ACT8930 Rev 5, 17-Sep-13 Advanced PMU for Portable Handheld Equipment FEATURES GENERAL DESCRIPTION • Three Step-Down DC/DC Converters • Four Low-Dropout Linear Regulators • Dedicated enable pins for the voltage regulators The ACT8930 is a complete, cost effective, highlyefficient ActivePMUTM power management solution, for portable handheld equipment such as Smartphones, Mobile Internet Devices (MID), eBooks and etc. for flexible power sequencing. • Integrated ActivePathTM Charger This device features three step-down DC/DC converters and four low-noise, low-dropout linear regulators, along with a complete battery charging solution featuring the advanced ActivePathTM system-power selection function. • I C Serial Interface • Minimal External Components • Tiny 5×5mm TQFN55-40 Package 2 TM − 0.75mm Package Height − Pb-Free and RoHS Compliant The three DC/DC converters utilize a highefficiency, fixed-frequency (2MHz), current-mode PWM control architecture that requires a minimum number of external components. Two DC/DCs are capable of supplying up to 1100mA of output current, while the third supports up to 1300mA. All four low-dropout linear regulators are highperformance, low-noise regulators that supply up to 320mA each. The ACT8930 is available in a compact, Pb-Free and RoHS-compliant TQFN55-40 package. SYSTEM BLOCK DIAGRAM ActivePMU TM Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -1- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TABLE OF CONTENTS General Information ..................................................................................................................................... p. 01 Functional Block Diagram ............................................................................................................................ p. 03 Ordering Information .................................................................................................................................... p. 04 Pin Configuration ......................................................................................................................................... p. 04 Pin Descriptions ........................................................................................................................................... p. 05 Absolute Maximum Ratings ......................................................................................................................... p. 07 I2C Interface Electrical Characteristics ........................................................................................................ p. 08 Global Register Map .................................................................................................................................... p. 09 Register and Bit Descriptions ...................................................................................................................... p. 10 System Control Electrical Characteristics.................................................................................................... p. 14 Step-Down DC/DC Electrical Characteristics .............................................................................................. p. 15 Low-Noise LDO Electrical Characteristics ................................................................................................... p. 16 ActivePathTM Charger Electrical Characteristics.......................................................................................... p. 17 Typical Performance Characteristics ........................................................................................................... p. 19 System control information .......................................................................................................................... p. 26 Control Signals ................................................................................................................................. p. 26 Functional Description ................................................................................................................................. p. 27 I2C Interface ..................................................................................................................................... p. 27 Housekeeping Functions.................................................................................................................. p. 27 Step-Down DC/DC Regulators .................................................................................................................... p. 28 General Description.......................................................................................................................... p. 28 100% Duty Cycle Operation ............................................................................................................. p. 28 Synchronous Rectification ................................................................................................................ p. 28 Soft-Start .......................................................................................................................................... p. 28 Compensation .................................................................................................................................. p. 28 Configuration Options....................................................................................................................... p. 28 Output OK[ ] ..................................................................................................................................... p. 29 PCB Layout Considerations ............................................................................................................. p. 29 Low-Noise, Low-Dropout Linear Regulators................................................................................................ p. 30 General Description.......................................................................................................................... p. 30 Output Current Limit ......................................................................................................................... p. 30 Compensation .................................................................................................................................. p. 30 Configuration Options....................................................................................................................... p. 30 OUTPUT OK[ ] ................................................................................................................................. p. 30 PCB Layout Considerations ............................................................................................................. p. 30 ActivePathTM Charger .................................................................................................................................. p. 31 General Description.......................................................................................................................... p. 31 ActivePath Architecture .................................................................................................................... p. 31 System Configuration Optimization .................................................................................................. p. 31 Input Protection ................................................................................................................................ p. 31 Battery Management ........................................................................................................................ p. 31 Charge Current Programming .......................................................................................................... p. 32 Charge-Control State Machine ......................................................................................................... p. 32 Thermal Regulation .......................................................................................................................... p. 34 Charge Safety Timers ...................................................................................................................... p. 34 Charge Status Indicator.................................................................................................................... p. 35 Reverse-Current Protection ............................................................................................................. p. 35 Battery Temperature Monitoring ...................................................................................................... p. 35 TQFN55-40 Package Outline and Dimensions ........................................................................................... p. 36 Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -2- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 FUNCTIONAL BLOCK DIAGRAM (Optional) AC Adaptor BODY SWITCH ACT8930 4.35V to 6V CHGIN VSYS System Supply BAT Li+ Battery USB ACIN BODY SWITCH ActivePath Control VSYS nSTAT + 102µA CURRENT SENSE CHARGE STATUS TH VOLTAGE SENSE Charge Control CHGLEV PRECONDITION 2.85V VP1 ISET THERMAL REGULATION To VSYS 110°C SW1 OUT1 OUT1 OUT1 nRSTO GP12 VP2 ON1 SW2 ON2 OUT2 ON3 GP12 To VSYS OUT2 ON45 VP3 ON6 SW3 To VSYS OUT3 ON7 OUT3 System Control GP3 SCL INL SDA REG4 LDO BAT LBI 1.2V OUT1 REG5 LDO + REG6 LDO nLBO REG7 LDO REFBP To VSYS OUT4 OUT4 OUT5 OUT5 OUT6 OUT6 OUT7 OUT7 Reference GA Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. EP -3- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 ORDERING INFORMATIONcd PART NUMBER VOUT1 VOUT2 VOUT3 VOUT4 VOUT5 VOUT6 VOUT7 PACKAGE PINS TEMPERATURE RANGE ACT8930QJ133-T 3.3V 1.3V 1.3V 1.2V 1.2V 1.2V 3.3V TQFN55-40 40 -40°C to +85°C ACT8930QJ134-T 1.35V 3.3V 1.8V 3.3V 1.8V 3.3V 3.3V TQFN55-40 40 -40°C to +85°C ACT8930QJ135-T 1.8V 1.2 1.2V 1.2V 3.3V 3.3V 1.8V TQFN55-40 40 -40°C to +85°C c: All Active-Semi components are RoHS Compliant and with Pb-free plating unless otherwise specified. d: Standard product options are listed in this table. Contact factory for custom options. Minimum order quantity is 12,000 units. PIN CONFIGURATION VSYS CHGIN VSYS OUT2 VP2 SW2 GP12 SW1 VP1 NC TOP VIEW REFBP BAT OUT1 BAT GA nSTAT OUT4 SDA ACTIVE AA33 DATE CODE OUT5 INL OUT7 SCL ON2 TH ISET OUT6 ON6 CHGLEV EP ACIN LBI nLBO ON3 OUT3 VP3 SW3 GP3 ON1 ON45 nRSTO ON7 Thin - QFN (TQFN55-40) Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -4- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 PIN DESCRIPTIONS PIN NAME DESCRIPTION 1 REFBP 2 OUT1 3 GA 4 OUT4 REG4 output. Capable of delivering up to 320mA of output current. Connect a 3.3µF ceramic capacitor from OUT4 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 5 OUT5 REG5 output. Capable of delivering up to 320mA of output current. Connect a 3.3µF ceramic capacitor from OUT5 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 6 INL 7 OUT7 REG7 output. Capable of delivering up to 320mA of output current. Connect a 3.3µF ceramic capacitor from OUT7 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 8 OUT6 REG6 output. Capable of delivering up to 320mA of output current. Connect a 3.3µF ceramic capacitor from OUT6 to GA. The output is discharged to GA with 1.5kΩ resistor when disabled. 9 ON6 Enable Input for REG6. Drive to VP1 or a logic high to enable REG6. Drive to GA to disable. 10 ON7 Enable Input for REG7. Drive to VP1 or a logic high to enable REG7. Drive to GA to disable. 11 nRSTO 12 ON45 Enable Input for REG4 and REG5. Drive to VP1 or a logic high to enable REG4 and REG5. Drive to GA to disable. 13 ON1 Enable Input for REG1. Drive to VP1 or a logic high to enable REG1. Drive to GA to disable. 14 GP3 Power Ground for REG3. Connect GA, GP12, and GP3 together at a single point as close to the IC as possible. 15 SW3 Switching Node Output for REG3. 16 VP3 Power Input for REG3. Bypass to GP3 with a high quality ceramic capacitor placed as close to the IC as possible. 17 OUT3 18 ON3 Enable Input for REG3. Drive to VP1 or a logic high to enable REG3. Drive to GA to disable. 19 nLBO Low Battery Indicator Output. nLBO is asserted low whenever the voltage at LBI is lower than 1.2V, and is high-Z otherwise. See the Precision Voltage Detector section for more information. 20 LBI 21 ACIN 22 CHGLEV Reference Bypass. Connect a 0.047μF ceramic capacitor from REFBP to GA. This pin is discharged to GA in shutdown. Output Feedback Sense for REG1. Analog Ground. Connect GA directly to a quiet ground node. Connect GA, GP12 and GP3 together at a single point as close to the IC as possible. Power Input for REG4, REG5, REG6, and REG7. Bypass to GA with a high quality ceramic capacitor placed as close to the IC as possible. Active Low Reset Output. See the nRSTO Output section for more information. Output Feedback Sense for REG3. Low Battery Input. The input voltage is compared to 1.2V and the output of this comparison drives nLBO. See the Precision Voltage Detector section for more information. AC Input Supply Detection. See the Charge Current Programming section for more information. Charge Current Selection Input. See the Charge Current Programming section for more information. Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -5- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 PIN DESCRIPTIONS CONT’D PIN NAME DESCRIPTION 23 ISET 24 TH 25 ON2 Enable Input for REG2. Drive to VP1 or a logic high to enable REG2. Drive to GA to disable. 26 SCL Clock Input for I2C Serial Interface. 27 SDA Data Input for I2C Serial Interface. Data is read on the rising edge of SCL. 28 nSTAT 29, 30 BAT 31, 32 VSYS System Output Pin. Bypass to GA with a 10µF or larger ceramic capacitor. 33 CHGIN Power Input for the Battery Charger. Bypass CHGIN to GA with a capacitor placed as close to the IC as possible. The battery charger is automatically enabled when a valid voltage is present on CHGIN . 34 OUT2 Output Feedback Sense for REG2. 35 VP2 Power Input for REG2. Bypass to GP12 with a high quality ceramic capacitor placed as close to the IC as possible. 36 SW2 Switching Node Output for REG2. 37 GP12 Power Ground for REG1 and REG2. Connect GA, GP12 and GP3 together at a single point as close to the IC as possible. 38 SW1 Switching Node Output for REG1. 39 VP1 Power Input for REG1. Bypass to GP12 with a high quality ceramic capacitor placed as close to the IC as possible. 40 NC No Connect. Not internally connected. EP EP Exposed Pad. Must be soldered to ground on PCB. Charge Current Set. Program the charge current by connecting a resistor (RISET) between ISET and GA. See the Charge Current Programming section for more information. Temperature Sensing Input. Connect to battery thermistor. TH is pulled up with a 102µA (typ) current internally. See the Battery Temperature Monitoring section for more information. Active-Low Open-Drain Charger Status Output. nSTAT has a 8mA (typ) current limit, allowing it to directly drive an indicator LED without additional external components. See the Charge Status Indicator section for more information. Battery Charger Output. Connect this pin directly to the battery anode (+ terminal) Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -6- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 ABSOLUTE MAXIMUM RATINGSc PARAMETER VALUE UNIT VP1, VP2 to GP12 VP3 to GP3 -0.3 to +6 V BAT, VSYS, INL to GA -0.3 to +6 V CHGIN to GA -0.3 to +14 V SW1, OUT1 to GP12 -0.3 to (VVP1 + 0.3) V SW2, OUT2 to GP12 -0.3 to (VVP2 + 0.3) V SW3, OUT3 to GP3 -0.3 to (VVP3 + 0.3) V -0.3 to +6 V ON45, ON1, ON6, ACIN, CHGLEV, ISET, LBI, ON7, ON3, REFBP, SCL, SDA, TH, ON2 to GA -0.3 to (VSYS+0.3) V OUT4, OUT5, OUT6, OUT7 to GA -0.3 to (VINL + 0.3) V -0.3 to +0.3 V Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C Maximum Power Dissipation TQFN55-40 (Thermal Resistance θJA = 30oC/W) 2.7 W -65 to 150 °C 300 °C nLBO, nRSTO, nSTAT to GA GP12, GP3 to GA Storage Temperature Lead Temperature (Soldering, 10 sec) c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -7- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 I2C INTERFACE ELECTRICAL CHARACTERISTICS (VVSYS = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN SCL, SDA Input Low VVSYS = 3.1V to 5.5V, TA = -40ºC to 85ºC SCL, SDA Input High VVSYS = 3.1V to 5.5V, TA = -40ºC to 85ºC TYP UNIT 0.35 V 1.55 V SDA Leakage Current SCL Leakage Current 8 SDA Output Low MAX IOL = 5mA 1 µA 18 µA 0.35 V SCL Clock Period, tSCL 1.5 µs SDA Data Setup Time, tSU 100 ns SDA Data Hold Time, tHD 300 ns Start Setup Time, tST For Start Condition 100 ns Stop Setup Time, tSP For Stop Condition 100 ns Figure 1: I2C Compatible Serial Bus Timing tSCL SCL tST tHD tSU tSP SDA Start condition Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. Stop condition -8- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 GLOBAL REGISTER MAP BITS OUTPUT ADDRESS SYS SYS 0x00 0x01 REG1 0x20 REG1 0x22 REG2 REG2 REG3 REG3 REG4 REG4 REG5 REG5 REG6 REG6 REG7 REG7 APCH APCH APCH APCH 0x30 0x32 0x40 0x42 0x50 0x51 0x54 0x55 0x60 0x61 0x64 0x65 0x70 0x71 0x78 0x7A NAME D7 D6 D5 D4 D3 TRST nSYSMODE Reserved nSYSSTAT SYSLEV[3] D2 D1 D0 SYSLEV[2] SYSLEV[1] SYSLEV[0] DEFAULTc 0 1 0 R 0 1 NAME Reserved Reserved Reserved Reserved SCRATCH SCRATCH 1 1 SCRATCH SCRATCH DEFAULTc 0 0 0 0 0 0 0 0 NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 1 1 1 0 0 1 OK NAME ON PHASE MODE Reserved Reserved Reserved Reserved DEFAULTc 0 0 0 0 1 1 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 0 1 1 0 1 0 NAME ON PHASE MODE Reserved Reserved Reserved Reserved OK DEFAULTc 0 0 0 0 1 1 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 0 1 1 0 1 0 NAME ON Reserved MODE Reserved Reserved Reserved Reserved OK DEFAULTc 0 0 0 0 0 0 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 0 1 1 0 0 0 NAME ON DIS LOWIQ Reserved Reserved Reserved Reserved OK DEFAULTc 0 1 0 0 0 0 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 0 1 1 0 0 0 NAME ON DIS LOWIQ Reserved Reserved Reserved Reserved OK DEFAULTc 0 1 0 0 0 0 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 0 1 1 0 0 0 NAME ON DIS LOWIQ Reserved Reserved Reserved Reserved OK DEFAULTc 0 1 0 0 0 0 0 R NAME Reserved Reserved VSET[5] VSET[4] VSET[3] VSET[2] VSET[1] VSET[0] DEFAULTc 0 0 1 1 1 0 0 1 NAME ON DIS LOWIQ Reserved Reserved Reserved Reserved OK DEFAULTc 0 1 0 0 0 0 0 R NAME Reserved Reserved Reserved Reserved Reserved Reserved Reserved Reserved 0 1 0 0 0 0 DEFAULTc 0 1 NAME SUSCHG Reserved TOTTIMO[1] TOTTIMO[0] PRETIMO[1] PRETIMO[0] OVPSET[1] OVPSET[0] DEFAULTc 0 0 1 0 1 0 0 0 NAME Reserved Reserved Reserved Reserved TIMRDAT TEMPDAT INDAT CHGDAT 0 0 DEFAULTc 0 0 NAME Reserved Reserved DEFAULTc 0 0 CSTATE[0] CSTATE[1] R R R R R R Reserved Reserved ACINSTAT Reserved R R R R c: Default values of ACT8930QJ133-T. 2: All bits are automatically cleared to default values when the input power is removed or falls below the system UVLO. Innovative PowerTM Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. -9- www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 REGISTER AND BIT DESCRIPTIONS Table 1: Global Register Map OUTPUT ADDRESS BIT NAME ACCESS DESCRIPTION SYS 0x00 [7] TRST R/W Reset Timer Setting. Defines the reset time-out threshold. Reset time-out is 65ms when value is 1, reset time-out is 260ms when value is 0. See nRSTO Output section for more information. SYS 0x00 [6] nSYSMODE R/W SYSLEV Mode Select. Defines the response to the SYSLEV voltage detector, 1: Do nothing, 0: automatic shutdown when VVSYS falls below the programmed SYSLEV threshold. SYS 0x00 [5] - R Reserved. SYS 0x00 [4] nSYSSTAT R System Voltage Status. Value is 1 when VVSYS is lower than the SYSLEV voltage threshold, value is 0 when VVSYS is higher than the system voltage detection threshold. SYS 0x00 [3:0] SYSLEV R/W System Voltage Detect Threshold. Defines the SYSLEV voltage threshold. See the Programmable System Voltage Monitor section for more information. SYS 0x01 [7:4] - R/W Reserved. SYS 0x01 [3:0] SCRATCH R/W Scratchpad Bits. Non-functional bits, maybe be used by user to store system status information. Volatile bits, which are cleared when system voltage falls below UVLO threshold. REG1 0x20 [7:6] - R REG1 0x20 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG1 0x22 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG1 0x22 [6] PHASE R/W Regulator Phase Control. Set bit to 1 for the regulator to operate 180° out of phase with the oscillator, clear bit to 0 for the regulator to operate in phase with the oscillator. REG1 0x22 [5] MODE R/W Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transit to power-savings mode under light-load conditions. REG1 0x22 [4:1] - R Reserved. Reserved. REG1 0x22 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG2 0x30 [7:6] - R Reserved. REG2 0x30 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG2 0x32 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG2 0x32 [6] PHASE R/W Regulator Phase Control. Set bit to 1 for the regulator to operate 180° out of phase with the oscillator, clear bit to 0 for the regulator to operate in phase with the oscillator. Innovative PowerTM - 10 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 REGISTER AND BIT DESCRIPTIONS CONT’D OUTPUT ADDRESS BIT NAME ACCESS DESCRIPTION Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transit to powersavings mode under light-load conditions. REG2 0x32 [5] MODE R/W REG2 0x32 [4:1] - R Reserved. REG2 0x32 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG3 0x40 [7:6] - R Reserved. REG3 0x40 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG3 0x42 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG3 0x42 [6] - R REG3 0x42 [5] MODE R/W REG3 0x42 [4:1] - R Reserved. REG3 0x42 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG4 0x50 [7:6] - R Reserved. Regulator Mode Select. Set bit to 1 for fixed-frequency PWM under all load conditions, clear bit to 0 to transit to powersavings mode under light-load conditions. Reserved. REG4 0x50 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG4 0x51 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG4 0x51 [6] DIS R/W Output Discharge Control. When activated, LDO output is discharged to GA through 1.5kΩ resistor when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG4 0x51 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG4 0x51 [4:1] - R Reserved. REG4 0x51 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG5 0x54 [7:6] - R Reserved. REG5 0x54 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG5 0x55 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG5 0x55 [6] DIS R/W Output Discharge Control. When activated, LDO output is discharged to GA through 1.5kΩ resistor when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG5 0x55 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG5 0x55 [4:1] - R Reserved. REG5 0x55 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. Innovative PowerTM - 11 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 REGISTER AND BIT DESCRIPTIONS CONT’D OUTPUT ADDRESS BIT NAME ACCESS REG6 0x60 [7:6] - R DESCRIPTION Reserved. REG6 0x60 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG6 0x61 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG6 0x61 [6] DIS R/W Output Discharge Control. When activated, LDO output is discharged to GA through 1.5kΩ resistor when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG6 0x61 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG6 0x61 [4:1] - R Reserved. REG6 0x61 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. REG7 