EPCQ-L Serial Configuration Devices Datasheet

EPCQ-L Serial Configuration Devices Datasheet
2015.01.23
CF52013
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This datasheet describes low-voltage quad-serial configuration (EPCQ-L) devices for Arria 10 devices.
Supported Devices
The following table lists the supported Altera® EPCQ-L devices.
Table 1: Altera EPCQ-L Devices
Device
Memory Size
(bits)
On-Chip
Decompres‐
sion
Support(1)
ISP
Support
Cascading
Support(2)
Reprogram‐
mable
Recommende
d Operating
Voltage (V)
Number
of Die
(256MB)
EPCQ-L256
268,435,456
No
Yes
No
Yes
1.8
1
EPCQ-L512
536,870,912
No
Yes
No
Yes
1.8
2
EPCQ-L1024
1,073,741,824
No
Yes
No
Yes
1.8
4
Features
EPCQ-L devices offer the following features:
•
•
•
•
•
•
•
•
•
•
•
(1)
(2)
Compatibility with Arria 10 FPGAs and SOCs
Native support for active serial (AS) x4
Backward compatibility for AS x1 on Arria 10 devices
Low pin count and non-volatile memory
1.8-V operation
Stacked die device
Manufactured on NOR technology
Available in FBGA24 package
Reprogrammable memory with more than 100,000 erase or program cycles
Write protection support for memory sectors using status register bits
Fast read and extended quad input fast read of the entire memory using a single operation code
EPCQ-L devices are compatible with decompression built into Arria 10 devices.
Multiple EPCQ-L devices may be used on a single FPGA device.
© 2015 Altera Corporation. All rights reserved. ALTERA, ARRIA, CYCLONE, ENPIRION, MAX, MEGACORE, NIOS, QUARTUS and STRATIX words and logos are
trademarks of Altera Corporation and registered in the U.S. Patent and Trademark Office and in other countries. All other words and logos identified as
trademarks or service marks are the property of their respective holders as described at www.altera.com/common/legal.html. Altera warrants performance
of its semiconductor products to current specifications in accordance with Altera's standard warranty, but reserves the right to make changes to any
products and services at any time without notice. Altera assumes no responsibility or liability arising out of the application or use of any information,
product, or service described herein except as expressly agreed to in writing by Altera. Altera customers are advised to obtain the latest version of device
specifications before relying on any published information and before placing orders for products or services.
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Operating Conditions
• Write bytes and extended quad input fast write bytes of the entire memory using a single operation
code
• In-system programming (ISP) support with the SRunner software driver
• ISP support with USB-Blaster™ II, USB-Blaster, EthernetBlaster II, or EthernetBlaster download cables
• By default, the memory array is erased and the bits are set to 1
• During user mode, you can use the ALTASMI_PARALLEL IP core to access the EPCQ-L device
Warning: EPCQ-L devices are only compatible with Arria 10 devices.
Operating Conditions
This section covers information about the absolute maximum ratings, recommended operating
conditions, DC operating conditions, ICC supply current, and capacitance for EPCQ-L devices.
Absolute Maximum Ratings
Table 2: Absolute Maximum Ratings
Symbol
Parameter
Condition
Min
Max
Unit
VCC
Supply voltage With respect
to GND
–0.6
2.4
V
VIO (3), (4)
DC input/
With respect
output voltage to GND
–0.6
VCC + 0.6
V
TSTG
Storage
temperature
–65
150
ºC
No bias
Recommended Operating Conditions
Table 3: Recommended Operating Conditions
Symbol
(3)
(4)
(5)
(6)
Parameter
Condition
Min
Max
Unit
(5)
1.7
2.0
V
VCC
Supply voltage
VI
Input voltage
With respect to GND
–0.5
0.4 +
VCC
V
TA (6)
Operating temperature
For industrial use
–40
85
°C
tR
Input rise time
—
5
ns
—
During signal transitions, minimum voltage may undershoot to –1V for periods less than 10 ns.
During signal transitions, maximum voltage may overshoot to VCC + 1V for periods less than 10 ns.
The maximum VCC rise time is 100 ms.
EPCQ-L devices can be paired with Altera industrial-grade FPGAs operating at junction temperatures up to
100°C as long as the ambient temperature for the EPCQ-L device does not exceed 85°C.
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DC Operating Conditions
Symbol
Condition
Min
Max
Unit
—
—
5
ns
Parameter
Condition
Min
Max
Unit
VIH
High-level input voltage
—
0.7 x
VCC
VCC +
0.4
V
VIL
Low-level input voltage
—
–0.5
0.3 x
VCC
V
VOH
High-level output
voltage
VCC 0.2
—
V
VOL
Low-level output voltage IOL = 1.6 mA (8)
—
0.4
V
II
Input leakage current
VI =VCC or GND
–2
2
µA
Condition
Min
Max
Unit
tF
Parameter
Input fall time
DC Operating Conditions
Table 4: DC Operating Conditions
Symbol
IOH = -100 µA (7)
ICC Supply Current
Table 5: ICC Supply Current
Symbol
Parameter
ICC0
VCC supply current
Standby
—
100
µA
ICC1
VCC supply current
During active power
mode
—
20
mA
Min
Max
Unit
Capacitance
Table 6: Capacitance
Symbol
(7)
(8)
(9)
Parameter(9)
Condition
CIN
Input pin capacitance
VIN = 0 V
—
6
pF
CIN/OUT
Input/Output pin
capacitance
VOUT = 0 V
—
8
pF
The IOH parameter refers to the high-level TTL or CMOS output current.
The IOL parameter refers to the low-level TTL or CMOS output current.
Capacitance is sample-tested only at TA = 25ºC and at a 54-MHz frequency.
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Pin Information
Pin Information
The following figure shows the EPCQ-L device in the FBGA24 package.
Figure 1: Pin-Out Diagram for EPCQ-L Devices
5
4
3
2
1
A
B
C
D
E
The following table lists the signals for the EPCQ-L device.
Table 7: Signals for EPCQ-L Devices
Altera Corporation
Signals
Balls
nCS
C2
DCLK
B2
DATA0
D3
DATA1
D2
DATA2
C4
DATA3
D4
VCC
B4
GND
B3
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EPCQ-L Device Pin Description
Signals
5
Balls
A2
A3
A4
A5
B1
B5
C1
C3
N.C.
C5
D1
D5
E1
E2
E3
E4
E5
EPCQ-L Device Pin Description
The following table lists the pin description of the EPCQ-L device.
Table 8: EPCQ-L Device Pin Description
Pin Name
Pin Type
nCS
Input
Description
The active low nCS input signal toggles at the beginning and end of a valid
operation. When this signal is high, the device is deselected and the DATA
pin is tri-stated.
