ACT8896 Rev 1, 06-Sep-13 Advanced PMU for Samsung S3C6410 FEATURES GENERAL DESCRIPTION • • • • • • • The ACT8896 is a complete, cost effective, highlyefficient ActivePMUTM power management solution, optimized for the unique power, voltagesequencing, and control requirements of the Samsung S3C6410 processor. Optimized for Samsung S3C6410 Processor Three Step-Down DC/DC Converters Four Low-Dropout Linear Regulators I2CTM Serial Interface Advanced Enable/Disable Sequencing Controller Minimal External Components Tiny 4×4mm TQFN44-32 Package − 0.75mm Package Height − Pb-Free and RoHS Compliant This device features three step-down DC/DC converters and four low-noise, low-dropout linear regulators. The three DC/DC converters utilize a highefficiency, fixed-frequency (2MHz), current-mode PWM control architecture that requires a minimum number of external components. Two DC/DCs are capable of supplying up to 900mA of output current, while the third supports up to 700mA. All four lowdropout linear regulators are high-performance, low-noise, regulators that supply up to 150mA, 150mA, 250mA, and 250mA, respectively. The ACT8896 is available in a compact, Pb-Free and RoHS-compliant TQFN44-32 package. TYPICAL APPLICATION DIAGRAM Innovative PowerTM -1Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TABLE OF CONTENTS General Information ..................................................................................................................................... p. 01 Functional Block Diagram ............................................................................................................................ p. 03 Ordering Information .................................................................................................................................... p. 04 Pin Configuration ......................................................................................................................................... p. 04 Pin Descriptions ........................................................................................................................................... p. 05 Absolute Maximum Ratings ......................................................................................................................... p. 07 I2C Interface Electrical Characteristics ........................................................................................................ p. 08 Global Register Map .................................................................................................................................... p. 09 Register and Bit Descriptions ...................................................................................................................... p. 10 System Control Electrical Characteristics.................................................................................................... p. 13 Step-Down DC/DC Electrical Characteristics .............................................................................................. p. 14 Low-Noise LDO Electrical Characteristics ................................................................................................... p. 15 Typical Performance Characteristics ........................................................................................................... p. 16 System control information .......................................................................................................................... p. 21 Interfacing with the Samsung S3C6410 ........................................................................................... p. 21 Control Signals ................................................................................................................................. p. 22 Push-Button Control ......................................................................................................................... p. 23 Control Sequences ........................................................................................................................... p. 23 Functional Description ................................................................................................................................. p. 25 I2C Interface ..................................................................................................................................... p. 25 Voltage Monitor and Interrupt ...................................................................................................... p. 25 Thermal Shutdown ........................................................................................................................... p. 25 Step-Down DC/DC Regulators .................................................................................................................... p. 26 General Description.......................................................................................................................... p. 26 100% Duty Cycle Operation ............................................................................................................. p. 26 Synchronous Rectification ................................................................................................................ p. 26 Soft-Start .......................................................................................................................................... p. 26 Compensation .................................................................................................................................. p. 26 Configuration Options....................................................................................................................... p. 26 OK[ ] and Output Fault Interrupt ....................................................................................................... p. 27 PCB Layout Considerations ............................................................................................................. p. 27 Low-Noise, Low-Dropout Linear Regulators................................................................................................ p. 28 General Description.......................................................................................................................... p. 28 Output Current Limit ......................................................................................................................... p. 28 Compensation .................................................................................................................................. p. 28 Configuration Options....................................................................................................................... p. 28 OK[ ] and Output Fault Interrupt ....................................................................................................... p. 28 PCB Layout Considerations ............................................................................................................. p. 28 TQFN44-32 Package Outline and Dimensions ........................................................................................... p. 30 Innovative PowerTM -2Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 FUNCTIONAL BLOCK DIAGRAM Innovative PowerTM -3Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 ORDERING INFORMATION PART NUMBER VOUT1/VSTBY1 VOUT2/VSTBY2 VOUT3/VSTBY3 VOUT4 VOUT5 VOUT6 VOUT7 PACKAGE PINS ACT8896Q4I133-T 3.3V/3.3V 1.3V/1.3V 1.3V/1.3V 1.2V 1.2V 1.2V 3.3V TQFN44-32 32 TEMPERATURE RANGE -40°C to +85°C : All Active-Semi components are RoHS Compliant and with Pb-free plating unless specified differently. The term Pb-free means semiconductor products that are in compliance with current RoHS (Restriction of Hazardous Substances) standards. : Standard product options are identified in this table. Contact factory for custom options, minimum order quantity is 12,000 units. : To select VSTBYx as a output regulation voltage of REGx, drive VSEL to a logic high. The VSTBYx can be set by software via I2C interface, refer to appropriate sections of this datasheet for VSTBYx setting. PIN CONFIGURATION GP1 GP2 SW2 VP2 NC2 nIRQ nPBSTAT GP3 SW3 VP3 VP1 SW1 nRSTO REFBP nPBIN PWRHLD TOP VIEW Thin - QFN (TQFN44-32) Innovative PowerTM -4Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 PIN DESCRIPTIONS PIN NAME DESCRIPTION 1 OUT1 Output Feedback Sense for REG1. Connect this pin directly to the output node to connect the internal feedback network to the output voltage. 