
(per module)
Tj
Tstg
Junction temperature
Storage temperature range
Screw torque
2/8
Min
Typ.
Max
Units
-
-
12
°C/kW
-
-
24
°C/kW
-
-
24
°C/kW
-
-
6
°C/kW
Transistor
-
-
150
°C
Diode
-
-
150
°C
-40
-
125
°C
Mounting – M6
-
-
5
Nm
Electrical connections – M4
-
-
2
Nm
Electrical connections – M8
-
-
10
Nm
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Continuous dissipation –
junction to case
Mounting torque 5Nm
(with mounting grease)
-
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000ECM33-TL000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise.
Symbol
ICES
Collector cut-off current
IGES
VGE(TH)
VCE(sat)
Parameter
†
Test Conditions
Min
Typ
Max
Units
VGE = 0V, VCE = VCES
4
mA
VGE = 0V, VCE = VCES, Tcase = 125°C
60
mA
VGE = 0V, VCE = VCES, Tcase = 150°C
100
mA
1
μA
Gate leakage current
VGE = ± 20V, VCE = 0V
Gate threshold voltage
IC = 80mA, VGE = VCE
5.7
V
VGE = 15V, IC = 1000A
2.0
V
VGE = 15V, IC = 1000A, Tj = 125°C
2.6
V
VGE = 15V, IC = 1000A, Tj = 150°C
2.8
V
Collector-emitter saturation
voltage
IF
Diode forward current
DC
1000
A
IFM
Diode maximum forward current
tp = 1ms
2000
A
IF = 1000A
2.4
V
IF = 1000A, Tj = 125°C
2.5
V
IF = 1000A, Tj = 150°C
2.4
V
VF
†
Diode forward voltage
(IGBT & Diode arm)
Cies
Input capacitance
VCE = 25V, VGE = 0V, f = 1MHz
170
nF
Qg
Gate charge
±15V Including external Cge
17
μC
Cres
Reverse transfer capacitance
VCE = 25V, VGE = 0V, f = 1MHz
4
nF
IGBT
15
nH
LM
Module inductance
Diode
25
IGBT
135
Diode
270
μ
3700
A
RINT
Internal resistance
Tj = 150°C, VCC = 2500V
SCData
Short circuit current, ISC
tp ≤ 10μs, VGE ≤ 15V
*
VCE (max) = VCES – L x dI/dt
IEC 60747-9
Note:
†
Measured at the auxiliary terminals
*
L is the circuit inductance + LM
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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3 /8
DIM1000ECM33-TL000
ELECTRICAL CHARACTERISTICS
Tcase = 25°C unless stated otherwise
Symbol
Parameter
Test Conditions
td(off)
tf
Turn-off delay time
Fall time
EOFF
td(on)
tr
EON
Qrr
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Irr
Erec
Min
Typ.
Max
Units
2700
610
ns
ns
IF = 1000A
2500
960
430
1600
570
mJ
ns
ns
mJ
μC
Diode reverse recovery current
VCE = 1800V
620
A
Diode reverse recovery energy
dIF/dt = 2700A/μs
670
mJ
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Tcase = 125°C unless stated otherwise
Symbol
Parameter
Test Conditions
td(off)
Turn-off delay time
tf
EOFF
td(on)
tr
EON
Qrr
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Irr
Diode reverse recovery current
Erec
Diode reverse recovery energy
Min
Typ.
Max
Units
2750
ns
IF = 1000A
590
2700
1000
460
2050
930
ns
mJ
ns
ns
mJ
μC
VCE = 1800V
775
A
dIF/dt = 2700A/μs
1150
mJ
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
Tcase = 150°C unless stated otherwise
Symbol
td(off)
tf
EOFF
td(on)
tr
EON
Parameter
Test Conditions
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Min
Typ.
Max
Units
IC = 1000A
VGE = ±15V
VCE = 1800V
RG(ON) = 2.7
RG(OFF) = 2.2
Cge = 220nF
LS ~ 100nH
2760
590
2950
940
460
2250
ns
ns
mJ
ns
ns
mJ
Qrr
Diode reverse recovery charge
IF = 1000A
1070
μC
Irr
Diode reverse recovery current
VCE = 1800V
800
A
Erec
Diode reverse recovery energy
dIF/dt = 2700A/μs
1300
mJ
4/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000ECM33-TL000
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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5 /8
DIM1000ECM33-TL000
6/8
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Transient thermal impedance
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM1000ECM33-TL000
PACKAGE DETAILS
For further package information, please visit our website or contact Customer Services.
All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
190 ±0.5
171 ±0.15
57 ±0.1
6 x M8
screwing depth
max. 16
5.2 ±0.2
40 ±0.2
140 ±0.5
124 ±0.1
40 ±0.2
20 ±0.1
7
20.25 ±0.2
8 x Ø7
28 ±0.5
screwing depth
max. 8
41.25 ±0.2
3 x M4
79.4 ±0.2
61.5 ±0.3
61.5 ±0.3
5 ±0.2
38 ±0.5
13 ±0.2
Nominal Weight:
1400g
Module Outline Type Code:
E
Fig. 11 Module outline drawing
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
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7 /8
DIM1000ECM33-TL000
IMPORTANT INFORMATION:
This publication is provided for information only and not for resale.
The products and information in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot
constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and
the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety
and any warning requirements are met. Should additional product information be needed please contact Customer Service.
Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or
typographical errors. The information is provided without any warranty or guarantee of any kind.
This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it
is the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to
property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a
product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use
protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any
electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves.
Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all
semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or
explosion. Appropriate application design and safety precautions should always be followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for
production. The annotations are as follows:Target Information:
This is the most tentative form of information and represents a very preliminary specification.
No actual design work on the product has been started.
Preliminary Information:
The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
No Annotation:
The product has been approved for production and unless otherwise notified by Dynex any
product ordered will be supplied to the current version of the data sheet prevailing at the
time of our order acknowledgement.
All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available
on request.
Any brand names and product names used in this publication are trademarks, registered trademarks or trade
names of their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500550
Tel:
+44(0)1522 500500
Web:
http://www.dynexsemi.com
DYNEX SEMICONDUCTOR LTD
Doddington Road, Lincoln, Lincolnshire, LN6 3LF,
United Kingdom
Fax:
+44(0)1522 500020
Tel:
+44(0)1522 502753 / 502901
Email: [email protected]
 Dynex Semiconductor Ltd. 2013
Technical Documentation – Not for resale.
8/8
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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