A Business Partner of Renesas Electronics Corporation. NX6350EP Series Preliminary LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION Data Sheet R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 DESCRIPTION The NX6350EP series is a 1 270/1 290/1 310/1 330 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD. APPLICATIONS • • 40GBASE-LR4 Bi-Directional 10G SFP+ (CPRI,10G-Ethernet) FEATURES • • • • • • • Optical output power Low threshold current Differential efficiency Wide operating temperature range InGaAs monitor PIN-PD CAN package Focal point R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 PO = 8.5 mW Ith = 8 mA η d = 0.35 W/A TC = −5 to +85°C φ 5.6 mm 6.2 mm Page 1 of 5 A Business Partner of Renesas Electronics Corporation. NX6350EP Series Chapter Title PACKAGE DIMENSIONS (UNIT: mm) (φ 5.6) *2 (φ 4.2) *2 *2 1.0±0.1 BOTTOM VIEW 1 110°±2° (0.3) *2 (φ 3.55) (0.3) 4 2 *2 3 *1 6.20±0.4 1 (3.0) *2 PIN CONNECTIONS LD 4 2 1.2±0.1 3.87±0.3 φ 2.0 Focal Point Δ x = ±200 μ m MAX. Δ y = ±200 μ m MAX. 15.0±1.0 Reference Plane 3 PD 4– φ 0.45 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 Page 2 of 5 A Business Partner of Renesas Electronics Corporation. NX6350EP Series Chapter Title ORDERING INFORMATION Part Number NX6350EPxx∗1$= Package 4-pin CAN with ball lens cap Pin Connections 1 2 LD 4 3 PD Note: ∗1. The last two digits (“xx”) of Part Number indicates Wavelength Code. The relationships between the code and wavelength are as follows. WAVELENGTH CODE 27 29 31 33 WAVELENGTH (nm) 1 270 1 290 1 310 1 330 Remarks 1. The color of lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 Page 3 of 5 A Business Partner of Renesas Electronics Corporation. NX6350EP Series Chapter Title ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) Parameter Optical Output Power Forward Current of LD Reverse Voltage of LD Forward Current of PD Reverse Voltage of PD Operating Case Temperature Storage Temperature Lead Soldering Temperature Relative Humidity (noncondensing) Symbol PO IF VR IF VR TC Tstg Tsld RH Ratings 15 120 2.0 10.0 15 −5 to +85 −40 to +95 350 (3 sec.) 85 Unit mW mA V mA V °C °C °C % RECOMMENDED LD DRIVE CURRENT AT MODULE LEVEL Parameter Bias Current Symbol Ibias Conditions TC = 25°C MIN. − TYP. 30 MAX. − Unit mA PO = 8.5 mW, TC = 25°C PO = 8.5 mW PO = 8.5 mW NX6350EP27 MIN. − − − − − 0.28 0.16 1 264.5 TYP. 10.3125 8.5 − 8 − 0.35 − − MAX. − − 1.8 15 30 − − 1 277.5 NX6350EP29 1 284.5 − 1 297.5 NX6350EP31 1 304.5 − 1 317.5 NX6350EP33 1 324.5 − 1 337.5 PO = 8.5 mW 20-80% *1 80-20% *1 35 − − − − − − 50 50 dB ps ps VR = 1.5 V, PO = 8.5 mW VR = 3.3 V, TC = 25°C VR = 3.3 V VR = 3.3 V, f = 1 MHz 100 − − − − − − − 1 000 10 100 20 μA Im = const. (@PO = 8.5 mW, TC = 25°C) −0.9 − 0.9 dB ELECTRO-OPTICAL CHARACTERISTICS (TC = −5 to +85°C, CW, BOL, unless otherwise specified) Parameter Signaling Rate Optical Output Power Operating Voltage Threshold Current Symbol Differential Efficiency ηd Peak Emission Wavelength λp PO Vop Ith Side Mode Suppression Ratio Rise Time Fall Time SMSR tr tf Monitor Current Monitor Dark Current Im ID Monitor PD Terminal Capacitance Tracking Error *2 Ct γ Conditions PO = 8.5 mW TC = 25°C Unit Gb/s mW V mA W/A nm nA pF Notes: 1. 10.3125 Gb/s, PRBS 231 − 1, NRZ, Duty Cycle = 50% 2. Tracking Error: γ Po γ = 10 log (mW) Po 8.5 [dB] TC = 25°C 8.5 TC = –5 to +85°C Po 0 R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 Im Im (mA) Page 4 of 5 A Business Partner of Renesas Electronics Corporation. NX6350EP Series Chapter Title SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. R08DS0066EJ0100 Rev.1.00 Aug 14, 2012 Page 5 of 5 Revision History NX6350EP Series Data Sheet Rev. Date Page 1.00 Aug 14, 2012 − Description Summary First edition issued C-1