2 GA Analog Ground. Connect GA directly to a quiet ground node. Connect GA, GP1,GP2 and GP3 together at a single point as close to the IC as possible. 3 OUT4 Output Voltage for REG4. Capable of delivering up to 150mA of output current. Connect a 1.5µF ceramic capacitor from OUT4 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 4 OUT5 Output Voltage for REG5. Capable of delivering up to 150mA of output current. Connect a 1.5µF ceramic capacitor from OUT5 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 5 INL45 Power Input for REG4 and REG5. Bypass to GA with a high quality ceramic capacitor placed as close to the IC as possible. 6 INL67 Power Input for REG6 and REG7. Bypass to GA with a high quality ceramic capacitor placed as close to the IC as possible. 7 OUT6 Output Voltage for REG6. Capable of delivering up to 250mA of output current. Connect a 2.2µF ceramic capacitor from OUT6 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 8 OUT7 Output Voltage for REG7. Capable of delivering up to 250mA of output current. Connect a 2.2µF ceramic capacitor from OUT7 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 9 nPBIN Master Enable Input. Drive nPBIN to GA through a 50kΩ resistor to enable the IC, drive nPBIN directly to GA to assert a Hard-Reset condition. Refer to the nPBIN Multi-Function Input section for more information. nPBIN is internally pulled up to VVDDREF through a 35kΩ resistor. 10 PWRHLD Power Hold Input. Refer to the Control Sequences section for more information. 11 nRSTO Active Low Reset Output. See the nRSTO Output section for more information. 12 nIRQ 13 nPBSTAT Active-Low Open-Drain Push-Button Status Output. nPBSTAT is asserted low whenever the nPBIN is pushed, and is high-Z otherwise. See the nPBSTAT Output section for more information. 14 GP3 Power Ground for REG3. Connect GA, GP1, GP2, and GP3 together at a single point as close to the IC as possible. 15 SW3 Switching Node Output for REG3. Connect this pin to the switching end of the inductor. 16 VP3 Power Input for REG3. Bypass to GP3 with a high quality ceramic capacitor placed as close to the IC as possible. 17 PWREN 18 NC1 19 OUT3 Output Feedback Sense for REG3. Connect this pin directly to the output node to connect the internal feedback network to the output voltage. 20 VSEL Step-Down DC/DCs Output Voltage Selection. Drive to logic low to select default output voltage. Drive to logic high to select secondary output voltage. See the Output Voltage Programming section for more information. 21 SCL Clock Input for I2C Serial Interface. 22 SDA Data Input for I2C Serial Interface. Data is read on the rising edge of SCL. Open-Drain Interrupt Output. nIRQ asserts any time an unmasked fault condition exists or an interrupt occurs. See the nIRQ Output section for more information. Power Enable Input. Refer to the Control Sequences section for more information. Not Connected. Not internally connected. Innovative PowerTM -5Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 PIN DESCRIPTIONS CONT’D PIN 23 NAME DESCRIPTION Power supply for the internal reference. Connect this pin directly to the system power supply. VDDREF Bypass VDDREF to GA with a 1µF capacitor placed as close to the IC as possible. Star connection with VP1, VP2 and VP3 preferred. Output Feedback Sense for REG2. Connect this pin directly to the output node to connect the internal feedback network to the output voltage. 24 OUT2 25 NC2 Not Connected. Not internally connected. 26 VP2 Power Input for REG2 and System Control. Bypass to GP2 with a high quality ceramic capacitor placed as close to the IC as possible. 27 SW2 Switching Node Output for REG2. Connect this pin to the switching end of the inductor. 28 GP2 Power Ground for REG2. Connect GA, GP1,GP2 and GP3 together at a single point as close to the IC as possible. 29 GP1 Power Ground for REG1. Connect GA, GP1,GP2 and GP3 together at a single point as close to the IC as possible. 30 SW1 Switching Node Output for REG1. Connect this pin to the switching end of the inductor. 31 VP1 Power Input for REG1. Bypass to GP1 with a high quality ceramic capacitor placed as close to the IC as possible. 32 REFBP EP EP Reference Bypass. Connect a 0.047μF ceramic capacitor from REFBP to GA. This pin is discharged to GA in shutdown. Exposed Pad. Must be soldered to ground on PCB. Innovative PowerTM -6Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT VP1 to GP1, VP2 to GP2, VP3 to GP3 -0.3 to + 6 V INL, VDDREF to GA -0.3 to + 6 V -0.3 to (VVDDREF + 0.3) V -0.3 to + 6 V SW1, OUT1 to GP1 -0.3 to (VVP1 + 0.3) V SW2, OUT2 to GP2 -0.3 to (VVP2 + 0.3) V SW3, OUT3 to GP3 -0.3 to (VVP3 + 0.3) V OUT4, OUT5, OUT6, OUT7 to GA -0.3 to (VINL + 0.3) V -0.3 to + 0.3 V 27.5 °C/W Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C -65 to 150 °C 300 °C nPBIN, SCL, SDA, REFBP, PWRHLD, PWREN, VSEL to GA nRSTO, nIRQ, nPBSTAT to GA GP1, GP2, GP3 to GA Junction to Ambient Thermal Resistance (θJA) Storage Temperature Lead Temperature (Soldering, 10 sec) : Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. Innovative PowerTM -7Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 I2C INTERFACE ELECTRICAL CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN SCL, SDA Input Low VVDDREF = 3.1V to 5.5V, TA = -40ºC to 85ºC SCL, SDA Input High VVDDREF = 3.1V to 5.5V, TA = -40ºC to 85ºC TYP UNIT 0.35 V 1.55 V SDA Leakage Current SCL Leakage Current 1 SDA Output Low MAX IOL = 5mA 1 µA 2 µA 0.35 V SCL Clock Period, tSCL 1.5 µs SDA Data Setup Time, tSU 100 ns SDA Data Hold Time, tHD 300 ns Start Setup Time, tST For Start Condition 100 ns Stop Setup Time, tSP For Stop Condition 100 ns Figure 1: I2C Compatible Serial Bus Timing tSCL SCL tST tHD tSU tSP SDA Start condition Innovative PowerTM -8Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. Stop condition www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 GLOBAL REGISTER MAP BITS OUTPUT ADDRESS SYS SYS 0x00 0x01 REG1 0x20 REG1 0x21 REG1 REG2 REG2 REG2 REG3 REG3 REG3 REG4 REG4 REG5 REG5 REG6 0x22 0x30 0x31 0x32 0x40 0x41 0x42 0x50 0x51 0x54 0x55 0x60 REG6 0x61 REG7 0x64 REG7 0x65 D7 NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT NAME DEFAULT TRST D6 D5 D4 D3 nSYSMODE nSYSLEVMSK nSYSSTAT 0 1 0 R Reserved Reserved Reserved Reserved D2 D1 D0 SYSLEV[3] SYSLEV[2] SYSLEV[1] SYSLEV[0] 0 1 1 1 SCRATCH SCRATCH SCRATCH SCRATCH 0 0 0 0 0 0 0 0 