500mA / 50V Digital transistors (with built-in resistor) DTB123YU / DTB123YK Applications Inverter, Interface, Driver Dimensions (Unit : mm) 2.0 DTB123YU Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 0.9 0.2 0.3 0.7 2.1 1.25 (3) 0.1Min. (1) (2) 0.65 0.65 ROHM : UMT3 EIAJ : SC-70 0.15 1.3 (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : F52 DTB123YK 2.9 Structure PNP epitaxial planar silicon transistor (Resistor built-in type) 1.1 0.4 0.8 1.6 2.8 (3) Package (2) UMT3 Packaging type Code SMT3 Taping Taping T106 T146 (1) 0.95 0.95 0.15 1.9 ROHM : SMT3 EIAJ : SC-59 0.3Min. Packaging specifications (1) GND (2) IN (3) OUT Each lead has same dimensions Abbreviated symbol : F52 Part No. Basic ordering unit (pieces) 3000 3000 − DTB123YU − DTB123YK Absolute maximum ratings (Ta=25C) Parameter Symbol Limits DTB123YU DTB123YK Inner circuit Unit Supply voltage VCC −50 Input voltage VIN −12 to +5 V Output current IC −500 mA Power dissipation PD 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C OUT R1 V IN R2 GND(+) OUT IN GND(+) R1=2.2kΩ, R2=10kΩ www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/2 2009.06 - Rev.E DTB123YU / DTB123YK Data Sheet Electrical characteristics (Ta=25C) Parameter Input voltage Output voltage Min. Typ. Max. VI(off) − − −0.3 VI(on) −2 − − VO(on) − −0.1 −0.3 V Symbol Unit VCC= −5V, IO= −100μA V VO= −0.3V, IO= −20mA IO/II= −50mA/−2.5mA II − − −3.0 mA IO(off) − − −0.5 μA GI 56 − − − Input resistance R1 1.54 2.2 2.86 kΩ Resistance ratio R2/R1 3.6 4.5 5.5 − − 200 − MHz Input current Output current DC current gain Transition frequency fT ∗ Conditions VI= −5V VCC= −50V, VI= 0V VO= −5V, IO= −50mA − − VCE= −10V, IE= 50mA, f= 100MHz ∗ Characteristics of built-in transistor Electrical characteristic curves -10m -5m VO= −0.3V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI (on) (V) -50 -20 -10 -5 -2 Ta= −40 °C 25 °C 100 °C -1 -500m -200m -100m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m 1k VCC= −5V -2m -1m -500μ Ta=100°C 25°C −40°C -200μ -100μ -50μ -20μ -10μ -5μ -2μ -1μ 0 VO= −5V 500 DC CURRENT GAIN : GI -100 200 100 Ta=100°C 25°C −40°C 50 20 10 5 2 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 1 -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) INPUT VOLTAGE : VI (off) (V) OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) Fig.2 Output current vs. input voltage (OFF characteristics) Fig.3 DC current gain vs. output current -1 lO/lI=20 OUTPUT VOLTAGE : VO (on) (V) -500m -200m -100m Ta=100°C 25°C −40°C -50m -20m -10m -5m -2m -1m -0.5m -1m -2m -5m -10m -20m -50m -100m -200m -500m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current www.rohm.com c 2009 ROHM Co., Ltd. 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