When this signal is low, the device is enabled and is in active mode. After
power up, the EPCQ-L device requires a falling edge on the nCS signal
before you begin any operation.
DCLK
Input
The FPGA provides the DCLK signal. This signal provides the timing for the
serial interface. The data presented on the DATA0 pin is latched to the
EPCQ-L device on the rising edge of the DCLK signal. The data on the DATA
pin changes after the falling edge of the DCLK signal and is latched in to the
FPGA on the next falling edge of the DCLK signal.
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EPCQ-L Device Pin Description
Pin Name
Pin Type
DATA0
I/O
Description
For AS x1 mode, use this pin as an input signal pin to write or program the
EPCQ-L device. During write or program operations, the data is latched on
the rising edge of the DCLK signal.
For AS x4 mode, use this pin as an I/O signal pin. During write or program
operations, this pin acts as an input pin that serially transfers data into the
EPCQ-L device. The data is latched on the rising edge of the DCLK signal.
During read or configuration operations, this pin acts as an output signal
pin that serially transfers data out of the EPCQ-L device to the FPGA. The
data is shifted out on the falling edge of the DCLK signal.
During the extended quad input fast write bytes operation, this pin acts as
an input pin that serially transfers data into the EPCQ-L device. The data is
latched on the rising edge of the DCLK signal. During extended quad input
fast read operation, this pin acts as an output signal pin that serially
transfers data out of the EPCQ-L device to the FPGA. The data is shifted
out on the falling edge of the DCLK signal.
DATA1
I/O
For AS x1 mode, use this pin as an output signal pin that serially transfers
data out of the EPCQ-L device to the FPGA during read or configuration
operations. For AS x4 mode, use this pin as an I/O signal pin. The
transition of the signal is on the falling edge of the DCLK signal.
During the extended quad input fast write bytes operation, this pin acts as
an input signal pin that serially transfers data into the EPCQ-L device. The
data is latched on the rising edge of the DCLK signal.
During extended quad input fast read operation, this pin acts as an output
signal pin that serially transfer data out of the EPCQ-L device to the FPGA.
The data is shifted out on the falling edge of the DCLK signal. During read,
configuration, or program operations, you can enable the EPCQ-L device
by pulling the nCS signal low.
DATA2
I/O
For AS x1 mode, this pin must connect to a 1.8-V power supply.
For AS x4 mode, use this pin as an output signal that serially transfers data
out of the EPCQ-L device to the FPGA during read or configuration
operations. The transition of the signal is on the falling edge of the DCLK
signal.
During the extended quad input fast write bytes operation, this pin acts as
an input pin that serially transfers data into the EPCQ-L device. The data is
latched on the rising edge of the DCLK signal. During the extended quad
input fast read operation, this pin acts as an output signal pin that serially
transfers data out of the EPCQ-L device to the FPGA. The data is shifted
out on the falling edge of the DCLK signal.
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Device Package and Ordering Code
Pin Name
Pin Type
DATA3
I/O
7
Description
For AS x1 mode, this pin must connect to a 1.8-V power supply.
For AS x4 mode, use this pin as an output signal that serially transfers data
out of the EPCQ-L device to the FPGA during read or configuration
operations. The transition of the signal is on the falling edge of the DCLK
signal.
During the extended quad input fast write bytes operation, this pin acts as
an input pin that serially transfers data into the EPCQ-L device. The data is
latched on the rising edge of the DCLK signal. During the extended quad
input fast read operation, this pin acts as an output signal pin that serially
transfers data out of the EPCQ-L device to the FPGA. The data is shifted
out on the falling edge of the DCLK signal.
VCC
Power
GND
Ground
Connect the power pins to a 1.8-V power supply.
Ground pin.
Device Package and Ordering Code
This section describes the package offered in EPCQ-L devices and the ordering codes for each EPCQ-L
device.
Package
The EPCQ-L256, EPCQ-L512, and EPCQ-L1024 devices are available in FBGA24 packages.
Ordering Code
The following table lists the ordering codes for EPCQ-L devices.
Table 9: EPCQ-L Device Ordering Codes
Device
Ordering Code(10)
EPCQ-L256
EPCQL256F24IN
EPCQ-L512
EPCQL512F24IN
EPCQ-L1024
EPCQL1024F24IN
Memory Array Organization
(10)
N indicates that the device is lead free.
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Address Range for EPCQ-L256
The following table lists the memory array organization in supported EPCQ-L devices.
Table 10: Memory Array Organization in EPCQ-L Devices
Details
Bytes
EPCQ-L256
EPCQ-L512
EPCQ-L1024
33,554,432 bytes
(256 Mb)
67,108,864 bytes
(512 Mb)
134,217,728 bytes (1,024 Mb)
512
1,024
2,048
Number of sectors
Bytes per sector
65,536 bytes (512 Kb)
Total numbers of
subsectors(11)
8,192
Bytes per subsector
16,384
32,768
4,096 bytes (32 Kb)
Pages per sector
256
Total number of pages
131,072
Bytes per page
262,144
524,288
256 bytes
Address Range for EPCQ-L256
The following table lists the address range for each sector in EPCQ-L256 devices.
Table 11: Address Range for Sectors 511..0 and Subsectors 8191..0 in EPCQ-L256 Devices—Preliminary
Sector
511
...
255
...
127
...
(11)
Subsector
Address Range (Byte Addresses in HEX)
Start
End
8191
01FFF000h
01FFFFFFh
...
...
...
8176
01FF0000h
01FF0FFFh
...
...
...
4095
00FFF000h
00FFFFFFh
...
...
...
4080
00FF0000h
00FF0FFFh
...
...
...
2047
007FF000h
007FFFFFh
...
...
...
2032
007F0000h
007F0FFFh
...
...
...
Every sector is further divided into 16 subsectors with 4 KB of memory. Therefore, there are 8,192 (512 x 16)
subsectors for the EPCQ-L256 device, 16,384 (1,024 x 16) subsectors for the EPCQ-L512 device, and 32,768
(2,048 x 16) subsectors for the EPCQ-L1024 device.
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Address Range for EPCQ-L512
Sector
Subsector
63
...
0
9
Address Range (Byte Addresses in HEX)
Start
End
1023
003FF000h
003FFFFFh
...
...
...
1008
003F0000h
003F0FFFh
...
...
...
15
0000F000h
0000FFFFh
...
...
...
0
00000000h
00000FFFh
Address Range for EPCQ-L512
The following table lists the address range for each sector in EPCQ-L512 devices.