Reserved Reserved VSET1[5] VSET1[4] VSET1[3] VSET1[2] VSET1[1] VSET1[0] 0 0 1 1 1 0 0 1 Reserved Reserved VSET2[5] VSET2[4] VSET2[3] VSET2[2] VSET2[1] VSET2[0] 0 0 1 1 1 0 0 ON PHASE MODE DELAY[2]2 DELAY[1]2 DELAY[0]2 nFLTMSK 1 OK 0 0 0 0 0 0 0 R Reserved Reserved VSET1[5] VSET1[4] VSET1[3] VSET1[2] VSET1[1] VSET1[0] 0 0 0 1 1 0 1 0 Reserved Reserved VSET2[5] VSET2[4] VSET2[3] VSET2[2] VSET2[1] VSET2[0] 1 0 1 0 0 0 1 ON PHASE MODE DELAY[2]2 DELAY[1]2 DELAY[0]2 nFLTMSK 0 OK 0 0 0 0 0 0 0 R Reserved Reserved VSET1[5] VSET1[4] VSET1[3] VSET1[2] VSET1[1] VSET1[0] 0 0 0 1 1 0 1 0 Reserved Reserved VSET2[5] VSET2[4] VSET2[3] VSET2[2] VSET2[1] VSET2[0] 1 1 0 0 0 0 ON PWRSTAT MODE 0 0 0 0 0 0 0 R Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] 1 0 0 2 DELAY[2] 0 0 0 1 ON DIS LOWIQ DELAY[2]2 2 DELAY[1] 2 DELAY[0] 1 0 nFLTMSK OK DELAY[1]2 DELAY[0]2 nFLTMSK 0 OK 0 1 0 0 0 0 0 R Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] 0 0 0 1 1 0 0 0 nFLTMSK OK 2 2 2 ON DIS LOWIQ 0 1 0 0 0 0 0 R Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] 1 0 0 DELAY[2] DELAY[1] DELAY[0] 0 0 0 1 ON DIS LOWIQ DELAY[2]2 0 1 0 0 0 0 0 R Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] 0 0 1 1 1 0 0 ON DIS LOWIQ DELAY[2]2 0 1 0 0 DELAY[1]2 DELAY[0]2 nFLTMSK DELAY[1]2 DELAY[0]2 nFLTMSK 0 0 0 0 OK 1 OK R : Default values of ACT8896Q4I133-T. 2: Regulator turn-on delay bits. Automatically cleared to default values when the input power is removed or falls below the system UVLO. Innovative PowerTM -9Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 REGISTER AND BIT DESCRIPTIONS Table 1: Global Register Map OUTPUT ADDRESS BIT SYS 0x00 [7] NAME ACCESS DESCRIPTION TRST R/W Reset Timer Setting. Defines the reset time-out threshold. Reset time-out is 65ms when value is 1, reset time-out is 260ms when value is 0. See nRSTO Output section for more information. R/W SYSLEV Mode Select. Defines the response to the SYSLEV voltage detector, 1: Generate an interrupt when VVDDREF falls below the programmed SYSLEV threshold, 0: automatic shutdown when VVDDREF falls below the programmed SYSLEV threshold. R/W System Voltage Level Interrupt Mask. Disabled interrupt by default, set to 1 to enable this interrupt. See the Programmable System Voltage Monitor section for more information SYS 0x00 [6] nSYSMODE SYS 0x00 [5] nSYSLEVMSK SYS 0x00 [4] nSYSSTAT R SYS 0x00 [3:0] SYSLEV R/W SYS 0x01 [7:4] - R SYS 0x01 [3:0] SCRATCH R/W REG1 0x20 [7:6] - R REG1 0x20 [5:0] VSET1 R/W REG1 0x21 [7:6] - R REG1 0x21 [5:0] VSET2 R/W Secondary Output Voltage Selection. Valid when VSEL is driven high. See the Output Voltage Programming section for more information. REG1 0x22 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG1 0x22 [6] PHASE R/W Regulator Phase Control. Set bit to 1 for regulator to operate 180° out of phase with the oscillator, clear bit to 0 for regulator to operate in phase with the oscillator. REG1 0x22 [5] MODE R/W Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transit to power-savings mode under light-load conditions. REG1 0x22 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG1, REG2, REG3 Turn-on Delay section for more information. REG1 0x22 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG1 0x22 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG2 0x30 [7:6] - R REG2 0x30 [5:0] VSET1 R/W REG2 0x31 [7:6] - R System Voltage Status. Value is 1 when VVDDREF is lower than the SYSLEV voltage threshold, value is 0 when VVDDREF is higher than the system voltage detection threshold. System Voltage Detect Threshold. Defines the SYSLEV voltage threshold. See the Programmable System Voltage Monitor section for more information. Reserved. Scratchpad Bits. Non-functional bits, maybe be used by user to store system status information. Volatile bits, which are cleared upon system shutdown. Reserved. Primary Output Voltage Selection. Valid when VSEL is driven low. See the Output Voltage Programming section for more information. Reserved. Reserved. Primary Output Voltage Selection. Valid when VSEL is driven low. See the Output Voltage Programming section for more information. Reserved. Innovative PowerTM - 10 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 REGISTER AND BIT DESCRIPTIONS CONT’D OUTPUT ADDRESS BIT NAME ACCESS DESCRIPTION REG2 0x31 [5:0] VSET2 R/W Secondary Output Voltage Selection. Valid when VSEL is driven high. See the Output Voltage Programming section for more information. REG2 0x32 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG2 0x32 [6] PHASE R/W Regulator Phase Control. Set bit to 1 for regulator to operate 180° out of phase with the oscillator, clear bit to 0 for regulator to operate in phase with the oscillator. REG2 0x32 [5] MODE R/W Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transit to powersavings mode under light-load conditions. REG2 0x32 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG1, REG2, REG3 Turn-on Delay section for more information. REG2 0x32 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG2 0x32 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG3 0x40 [7:6] - R REG3 0x40 [5:0] VSET1 R/W REG3 0x41 [7:6] - R REG3 0x41 [5:0] VSET2 R/W Secondary Output Voltage Selection. Valid when VSEL is driven high. See the Output Voltage Programming section for more information. REG3 0x42 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG3 0x42 [6] PWRSTAT R/W Configures regulator behavior with respect to the nPBIN input. Set bit to 0 to enable regulator when nPBIN is asserted. REG3 0x42 [5] MODE R/W Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transition to powersavings mode under light-load conditions. REG3 0x42 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG1, REG2, REG3 Turn-on Delay section for more information. REG3 0x42 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG3 0x42 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG4 0x50 [7:6] - R Reserved. Primary Output Voltage Selection. Valid when VSEL is driven low. See the Output Voltage Programming section for more information. Reserved. Reserved. REG4 0x50 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG4 0x51 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG4 0x51 [6] DIS R/W Output Discharge Control. When activated, discharges LDO output to GA through 1.5kΩ when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG4 0x51 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG4 0x51 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG4, REG5, REG6, REG7 Turn-on Delay section for more information. REG4 0x51 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. Innovative PowerTM - 11 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 REGISTER AND BIT DESCRIPTIONS CONT’D OUTPUT ADDRESS BIT NAME ACCESS DESCRIPTION Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG4 0x51 [0] OK R/W REG5 0x54 [7:6] - R REG5 0x54 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG5 0x55 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. Reserved. REG5 0x55 [6] DIS R/W Output Discharge Control. When activated, discharges LDO output to GA through 1.5kΩ when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG5 0x55 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG5 0x55 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG4, REG5, REG6, REG7 Turn-on Delay section for more information. REG5 0x55 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG5 0x55 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG6 