A Product Line of Diodes Incorporated ZUMTS17N NPN RF TRANSISTOR IN SOT323 Features Mechanical Data • • • • • • • • • 3.2GHz unity gain for RF switching applications Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Applications • • Case: SOT323 Case Material: molded plastic, "Green" molding compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) RF Switch SOT323 C E C B B E Top View Device symbol Top View Pin Out Ordering Information (Note 4) Part Number ZUMTS17NTA Notes: Marking T4H Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen and Antimony free, "Green" and Lead-Free. 3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information T4H ZUMTS17N Document number: DS32159 Rev. 2 - 2 T4H = Product Type Marking Code 1 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Symbol VCBO VCEO VEBO IC Value 20 11 3 50 Unit V V V mA Value 310 350 403 357 350 -55 to +150 Unit Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Leads Operating and Storage Temperature Range Symbol (Note 5) (Note 6) (Note 5) (Note 6) (Note 7) PD RθJA RθJL TJ,TSTG mW °C/W °C/W °C ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Notes: Symbol ESD HBM ESD MM Value 2,000 100 Unit V V JEDEC Class 2 A 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper in still air condition; 6. Same as Note 6, expect the device is mounted on 15mm X 15mm X 1.6mm FR4 PCB 7. Thermal resistance from junction to solder-point (at the end of the leads). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. ZUMTS17N Document number: DS32159 Rev. 2 - 2 2 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N Thermal Characteristics and Derating information 400 Thermal Resistance (°C/W) Max Power Dissipation (W) 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 150 Temperature (°C) 350 300 250 200 D=0.5 150 100 D=0.1 Single Pulse D=0.2 50 0 100µ D=0.05 1m 10m 100m 1 10 100 1k Pulse Width (s) Transient Thermal Impedance Derating Curve Max Power Dissipation (W) 10 Single Pulse. T amb=25°C 1 0.1 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZUMTS17N Document number: DS32159 Rev. 2 - 2 3 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Static Forward Current Transfer Ratio (Note 9) Collector-Emitter Saturation Voltage (Note 9) Transition Frequency (Note 9) Collector Output Capacitance (Note 9) Notes: Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(SAT) Min 20 11 3 ⎯ ⎯ 56 ⎯ Typ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ Max ⎯ ⎯ ⎯ 0.5 0.5 180 0.5 Unit V V V μA μA ⎯ V fT 1.4 3.2 ⎯ GHz Cob ⎯ 0.8 1.5 pF Test Condition IC = 10μA IC = 1mA IE = 10μA VCE = 10V VEB = 2V IC = 5mA, VCE = 10V IC = 10mA, IB = 5mA VCE = 5V, IE = 25mA, f = 500MHz VCB = 10V, f = 1.0MHz 9. Measured under pulsed conditions. Pulse width ≤ 300 µs. Duty cycle ≤ 2% ZUMTS17N Document number: DS32159 Rev. 2 - 2 4 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 200 hFE Gain 150 IC Collector Current (A) VCE=5V T=150°C T=85°C 100 T=25°C 50 T=-55°C 0 0.1 1 10 IC Collector Current (mA) 100 T=-55°C T=25°C CEB Capacitance (pF) VBE(ON) (V) 0.05 0.04 0.03 0.02 0.01 0.00 0 1 2 3 4 5 6 7 8 9 10 1.6 1000 800 700 600 T=85°C 500 400 0.1 Ten base steps 100μA per step VCE (V) 1100 900 0.06 T=150°C 1 VCE=5V 10 IC Collector Current (mA) 100 Ta=25°C f=1MHz 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VEB Emitter-Base Voltage (V) 4 fT (GHz) 3 2 CCB Capacitance (pF) VCE=10V VCE=5V 1 Tamb=25°C f=500MHz 0 0.0 5.0 10.0 VCE=1V 15.0 20.0 VCE=2V 25.0 30.0 1.4 Ta=25°C f=1MHz 1.2 1.0 0.8 0.6 0 IC Collector Current (mA) ZUMTS17N Document number: DS32159 Rev. 2 - 2 5 10 15 20 VCB Collector-Base Voltage (V) 5 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT323 Dim Min Max Typ A 0.25 0.40 0.30 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 G 1.20 1.40 1.30 H 1.80 2.20 2.15 J 0.0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.18 0.11 0° 8° α All Dimensions in mm B C G H K M J D L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z C X ZUMTS17N Document number: DS32159 Rev. 2 - 2 Dimensions Value (in mm) Z 2.8 X 0.7 Y 0.9 C 1.9 E 1.0 E 6 of 7 www.diodes.com October 2012 © Diodes Incorporated A Product Line of Diodes Incorporated ZUMTS17N IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2012, Diodes Incorporated www.diodes.com ZUMTS17N Document number: DS32159 Rev. 2 - 2 7 of 7 www.diodes.com October 2012 © Diodes Incorporated