Table 12: Address Range for Sectors 1023..0 and Subsectors 16383..0 in EPCQ-L256 Devices—Preliminary
Sector
1023
...
511
...
255
...
127
...
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Subsector
Address Range (Byte Addresses in HEX)
Start
End
16383
03FFF000h
03FFFFFFh
...
...
...
16368
03FF0000h
03FF0FFFh
...
...
...
8191
01FFF000h
01FFFFFFh
...
...
...
8176
01FF0000h
01FF0FFFh
...
...
...
4095
00FFF000h
00FFFFFFh
...
...
...
4080
00FF0000h
00FF0FFFh
...
...
...
2047
007FF000h
007FFFFFh
...
...
...
2032
007F0000h
007F0FFFh
...
...
...
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Address Range for EPCQ-L1024
Sector
Subsector
63
...
0
Address Range (Byte Addresses in HEX)
Start
End
1023
003FF000h
003FFFFFh
...
...
...
1008
003F0000h
003F0FFFh
...
...
...
15
0000F000h
0000FFFFh
...
...
...
0
00000000h
00000FFFh
Address Range for EPCQ-L1024
The following table lists the address range for each sector in EPCQ-L1024 devices.
Table 13: Address Range for Sectors 2047..0 and Subsectors 32767..0 in EPCQ-L1024 Devices—Preliminary
Sector
2047
...
1023
...
511
...
255
...
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Subsector
Address Range (Byte Addresses in HEX)
Start
End
32767
07FFF000h
07FFFFFFh
...
...
...
32750
07FF0000h
07FF0FFFh
...
...
...
16383
03FFF000h
03FFFFFFh
...
...
...
16368
03FF0000h
03FF0FFFh
...
...
...
8191
01FFF000h
01FFFFFFh
...
...
...
8176
01FF0000h
01FF0FFFh
...
...
...
4095
00FFF000h
00FFFFFFh
...
...
...
4080
00FF0000h
00FF0FFFh
...
...
...
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Memory Operations
Sector
127
...
63
...
0
Subsector
11
Address Range (Byte Addresses in HEX)
Start
End
2047
007FF000h
007FFFFFh
...
...
...
2032
007F0000h
007F0FFFh
...
...
...
1023
003FF000h
003FFFFFh
...
...
...
1008
003F0000h
003F0FFFh
...
...
...
15
0000F000h
0000FFFFh
...
...
...
0
00000000h
00000FFFh
Memory Operations
This section describes the operations that you can use to access the memory in EPCQ-L devices. When
performing the operation, addresses and data are shifted in and out of the device serially, with the MSB
first.
Timing Requirements
When the active low chip select (nCS) signal is driven low, shift in the operation code into the EPCQ-L
device using the serial data (DATA0) pin. Each operation code bit is latched into the EPCQ-L device on the
rising edge of the DCLK.
While executing an operation, shift in the desired operation code, followed by the address or data bytes as
listed in Table 14 . The device must drive the nCS pin high after the last bit of the operation sequence is
shifted in.
For read operations, the data read is shifted out on the DATA0 pin. You can drive the nCS pin high when
any bit of the data is shifted out.
For write and erase operations, drive the nCS pin high at a byte boundary, that is in a multiple of eight
clock pulses. Otherwise, the operation is rejected and not executed.
All attempts to access the memory contents while a write or erase cycle is in progress are rejected, and the
write or erase cycle continues unaffected.
Addressing Mode
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Summary of Operation Codes
To access the EPCQ-L256, EPCQ-L512, or EPCQ-L1024 memory, you must use the 4-byte addressing
mode. In 4-byte addressing mode, the address width is 32-bit. To enable the 4-byte addressing mode, you
must execute the 4BYTEADDREN operation. This addressing mode takes effect immediately after you
execute the 4BYTEADDREN operation and remains active in the subsequent power-ups. To disable the 4byte addressing mode, you must execute the 4BYTEADDREX operation.
Note: If you are using the Quartus® II software or the SRunner software to program the EPCQ-L256,
EPCQ-L512, or EPCQ-L1024 device, you do not need to execute the 4BYTEADDREN operation.
These software tools automatically enable the 4-byte addressing mode when programming the
device.
Summary of Operation Codes
The following table lists the supported operations.
Table 14: Operation Codes for EPCQ-L Devices
Operation
Operation Code (12)
Address
Bytes
Dummy
Cycles
Data Bytes
DCLK fMAX (MHz)
Read status
b'0000 0101
0
0
1 to
infinite(13)
100
Read bytes
b'0000 0011
4
0
1 to
infinite (13)
50
b'1011 0101
0
0
2
100
Read device identification
b'1001 111x
0
2
1 to 20 (13)
100
Fast read (AS x1)
b'0000 1011
4
8 (14)
1 to
infinite (13)
100
b'1110 1011
4
10 (14)
1 to
infinite (13)
100
Write enable
b'0000 0110
0
0
0
100
Write disable
b'0000 0100
0
0
0
100
Write status
b'0000 0001
0
0
1
100
Write bytes
b'0000 0010
4
0
1 to 256 (15)
100
b'1011 0001
0
0
2
100
Read non-volatile configu‐
ration register
Extended quad input fast
read (AS x4)
Write non-volatile configu‐
ration register
(12)
(13)
(14)
(15)
List MSB first and LSB last.
The status register, data, or read device identification is read out at least once and is continuously read out
until the nCS pin is driven high.
You can configure the number of dummy cycles.
A write bytes operation requires at least one data byte. If more than 256 bytes are sent to the device, only the
last 256 bytes are written to the memory.
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4BYTEADDREN and 4BYTEADDREX Operations
Operation
Operation Code (12)
13
Address
Bytes
Dummy
Cycles
Data Bytes
DCLK fMAX (MHz)
b'0001 0010
4
0
1 to 256 (15)
100
Erase bulk(16)
b'1100 0111
0
0
0
100
Erase die(17)
b'1100 0100
0
0
0
100
Erase sector
b'1101 1000
4
0
0
100
4BYTEADDREN
b'1011 0111
0
0
0
100
4BYTEADDREX
b'1110 1001
0
0
0
100
Extended quad input fast
write bytes
4BYTEADDREN and 4BYTEADDREX Operations
To enable 4BYTEADDREN or 4BYTEADDREX operations, you can select the device by driving the nCS
signal low, followed by shifting in the operation code through DATA0.
The following figure shows the timing diagram for the 4BYTEADDREN operation.
Figure 2: 4BYTEADDREN Timing Diagram
nCS
0
1
2
3
4
5
6
7
DCLK
Operation Code
DATA0
The following figure shows the timing diagram for the 4BYTEADDREX operation.