0x60 [7:6] - R Reserved. REG6 0x60 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG6 0x61 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG6 0x61 [6] DIS R/W Output Discharge Control. When activated, discharges LDO output to GA through 1.5kΩ when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG6 0x61 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG6 0x61 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG4, REG5, REG6, REG7 Turn-on Delay section for more information. REG6 0x61 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG6 0x61 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG7 0x64 [7:6] - R Reserved. REG7 0x64 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG7 0x65 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG7 0x65 [6] DIS R/W Output Discharge Control. When activated, discharges LDO output to GA through 1.5kΩ when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG7 0x65 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG7 0x65 [4:2] DELAY R/W Regulator Turn-On Delay Control. See the REG4, REG5, REG6, REG7 Turn-on Delay section for more information. REG7 0x65 [1] nFLTMSK R/W Regulator Fault Mask Control. Set bit to 1 enable to faultinterrupts, clear bit to 0 to disable fault-interrupts. REG7 0x65 [0] OK R/W Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. Innovative PowerTM - 12 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 SYSTEM CONTROL ELECTRICAL CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS Input Voltage Range MIN TYP 2.7 MAX UNIT 5.5 V 2.65 V UVLO Threshold Voltage VVDDREF Rising UVLO Hysteresis VVDDREF Falling 200 REG1 and REG5 Enabled. REG2, REG3, REG4, REG6 and REG7 Disabled 185 REG1, REG2, REG3, REG4 and REG5 Enabled. REG6 and REG7 Disabled 350 REG1, REG2, REG3, REG4, REG5, REG6 and REG7 Enabled 420 All Regulators Disabled 1.5 3.0 µA 2 2.2 MHz Supply Current Shutdown Supply Current Oscillator Frequency Logic High Input Voltage 2.2 1.8 2.45 µA 1.4 1 V Logic Low Input Voltage Leakage Current VnIRQ = VnRSTO = 4.2V Low Level Output Voltage2 ISINK = 5mA nRSTO Delay Thermal Shutdown Temperature mV Temperature rising Thermal Shutdown Hysteresis 0.4 V 1 µA 0.35 V 260 ms 160 °C 20 °C : PWRHLD, PWREN, VSEL are logic inputs. 2: nPBSTAT, nIRQ, nRSTO are open drain outputs. 3: Typical value shown. Actual value may vary from 227.9ms to 291.2ms. Innovative PowerTM - 13 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 STEP-DOWN DC/DC ELECTRICAL CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER CONDITIONS Operating Voltage Range MIN TYP 2.7 5.5 V 2.7 V Input Voltage Rising UVLO Hysteresis Input Voltage Falling 100 Quiescent Supply Current Regulator Enabled 65 90 µA Shutdown Current VVP = 5.5V, Regulator Disabled 0 1 µA mV VOUT ≥ 1.2V, IOUT = 10mA -1% VNOM 1% VOUT < 1.2V, IOUT = 10mA -2% VNOM 2% Line Regulation VVP = Max(VNOM1 +1, 3.2V) to 5.5V Load Regulation IOUT = 10mA to IMAX Power Good Threshold Power Good Hysteresis Oscillator Frequency 2.6 UNIT UVLO Threshold Output Voltage Accuracy 2.5 MAX V 0.15 %/V 0.0017 %/mA VOUT Rising 93 %VNOM VOUT Falling 2 %VNOM 2 VOUT ≥ 20% of VNOM 1.8 VOUT = 0V 2 2.2 MHz 500 kHz Soft-Start Period 400 µs Minimum On-Time 75 ns REG1 Maximum Output Current 0.9 Current Limit 1.2 A 1.4 1.7 A PMOS On-Resistance ISW1 = -100mA 0.18 Ω NMOS On-Resistance ISW1 = 100mA 0.16 Ω SW1 Leakage Current VVP1 = 5.5V, VSW1 = 0 or 5.5V 0 1 µA REG2 Maximum Output Current 0.7 Current Limit 0.9 PMOS On-Resistance A 1.1 ISW2 = -100mA 0.21 NMOS On-Resistance ISW2 = 100mA 0.16 SW2 Leakage Current VVP2 = 5.5V, VSW2 = 0 or 5.5V 0 1.3 A Ω Ω 1 µA REG3 Maximum Output Current 0.9 Current Limit 1.2 A 1.4 1.7 A PMOS On-Resistance ISW3 = -100mA 0.18 Ω NMOS On-Resistance ISW3 = 100mA 0.16 Ω SW3 Leakage Current VVP3 = 5.5V, VSW3 = 0 or 5.5V 0 1 µA : VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section. 2: IMAX Maximum Output Current. Innovative PowerTM - 14 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 LOW-NOISE LDO ELECTRICAL CHARACTERISTICS (VINL = 3.6V, COUT4 = COUT5 = 1.5µF, COUT6 = COUT7 = 2.2µF, LOWIQ[ ] = [0], TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS Operating Voltage Range Output Voltage Accuracy Line Regulation Load Regulation Power Supply Rejection Ratio Supply Current per Output MIN MAX UNIT 5.5 V 2.5 VOUT ≥ 1.2V, TA = 25°C, IOUT = 10mA -1% VNOM 2% VOUT < 1.2V, TA = 25°C, IOUT = 10mA -2% VNOM 4% VINL = Max (VOUT + 0.5V, 3.6V) to 5.5V LOWIQ[ ] = [0] 0.05 VINL = Max (VOUT + 0.5V, 3.6V) to 5.5V LOWIQ[ ] = [1] 0.5 IOUT = 1mA to IMAX2 0.08 V mV/V f = 1kHz, IOUT = 20mA, VOUT =1.2V 75 f = 10kHz, IOUT = 20mA, VOUT =1.2V 65 V/A dB Regulator Enabled, LOWIQ[ ] = [0] 37 60 Regulator Enabled, LOWIQ[ ] = [1] 31 52 0 1 Regulator Disabled Soft-Start Period TYP µA VOUT = 2.9V 140 µs Power Good Threshold VOUT Rising 89 % Power Good Hysteresis VOUT Falling 3 % Output Noise IOUT = 20mA, f = 10Hz to 100kHz, VOUT = 1.2V 50 µVRMS Discharge Resistance LDO Disabled, DIS[ ] = 1 1.5 kΩ REG4 Dropout Voltage IOUT = 80mA, VOUT > 3.1V Maximum Output Current Current Limit 90 180 150 VOUT = 95% of regulation voltage Stable COUT4 Range mV mA 200 mA 1.5 20 µF 280 mV REG5 Dropout Voltage IOUT = 80mA, VOUT > 3.1V Maximum Output Current Current Limit VOUT = 95% of regulation voltage Stable COUT5 Range 140 150 mA 200 mA 1.5 20 µF 180 mV REG6 Dropout Voltage IOUT = 120mA, VOUT > 3.1V Maximum Output Current Current Limit 90 250 VOUT = 95% of regulation voltage Stable COUT6 Range mA 300 mA 2.2 20 µF 280 mV REG7 Dropout Voltage IOUT = 120mA, VOUT > 3.1V Maximum Output Current Current Limit VOUT = 95% of regulation voltage Stable COUT7 Range 140 250 mA 300 mA 2.2 20 µF : VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section. 2: IMAX Maximum Output Current. 3: Dropout Voltage is defined as the differential voltage between input and output when the output voltage drops 100mV below the regulation voltage (for 3.1V output voltage or higher) : LDO current limit is defined as the output current at which the output voltage drops to 95% of the respective regulation voltage. Under heavy overload conditions the output current limit folds back by 30% (typ) Innovative PowerTM - 15 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) Frequency vs. Temperature VREF vs. Temperature 0 -0.42 2 Frequency (%) VREF (%) 0.42 2.5 -20 0 20 40 60 80 100 1.5 1 0.5 0 -0.5 Typical VREF=1.2V -0.84 -40 ACT8896-002 ACT8896-001 0.84 Typical Oscillator Frequency=2MHz -1 -40 120 -20 0 20 40 60 Temperature (°C) Temperature (°C) nPBIN Startup Sequence PWRHLD Startup Sequence ACT8896-004 ACT8896-003 CH1 80 85 CH1 CH2 CH2 CH3 CH3 CH4 CH4 CH5 CH5 CH1: VPWRHLD, 5V/div CH2: VOUT1, 2V/div CH3: VOUT5, 1V/div CH4: VOUT6, 1V/div CH5: VOUT7, 2V/div TIME: 400μs/div CH1: VnPBIN, 5V/div CH2: VOUT1, 2V/div CH3: VOUT5, 1V/div CH4: VOUT6, 1V/div CH5: VOUT7, 2V/div TIME: 400μs/div PWREN Sequence ACT8896-005 CH1 CH2 CH3 CH4 CH1: VPWREN, 2V/div CH2: VOUT2, 1V/div CH3: VOUT3, 1V/div CH4: VOUT4, 1V/div TIME: 2ms/div Innovative PowerTM - 16 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) Push-Button Response (First Power-Up) Manual Reset Response ACT8896-007 ACT8896-006 CH1 CH1 CH2 CH2 CH3 CH3 CH1: VnPBIN, 2V/div CH2: VnPBSTAT, 2V/div CH3: VnRSTO, 2V/div TIME: 100ms/div CH1: VnPBIN, 2V/div CH2: VnPBSTAT, 2V/div CH3:VnRSTO , 2V/div TIME: 100ms/div nPBIN Resistor = 50kΩ REG1 Efficiency vs. Output Current REG2 Efficiency vs. Output Current VOUT = 1.3V 80 