DATA SHEET NPN SILICON RF TRANSISTOR 2SC5186 NPN EPITAXIAL SILICON RF TRANSISTOR FOR LOW-NOISE MICROWAVE AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • Low noise NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • 3-pin ultra super minimold package ORDERING INFORMATION Part Number Quantity Supplying Form 2SC5186 50 pcs (Non reel) • 8 mm wide embossed taping 2SC5186-T1 3 kpcs/reel • Pin 3 (collector) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25°°C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 5 V Collector to Emitter Voltage VCEO 3 V Emitter to Base Voltage VEBO 2 V IC 30 mA 90 mW Collector Current Total Power Dissipation Ptot Note Junction Temperature Tj 150 °C Storage Temperature Tstg −65 to +150 °C Note Free air Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices representative for availability and additional information. Document No. PU10213EJ01V0DS (1st edition) (Previous No. P12110EJ2V0DS00) Date Published January 2003 CP(K) Printed in Japan The mark • shows major revised points. NEC Compound Semiconductor Devices 1994, 2003 2SC5186 ELECTRICAL CHARACTERISTICS (TA = +25°°C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA – – 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA – – 100 nA VCE = 2 V, IC = 20 mA 70 – 140 – VCE = 2 V, IC = 20 mA, f = 2 GHz 9 11 – GHz VCE = 1 V, IC = 10 mA, f = 2 GHz 7 9 – GHz Note 1 hFE DC Current Gain RF Characteristics Gain Bandwidth Product (1) fT Gain Bandwidth Product (2) fT Insertion Power Gain (1) S21e VCE = 2 V, IC = 20 mA, f = 2 GHz 8.5 10 – dB Insertion Power Gain (2) S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz 6.0 7.5 – dB Noise Figure (1) NF VCE = 2 V, IC = 3 mA, f = 2 GHz – 1.3 2.0 dB Noise Figure (2) NF VCE = 1 V, IC = 3 mA, f = 2 GHz – 1.3 2.0 dB VCB = 2 V, IE = 0 mA, f = 1 MHz – 0.4 0.8 pF 2 Reverse Transfer Capacitance Note 2 Cre Notes 1. Pulse measurement: PW ≤ 350 µs, Duty Cycle ≤ 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION 2 Rank FB Marking 86 hFE Value 70 to 140 Data Sheet PU10213EJ01V0DS 2SC5186 TYPICAL CHARACTERISTICS (TA = +25°°C, unless otherwise specified) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE REVERSE TRANSFER CAPACITANCE vs. COLLECTOR TO BASE VOLTAGE Reverse Transfer Capacitance Cre (pF) Total Power Dissipation Ptot (mW) 250 Free Air 200 150 100 90 50 0 25 50 75 100 125 150 0.8 f = 1 MHz 0.6 0.4 0.2 0 2 4 6 8 10 Ambient Temperature TA (˚C) Collector to Base Voltage VCB (V) COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 25 50 40 Collector Current IC (mA) Collector Current IC (mA) VCE = 2 V 30 20 10 20 200 µ A 180 µ A 160 µ A 140 µ A 120 µ A 100 µ A 80 µ A 60 µ A 40 µ A 15 10 5 IB = 20 µ A 0 0.5 1.0 0 1 3 2 4 Base to Emitter Voltage VBE (V) Collector to Emitter Voltage VCE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 200 VCE = 2 V 100 50 1V 20 Gain Bandwidth Product fT (GHz) DC Current Gain hFE 500 f = 2 GHz 15 VCE = 2 V 1V 10 5 10 1 2 5 10 20 50 100 0.7 Collector Current IC (mA) 1 2 3 5 7 10 20 30 Collector Current IC (mA) Data Sheet PU10213EJ01V0DS 3 2SC5186 INSERTION POWER GAIN vs. COLLECTOR CURRENT NOISE FIGURE vs. COLLECTOR CURRENT f = 2 GHz VCE = 2 V 10 Noise Figure NF (dB) Insertion Power Gain |S21e|2 (dB) 3 f = 2 GHz 1V 5 2 VCE = 1 V 2V 1 0 0.7 1 2 3 5 7 10 20 30 0.5 1 2 3 5 7 10 20 30 Collector Current IC (mA) Collector Current IC (mA) Remark The graphs indicate nominal characteristics. S-PARAMETERS S-parameters/Noise parameters are provided on the NEC Compound Semiconductor Devices Web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.csd-nec.com/ 4 Data Sheet PU10213EJ01V0DS 2SC5186 PACKAGE DIMENSIONS 3-PIN ULTRA SUPER MINIMOLD (UNIT: mm) 1.6±0.1 0.8±0.1 0.3+0.1 –0 0.2+0.1 –0 0.5 0.5 1.0 86 3 0.15+0.1 –0.05 0 to 0.1 0.6 1 0.75±0.05 1.6±0.1 2 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector Data Sheet PU10213EJ01V0DS 5 2SC5186 • The information in this document is current as of January, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. 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M8E 00. 4 - 0110 6 Data Sheet PU10213EJ01V0DS 2SC5186 Business issue NEC Compound Semiconductor Devices, Ltd. 5th Sales Group, Sales Division TEL: +81-3-3798-6372 FAX: +81-3-3798-6783 E-mail: [email protected] NEC Compound Semiconductor Devices Hong Kong Limited Hong Kong Head Office FAX: +852-3107-7309 TEL: +852-3107-7303 Taipei Branch Office TEL: +886-2-8712-0478 FAX: +886-2-2545-3859 Korea Branch Office FAX: +82-2-528-0302 TEL: +82-2-528-0301 NEC Electronics (Europe) GmbH http://www.ee.nec.de/ TEL: +49-211-6503-01 FAX: +49-211-6503-487 California Eastern Laboratories, Inc. http://www.cel.com/ TEL: +1-408-988-3500 FAX: +1-408-988-0279 Technical issue NEC Compound Semiconductor Devices, Ltd. http://www.csd-nec.com/ Sales Engineering Group, Sales Division E-mail: [email protected] FAX: +81-44-435-1918 0209