Figure 3: 4BYTEADDREX Timing Diagram
nCS
0
1
2
3
4
5
6
7
DCLK
Operation Code
DATA0
(12)
(16)
(17)
List MSB first and LSB last.
Erase bulk is applicable to EPCQ-L256 only.
Erase die is applicable to EPCQ-L512 and EPCQ-L1024 only.
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Write Enable Operation
Write Enable Operation
When you enable the write enable operation, the write enable latch bit is set to 1 in the status register. You
must execute this operation before the write bytes, write status, erase bulk, erase sector, erase die,
extended quad input fast write bytes, 4BYTEADDREN, and 4BYTEADDREX operations.
The following figure shows the timing diagram for the write enable operation.
Figure 4: Write Enable Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
DCLK
Operation Code
DATA0
High Impedance
DATA
Non-Volatile Configuration Register Operation
Table 15: Dummy Clock Cycles and Address Bytes for the Non-Volatile Configuration Register Operation
FPGA Device
Address Bytes
Arria 10
4-byte addressing
Dummy Clock Cycles
AS x1
AS x4
10
Table 16: Non-Volatile Configuration Register Operation Bit Definition
Bit
Description
15:12
Number of dummy cycles. When this number is from 0001 to 1110,
the dummy cycles is from 1 to 14.
11:5
Set these bits to 1111111.
4
3:1
(18)
Don't care.
Set these bits to 111.
Default Value
0000 or 1111 (18)
1111111
1
111
The default dummy clock cycles is 10 for extended quad input fast read and 8 for extended dual input fast
and standard fast read.
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Read Non-Volatile Configuration Register Operation
Bit
0
Description
15
Default Value
Address byte setting.
1
• 0—4-byte addressing
• 1—3-byte addressing
Read Non-Volatile Configuration Register Operation
To execute a read non-volatile configuration register, drive the nCS low. For extended SPI protocol, the
operation code is input on DATA0, and output on DATA1. You can terminate the operation by driving the
nCS low at any time during data output. The nonvolatile configuration register can be read continuously.
After all 16 bits of the register have been read, a 0 is output.
Figure 5: Read Non-Volatile Configuration Register Operation Timing Diagram
nCS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
DCLK
Operation Code
DATA0
DATA
High Impedance
NVCR Out
NVCR Out
7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8
LS Byte
MS Byte
Write Non-Volatile Configuration Register Operation
You need to write the non-volatile configuration registers for EPCQ-L devices for different configuration
schemes. If you are using the .jic file, the Quartus II programmer sets the number of dummy clock cycles
and address bytes. If you are using an external programmer tools (3rd party programmer tools), you must
set the non-volatile configuration registers.
To set the non-volatile configuration register, follow these steps:
1. Execute the write enable operation.
2. Execute the write non-volatile configuration register operation.
3. Set the 16-bit register value.
Set the 16-bit register value as b'1110 1110 xxxx 1111 where xxxx is the dummy clock value. When the
xxxx value is from 0001 to 1110, the dummy clock value is from 1 to 14. When xxxx is 0000 or 1111, the
dummy clock value is at the default value, which is 8 for standard fast read (AS x1) mode and 10 for
extended quad input fast read (AS x4) mode.
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Write Disable Operation
Figure 6: Write Non-Volatile Configuration Register Operation Timing Diagram
nCS
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
DCLK
Operation Code
NVCR In
Byte
DATA0
DATA
Byte
7 6 5 4 3 2 1 0 15 14 13 12 11 10 9 8
LS Byte
High Impedance
MS Byte
Write Disable Operation
The write disable operation resets the write enable latch bit in the status register. To prevent the memory
from being written unintentionally, the write enable latch bit is automatically reset when implementing
the write disable operation, and under the following conditions:
•
•
•
•
•
•
•
Power up
Write bytes operation completion
Write status operation completion
Erase bulk operation completion
Erase sector operation completion
Erase die operation completion
Extended quad input fast write bytes operation completion
The following figure shows the timing diagram for the write disable operation.
Figure 7: Write Disable Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
DCLK
Operation Code
DATA0
DATA
High Impedance
Read Status Operation
You can use the read status operation to read the status register. The following figure shows the status bits
in the status register of the EPCQ-L device.
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Block Protection Bits in EPCQ-L256 when TB Bit is Set to 0
Figure 8: Status Register Bits
Bit 7
Bit 0
BP3
TB
BP2
Block Protect
Bit
BP1
BP0
WEL
WIP
Write In
Progress Bit
Block Protect Bits
Top/Bottom
Bit
Write Enable
Latch Bit
If you set the write in progress bit to 1, the EPCQ-L device executes a write or erase cycle and 0 indicates
that no write or erase cycle is in progress.
If you set the write enable latch bit to 0, the EPCQ-L device rejects a write or erase cycle. You must set the
write enable latch bit to 1 before every write bytes, write status, erase bulk, erase die, and erase sector
operations.
Use the top or bottom bit (TB bit) with the block protect bits to determine that the protected area starts
from the top or bottom of the memory array. When the top or bottom bit is set to 0, the protected area
starts from the top of the memory array. When the top or bottom bit is set to 1, the protected area starts
from the bottom of the memory array.
The non-volatile block protect bits determine the area of the memory protected from being written or
erased unintentionally. Table 17 through Table 22 list the protected area in EPCQ-L256, EPCQ-L512,
and EPCQ-L1024 devices with reference to the block protect bits. The erase bulk and erase die operation
is only available when all the block protect bits are set to 0. When any of the block protect bits are set to 1,
the relevant area is protected from being written by a write bytes operation or erased by an erase sector
operation.
