NR4211TH

A Business Partner of Renesas Electronics Corporation.
Preliminary
NR4211TH
RECEIVER (Limiting TIA, with DCA function)
InAlAs APD RECEIVER WITH INTERNAL PRE-AMPLIFIER FOR 10 Gb/s APPLICATIONS
Data Sheet
R08DS0022EJ0100
Rev.1.00
Sep 13, 2012
DESCRIPTION
The NR4211TH product consists of InAIAs-APD (avalanche photo diode)
ROSAs (Receiver Optical Sub-Assembly) with internal pre-amplifiers
designed for 10 Gb/s long-reach optical transceivers such as the
XENPAK/X2/XFP and Transponder. These modules are ideal as receivers
for IEEE 10G BASE and SONET OC-192 systems and D-WDM systems.
FEATURES
•
•
•
•
•
•
•
•
•
XMD-MSA compliant ROSA
10 Gb/s high sensitivity InAlAs-APD
+3.3 V transimpedance pre-amplifier
Minimum receiver sensitivity
Pr = −27.5 dBm
Operating case temperature
TC = −5 to +90°C
Transimpedance
Zt = 6 000 Ω (Single-ended)
Cut-off frequency
fC = 7.5 GHz
With DCA function (Cross point control)
With flexible printed circuit
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
Page 1 of 6
A Business Partner of Renesas Electronics Corporation.
NR4211TH
Chapter Title
PACKAGE DIMENSIONS (UNIT: mm)
φ 5.0±0.1
φ 2.99±0.01
φ2.92±0.01
1.35
5.15±0.05
0.55±0.03
4.05
OPTICAL
REFERENCE
PLANE
φ 3.5±0.05
1.3
φ 3.5±0.05
φ 5.5±0.05
φ 5.6 MAX.
5.0±0.2
12.45±0.2
2– φ 0.7
0.27
Vapd
1.3
Vapd
VCC
GND
1.0
NC
2.1
17.45±0.2
DCA
GND
DATA_N
DATA_P
GND
VCC
6–0.35
0.1 μ F
5.6
470 pF
BOTTOM VIEW
5–0.79
1.0 MAX.
14.0±0.3
8.7 +0.1
–0.15
OFF-SET (0.2)
Remark Tolerance is ±0.1 unless otherwise specified.
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
Page 2 of 6
A Business Partner of Renesas Electronics Corporation.
NR4211TH
Chapter Title
BLOCK DIAGRAM
Flexible Printed Circuit
1 200 Ω
Vpd
100 pF
470 pF
GND
APD
GND
DATA_P
GND
TIA
DATA_N
VCC
200 Ω
10 nF
0.1μF
DCA
100 pF
100 pF
GND
GND
GND
GND
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
10 nF
GND
Page 3 of 6
A Business Partner of Renesas Electronics Corporation.
NR4211TH
Chapter Title
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)
Parameter
APD Reverse Voltage
APD Reverse Current
Maximum Optical Input Power
Maximum Optical Input Power
(with 7.5 kΩ serial resistance)
IC Supply Voltage
DCA Voltage
Operating Case Temperature
Storage Temperature
Lead Soldering Temperature
(Flexible Printed Circuit)
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
Symbol
VR
IR (peak)
Pin (peak)
VCC
VDCA
TC
Tstg
Tsld
Ratings
VBR
4
3
7
Unit
V
mA
dBm
−0.5 to +3.7
0 to +4 and < VCC+0.5
−5 to +90
−40 to +90
260 (10 sec.)
V
V
°C
°C
°C
Page 4 of 6
A Business Partner of Renesas Electronics Corporation.
NR4211TH
Chapter Title
ELECTRO-OPTICAL CHARACTERISTICS
(TC = −5 to +90°C, VCC = +3.13 to +3.47 V, λ = 1 550 nm, unless otherwise specified)
Parameter
APD Sensitivity
Symbol
S
APD Breakdown Voltage
VBR
Temperature Coefficient of
APD Breakdown Voltage
APD Dark Current
IC Supply Current
DCA input Voltage
DCA current
Transimpedance
δ
*1
ID
ICC
VDCA
IDCA
Zt
Maximum Output Voltage
Swing
Cut-off Frequency
RF Output Return Loss
Minimum Receiver Sensitivity
Vclip
Overload
PO
Optical Return Loss
Note: *1. δ =
Conditions
λ = 1 310 nm, M = 1
λ = 1 550 nm, M = 1
ID = 10 μA
fC
S22
Pr
ORL
MIN.
0.75
0.75
TYP.
0.9
0.9
0
0.02
VR = VBR × 0.9, TC = 25°C
Single-ended
Single-ended
M = 9, Pin = −27 dBm
1G−6G, M = 9, Single-ended
2.5
−30
3 000
6 000
6
7.5
−27.5
9.95 Gb/s,
BER = 10−12, Mopt,
31
PRBS = 2 −1, ER = 13 dB, NRZ
9.95 Gb/s,
BER = 10−12, Mopt,
31
PRBS = 2 −1, ER = 13 dB, NRZ
λ = 1 310 nm
λ = 1 550 nm
MAX.
Unit
A/W
36
0.05
V
V/°C
0.7
50
3.5
30
10 000
350
μA
mA
V
μA
Ω
mVPP
−5
−26.0
GHz
dB
dBm
−6.5
dBm
−27
−27
dB
ΔVBR
ΔTC
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
Page 5 of 6
A Business Partner of Renesas Electronics Corporation.
NR4211TH
Chapter Title
SAFETY INFORMATION ON THIS PRODUCT
Caution
GaAs Products
This product uses gallium arsenide (GaAs).
GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe
the following points.
• Follow related laws and ordinances when disposing of the product. If there are no applicable laws
and/or ordinances, dispose of the product as recommended below.
1. Commission a disposal company able to (with a license to) collect, transport and dispose of
materials that contain arsenic and other such industrial waste materials.
2. Exclude the product from general industrial waste and household garbage, and ensure that the
product is controlled (as industrial waste subject to special control) up until final disposal.
• Do not burn, destroy, cut, crush, or chemically dissolve the product.
• Do not lick the product or in any way allow it to enter the mouth.
R08DS0022EJ0100 Rev.1.00
Sep 13, 2012
Page 6 of 6
Revision History
NR4211TH Data Sheet
Rev.
Date
Page
1.00
Sep 13, 2012
−
Description
Summary
First edition issued
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