Efficiency (%) Efficiency (%) VIN = 5.0V VIN = 4.2V ACT8896-009 VOUT = 3.3V VIN = 3.6V 100 ACT8896-008 100 80 nPBIN Resistor = 0Ω 60 40 20 VIN = 3.6V 60 VIN = 5.0V VIN = 4.2V 40 20 0 0 1 10 100 1000 10 1 100 1000 Output Current (mA) Output Current (mA) REG3 Efficiency vs. Output Current ACT8896-010 100 VOUT3 = 1.3V Efficiency (%) 80 VIN = 3.6V 60 VIN = 5.0V VIN = 4.2V 40 20 0 1 10 100 1000 Output Current (mA) Innovative PowerTM - 17 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) REG1 Output Voltage vs. Temperature REG2 Output Voltage vs. Temperature Output Voltage (V) 3.306 3.302 3.298 3.294 3.290 -40 -20 0 20 40 60 80 100 VOUT2 = 1.3V ILOAD = 100mA 1.306 Output Voltage (V) VOUT1 = 3.3V ILOAD = 100mA 1.302 1.298 1.294 1.290 -40 120 -20 0 40 60 80 100 120 REG2 MOSFET Resistance REG3 Output Voltage vs. Temperature ACT8896-014 350 ACT8896-013 VOUT3 = 1.3V ILOAD = 100mA ILOAD = 100mA 300 250 RDSON (mΩ) 1.306 Output Voltage (V) 20 Temperature (°C) Temperature (°C) 1.310 ACT8896-012 1.310 ACT8896-011 3.310 1.302 1.298 PMOS 200 NMOS 150 100 1.294 1.290 -40 50 0 -20 0 20 40 60 80 100 3.0 120 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Temperature (°C) REG1, 3 MOSFET Resistance ACT8896-015 350 ILOAD = 100mA 300 RDSON (mΩ) 250 PMOS 200 150 NMOS 100 50 0 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) Innovative PowerTM - 18 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) Output Voltage vs. Output Current Output Voltage vs. Output Current 3.30 3.10 2.90 2.70 2.50 1.260 Output Voltage (V) Output Voltage (V) REG7 1.300 ACT8896-017 3.50 ACT8896-016 3.70 REG4 1.220 1.180 1.140 2.30 2.10 50 0 100 150 200 250 1.100 300 0 20 40 60 80 100 120 140 160 Output Current (mA) Output Current (mA) Output Voltage vs. Output Current Output Voltage vs. Output Current 1.220 REG5 1.180 1.140 1.260 Output Voltage (V) Output Voltage (V) 1.260 1.300 1.100 1.220 20 40 60 80 100 120 140 REG6 1.180 1.140 1.100 0 ACT8896-019 ACT8896-018 1.300 160 0 50 Dropout Voltage vs. Output Current REG4 80 60 40 VIN = 3.3V 60 80 100 120 140 160 Output Current (mA) Innovative PowerTM - 19 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. 200 REG5 150 100 50 VIN = 3.3V 0 0 40 250 Dropout Voltage (mV) Dropout Voltage (mV) 120 20 250 ACT8896-021 ACT8896-020 140 0 200 Dropout Voltage vs. Output Current 160 20 150 Output Current (mA) Output Current (mA) 100 100 0 20 40 60 80 100 120 140 160 Output Current (mA) www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) Dropout Voltage vs. Output Current Dropout Voltage vs. Output Current 140 REG6 120 100 80 60 40 20 250 Dropout Voltage (mV) Dropout Voltage (mV) 160 300 REG7 200 150 100 50 VIN = 3.3V VIN = 3.3V 0 0 50 100 150 200 250 0 300 0 50 100 150 200 250 300 Output Current (mA) Output Current (mA) Output Voltage vs. Temperature Region of Stable COUT ESR vs. Output Current 3.00 ESR (Ω) 2.50 2.00 REG4, REG5, REG6 1.50 ACT8896-025 REG7 3.50 1 ACT8896-024 4.00 Output Voltage (V) ACT8896-023 ACT8896-022 180 0.1 Stable ESR 1.00 0.50 0.01 0 -40 -20 0 20 40 60 80 100 120 Temperature (°C) 0 50 100 150 200 250 Output Current (mA) LDO Output Voltage Noise ACT8896-026 CH1 CH1: VOUTx, 200µV/div (AC COUPLED) TIME: 200ms/div Innovative PowerTM - 20 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 SYSTEM CONTROL INFORMATION Interfacing with the Samsung S3C6410 The ACT8896 is optimized for use in applications using the S3C6410 processor, supporting both the power domains as well as the signal interface for these processors. While the ACT8896 supports many possible configurations for powering these processors, one of the most common configurations is detailed in this datasheet. In general, this document refers to the ACT8896 pin names and functions. However, in cases where the description of interconnections between these devices benefits by doing so, both the ACT8896 pin names and the Samsung processor pin names are provided. When this is done, the S3C6410 pin names are located after the ACT8896 pin names, and are italicized and located inside parentheses. For example, PWREN (XPWRRGTON) refers to the logic signal applied to the ACT8896's PWREN input, identifying that it is driven from the S3C6410's XPWRRGTON output. Likewise, OUT1 (VDD_IO) refers to ACT8896's OUT1 pin, identifying that it is connected to the S3C6410's VDD_IO power domain. Table 2: ACT8896 and Samsung S3C6410 Power Domains POWER DOMAIN ACT8896 CHANNEL TYPE DEFAULT VOLTAGE CURRENT CAPABILITY VDD_IO REG1 DC/DC 3.3V/3.3V 900mA VDD_INT REG2 DC/DC 1.3V/1.3V 700mA VDD_ARM REG3 DC/DC 1.3V/1.3V 900mA VDD_xPLL REG4 LDO 1.2V 150mA VDD_Alive REG5 LDO 1.2V 150mA VDD12_UOTG REG6 LDO 1.2V 250mA VDD33_UOTG REG7 LDO 3.3V 250mA Table 3: ACT8896 and Samsung S3C6410 Power Modes POWER MODE CONTROL STATE POWER DOMAIN STATE QUIESCENT CURRENT ALL ON PWRHLD is asserted, PWREN is asserted REG1, REG2, REG3, REG4, REG5, REG6 and REG7 are all on 420µA NORMAL PWRHLD is asserted, PWREN is asserted, REG6 and REG7 are disabled by I2C REG1, REG2, REG3, REG4 and REG5 are on. REG6 and REG7 are off 350µA SLEEP ALL OFF PWRHLD is asserted, PWREN is de-asserted, REG1 and REG5 are on. REG2, REG3, REG4, REG6 and REG7 are off REG6 and REG7 are disabled by I2C PWRHLD is de-asserted, PWREN is deasserted Innovative PowerTM - 21 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. REG1, REG2, REG3, REG4, REG5, REG6 and REG7 are all off 185µA <18µA www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 Table 4: ACT8896 and Samsung S3C6410 Signal Interface ACT8896 DIRECTION SAMSUNG S3C6410 PWREN XPWRRGTON SCL Xi2cSCL[0] SDA Xi2cSDA[0] VSEL DVS_GPIO nRSTO XnRESET nIRQ XEINT0 nPBSTAT XEINT1 PWRHLD Power hold GPIO 1: Optional connection for DVS control. 2, : Typical connections shown, actual connections may vary. : Optional connection for power hold control. Table 5: Control Pins PIN NAME OUTPUT nPBIN REG1, REG5, REG6, REG7 PWRHLD REG1, REG5, REG6, REG7 PWREN REG2, REG3, REG4 Control Signals nPBSTAT Output Enable Inputs The ACT8896 features a variety of control inputs, which are used to enable and disable outputs depending upon the desired mode of operation. PWREN, PWRHLD are logic inputs, while nPBIN is a unique, multi-function input. Refer to Table 5 for a description of which channels are controlled by each input. nPBIN Multi-Function Input ACT8896 features the nPBIN multi-function pin, which combines system enable/disable control with a hardware reset function. Select either of the two pin functions by asserting this pin, either through a direct connection to GA, or through a 50kΩ resistor to GA, as shown in Figure 2. nPBSTAT is an open-drain output that reflects the state of the nPBIN input; nPBSTAT is asserted low whenever nPBIN is asserted, and is high-Z otherwise. This output is typically used as an interrupt signal to the processor, to initiate a software-programmable routine such as operating mode selection or to open a menu. Connect nPBSTAT to an appropriate supply voltage (typically OUT1) through a 10kΩ or greater resistor. Figure 2: nPBIN Input Manual Reset Function The second major function of the nPBIN input is to provide a manual-reset input for the processor. To manually-reset the processor, drive nPBIN directly to GA through a low impedance (less than 2.5kΩ). When this occurs, nRSTO immediately asserts low, then remains asserted low until the nPBIN input is de-asserted and the reset timeout period expires. Innovative PowerTM - 22 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 