Figure 9: Read Status Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
DCLK
Operation Code
DATA0
DATA
High Impedance
Status Register Out
7
6
5
4
3
MSB
2
Status Register Out
1
0
7
6
5
4
3
2
1
0
7
MSB
Block Protection Bits in EPCQ-L256 when TB Bit is Set to 0
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Block Protection Bits in EPCQ-L256 when TB Bit is Set to 1
Table 17: Block Protection Bits in EPCQ-L256 when TB Bit is Set to 0
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
0
0
0
None
All sectors
0
0
0
0
1
Sector 511
Sectors (0 to 510)
0
0
0
1
0
Sectors (510 to 511)
Sectors (0 to 509)
0
0
0
1
1
Sectors (508 to 511)
Sectors (0 to 507)
0
0
1
0
0
Sectors (504 to 511)
Sectors (0 to 503)
0
0
1
0
1
Sectors (496 to 511)
Sectors (0 to 495)
0
0
1
1
0
Sectors (480 to 511)
Sectors (0 to 479)
0
0
1
1
1
Sectors (448 to 511)
Sectors (0 to 447)
0
1
0
0
0
Sectors (384 to 511)
Sectors (0 to 383)
0
1
0
0
1
Sectors (256 to 511)
Sectors (0 to 255)
0
1
0
1
0
All sectors
None
0
1
0
1
1
All sectors
None
0
1
1
0
0
All sectors
None
0
1
1
0
1
All sectors
None
0
1
1
1
0
All sectors
None
0
1
1
1
1
All sectors
None
Block Protection Bits in EPCQ-L256 when TB Bit is Set to 1
Table 18: Block Protection Bits in EPCQ-L256 when TB Bit is Set to 1
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
1
0
0
0
0
None
All sectors
1
0
0
0
1
Sector 0
Sectors (1 to 511)
1
0
0
1
0
Sectors (0 to 1)
Sectors (2 to 511)
1
0
0
1
1
Sectors (0 to 3)
Sectors (4 to 511)
1
0
1
0
0
Sectors (0 to 7)
Sectors (8 to 511)
1
0
1
0
1
Sectors (0 to 15)
Sectors (16 to 511)
1
0
1
1
0
Sectors (0 to 31)
Sectors (32 to 511)
1
0
1
1
1
Sectors (0 to 63)
Sectors (64 to 511)
1
1
0
0
0
Sectors (0 to 127)
Sectors (128 to 511)
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Block Protection Bits in EPCQ-L512 when TB Bit is Set to 0
Status Register Content
19
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
1
1
0
0
1
Sectors (0 to 255)
Sectors (256 to 511)
1
1
0
1
0
All sectors
None
1
1
0
1
1
All sectors
None
1
1
1
0
0
All sectors
None
1
1
1
0
1
All sectors
None
1
1
1
1
0
All sectors
None
1
1
1
1
1
All sectors
None
Block Protection Bits in EPCQ-L512 when TB Bit is Set to 0
Table 19: Block Protection Bits in EPCQ-L512 when TB Bit is Set to 0
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
0
0
0
None
All sectors
0
0
0
0
1
Sector 1023
Sectors (0 to 1022)
0
0
0
1
0
Sectors (1022 to 1023)
Sectors (0 to 1021)
0
0
0
1
1
Sectors (1020 to 1023)
Sectors (0 to 1019)
0
0
1
0
0
Sectors (1016 to 1023)
Sectors (0 to 1015)
0
0
1
0
1
Sectors (1008 to 1023)
Sectors (0 to 1007)
0
0
1
1
0
Sectors (992 to 1023)
Sectors (0 to 991)
0
0
1
1
1
Sectors (960 to 1023)
Sectors (0 to 959)
0
1
0
0
0
Sectors (896 to 1023)
Sectors (0 to 895)
0
1
0
0
1
Sectors (768 to 1023)
Sectors (0 to 767)
0
1
0
1
0
Sectors (512 to 1023)
Sectors (0 to 511)
0
1
0
1
1
All sectors
None
0
1
1
0
0
All sectors
None
0
1
1
0
1
All sectors
None
0
1
1
1
0
All sectors
None
0
1
1
1
1
All sectors
None
Block Protection Bits in EPCQ-L512 when TB Bit is Set to 1
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Block Protection Bits in EPCQ-L1024 when TB Bit is Set to 0
Table 20: Block Protection Bits in EPCQ-L512 when TB Bit is Set to 1
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
1
0
0
0
0
None
All sectors
1
0
0
0
1
Sector 0
Sectors (1 to 1023)
1
0
0
1
0
Sectors (0 to 1)
Sectors (2 to 1023)
1
0
0
1
1
Sectors (0 to 3)
Sectors (4 to 1023)
1
0
1
0
0
Sectors (0 to 7)
Sectors (8 to 1023)
1
0
1
0
1
Sectors (0 to 15)
Sectors (16 to 1023)
1
0
1
1
0
Sectors (0 to 31)
Sectors (32 to 1023)
1
0
1
1
1
Sectors (0 to 63)
Sectors (64 to 1023)
1
1
0
0
0
Sectors (0 to 127)
Sectors (128 to 1023)
1
1
0
0
1
Sectors (0 to 255)
Sectors (256 to 1023)
1
1
0
1
0
Sectors (0 to 511)
Sectors (512 to 1023)
1
1
0
1
1
All sectors
None
1
1
1
0
0
All sectors
None
1
1
1
0
1
All sectors
None
1
1
1
1
0
All sectors
None
1
1
1
1
1
All sectors
None
Block Protection Bits in EPCQ-L1024 when TB Bit is Set to 0
Table 21: Block Protection Bits in EPCQ-L1024 when TB Bit is Set to 0
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
0
0
0
0
None
All sectors
0
0
0
0
1
Sector 2047
Sectors (0 to 2046)
0
0
0
1
0
Sectors (2046 to 2047)
Sectors (0 to 2045)
0
0
0
1
1
Sectors (2044 to 2047)
Sectors (0 to 2043)
0
0
1
0
0
Sectors (2040 to 2047)
Sectors (0 to 2039)
0
0
1
0
1
Sectors (2032 to 2047)
Sectors (0 to 2031)
0
0
1
1
0
Sectors (2016 to 2047)
Sectors (0 to 2015)
0
0
1
1
1
Sectors (1984 to 2047)
Sectors (0 to 1983)
0
1
0
0
0
Sectors (1920 to 2047)
Sectors (0 to 1919)
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Status Register Content
21
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
0
1
0
0
1
Sectors (1792 to 2047)
Sectors (0 to 1791)
0
1
0
1
0
Sectors (1536 to 2047)
Sectors (0 to 1535)
0
1
0
1
1
Sectors (1024 to 2047)
Sectors (0 to 1023)
0
1
1
0
0
All sectors
None
0
1
1
0
1
All sectors
None
0
1
1
1
0
All sectors
None
0
1
1
1
1
All sectors
None
Block Protection Bits in EPCQ-L1024 when TB Bit is Set to 1
Table 22: Block Protection Bits in EPCQ-L1024 when TB Bit is Set to 1
Status Register Content
Memory Content
TB Bit
BP3 Bit
BP2 Bit
BP1 Bit
BP0 Bit
Protected Area
Unprotected Area
1
0
0
0
0
None
All sectors
1
0
0
0
1
Sector 0
Sectors (1 to 2047)
1
0
0
1
0
Sectors (0 to 1)
Sectors (2 to 2047)
1
0
0
1
1
Sectors (0 to 3)
Sectors (4 to 2047)
1
0
1
0
0
Sectors (0 to 7)
Sectors (8 to 2047)
1
0
1
0
1
Sectors (0 to 15)
Sectors (16 to 2047)
1
0
1
1
0
Sectors (0 to 31)
Sectors (32 to 2047)
1
0
1
1
1
Sectors (0 to 63)
Sectors (64 to 2047)
1
1
0
0
0
Sectors (0 to 127)
Sectors (128 to 2047)
1
1
0
0
1
Sectors (0 to 255)
Sectors (256 to 2047)
1
1
0
1
0
Sectors (0 to 511)
Sectors (512 to 2047)
1
1
0
1
1
Sectors (0 to 1023)
Sectors (1024 to 2047)
1
1
1
0
0
All sectors
None
1
1
1
0
1
All sectors
None
1
1
1
1
0
All sectors
None
1
1
1
1
1
All sectors
None
Write Status Operation
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Read Bytes Operation
The write status operation does not affect the write enable latch and write in progress bits. You can use the
write status operation to set the status register block protection and top or bottom bits. Therefore, you can
implement this operation to protect certain memory sectors. Refer to Table 17 through Table 22. After
setting the block protect bits, the protected memory sectors are treated as read-only memory. You must
execute the write enable operation before the write status operation.