0x64 [7:6] - R Reserved. REG7 0x64 [5:0] VSET R/W Output Voltage Selection. See the Output Voltage Programming section for more information. REG7 0x65 [7] ON R/W Regulator Enable Bit. Set bit to 1 to enable the regulator, clear bit to 0 to disable the regulator. REG7 0x65 [6] DIS R/W Output Discharge Control. When activated, LDO output is discharged to GA through 1.5kΩ resistor when in shutdown. Set bit to 1 to enable output voltage discharge in shutdown, clear bit to 0 to disable this function. REG7 0x65 [5] LOWIQ R/W LDO Low-IQ Mode Control. Set bit to 1 for low-power operating mode, clear bit to 0 for normal mode. REG7 0x65 [4:1] - R Reserved. REG7 0x65 [0] OK R Regulator Power-OK Status. Value is 1 when output voltage exceeds the power-OK threshold, value is 0 otherwise. APCH 0x70 [7:0] - R/W Reserved. APCH 0x71 [7] SUSCHG R/W Charge Suspend Control Input. Set bit to 1 to suspend charging, clear bit to 0 to allow charging to resume. APCH 0x71 [6] - R/W Reserved. APCH 0x71 [5:4] TOTTIMO R/W Total Charge Time-out Selection. See the Charge Safety Timers section for more information. APCH 0x71 [3:2] PRETIMO R/W Precondition Charge Time-out Selection. See the Charge Safety Timers section for more information. APCH 0x71 [1:0] OVPSET R/W Input Over-Voltage Protection Threshold Selection. See the Input Over-Voltage Protection section for more information. APCH 0x78 [7:4] - R Reserved. APCH 0x78 [3] TIMRDAT1 R Charge Timer Status. Value is 1 when precondition time-out or total charge time-out occurs. Value is 0 in other case. APCH 0x78 [2] TEMPDAT1 R Temperature Status. Value is 0 when battery temperature is outside of valid range. Value is 1 when battery temperature is inside of valid range. c: Valid only when CHGIN UVLO Threshold<VCHGIN<CHGIN OVP Threshold. Innovative PowerTM - 12 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 REGISTER AND BIT DESCRIPTIONS CONT’D OUTPUT ADDRESS BIT NAME ACCESS DESCRIPTION APCH 0x78 [1] INDAT R Input Voltage Status. Value is 1 when a valid input at CHGIN is present. Value is 0 when a valid input at CHGIN is not present. APCH 0x78 [0] CHGDAT1 R Charge State Machine Status. Value is 1 indicates the charger state machine is in EOC state, value is 0 indicates the charger state machine is in other states. APCH 0x7A [7:6] - R Reserved. APCH 0x7A [5:4] CSTATE R Charge State. Values indicate the current charging state. See the State Machine Status section for more information. APCH 0x7A [3:2] - R Reserved. APCH 0x7A [1] ACINSTAT R ACIN Status. Indicates the state of the ACIN input, typically in order to identify the type of input supply connected. Value is 1 when ACIN is above the 1.2V precision threshold, value is 0 when ACIN is below this threshold. APCH 0x7A [0] - R Reserved. Innovative PowerTM - 13 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 SYSTEM CONTROL ELECTRICAL CHARACTERISTICS (VVSYS = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS Input Voltage Range MIN TYP 2.7 MAX UNIT 5.5 V 2.65 V UVLO Threshold Voltage VVSYS Rising UVLO Hysteresis VVSYS Falling 200 mV Supply Current All Regulators Enabled 420 µA Shutdown Supply Current All Regulators Disabled 8 18 µA 2 2.2 MHz 2.2 Oscillator Frequency 1.8 Logic High Input Voltage1 1.4 2.45 V Logic Low Input Voltage Leakage Current VnRSTO = 4.2V LBI Threshold Voltage VBAT Falling VBAT Rising LBI Hysteresis Threshold Low Level Output Voltage 2 1.2 Temperature rising Thermal Shutdown Hysteresis V 1 µA 1.31 V 200 ISINK = 5mA nRSTO Delay Thermal Shutdown Temperature 1.03 0.4 mV 0.35 V 260e ms 160 °C 20 °C c: ON1, ON3, ON3, ON45, ON6, ON7 are logic inputs. 2: nLBO, nRSTO are open drain outputs. 3: Typical value shown. Actual value may vary from 227.9ms to 291.2ms. Innovative PowerTM - 14 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 STEP-DOWN DC/DC ELECTRICAL CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER CONDITIONS Operating Voltage Range MIN TYP 2.7 UVLO Threshold Input Voltage Rising UVLO Hysteresis Input Voltage Falling 100 Standby Supply Current Regulator Enabled 65 Shutdown Current VVP = 5.5V, Regulator Disabled 0 Output Voltage Accuracy 2.5 VOUT ≥ 1.2V, IOUT = 10mA VOUT < 1.2V, IOUT = 10mA Line Regulation VVP = Max (VNOM1 +1, 3.2V) to 5.5V Load Regulation IOUT = 10mA to IMAX -1% -2% 2 2.6 MAX UNIT 5.5 V 2.7 V mV 90 µA 1 µA VNOM c 1% VNOM c 2% V 0.15 %/V 0.0017 %/mA Power Good Threshold VOUT Rising 93 %VNOM Power Good Hysteresis VOUT Falling 2 %VNOM Oscillator Frequency VOUT ≥ 20% of VNOM 1.8 VOUT = 0V 2 2.2 MHz 500 kHz Soft-Start Period 400 µs Minimum On-Time 75 ns REG1 Maximum Output Current 1.1 Current Limit 1.55 A 1.8 2.05 A PMOS On-Resistance ISW1 = -100mA 0.16 Ω NMOS On-Resistance ISW1 = 100mA 0.16 Ω SW1 Leakage Current VVP1 = 5.5V, VSW1 = 0 or 5.5V 0 1 µA REG2 Maximum Output Current 1.1 Current Limit 1.55 PMOS On-Resistance A 1.8 ISW2 = -100mA 0.16 NMOS On-Resistance ISW2 = 100mA 0.16 SW2 Leakage Current VVP2 = 5.5V, VSW2 = 0 or 5.5V 0 2.05 A Ω Ω 1 µA REG3 Maximum Output Current 1.3 Current Limit 1.8 A 2.1 2.5 A PMOS On-Resistance ISW3 = -100mA 0.16 Ω NMOS On-Resistance ISW3 = 100mA 0.16 Ω SW3 Leakage Current VVP3 = 5.5V, VSW3 = 0 or 5.5V 0 1 µA c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section. 2: IMAX Maximum Output Current. Innovative PowerTM - 15 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 LOW-NOISE LDO ELECTRICAL CHARACTERISTICS (VINL = 3.6V, COUT4 = COUT5 = COUT6 = COUT7 = 3.3µF, LOWIQ[ ] = [0], TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS Operating Voltage Range Output Voltage Accuracy Line Regulation Load Regulation Power Supply Rejection Ratio Supply Current per Output MIN MAX UNIT 5.5 V c 2% 4% VOUT ≥ 1.2V, TA = 25°C, IOUT = 10mA -1% VNOM VOUT < 1.2V, TA = 25°C, IOUT = 10mA -2% VNOMc VINL = Max (VOUT + 0.5V, 3.6V) to 5.5V, LOWIQ[ ] = [0] 0.05 VINL = Max (VOUT + 0.5V, 3.6V) to 5.5V LOWIQ[ ] = [1] 0.5 IOUT = 1mA to IMAX2 0.08 V mV/V f = 1kHz, IOUT = 20mA, VOUT =1.2V 75 f = 10kHz, IOUT = 20mA, VOUT =1.2V 65 V/A dB Regulator Enabled, LOWIQ[ ] = [0] 37 60 Regulator Enabled, LOWIQ[ ] = [1] 31 52 0 1 Regulator Disabled Soft-Start Period TYP 2.5 µA VOUT = 2.9V 140 µs Power Good Threshold VOUT Rising 89 % Power Good Hysteresis VOUT Falling 3 % Output Noise IOUT = 20mA, f = 10Hz to 100kHz, VOUT = 1.2V 50 µVRMS Discharge Resistance LDO Disabled, DIS[ ] = 1 1.5 kΩ IOUT = 160mA, VOUT > 3.1V 90 REG4 Dropout Voltagee Maximum Output Current Current Limitf VOUT = 95% of regulation voltage Stable COUT4 Range 180 mV 320 mA 370 mA 3.3 20 µF 280 mV REG5 Dropout Voltage IOUT = 160mA, VOUT > 3.1V Maximum Output Current Current Limit VOUT = 95% of regulation voltage Stable COUT5 Range 140 320 mA 370 mA 3.3 20 µF 180 mV REG6 Dropout Voltage IOUT = 160mA, VOUT > 3.1V Maximum Output Current Current Limit VOUT = 95% of regulation voltage Stable COUT6 Range 90 320 mA 370 mA 3.3 20 µF 280 mV REG7 Dropout Voltage IOUT = 160mA, VOUT > 3.1V Maximum Output Current Current Limit 140 320 VOUT = 95% of regulation voltage Stable COUT7 Range mA 370 mA 3.3 20 µF c: VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section. 2: IMAX Maximum Output Current. 