EMH9 / UMH9N / IMH9A Datasheet NPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline Parameter Tr1 and Tr2 VCC 50V 100mA 10kW 47kW IC(MAX.) R1 R2 EMT6 UMT6 (6) (1) (2) (5) (4) SMT6 (4) lFeatures 1) Built-In Biasing Resistors. 2) Two DTC114Y chips in one package. 3) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 4) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 5) Only the on/off conditions need to be set for operation, making the circuit design easy. 6) Lead Free/RoHS Compliant. (3) (2) (1) (3) EMH9 (SC-107C) (5) (6) (2) Inverter circuit, Interface circuit, Driver circuit (4) (3) UMH9N SOT-353 (SC-88) (6) (1) IMH9A SOT-457 (SC-74) lInner circuit EMH9 / UMH9N lApplication (5) IMH9A OUT (6) IN (5) GND (4) OUT (4) IN (5) GND (6) (1) GND (2) IN (3) OUT (3) GND (2) IN (1) OUT lPackaging specifications Package Package size (mm) Taping code EMH9 EMT6 1616 T2R 180 8 8,000 H9 UMH9N UMT6 2021 TR 180 8 3,000 H9 IMH9A SMT6 2928 T108 180 8 3,000 H9 Part No. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/7 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Values Unit Supply voltage VCC 50 V Input voltage VIN -6 to +40 V Output current IO 70 mA IC(MAX.)*1 100 mA 150 (Total)*3 mW 300 (Total)*4 mW Tj 150 °C Tstg -55 to +150 °C Collector current Power dissipation EMH9 / UMH9N PD IMH9A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25°C) <For Tr1 and Tr2 in common> Parameter Symbol Conditions Min. Typ. Max. Unit VI(off) VCC = 5V, IO = 100mA - - 0.3 VI(on) VO = 0.3V, IO = 1mA 1.4 - - VO(on) IO / II = 5mA / 0.25mA - 0.1 0.3 V VI = 5V - - 0.88 mA IO(off) VCC = 50V, VI = 0V - - 0.5 mA DC current gain GI VO = 5V, IO = 5mA 68 - - - Input resistance R1 - 7 10 13 kW Resistance ratio R2/R1 - 3.7 4.7 5.7 - - 250 - MHz Input voltage Output voltage Input current Output current Transition frequency II fT *1 VCE = 10V, IE = -5mA, f = 100MHz V *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 2/7 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lElectrical characteristic curves(Ta = 25°C) Fig.2 Output current vs. input voltage (OFF characteristics) INPUT VOLTAGE : VI(on) [V] OUTPUT CURRENT : IO [A] Fig.1 Input voltage vs. output current (ON characteristics) OUTPUT CURRENT : IO [A] INPUT VOLTAGE : VI(off)[V] Fig.4 DC current gain vs. output current Fig.3 Output current vs. output voltage II= 350μA Ta=25ºC OUTPUT CURRENT : IO [mA] 60 300μA 50 250μA 40 200μA 30 150μA 20 100μA 10 50μA 0 DC CURRENT GAIN : GI 70 0A 0 5 10 OUTPUT CURRENT : IO [A] OUTPUT VOLTAGE : VO [V] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 3/7 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lElectrical characteristic curves(Ta = 25°C) OUTPUT VOLTAGE : VO(on) [V] Fig.5 Output voltage vs. output current OUTPUT CURRENT : IO [A] www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 4/7 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lDimensions (Unit : mm) D EMT6 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 5/7 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lDimensions (Unit : mm) D A e c x Lp A3 S A e l1 A1 y S e1 A b HE E Q L1 UMT6 S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 6/7 INCHES MIN 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 2012.06 - Rev.B Data Sheet EMH9 / UMH9N / IMH9A lDimensions (Unit : mm) SMT6 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 Dimension in mm/inches www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 7/7 INCHES MIN 0.039 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 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