The following figure shows the timing diagram for the write status operation.
Figure 10: Write Status Operation Timing Diagram
nCS
1
0
3
2
4
5
6
7
8
9
10
11
12
13
14
15
2
1
0
DCLK
Operation Code
Status Register
7
DATA0
6
5
4
3
MSB
DATA
High Impedance
Immediately after the nCS signal drives high, the device initiates the self-timed write status cycle. The selftimed write status cycle usually takes 5 ms for all EPCQ-L devices and is guaranteed to be less than 8 ms.
For details about tWS, refer to Table 24. You must account for this delay to ensure that the status register
is written with the desired block protect bits. Alternatively, you can check the write in progress bit in the
status register by executing the read status operation while the self-timed write status cycle is in progress.
Set the write in progress bit to 1 during the self-timed write status cycle and 0 when it is complete.
Read Bytes Operation
When you execute the read bytes operation, you first shift in the read bytes operation code, followed by a
4-byte addressing mode (A[31..0]). Each address bit is latched in on the rising edge of the DCLK signal.
After the address is latched in, the memory contents of the specified address are shifted out serially on the
DATA1 pin, beginning with the MSB. When reading back data programmed from a Raw Programming
Data File (.rpd), the content is shifted out serially beginning with the LSB. Each data bit is shifted out on
the falling edge of the DCLK signal. The maximum DCLK frequency during the read bytes operation is
50 MHz.
The following figure shows the timing diagram for the read bytes operation.
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Fast Read Operation
Figure 11: Read Bytes Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
10
36
37
3
2
38
39
40
41
42
43
44
45
46
47
DCLK
Operation Code
32-Bit Address
31
DATA0
30
29
1
0
MSB
DATA1
High Impedance
DATA Out 1
7
6
5
4
3
DATA Out 2
2
1
0
7
MSB
The first byte address can be at any location. The device automatically increases the address to the next
higher address after shifting out each byte of data. When the device reaches the highest address, the
address counter restarts at the beginning of the same die, allowing the memory contents to be read out
indefinitely until the read bytes operation is terminated by driving the nCS signal high. A complete device
reading is done by executing the read operation:
• two times for EPCQ-L512 devices
• four times for EPCQ-L1024 devices
If the read bytes operation is shifted in while a write or erase cycle is in progress, the operation is not
executed and does not affect the write or erase cycle in progress.
Fast Read Operation
When you execute the fast read operation, you first shift in the fast read operation code, followed by a 4byte addressing mode (A[31..0]), and dummy cycle(s) with each bit being latched-in during the rising
edge of the DCLK signal. Then, the memory contents at that address is shifted out on DATA1 with each bit
being shifted out at a maximum frequency of 100 MHz during the falling edge of the DCLK signal.
The following figure shows the operation sequence of the fast read operation.
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Extended Quad Input Fast Read Operation
Figure 12: Fast Read Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
10
36
37
38
39
3
2
1
0
DCLK
Operation Code
32-Bit Address
31
DATA0
30
29
51
52
MSB
High Impedance
DATA1
nCS
40
41
42
43
44
45
46
2
1
47
48
49
50
6
5
53
54
55
2
1
0
DCLK
Dummy Cycle(s)
DATA0
7
6
5
4
3
0
DATA Out 1
DATA1
7
4
MSB
3
DATA Out 2
7
MSB
6
5
4
3
2
1
0
7
MSB
The first byte address can be at any location. The device automatically increases the address to the next
higher address after shifting out each byte of data.When the device reaches the highest address, the
address counter restarts at the beginning of the same die, allowing the read sequence to continue
indefinitely. A complete device reading is done by executing the read operation:
• two times for EPCQ-L512 devices
• four times for EPCQ-L1024 devices
You can terminate the fast read operation by driving the nCS signal high at any time during data output. If
the fast read operation is shifted in while an erase, program, or write cycle is in progress, the operation is
not executed and does not affect the erase, program, or write cycle in progress.
Extended Quad Input Fast Read Operation
This operation is similar to the fast read operation except that the data and addresses are shifted in and
out on the DATA0, DATA1, DATA2, and DATA3 pins.
The following figure shows the operation sequence of the extended quad input fast read operation.
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Read Device Identification Operation
Figure 13: Extended Quad Input Fast Read Operation
nCS
0 1
2
3 4 5
6
7
8 9 10 11 12 13 14 15 16
26 27 28 29 30 31 32
DCLK
Operating Code
DATA0
DATA1
DATA2
DATA3
Don’t Care
Don’t Care
‘1’
I/O Switches from Input to Output
28 24 20 16 12 8 4
0
4
0 4 0
4
29 25 21 17 13 9 5
1
5
1 5 1
5
30 26 22 18 14 10 6
2
6
2 6 2
6
31 27 23 19 15 11 7
3
7
3 7 3
7
32-Bit Address
Dummy Cycles
Byte 1 Byte 2
When the device reaches the highest address, the address counter restarts at the beginning of the same die,
allowing the read sequence to continue indefinitely. A complete device reading is done by executing the
read operation:
• two times for EPCQ-L512 devices
• four times for EPCQ-L1024 devices
Read Device Identification Operation
This operation reads the 8-bit device identification of the EPCQ-L device from the DATA1 output pin. If
this operation is shifted in while an erase or write cycle is in progress, the operation is not executed and
does not affect the erase or write cycle in progress.
The following table lists the EPCQ-L device identifications.