3: Dropout Voltage is defined as the differential voltage between input and output when the output voltage drops 100mV below the regulation voltage (for 3.1V output voltage or higher). f: LDO current limit is defined as the output current at which the output voltage drops to 95% of the respective regulation voltage. Under heavy overload conditions the output current limit folds back by 30% (typ) Innovative PowerTM - 16 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 ActivePathTM CHARGER ELECTRICAL CHARACTERISTICS (VCHGIN = 5.0V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT 6.0 V 3.9 V ActivePath CHGIN Operating Voltage Range 4.35 CHGIN UVLO Threshold CHGIN Voltage Rising CHGIN UVLO Hysteresis CHGIN Voltage Falling CHGIN OVP Threshold CHGIN Voltage Rising CHGIN OVP Hysteresis CHGIN Voltage Falling 0.4 VCHGIN < VUVLO 35 70 µA VCHGIN < VBAT + 50mV, VCHGIN > VUVLO 100 200 µA VCHGIN > VBAT + 150mV, VCHGIN > VUVLO Charger disabled, IVSYS = 0mA 1.3 2.0 mA IVSYS = 100mA 0.3 Ω A CHGIN Supply Current CHGIN to VSYS On-Resistance CHGIN to VSYS Current Limit 3.1 3.5 0.5 6.0 6.6 V 7.2 V V ACIN = VSYS 1.5 2 ACIN = GA, CHGLEV = GA 80 90 100 ACIN = GA, CHGLEV = VSYS 400 450 500 IVSYS = 10mA 4.45 4.6 4.8 V 4 8 12 mA 1 µA mA VSYS REGULATION VSYS Regulated Voltage nSTAT OUTPUT nSTAT Sink current VnSTAT = 2V nSTAT Leakage Current VnSTAT = 4.2V ACIN AND CHGLEV INPUTS CHGLEV Logic High Input Voltage 1.4 V CHGLEV Logic Low Input Voltage CHGLEV Leakage Current VCHGLEV = 4.2V ACIN Voltage Thresholds ACIN voltage rising ACIN Hysteresis voltage threshold ACIN voltage falling ACIN Leakage Current VACIN = 4.2V 1.03 1.2 0.4 V 1 µA 1.31 V 200 mV 1 µA TH INPUT TH Pull-Up Current VCHGIN > VBAT + 100mV, Hysteresis = 50mV 91 102 110 µA VTH Upper Temperature Voltage Threshold (VTHH) Hot Detect NTC Thermistor 2.44 2.51 2.58 V VTH Lower Temperature Voltage Threshold (VTHL) Cold Detect NTC Thermistor 0.47 0.50 0.53 V VTH Hysteresis Upper and Lower Thresholds Innovative PowerTM - 17 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. 30 mV www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 ActivePathTM CHARGER ELECTRICAL CHARACTERISTICS CONT’D (VCHGIN = 5.0V, TA = 25°C, unless otherwise specified.) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT CHARGER BAT Reverse Leakage Current VCHGIN = 0V, VBAT = 4.2V, IVSYS = 0mA BAT to VSYS On-Resistance ISET Pin Voltage Charge Termination Voltage Charge Current Precondition Charge Current µA 70 mΩ Fast Charge 1.2 Precondition 0.13 V TA = -20°C to 70°C 4.179 4.2 4.221 TA = -40°C to 85°C 4.170 4.2 4.230 ACIN = VSYS, CHGLEV = VSYS -10% ICHG1 +10% ACIN = VSYS, CHGLEV = GA -10% ICHG/5 +10% ACIN = GA, CHGLEV = VSYS 400 450 500 ACIN = GA, CHGLEV = GA 80 90 100 VBAT = 3.8V, RISET = 6.8k VBAT = 2.7V, RISET = 6.8k ACIN = VSYS, CHGLEV = VSYS 10% ICHG ACIN = VSYS, CHGLEV = GA 10% ICHG ACIN = GA, CHGLEV = VSYS 45 ACIN = GA, CHGLEV = GA 45 Precondition Threshold Voltage VBAT Voltage Rising Precondition Threshold Hysteresis VBAT Voltage Falling END-OF-CHARGE Current Threshold 8 VBAT = 4.15V 2.75 2.85 10% ICHG ACIN = VSYS, CHGLEV = GA 10% ICHG ACIN = GA, CHGLEV = VSYS 45 ACIN = GA, CHGLEV = GA 45 mA mA 3.0 150 ACIN = VSYS, CHGLEV = VSYS V V mV mA Charge Restart Threshold VVSYS - VBAT, VBAT Falling Precondition Safety Timer PRETIMO[ ] = 10 80 min Total Safety Timer TOTTIMO[ ] = 10 5 hr 100 °C Thermal Regulation Threshold 190 205 220 mV c: RISET (kΩ) = 2336 × (1V/ICHG (mA)) - 0.205 Innovative PowerTM - 18 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS (VVSYS = 3.6V, TA = 25°C, unless otherwise specified.) Frequency vs. Temperature VREF vs. Temperature 0 -0.42 2 Frequency (%) VREF (%) 0.42 2.5 -20 0 20 40 60 80 100 1.5 1 0.5 0 -0.5 Typical VREF=1.2V -0.84 -40 ACT8930-002 ACT8930-001 0.84 Typical Oscillator Frequency=2MHz -1 -40 120 -20 0 20 40 Temperature (°C) Temperature (°C) ON1 Startup Sequence ON2 Startup Sequence 60 ACT8930-004 ACT8930-003 CH1 80 85 CH1 CH2 CH2 CH3 CH1: ON2, 2V/div CH2: VOUT2, 500mV/div TIME: 400µs/div CH1: ON1, 2V/div CH2: VOUT1, 2V/div CH3: VnRSTO, 2V/div TIME: 40ms/div ON3 Startup Sequence ON4, 5 Startup Sequence ACT8930-006 ACT8930-005 CH1 CH1 CH2 CH2 CH3 CH1: ON3, 2V/div CH2: VOUT3, 500mV/div TIME: 400µs/div Innovative PowerTM - 19 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. CH1: ON4, 5, 2V/div CH2: VOUT4, 500mV/div CH3: VOUT5, 500mV/div TIME: 100µs//div www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) ON6 startup sequence ON7 startup sequence ACT8930-008 ACT8930-007 CH1 CH1 CH2 CH2 CH1: ON6, 2V/div CH2: VOUT6, 500mV/div TIME: 100µs/div CH1: ON7, 2V/div CH2: VOUT7, 1V/div TIME: 100µs/div REG1 Efficiency vs. Output Current VIN = 4.2V 60 VOUT = 1.3V VIN = 3.6V 80 Efficiency (%) VIN = 3.6V VIN=5.0V 100 40 ACT8930-010 VOUT = 3.3V 80 Efficiency (%) REG2 Efficiency vs. Output Current ACT8930-009 100 VIN=5.0V VIN = 4.2V 60 40 20 20 0 0 1 10 100 10 1 1000 100 1000 Output Current (mA) Output Current (mA) REG3 Efficiency vs. Output Current VOUT = 1.3V VIN = 3.6V Efficiency (%) 80 ACT8930-011 100 VIN=5.0V VIN = 4.2V 60 40 20 0 1 10 100 1000 Output Current (mA) Innovative PowerTM - 20 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) REG1 Output Voltage vs. Temperature 3.298 3.294 3.290 -40 -20 0 20 40 60 80 100 VOUT2 = 1.3V ILOAD = 100mA 1.306 Output Voltage (V) 3.302 1.310 1.302 1.298 1.294 1.290 -40 120 -20 0 40 60 80 100 120 REG1, 2, 3 MOSFET Resistance REG3 Output Voltage vs. Temperature 1.298 ILOAD = 100mA 300 250 RDSON (mΩ) 1.302 ACT8930-015 350 ACT8930-014 VOUT3 = 1.3V ILOAD = 100mA 1.306 Output Voltage (V) 20 Temperature (°C) Temperature (°C) 1.310 ACT8930-013 VOUT1 = 3.3V ILOAD = 100mA 3.306 Output Voltage (V) REG2 Output Voltage vs. Temperature ACT8930-012 3.310 200 PMOS NMOS 150 100 1.294 50 1.290 -40 0 -20 0 20 40 60 80 100 120 Temperature (°C) Innovative PowerTM - 21 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. 3.0 3.5 4.0 4.5 5.0 5.5 Input Voltage (V) www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) REG4, 5, 6 Output Voltage vs. Output Current 1.24 REG4, REG5, REG6 1.2 1.16 1.12 1.08 3.58 Output Voltage (V) Output Voltage (V) 1.28 REG7 Output Voltage vs. Output Current 3.66 ACT8930-017 ACT8930-016 1.32 3.5 3.42 REG7 3.34 3.26 3.18 3.1 1.04 3.02 1 0 50 100 150 200 250 300 0 400 50 Dropout Voltage vs. Output Current 100 50 VIN = 3.3V 200 250 300 400 300 250 REG5, REG7 200 150 100 50 0 150 300 350 Dropout Voltage (mV) Dropout Voltage (mV) REG4, REG6 100 250 350 400 Output Current (mA) Innovative PowerTM - 22 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. ACT8930-019 ACT89930-018 200 50 200 Dropout Voltage vs. Output Current 250 0 150 Output Current (mA) Output Current (mA) 150 100 0 VIN = 3.3V 0 50 100 150 200 250 300 350 400 Output Current (mA) www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) Output Voltage vs. Temperature Region of Stable COUT ESR vs. Output Current 2.50 ESR (Ω) Output Voltage (V) 3.00 2.00 REG4, REG5, REG6 1.50 ACT8930-021 REG7 3.50 1 ACT8930-020 4.00 0.1 Stable ESR 1.00 0.50 0.01 0 -40 -20 0 20 40 60 80 100 120 0 50 100 150 200 250 Output Current (mA) Temperature (°C) LDO Output Voltage Noise ACT8930-022 CH1 CH1: VOUTx, 200µV/div (AC COUPLED) TIME: 200ms/div Innovative PowerTM - 23 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) VSYS Voltage vs. CHGIN Voltage VSYS Voltage vs. VSYS Current 4.0 ACIN/CHGLEV = 01 ACIN/CHGLEV = 11 3.0 2.0 5.0 VSYS Voltage (V) VSYS Voltage (V) 5.0 5.2 ACT8930-024 ACT8930-023 6.0 4.8 VSYS = 4.6V 4.6 4.4 4.2 1.0 4.0 0 0 500 1000 1500 2000 2 0 2500 4 70 60 50 40 30 VCHGIN = 5V ACIN = 0 CHGLEV = 0 90mA USB 0 0.0 Charger Current (mA) 1.5 2.0 2.5 3.0 3.5 4.0 350 300 250 200 150 VBAT Falling VBAT Rising 100 0 0.0 4.5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Battery Voltage (V) Battery Voltage (V) Charger Current vs. Battery Voltage DCCC and Battery Supplement Modes RISET = 2.4kΩ VCHGIN = 5V ACIN/CHGLEV = 11 800 4.5 ACT8930-028 1000 1.0 CHGLEV = 1 400 450mA USB 50 ACT8930-027 1200 0.5 VCHGIN = 5V 450 ACIN = 0 Charger Current (mA) Charger Current (mA) 80 500 ACT8930-026 ACT8930-025 90 VBAT Falling VBAT Rising 10 Charger Current vs. Battery Voltage Charger Current vs. Battery Voltage 100 10 8 CHGIN Voltage (V) VSYS Current (mA) 20 6 CH4 CH3 600 CH2 VBAT = 3.5V VVSYS = 4.6V IVSYS = 0-1.8A ICHARGE = 1000mA VCHGIN = 5.1V-3A 400 VBAT Falling VBAT Rising 200 CH1 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Battery Voltage (V) Innovative PowerTM - 24 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. CH1: IVSYS, 1.00A/div CH2: IBAT, 1.00A/div