nRSTO Output nRSTO is an open-drain output which asserts low upon startup or when manual reset is asserted via the nPBIN input. When asserted on startup, nRSTO remains low until reset timeout period expires after OUT1 reaches its power-OK threshold. When asserted due to manual-reset, nRSTO immediately asserts low, then remains asserted low until the nPBIN input is de-asserted and the reset timeout period expires. Connect a 10kΩ or greater pull-up resistor from nRSTO to an appropriate voltage supply (typically OUT1). nIRQ Output nIRQ is an open-drain output that asserts low any time an interrupt is generated. Connect a 10kΩ or greater pull-up resistor from nIRQ to an appropriate voltage supply. nIRQ is typically used to drive the interrupt input of the system processor. Many of the ACT8896's functions support interruptgeneration as a result of various conditions. These are typically masked by default, but may be unmasked via the I2C interface. For more information about the available fault conditions, refer to the appropriate sections of this datasheet. Note that under some conditions a false interrupt may be generated upon initial startup. For this reason, it is recommended that the interrupt service routine check and validate nSYSLEVMSK[-] and nFLTMSK[-] bits before processing an interrupt generated by these bits. These interrupts may be validated by nSYSSTAT[-], OK[-] bits. Push-Button Control The ACT8896 is designed to initiate a system enable sequence when the nPBIN multi-function input is asserted. Once this occurs, a power-on sequence commences, as described below. The power-on sequence must complete and the microprocessor must take control (by asserting PWREN or PWRHLD) before nPBIN is de-asserted. If the microprocessor is unable to complete its power-up routine successfully before the user lets the push-button go off, the ACT8896 automatically shuts the system down. This provides protection against accidental or momentary assertions of the push-button. If desired, longer “push-and-hold” times can be easily implemented by simply adding an additional time delay before asserting PWREN or PWRHLD. Control Sequences The ACT8896 features a variety of control sequences that are optimized for supporting system enable and disable, as well as SLEEP mode of the Samsung S3C6410 processor. Enabling/Disabling Sequence A typical enable sequence initiates as a result of asserting nPBIN, and begins by enabling REG1. When REG1 reaches its power-OK threshold, REG5, REG6 and REG7 are enabled and nRSTO is asserted low, resetting the microprocessor. If REG1 is above its power-OK threshold when the reset timer expires, nRSTO is de-asserted, allowing the microprocessor to begin its boot sequence. During the boot sequence, the microprocessor must assert PWRHLD, holding REG1, REG5, REG6 and REG7, and assert PWREN (XPWRRGTON), enabling REG2, REG3 and REG4 to ensure that the system remains powered after nPBIN is released. Once the power-up routine is completed, the system remains enabled after the push-button is released as long as either PWRHLD or PWREN are asserted high. If the processor does not assert PWRHLD or PWREN before the user releases the push-button, the boot-up sequence is terminated and all regulators are disabled. This provides protection against "false-enable", when the pushbutton is accidentally depressed, and also ensures that the system remains enabled only if the processor successfully completes the boot-up sequence. As with the enable sequence, a typical disable sequence is initiated when the user presses the push-button, which interrupts the processor via the nPBSTAT output. The actual disable sequence is completely software-controlled, but typically involved initiating various “clean-up” processes then finally de-assert PWRHLD and PWREN, disabling all regulators and shutting the system down. SLEEP Mode Sequence The ACT8896 supports Samsung S3C6410 Processor’s SLEEP mode operation. Once a successful power-up routine has been completed, SLEEP mode may be initiated through a variety of software-controlled mechanisms. SLEEP mode is typically initiated when the user presses the push-button during normal operation. Pressing the push-button asserts the nPBIN input, which asserts the nPBSTAT output, which interrupts the processor. In response to this interrupt the processor should disable REG6 and REG7 via I2C first, then de-assert PWREN, disabling REG2, REG3, and REG4. PWRHLD should remain asserted during SLEEP mode so that Innovative PowerTM - 23 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 REG1 and REG5 remain enabled. Waking from SLEEP mode is initiated when the user presses the push-button again, which enables REG6 and REG7, and asserts nPBSTAT. Processors should respond by asserting PWREN, which enables REG2, REG3 and REG4 so that normal operation may resume. Figure 3: Enable/Disable Sequence Figure 4: Sleep Mode Sequence Innovative PowerTM - 24 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 FUNCTIONAL DESCRIPTION I2C Interface below the SYSLEV[-] voltage threshold: 2 The ACT8896 features an I C interface that allows advanced programming capability to enhance overall system performance. To ensure compatibility with a wide range of system processors, the I2C interface supports clock speeds of up to 400kHz (“Fast-Mode” operation) and uses standard I2C commands. I2C write-byte commands are used to program the ACT8896, and I2C read-byte commands are used to read the ACT8896’s internal registers. The ACT8896 always operates as a slave device, and is addressed using a 7-bit slave address followed by an eighth bit, which indicates whether the transaction is a readoperation or a write-operation, [1011011x]. SDA is a bi-directional data line and SCL is a clock input. The master device initiates a transaction by issuing a START condition, defined by SDA transitioning from high to low while SCL is high. Data is transferred in 8-bit packets, beginning with the MSB, and is clocked-in on the rising edge of SCL. Each packet of data is followed by an “Acknowledge” (ACK) bit, used to confirm that the data was transmitted successfully. For more information regarding the I2C 2-wire serial interface, go to the NXP website: http://www.nxp.com. 1) If nSYSMODE[-] = 1 (default case), when system vo l ta g e l e ve l i n te r r u p t is unmasked (nSYSLEVMSK[ ]=1) and VVDDREF falls below the programmable threshold, the ACT8896 asserts nIRQ, providing a software “under-voltage alarm”. The response to this interrupt is controlled by the CPU, but will typically initiate a controlled shutdown sequence either or alert the user that the battery is low. In this case the interrupt is cleared when VVDDREF rises up again above the SYSLEV rising threshold and nSYSSTAT[-] is read via I2C. 2) If nSYSMODE[-] = 0, when VVDDREF falls below the programmable threshold the ACT8896 shuts down, immediately disabling all regulators. This option is useful for implementing a programmable “undervoltage lockout” function that forces the system off when the battery voltage falls below the SYSLEV threshold voltage. Since this option does not support a controlled shutdown sequence, it is generally used as a "fail-safe" to shut the system down when the battery voltage is too low. Table 6: SYSLEV Falling Threshold SYSLEV[3:0] Voltage Monitor and Interrupt 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 Programmable System