Table 23: EPCQ-L Device Identification
EPCQ-L Device
Silicon ID (Binary Value)
EPCQ-L256
b'0001 1001
EPCQ-L512
b'0010 0000
EPCQ-L1024
b'0010 0001
The 8-bit device identification of the EPCQ-L device is shifted out on the DATA1 pin on the falling edge of
the DCLK signal. LSB is first shifted into the FPGA device.
The following figure shows the operation sequence of the read device identification operation.
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Write Bytes Operation
Figure 14: Read Device Identification Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
10
20
21
23
24
25
26
27
28
29
30
31
32
2
1
0
DCLK
Operation Code
Two Dummy Cycles
14
15
DATA0
13
3
2
1
0
Silicon ID
MSB
High Impedance
DATA1
7
6
5
4
3
MSB
Write Bytes Operation
This operation allows bytes to be written to the memory. You must execute the write enable operation
before the write bytes operation. After the write bytes operation is completed, the write enable latch bit in
the status register is set to 0.
When you execute the write bytes operation, you shift in the write bytes operation code, followed by a 4byte addressing mode (A[31..0]), and at least one data byte on the DATA0 pin. If the eight LSBs (A[7..0])
are not all 0, all sent data that goes beyond the end of the current page is not written into the next page.
Instead, this data is written at the start address of the same page. You must ensure the nCS signal is set low
during the entire write bytes operation.
The following figure shows the operation sequence of the write bytes operation.
Figure 15: Write Bytes Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
31
30
10
36
37
38
39
40
41
42
3
2
1
0
7
6
5
43
44
45
46
47
48
49
50
2
1
0
7
6
5
51
52
53
54
55
2072 2073 2074 2075 2076 2077 2078 2079
2
1
0
7
DCLK
Operation Code
DATA0
32-Bit Address
MSB
29
Data Byte 1
MSB
4
3
Data Byte 2
MSB
4
3
Data Byte 256
6
5
4
3
2
1
0
MSB
If more than 256 data bytes are shifted into the EPCQ-L device with a write bytes operation, the
previously latched data is discarded and the last 256 bytes are written to the page. However, if less than
256 data bytes are shifted into the EPCQ-L device, they are guaranteed to be written at the specified
addresses and the other bytes of the same page are not affected.
The device initiates a self-timed write cycle immediately after the nCS signal is driven high. For details
about the self-timed write cycle time, refer to tWB in Table 24. You must account for this amount of delay
before another page of memory is written. Alternatively, you can check the write in progress bit in the
status register by executing the read status operation while the self-timed write cycle is in progress. The
write in progress bit is set to 1 during the self-timed write cycle and 0 when it is complete.
Note: You must erase all the memory bytes of EPCQ-L devices before you implement the write bytes
operation. You can erase all the memory bytes by executing the erase sector operation in a sector or
the erase bulk or erase die operation throughout the entire memory.
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Extended Quad Input Fast Write Bytes Operation
Extended Quad Input Fast Write Bytes Operation
This operation is similar to the write bytes operation except that the data and addresses are shifted in on
the DATA0, DATA1, DATA2, and DATA3 pins.
The following figure shows the operation sequence of the extended quad input fast write bytes operation.
Figure 16: Extended Quad Input Fast Write Bytes Operation
nCS
0 1 2 3 4
5 6 7
8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29
DCLK
Operation Code
DATA0
DATA1
DATA2
DATA3
Don’t Care
Don’t Care
‘1’
32-Bit Address
Data In
2
1
Data In
3
4
Data In
5
6
7
28 24 20 16 12 8
4 0 4 0 4
0 4
0 4 0 4
0 4 0
4 0
29 25 21 17 13 9
5 1 5 1 5
1 5
1 5 1 5
1 5 1
5 1
30 26 22 18 14 10 6 2 6 2 6
2 6
2 6 2 6
2 6 2
6 2
31 27 23 19 15 11 7 3 7 3 7
3 7
3 7 3 7
3 7 3
7 3
MSB
MSB
MSB
MSB
MSB
MSB
MSB
Erase Bulk Operation
This operation sets all the memory bits to 1or 0xFF. Similar to the write bytes operation, you must execute
the write enable operation before the erase bulk operation.
If you are using the EPCQ-L256 device and wish to erase the whole memory of your device, you cannot
use the erase die operation and instead must execute the erase bulk operation.
You can implement the erase bulk operation by driving the nCS signal low and then shifting in the erase
bulk operation code on the DATA0 pin. The nCS signal must be driven high after the eighth bit of the erase
bulk operation code has been latched in.
The following figure shows the erase bulk operation.
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Erase Die Operation
Figure 17: Erase Bulk Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
DCLK
Operation Code
DATA0
The device initiates a self-timed erase bulk cycle immediately after the nCS signal is driven high. For
details about the self-timed erase bulk cycle time, refer to tWB in Table 24.
You must account for this delay before accessing the memory contents. Alternatively, you can check the
write in progress bit in the status register by executing the read status operation while the self-timed erase
cycle is in progress. The write in progress bit is set to 1 during the self-timed erase cycle and 0 when it is
complete. The write enable latch bit in the status register is reset to 0 before the erase cycle is complete.
Erase Die Operation
This operation sets all the memory bits of a particular die in an EPCQ-L512 or EPCQ-L1024 device to 1 or
0xFF. Similar to the write bytes operation, you must execute the write enable operation before the erase
die operation.
If you are using the EPCQ-L512 or EPCQ-L1024 device, you must execute the erase die operation the
erase the memory of your device. You need to issue the erase die operation for each die in your device. For
example, you need to issue the erase die operation twice for the EPCQ-L512 device and four times for the
EPCQ-L1024 device. EPCQ-L512 and EPCQ-L1024 devices have more than one die per device.
You can implement the erase die operation by driving the nCS signal low and then shifting in the erase die
operation code on the DATA0 pin, followed by the address bytes, any address within the single 256 Mb die
is valid. The nCS signal must be driven high after the eighth bit of the erase die operation code has been
latched in.
Erase Sector Operation
The erase sector operation allows you to erase a certain sector in the EPCQ-L device by setting all the bits
inside the sector to 1 or 0xFF. This operation is useful if you want to access the unused sectors as a general
purpose memory in your applications. You must execute the write enable operation before the erase
sector operation.
When you execute the erase sector operation, you must first shift in the erase sector operation code,
followed by the 4-byte addressing mode (A[31..0]) of the chosen sector on the DATA0 pin. The 4-byte
addressing mode for the erase sector operation can be any address inside the specified sector. For details
about the sector address range, refer to Table 11 through Table 13. Drive the nCS signal high after the
eighth bit of the erase sector operation code has been latched in.
The following figure shows the erase sector operation.