CH3: VBAT, 1.00V/div CH4: VVSYS, 1V/div TIME: 200ms/div www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TYPICAL PERFORMANCE CHARACTERISTICS CONT’D (TA = 25°C, unless otherwise specified.) VAC Applied VAC Removed CH3 ACT8930-030 ACT8930-029 CH4 CH4 CH3 CH2 CH2 CH1 CH1 CH1: IBAT, 400mA/div CH2: VBAT, 1V/div CH3: VVSYS, 2V/div CH4: VCHGIN, 5V/div TIME: 40ms/div VCHGIN = 5V VBAT = 3.5V RVSYS = 100Ω ACIN/CHGLEV = 01 CH1: IBAT, 200mA/div CH2: VVSYS, 2V/div CH3: VBAT, 1V/div CH4: VCHGIN, 5V/div TIME: 100ms/div VAC Applied VAC Removed CH3 ACT8930-032 ACT8930-031 CH4 VCHGIN = 5V VBAT = 3.5V RVSYS = 100Ω ACIN/CHGLEV = 01 CH4 CH3 CH2 CH2 CH1 CH1 CH1: IBAT, 1A/div CH2: VBAT, 2V/div CH3: VVSYS, 2V/div CH4: VCHGIN, 5V/div TIME: 40ms/div VCHGIN = 5V VBAT = 3.97V RVSYS = 47Ω ACIN/CHGLEV = 11 Innovative PowerTM - 25 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. CH1: IBAT, 1A/div CH2: VVSYS, 2V/div CH3: VBAT, 2V/div CH4: VCHGIN, 5V/div TIME: 40ms/div VCHGIN = 5V VBAT = 3.97V RVSYS = 47Ω ACIN/CHGLEV = 11 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 SYSTEM CONTROL INFORMATION Control Signals nRSTO Output Enable Inputs ON1, ON2, ON3, ON45, ON6 and ON7 are independent logic inputs for the regulators as shown in Table 2. Drive to logic high to enable the corresponding regulator(s); Drive to GA to disable. nRSTO is an open-drain output which asserts low when any one or more of the regulator reaches the power-OK threshold. nRSTO remains low until the reset time-out period expires. Connect a 10kΩ or greater pull-up resistor from nRSTO to an appropriate voltage supply (typically OUT1). Table 2: Control Pins PIN NAME REGULATOR(S) ON1 OUT1 ON2 OUT2 ON3 OUT3 ON45 OUT4, OUT5 ON6 OUT6 ON7 OUT7 Figure 2: Enable/Disable Sequence Innovative PowerTM - 26 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 FUNCTIONAL DESCRIPTION I2C Interface 2 The ACT8930 features an I C interface that allows advanced programming capability to enhance overall system performance. To ensure compatibility with a wide range of system processors, the I2C interface supports clock speeds of up to 400kHz (“Fast-Mode” operation) and uses standard I2C commands. I2C write-byte commands are used to program the ACT8930, and I2C read-byte commands are used to read the ACT8930’s internal registers. The ACT8930 always operates as a slave device, and is addressed using a 7-bit slave address followed by an eighth bit, which indicates whether the transaction is a readoperation or a write-operation, [1011011x]. SDA is a bi-directional data line and SCL is a clock input. The master device initiates a transaction by issuing a START condition, defined by SDA transitioning from high to low while SCL is high. Data is transferred in 8-bit packets, beginning with the MSB, and is clocked-in on the rising edge of SCL. Each packet of data is followed by an “Acknowledge” (ACK) bit, used to confirm that the data was transmitted successfully. For more information regarding the I2C 2-wire serial interface, go to the NXP website: http://www.nxp.com. Housekeeping Functions Programmable System Voltage Monitor The ACT8930 features a programmable systemvoltage monitor, which monitors the voltage at VSYS and compares it to a programmable threshold voltage. The programmable voltage threshold is programmed by SYSLEV[3:0], as shown in Table 3. SYSLEV[ ] is set to 3.0V by default. There is a 200mV rising hysteresis on SYSLEV[ ] threshold such that VVSYS needs to be 3.2V(typ) or higher in order to power up the IC. The nSYSSTAT[-] bit reflects the output of an internal voltage comparator that monitors VVSYS relative to the SYSLEV[-] voltage threshold, the value of nSYSTAT[-] = 1 when VVSYS is lower than the SYSLEV[-] voltage threshold, and nSYSTAT[-] = 0 when VVSYS is higher than the SYSLEV[-] voltage threshold. Note that the SYSLEV[-] voltage threshold is defined for falling voltages, and that the comparator produces about 200mV of hysteresis at VSYS. As a result, once VVSYS falls below the SYSLEV threshold, its voltage must increase by more than about 200mV to clear that condition. After the IC is powered up, the ACT8930 responds in one of two ways when the voltage at VSYS falls below the SYSLEV[-] voltage threshold: 1) If nSYSMODE[-] = 1 (default case), no action is taken by ACT8930. 2) If nSYSMODE[-] = 0, when VVSYS falls below the programmable threshold the ACT8930 shuts down, immediately disabling all regulators. This option is useful for implementing a programmable “under-voltage lockout” function that forces the system off when the battery voltage falls below the SYSLEV threshold voltage. Since this option does not support a controlled shutdown sequence, it is generally used as a "fail-safe" to shut the system down when the battery voltage is too low. Table 3: SYSLEV Falling Threshold SYSLEV[3:0] 0000 0001 0010 0011 0100 0101 0110 0111 1000 1001 1010 1011 1100 1101 1110 1111 Precision Voltage Detector The LBI input connects to one input of a precision voltage comparator, which can be used to monitor a system voltage such as the battery voltage. An external resistive-divider network can be used to set voltage monitoring thresholds, as shown in Functional Block Diagram. The output of the comparator is present at the nLBO open-drain output. Thermal Shutdown The ACT8930 integrates thermal shutdown protection circuitry to prevent damage resulting from excessive thermal stress, as may be encountered under fault conditions. This circuitry disables all regulators if the ACT8930 die temperature exceeds 160°C, and prevents the regulators from being enabled until the IC temperature drops by 20°C (typ). Innovative PowerTM - 27 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. SYSLEV Falling Threshold (Hysteresis = 200mV) 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 3.4 3.5 3.6 3.7 3.8 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 STEP-DOWN DC/DC REGULATORS General Description The ACT8930 features three synchronous, fixedfrequency, current-mode PWM step down converters that achieve peak efficiencies of up to 97%. REG3 is capable of supplying up to 1300mA of output current, while REG1 and REG2 support up to 1100mA. These regulators operate with a fixed frequency of 2MHz, minimizing noise in sensitive applications and allowing the use of small external components. 100% Duty Cycle Operation Each regulator is capable of operating at up to 100% duty cycle. During 100% duty-cycle operation, the high-side power MOSFET is held on continuously, providing a direct connection from the input to the output (through the inductor), ensuring the lowest possible dropout voltage in battery powered applications. Synchronous Rectification REG1, REG2, and REG3 each feature integrated nchannel synchronous rectifiers, maximizing efficiency and minimizing the total solution size and cost by eliminating the need for external rectifiers. Soft-Start When enabled, each output voltages tracks an internal 400μs soft-start ramp, minimizing input current during startup and allowing each regulator to power up in a smooth, monotonic manner that is independent of output load conditions. Compensation Each buck regulator utilizes current-mode control and a proprietary internal compensation scheme to simultaneously simplify external component selection and optimize transient performance over its full operating range. No compensation design is required; simply follow a few simple guidelines described below when choosing external components. Input Capacitor Selection The input capacitor reduces peak currents and noise induced upon the voltage source. A 4.7μF ceramic capacitor is recommended for each regulator in most applications. Output Capacitor Selection For most applications, 22μF ceramic output capacitors are recommended for REG1, REG2, and REG3. Despite the advantages of ceramic