Voltage Monitor The ACT8896 features a programmable systemvoltage monitor, which monitors the voltage at VDDREF and compares it to a programmable threshold voltage. The programmable voltage threshold is programmed by SYSLEV[3:0], as shown in Table 6. SYSLEV[ ] is set to 3.0V by default. There is a 200mV rising hysteresis on SYSLEV[ ] threshold such that VVDDREF needs to be 3.2V(typ) or higher in order to power up the IC. The nSYSSTAT[-] bit reflects the output of an internal voltage comparator that monitors VVDDREF relative to the SYSLEV[-] voltage threshold, the value of nSYSTAT[-] = 1 when VVDDREF is lower than the SYSLEV[-] voltage threshold, and nSYSTAT[-] = 0 when VVDDREF is higher than the SYSLEV[-] voltage threshold. Note that the SYSLEV[-] voltage threshold is defined for falling voltages, and that the comparator produces about 200mV of hysteresis at VDDREF. As a result, once VVDDREF falls below the SYSLEV threshold, its voltage must increase by more than about 200mV to clear that condition. After the IC is powered up, the ACT8896 responds in one of two ways when the voltage at VDDREF falls Thermal Shutdown The ACT8896 integrates thermal shutdown protection circuitry to prevent damage resulting from excessive thermal stress, as may be encountered under fault conditions. This circuitry disables all regulators if the ACT8896 die temperature exceeds 160°C, and prevents the regulators from being enabled until the IC temperature drops by 20°C (typ). Innovative PowerTM - 25 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. SYSLEV Falling Threshold (Hysteresis = 200mV) 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 STEP-DOWN DC/DC REGULATORS General Description The ACT8896 features three synchronous, fixedfrequency, current-mode PWM step down converters that achieve peak efficiencies of up to 97%. REG1 and REG3 are capable of supplying up to 900mA of output current, while REG2 supports up to 700mA. These regulators operate with a fixed frequency of 2MHz, minimizing noise in sensitive applications and allowing the use of small external components. 100% Duty Cycle Operation Each regulator is capable of operating at up to 100% duty cycle. During 100% duty-cycle operation, the high-side power MOSFET is held on continuously, providing a direct connection from the input to the output (through the inductor), ensuring the lowest possible dropout voltage in battery powered applications. Synchronous Rectification REG1, REG2, and REG3 each feature integrated nchannel synchronous rectifiers, maximizing efficiency and minimizing the total solution size and cost by eliminating the need for external rectifiers. Soft-Start When enabled, each output voltages tracks an internal 400μs soft-start ramp, minimizing input current during startup and allowing each regulator to power up in a smooth, monotonic manner that is independent of output load conditions. Compensation Each buck regulator utilizes current-mode control and a proprietary internal compensation scheme to simultaneously simplify external component selection and optimize transient performance over its full operating range. No compensation design is required; simply follow a few simple guidelines described below when choosing external components. Input Capacitor Selection The input capacitor reduces peak currents and noise induced upon the voltage source. A 4.7μF ceramic capacitor is recommended for each regulator in most applications. Output Capacitor Selection For most applications, 22μF ceramic output capacitors are recommended for REG1 and REG3, while 15μF ceramic output capacitor is recommended for REG2. Despite the advantages of ceramic capacitors, care must be taken during the design process to ensure stable operation over the full operating voltage and temperature range. Ceramic capacitors are available in a variety of dielectrics, each of which exhibits different characteristics that can greatly affect performance over their temperature and voltage ranges. Two of the most common dielectrics are Y5V and X5R. Whereas Y5V dielectrics are inexpensive and can provide high capacitance in small packages, their capacitance varies greatly over their voltage and temperature ranges and are not recommended for DC/DC applications. X5R and X7R dielectrics are more suitable for output capacitor applications, as their characteristics are more stable over their operating ranges, and are highly recommended. Inductor Selection REG1, REG2, and REG3 utilize current-mode control and a proprietary internal compensation scheme to simultaneously simplify external component selection and optimize transient performance over their full operating range. These devices were optimized for operation with 2.2μH inductors, although inductors in the 1.5μH to 3.3μH range can be used. Choose an inductor with a low DC-resistance, and avoid inductor saturation by choosing inductors with DC ratings that exceed the maximum output current by at least 30%. Configuration Options Output Voltage Programming By default, each regulator powers up and regulates to its default output voltage. Output voltage is selectable by setting VSEL pin that when VSEL is low, output voltage is programmed by VSET1[-] bits, and when VSEL is high, output voltage is programmed by VSET2[-] bits. However, once the system is enabled, each regulator's output voltage may be independently programmed to a different value, typically in order to minimize the power consumption of the microprocessor during some operating modes. Program the output voltages via the I2C serial interface by writing to the regulator's VSET1[-] register if VSEL is low or VSET2[-] register if VSEL is high as shown in Table 7. Enable / Disable Control During normal operation, each buck may be enabled or disabled via the I2C interface by writing to that regulator's ON[ ] bit. The regulator accept rising or falling edge of ON[ ] bit as on/off signal. To enable the regulator, clear ON[ ] to 0 first then set to 1. To Innovative PowerTM - 26 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 disable the regulator, set ON[ ] to 1 first then clear it to 0. REG1, REG2, REG3 Turn-on Delay interface. If an output voltage is lower than the powerOK threshold, typically 7% below the programmed regulation voltage, that regulator's OK[ ] bit will be 0. Each of REG1, REG2 and REG3 features a programmable Turn-on Delay which help ensure a reliable qualification. This delay is programmed by DELAY[2:0], as shown in Table 7. If a DC/DC's nFLTMSK[-] bit is set to 1, the ACT8896 will interrupt the processor if that DC/DC's output voltage falls below the power-OK threshold. In this case, nIRQ will assert low and remain asserted until the OK[ ] bit has been read via I2C. Table 7: PCB Layout Considerations REGx/DELAY[ ] Turn-On Delay DELAY[2] DELAY[1] DELAY[0] TURN-ON DELAY 0 0 0 0 ms 0 0 1 2 ms 0 1 0 4 ms 0 1 1 8 ms 1 0 0 16 ms 1 0 1 32 ms 1 1 0 64 ms 1 1 1 128 ms Operating Mode By default, REG1, REG2, and REG3 each operate in fixed-frequency PWM mode at medium to heavy loads, while automatically transitioning to a proprietary power-saving mode at light loads in order to maximize standby battery life. In applications where low noise is critical, force fixed-frequency PWM operation across the entire load current range, at the expense of light-load efficiency, by setting the MODE[ ] bit to 1. OK[ ] and Output Fault Interrupt High switching frequencies and large peak currents