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Figure 18: Erase Sector Operation Timing Diagram
nCS
0
1
2
3
4
5
6
7
8
9
36
37
38
39
3
2
1
0
DCLK
Operation Code
DATA0
32-Bit Address
31
30
MSB
The device initiates a self-timed erase sector cycle immediately after the nCS signal is driven high. For
details about the self-timed erase sector cycle time, refer to tES in Table 24. You must account for this
amount of delay before another page of memory is written. Alternatively, you can check the write in
progress bit in the status register by executing the read status operation while the self-timed erase cycle is
in progress. The write in progress bit is set to 1 during the self-timed erase cycle and 0 when it is complete.
The write enable latch bit in the status register is set to 0 before the self-timed erase cycle is complete.
Power Mode
EPCQ-L devices support active and standby power modes. When the nCS signal is low, the device is
enabled and is in active power mode. The FPGA is configured while the EPCQ-L device is in active power
mode. When the nCS signal is high, the device is disabled but remains in active power mode until all
internal cycles are completed, such as write or erase operations. The EPCQ-L device then goes into
standby power mode. The ICC1 and ICC0 parameters list the VCC supply current when the device is in
active and standby power modes. Refer to Table 5.
Timing Information
Write Operation Timing
The following figure shows the timing waveform for the write operation.
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Write Operation Timing
Figure 19: Write Operation Timing Diagram
tCSH
nCS
tNCSH
tCL
tNCSSU
tCH
DCLK
tDH
tDSU
Bit n
DATA0
DATA
Bit n - 1
Bit 0
High Impedance
The following table lists the EPCQ-L device timing parameters for the write operation.
Table 24: Write Operation Parameters
Symbol
Parameter
Min
Typical
Max
Unit
fWCLK
Write clock frequency (from the
FPGA, download cable, or embedded
processor) for write enable, write
disable, read status, read device
identification, write bytes, erase bulk,
erase die, and erase sector operations
—
—
100
MHz
tCH
DCLK high time
4
—
—
ns
tCL
DCLK low time
4
—
—
ns
tNCSSU
Chip select (nCS) setup time
4
—
—
ns
tNCSH
Chip select (nCS) hold time
4
—
—
ns
tDSU
DATA[] in setup time before the rising
edge on DCLK
2
—
—
ns
tDH
DATA[] hold time after the rising edge
on DCLK
3
—
—
ns
tCSH
Chip select (nCS) high time
50
—
—
ns
tWB
Write bytes cycle time
—
0.6
5
ms
tWS
Write status cycle time
—
1.3
8
ms
—
240
480
s
Erase bulk cycle time for EPCQ-L256
tEB
Erase die cycle time for EPCQ-L512
Erase die cycle time for EPCQ-L1024
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Read Operation Timing
Symbol
Parameter
Min
Typical
Max
Unit
—
0.7
3
s
—
0.25
8
s
Erase sector cycle time for EPCQ-L256
tES
Erase sector cycle time for EPCQ-L512
Erase sector cycle time for EPCQ-L1024
Erase subsector cycle time for EPCQL256
Erase subsector cycle time for EPCQL512
tESS
Erase subsector cycle time for EPCQL1024
Read Operation Timing
The following figure shows the timing waveform for the read operation.
Figure 20: Read Operation Timing Diagram
nCS
tCH
DCLK
tCL
tnCLK2D
DATA
DATA0
Bit N
tODIS
Bit N - 1
Bit 0
Add_Bit 0
The following table lists the EPCQ-L device timing parameters for the read operation.
Table 25: Read Operation Parameters
Symbol
Min
Max
Unit
Read clock frequency (from the FPGA or
embedded processor) for read bytes
operations
—
50
MHz
Fast read clock frequency (from the FPGA
or embedded processor) for fast read bytes
operation
—
100
MHz
tCH
DCLK high time
4
—
ns
tCL
DCLK low time
4
—
ns
tODIS
Output disable time after read
—
8
ns
tnCLK2D
Clock falling edge to DATA
—
7
ns
fRCLK
Parameter
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Programming and Configuration File Support
Programming and Configuration File Support
The Quartus II software provides programming support for EPCQ-L devices. When you select an EPCQL device, the Quartus II software automatically generates the Programmer Object File (.pof) to program
the device. The software allows you to select the appropriate EPCQ-L device density that most efficiently
stores the configuration data for the selected FPGA.
You can program the EPCQ-L device in-system by an external microprocessor using the SRunner
software driver. The SRunner software driver is developed for embedded EPCQ-L device programming
that you can customize to fit in different embedded systems. The SRunner software driver reads .rpd files
and writes to the EPCQ-L devices. The programming time is comparable to the Quartus II software
programming time. Because the FPGA reads the LSB of the .rpd data first during the configuration
process, the LSB of .rpd bytes must be shifted out first during the read bytes operation and shifted in first
during the write bytes operation.
Writing and reading the .rpd file to and from the EPCQ-L device is different from the other data and
address bytes.
During the ISP of an EPCQ-L device using the USB-Blaster II, USB-Blaster, EthernetBlaster II, or
EthernetBlaster download cable, the cable pulls the nCONFIG signal low to reset the FPGA and overrides
the 10-kΩ pull-down resistor on the nCE pin of the FPGA. The download cable then uses the interface
pins depending on the selected AS mode to program the EPCQ-L device. When programming is
complete, the download cable releases the interface pins of the EPCQ-L device and the nCE pin of the
FPGA and pulses the nCONFIG signal to start the configuration process.
The FPGA can program the EPCQ-L device in-system using the JTAG interface with the serial flash
loader (SFL). This solution allows you to indirectly program the EPCQ-L device using the same JTAG
interface that is used to configure the FPGA.
Related Information
•
•
•
•
•
•
•
Using the Serial FlashLoader with the Quartus II Software
Altera ASMI Parallel IP Core User Guide
USB-Blaster II Download Cable User Guide
USB-Blaster Download Cable User Guide
EthernetBlaster II Communications Cable User Guide
EthernetBlaster Communications Cable User Guide
Configuration, Design Security, and Remote System Upgrades in Arria 10 Devices
Document Revision History
The following table lists the revision history for this document.
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Table 26: Document Revision History
Date
Version
Changes
January 2015
2015.01.23
• Updated the package name to FBGA24.
• Changed erase bulk operation statement for EPCQL256 devices.
• Added stacked die device in 'Features'.
• Added Number of die column in 'Supported Devices'.
• Updated Read Bytes and Fast Read operation descrip‐
tion to reflect stacked die properties.
• Added read non-volatile configuration register.
• Updated AS x1 dummy clock cycles for non-volatile
configuration registers.
• Updated write non-volatile configuration register 16bit register value.
June 2014
2014.06.17
Initial release.
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