capacitors, care must be taken during the design process to ensure stable operation over the full operating voltage and temperature range. Ceramic capacitors are available in a variety of dielectrics, each of which exhibits different characteristics that can greatly affect performance over their temperature and voltage ranges. Two of the most common dielectrics are Y5V and X5R. Whereas Y5V dielectrics are inexpensive and can provide high capacitance in small packages, their capacitance varies greatly over their voltage and temperature ranges and are not recommended for DC/DC applications. X5R and X7R dielectrics are more suitable for output capacitor applications, as their characteristics are more stable over their operating ranges, and are highly recommended. Inductor Selection REG1, REG2, and REG3 utilize current-mode control and a proprietary internal compensation scheme to simultaneously simplify external component selection and optimize transient performance over their full operating range. These devices were optimized for operation with 2.2μH inductors, although inductors in the 1.5μH to 3.3μH range can be used. Choose an inductor with a low DC-resistance, and avoid inductor saturation by choosing inductors with DC ratings that exceed the maximum output current by at least 30%. Configuration Options Output Voltage Programming Each regulator powers up and regulates to its default output voltage. Once the system is enabled, each regulator's output voltage may be independently programmed to a different value, typically in order to minimize the power consumption of the microprocessor during some operating modes. Program the output voltages via the I2C serial interface by writing to the regulator's VSET[-] register as shown in Table 4. Enable / Disable Control During normal operation, each buck may be enabled or disabled via the I2C interface by writing to that regulator's ON[ ] bit. To regulator accept rising or falling edge of ON[ ] bit as on/off signal. To enable the regulator, clear ON[ ] to 0 first then set to 1. To disable the regulator, set ON[ ] to 1 first then clear it to 0. Operating Mode By default, REG1, REG2, and REG3 each operate in fixed-frequency PWM mode at medium to heavy Innovative PowerTM - 28 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 loads, while automatically transitioning to a proprietary power-saving mode at light loads in order to maximize standby battery life. In applications where low noise is critical, force fixed-frequency PWM operation across the entire load current range, at the expense of light-load efficiency, by setting the MODE[ ] bit to 1. Output OK[ ] Each DC/DC features a power-OK status bit that can be read by the system microprocessor via the I2C interface. If an output voltage is lower than the powerOK threshold, typically 7% below the programmed regulation voltage, that regulator's OK[ ] bit will be 0. via if possible. The inductor, input filter capacitor, and output filter capacitor should be connected as close together as possible, with short, direct, and wide traces. The ground nodes for each regulator's power loop should be connected at a single point in a starground configuration, and this point should be connected to the backside ground plane with multiple via. The output node for each regulator should be connected to its corresponding OUTx pin through the shortest possible route, while keeping sufficient distance from switching nodes to prevent noise injection. Finally, the exposed pad should be directly connected to the backside ground plane using multiple via to achieve low electrical and thermal resistance. PCB Layout Considerations High switching frequencies and large peak currents make PC board layout an important part of step-down DC/DC converter design. A good design minimizes excessive EMI on the feedback paths and voltage gradients in the ground plane, both of which can result in instability or regulation errors. Step-down DC/DCs exhibit discontinuous input current, so the input capacitors should be placed as close as possible to the IC, and avoiding the use of Table 4: REGx/VSET[ ] Output Voltage Setting REGx/VSET[2:0] REGx/VSET[5:3] 000 001 010 011 100 101 110 111 000 0.600 0.800 1.000 1.200 1.600 2.000 2.400 3.200 001 0.625 0.825 1.025 1.250 1.650 2.050 2.500 3.300 010 0.650 0.850 1.050 1.300 1.700 2.100 2.600 3.400 011 0.675 0.875 1.075 1.350 1.750 2.150 2.700 3.500 100 0.700 0.900 1.100 1.400 1.800 2.200 2.800 3.600 101 0.725 0.925 1.125 1.450 1.850 2.250 2.900 3.700 110 0.750 0.950 1.150 1.500 1.900 2.300 3.000 3.800 111 0.775 0.975 1.175 1.550 1.950 2.350 3.100 3.900 Innovative PowerTM - 29 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 LOW-NOISE, LOW-DROPOUT LINEAR REGULATORS General Description REG4, REG5, REG6, and REG7 are low-noise, low-dropout linear regulators (LDOs) that supply up to 320mA. Each LDO has been optimized to achieve low noise and high-PSRR, achieving more than 65dB PSRR at frequencies up to 10kHz. Output Current Limit Each LDO contains current-limit circuitry featuring a current-limit fold-back function. During normal and moderate overload conditions, the regulators can support more than their rated output currents. During extreme overload conditions, however, the current limit is reduced by approximately 30%, reducing power dissipation within the IC. Compensation The LDOs are internally compensated and require very little design effort, simply select input and output capacitors according to the guidelines below. Input Capacitor Selection Each LDO requires a small ceramic input capacitor to supply current to support fast transients at the input of the LDO. Bypassing each INL pin to GA with 1μF. High quality ceramic capacitors such as X7R and X5R dielectric types are strongly recommended. Output Capacitor Selection Each LDO requires a small 3.3μF ceramic output capacitor for stability. For best performance, each output capacitor should be connected directly between the output and GA pins, as close to the output as possible, and with a short, direct connection. High quality ceramic capacitors such as X7R and X5R dielectric types are strongly recommended. Configuration Options Output Voltage Programming By default, each LDO powers up and regulates to its default output voltage. Once the system is enabled, each output voltage may be independently programmed to a different value by writing to the regulator's VSET[-] register via the I2C serial interface as shown in Table 4. Enable / Disable Control During normal operation, each LDO may be enabled or disabled via the I2C interface by writing to that LDO's ON[ ] bit. To regulator accept rising or falling edge of ON[ ] bit as on/off signal. To enable the regulator, clear ON[ ] to 0 first then set to 1. To disable the regulator, set ON[ ] to 1 first then clear it to 0. Output Discharge Each of the ACT8930’s LDOs features an optional output discharge function, which discharges the output to ground through a 1.5kΩ resistance when the LDO is disabled. This feature may be enabled or disabled by setting DIS[-]; set DIS[-] to 1 to enable this function, clear DIS[-] to 0 to disable it. Low-Power Mode Each of ACT8930's LDOs features a LOWIQ[-] bit which, when set to 1, reduces the LDO's quiescent current by about 16%, saving power and extending battery lifetime. Output OK[ ] Each LDO features a power-OK status bit that be read by the system microprocessor via interface. If an output voltage is lower than power-OK threshold, typically 11% below programmed regulation voltage, the value of regulator's OK[-] bit will be 0. PCB Layout Considerations The ACT8930’s LDOs provide good DC, AC, and noise performance over a wide range of operating conditions, and are relatively insensitive to layout considerations. When designing a PCB, however, careful layout is necessary to prevent