make PC board layout an important part of step-down DC/DC converter design. A good design minimizes excessive EMI on the feedback paths and voltage gradients in the ground plane, both of which can result in instability or regulation errors. Step-down DC/DCs exhibit discontinuous input current, so the input capacitors should be placed as close as possible to the IC, and avoiding the use of via if possible. The inductor, input filter capacitor, and output filter capacitor should be connected as close together as possible, with short, direct, and wide traces. The ground nodes for each regulator's power loop should be connected at a single point in a starground configuration, and this point should be connected to the backside ground plane with multiple via. The output node for each regulator should be connected to its corresponding OUTx pin through the shortest possible route, while keeping sufficient distance from switching nodes to prevent noise injection. Finally, the exposed pad should be directly connected to the backside ground plane using multiple via to achieve low electrical and thermal resistance. Each DC/DC features a power-OK status bit that can be read by the system microprocessor via the I2C Table 8: REGx/VSET[ ] Output Voltage Setting REGx/VSET[2:0] REGx/VSET[5:3] 000 001 010 011 100 101 110 111 000 0.600 0.800 1.000 1.200 1.600 2.000 2.400 3.200 001 0.625 0.825 1.025 1.250 1.650 2.050 2.500 3.300 010 0.650 0.850 1.050 1.300 1.700 2.100 2.600 3.400 011 0.675 0.875 1.075 1.350 1.750 2.150 2.700 3.500 100 0.700 0.900 1.100 1.400 1.800 2.200 2.800 3.600 101 0.725 0.925 1.125 1.450 1.850 2.250 2.900 3.700 110 0.750 0.950 1.150 1.500 1.900 2.300 3.000 3.800 111 0.775 0.975 1.175 1.550 1.950 2.350 3.100 3.900 Innovative PowerTM - 27 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 LOW-NOISE, LOW-DROPOUT LINEAR REGULATORS General Description REG4, REG5, REG6, and REG7 are low-noise, low-dropout linear regulators (LDOs) that supply up to 150mA, 150mA, 250mA, and 250mA, respectively. Each LDO has been optimized to achieve low noise and high-PSRR, achieving more than 65dB PSRR at frequencies up to 10kHz. Output Current Limit Each LDO contains current-limit circuitry featuring a current-limit fold-back function. During normal and moderate overload conditions, the regulators can support more than their rated output currents. During extreme overload conditions, however, the current limit is reduced by approximately 30%, reducing power dissipation within the IC. Compensation The LDOs are internally compensated and require very little design effort, simply select input and output capacitors according to the guidelines below. Input Capacitor Selection Each LDO requires a small ceramic input capacitor to supply current to support fast transients at the input of the LDO. Bypassing each INL pin to GA with 1μF. High quality ceramic capacitors such as X7R and X5R dielectric types are strongly recommended. Output Capacitor Selection Each LDO requires a small ceramic output capacitor for stability. Capacitance value is 1.5μF for REG4 and REG5, 2.2μF for REG6 and REG7. For best performance, each output capacitor should be connected directly between the output and GA pins, as close to the output as possible, and with a short, direct connection. High quality ceramic capacitors such as X7R and X5R dielectric types are strongly recommended. Configuration Options Output Voltage Programming By default, each LDO powers up and regulates to its default output voltage. Once the system is enabled, each output voltage may be independently programmed to a different value by writing to the regulator's VSET[-] register via the I2C serial interface as shown in Table 8. Enable / Disable Control During normal operation, each LDO may be enabled or disabled via the I2C interface by writing to that LDO's ON[ ] bit. The regulator accept rising or falling edge of ON[ ] bit as on/off signal. To enable the regulator, clear ON[ ] to 0 first then set to 1. To disable the regulator, set ON[ ] to 1 first then clear it to 0. REG4, REG5, REG6, REG7 Turn-on Delay Each of REG4, REG5, REG6 and REG7 features a programmable Turn-on Delay which help ensure a reliable qualification. This delay is programmed by DELAY[2:0], as shown in Table 7. Output Discharge Each of the ACT8896’s LDOs features an optional output discharge function, which discharges the output to ground through a 1.5kΩ resistance when the LDO is disabled. This feature may be enabled or disabled by setting DIS[-] via; set DIS[-] to 1 to enable this function, clear DIS[-] to 0 to disable it. Low-Power Mode Each of ACT8896's LDOs features a LOWIQ[-] bit which, when set to 1, reduces the LDO's quiescent current by about 16%, saving power and extending battery lifetime. OK[ ] and Output Fault Interrupt Each LDO features a power-OK status bit that be read by the system microprocessor via interface. If an output voltage is lower than power-OK threshold, typically 11% below programmed regulation voltage, the value of regulator's OK[-] bit will be 0. If a LDO's nFLTMSK[-] bit is set to 1, the ACT8896 will interrupt the processor if that LDO's output voltage falls below the power-OK threshold. In this case, nIRQ will assert low and remain asserted until the OK[-] bit has been read via I2C. PCB Layout Considerations PCB Layout Considerations The ACT8896’s LDOs provide good DC, AC, and noise performance over a wide range of operating conditions, and are relatively insensitive to layout considerations. When designing a PCB, however, careful layout is necessary to prevent other circuitry from degrading LDO performance. A good design places input and output capacitors as close to the LDO inputs and output as possible, and utilizes a star-ground configuration for all regulators to prevent noise-coupling through ground. Output traces should be routed to avoid close proximity to noisy nodes, particularly the SW Innovative PowerTM - 28 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. can the the the that www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 nodes of the DC/DCs. REFBP is a filtered reference noise, and internally has a direct connection to the linear regulator controller. Any noise injected onto REFBP will directly affect the outputs of the linear regulators, and therefore special care should be taken to ensure that no noise is injected to the outputs via REFBP. As with the LDO output capacitors, the REFBP bypass capacitor should be placed as close to the IC as possible, with short, direct connections to the star-ground. Avoid the use of via whenever possible. Noisy nodes, such as from the DC/DCs, should be routed as far away from REFBP as possible. Innovative PowerTM - 29 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8896 Rev 1, 06-Sep-13 TQFN44-32 PACKAGE OUTLINE AND DIMENSIONS D D/ 2 SYMBOL E/ 2 E A3 MAX MIN MAX A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 A3 D2 L 0.150 0.250 0.008 0.006 0.010 4.000 TYP 0.158 TYP E 4.000 TYP 0.158 TYP D2 2.550 2.800 0.100 0.110 E2 2.550 2.800 0.100 0.110 L b 0.200 D e A1 DIMENSION IN INCHES MIN b A DIMENSION IN MILLIMETERS R 0.400 TYP 0.250 0.450 0.250 0.016 TYP 0.010 0.018 0.010 e E2 R Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. is a registered trademark of Active-Semi. Innovative PowerTM - 30 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM is a trademark of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc.