NE68719

NPN SILICON RF TRANSISTOR
NE68719
D
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR LOW-NOISE MICROWAVE AMPLIFICATION
3-PIN ULTRA SUPER MINIMOLD
FEATURES
UE
• Low noise
NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz
NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
• 3-pin ultra super minimold package
ORDERING INFORMATION
NE68719-A
NE68719-T1-A
Quantity
Supplying Form
O
NT
IN
Part Number
50 pcs (Non reel)
• 8 mm wide embossed taping
3 kpcs/reel
• Pin 3 (collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (T A = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
5
V
Collector to Emitter Voltage
VCEO
3
V
Emitter to Base Voltage
VEBO
2
V
IC
30
mA
90
mW
150
C
65 to +150
C
Collector Current
Total Power Dissipation
Tj
SC
Junction Temperature
Ptot
Note
Storage Temperature
Tstg
DI
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10213EJ01V0DS (1st edition)
(Previous No. P12110EJ2V0DS00)
Date Published January 2003 CP(K)
The mark  shows major revised points.
NE68719
ELECTRICAL CHARACTERISTICS (T A = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
ICBO
VCB = 5 V, IE = 0 mA
–
–
100
nA
Emitter Cut-off Current
IEBO
–
100
nA
–
140
–
11
–
GHz
VEB = 1 V, IC = 0 mA
–
Note 1
VCE = 2 V, IC = 20 mA
70
Gain Bandwidth Product (1)
fT
VCE = 2 V, IC = 20 mA, f = 2 GHz
9
Gain Bandwidth Product (2)
fT
DC Current Gain
hFE
Insertion Power Gain (1)
S21e
2
Insertion Power Gain (2)
S21e
2
UE
RF Characteristics
D
Collector Cut-off Current
VCE = 1 V, IC = 10 mA, f = 2 GHz
7
9
–
GHz
VCE = 2 V, IC = 20 mA, f = 2 GHz
8.5
10
–
dB
VCE = 1 V, IC = 10 mA, f = 2 GHz
6.0
7.5
–
dB
Noise Figure (1)
NF
VCE = 2 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
Noise Figure (2)
NF
VCE = 1 V, IC = 3 mA, f = 2 GHz
–
1.3
2.0
dB
VCB = 2 V, IE = 0 mA, f = 1 MHz
–
0.4
0.8
pF
Cre
O
NT
IN
Reverse Transfer Capacitance
Note 2
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank
Marking
86
70 to 140
DI
SC
hFE Value
FB
2
Data Sheet PU10213EJ01V0DS
NE68719
DI
SC
O
NT
IN
UE
D
TYPICAL CHARACTERISTICS (T A = +25C, unless otherwise specified)
Data Sheet PU10213EJ01V0DS
3
DI
SC
S-PARAMETERS
O
NT
IN
Remark The graphs indicate nominal characteristics.
UE
D
NE68719
4
Data Sheet PU10213EJ01V0DS
NE68719
PACKAGE DIMENSIONS
DI
SC
O
NT
IN
UE
D
3-PIN ULTRA SUPER MINIMOLD (UNIT: mm)
Data Sheet PU10213EJ01V0DS
5