other circuitry from degrading LDO performance. A good design places input and output capacitors as close to the LDO inputs and output as possible, and utilizes a star-ground configuration for all regulators to prevent noise-coupling through ground. Output traces should be routed to avoid close proximity to noisy nodes, particularly the SW nodes of the DC/DCs. REFBP is a noise-filtered reference, and internally has a direct connection to the linear regulator controller. Any noise injected onto REFBP will directly affect the outputs of the linear regulators, and therefore special care should be taken to ensure that no noise is injected to the outputs via REFBP. As with the LDO output capacitors, the REFBP bypass capacitor should be placed as close to the IC as possible, with short, direct connections to the star-ground. Avoid the use of via whenever possible. Noisy nodes, such as from the DC/DCs, should be routed as far away from REFBP as possible. Innovative PowerTM - 30 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. can the the the that www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 ActivePathTM CHARGER General Description The ACT8930 features an advanced battery charger that incorporates the patent-pending ActivePath architecture for system power selection. This combination of circuits provides a complete, advanced battery-management system that automatically selects the best available input supply, manages charge current to ensure system power availability, and provides a complete, highaccuracy (±0.5%), thermally regulated, full-featured single-cell linear Li+ charger that can withstand input voltages of up to 12V. In an input over-voltage condition this circuit limits VVSYS to 4.6V, protecting any circuitry connected to VSYS from the over-voltage condition, which may exceed this circuitry's voltage capability. This circuit is capable of withstanding input voltages of up to 12V. Table 5: Input Over-Voltage Protection Setting OVPSET[1] OVPSET[0] OVP THRESHOLD 0 0 6.6V 0 1 7.0V ActivePath Architecture 1 0 7.5V The ActivePath architecture important functions: 1 1 8.0V performs three 1) System Configuration Optimization 2) Input Protection 3) Battery-Management System Configuration Optimization The ActivePath circuitry monitors the state of the input supply, the battery, and the system, and automatically reconfigures itself to optimize the power system. If a valid input supply is present, ActivePath powers the system from the input while charging the battery in parallel. This allows the battery to charge as quickly as possible, while supplying the system. If a valid input supply is not present, ActivePath powers the system from the battery. Finally, if the input is present and the system current requirement exceeds the capability of the input supply, ActivePath allows system power to be drawn from both the battery and the input supply. Input Protection Input Over-Voltage Protection The ActivePath circuitry features input over-voltage protection circuitry. This circuitry disables charging when the input voltage exceeds the voltage set by OVPSET[-] as shown in Table 5, but stands off the input voltage in order to protect the system. Note that the adjustable OVP threshold is intended to provide the charge cycle with adjustable immunity against upward voltage transients on the input, and is not intended to allow continuous charging with input voltages above the charger's normal operating voltage range. Independent of the OVPSET[-] setting, the charge cycle is not allowed to resume until the input voltage falls back into the charger's normal operating voltage range (i.e. below 6.0V). Input Supply Overload Protection The ActivePath circuitry monitors and limits the total current drawn from the input supply to a value set by the ACIN and CHGLEV inputs, as well as the resistor connected to ISET. Drive ACIN to a logiclow for “USB Mode”, which limits the input current to either 100mA, when CHGLEV is driven to a logiclow, or 450mA, when CHGLEV is driven to a logichigh. Drive ACIN to a logic-high for “AC-Mode”, which limits the input current to 2A, typically. Input Under Voltage Lockout If the input voltage applied to CHGIN falls below 3.5V (typ), an input under-voltage condition is detected and the charger is disabled. Once an input under-voltage condition is detected, a new charge cycle will initiate when the input exceeds the undervoltage threshold by at least 500mV. Battery Management The ACT8930 features a full-featured, intelligent charger for Lithium-based cells, and was designed specifically to provide a complete charging solution with minimum system design effort. The core of the charger is a CC/CV (ConstantCurrent/Constant-Voltage), linear-mode charge controller. This controller incorporates current and voltage sense circuitry, an internal 70mΩ power MOSFET, thermal-regulation circuitry, a fullfeatured state machine that implements charge control and safety features, and circuitry that eliminates the reverse blocking diode required by conventional charger designs. The charge termination voltage is highly accurate (±0.5%), and features a selection of charge safety time-out periods that protect the system from operation with damaged cells. Other features Innovative PowerTM - 31 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 include pin-programmable fast-charge current and one current-limited nSTAT output that can directly drive LED indicator or provide a logic-level status signal to the host microprocessor. Dynamic Charge Current Control (DCCC) The ACT8930's ActivePath charger features dynamic charge current control (DCCC) circuitry, which acts to ensure that the system remains powered while operating within the maximum output capability of the power adapter. The DCCC circuitry continuously monitors VVSYS, and if the voltage at VSYS drops by more than 200mV, the DCCC circuitry automatically reduces charge current in order to prevent VVSYS from continuing to drop. Charge Current Programming The ACT8930's ActivePath charger features a flexible charge current-programming scheme that combines the convenience of internal charge current programming with the flexibility of resistor based charge current programming. Current limits and charge current programming are managed as a function of the ACIN and CHGLEV pins, in combination with RISET, the resistance connected to the ISET pin. ACIN is a logic input that configures the current-limit of ActivePath's linear regulator as well as that of the battery charger. ACIN features a precise 1.2V logic threshold, so that the input voltage detection threshold may be adjusted with a simple resistive voltage divider. This input also allows a simple, lowcost dual-input charger switch to be implemented with just a few, low-cost components. When the voltage at ACIN is above the 1.2V threshold, the charger operates in “AC-Mode” with a charge current programmed by RISET, and the RISET is given by: RISET (kΩ) = 2336 × (1V/ICHG (mA)) - 0.205 With a given RISET then charge current will reduce 5 times when CHGLEV is driven low. When ACIN is below the 1.2V threshold, the charger operates in “USB-Mode”, with a maximum CHGIN input current and charge current defined by the CHGLEV input; 450mA, if CHGLEV is driven to a logic-high, or 100mA, if CHGLEV is driven to a logic-low. The ACT8930's charge summarized in Table 6. current settings are Note that the actual charge current may be limited to a current lower than the programmed fast charge current due to the ACT8930’s internal thermal regulation loop. See the Thermal Regulation section for more information. INDAT[-] indicates the status of the CHGIN input supply. A value of 1 indicates that a valid CHGIN input (CHGIN UVLO Threshold<VCHGIN<CHGIN OVP Threshold) is present, a value of 0 indicates a valid input is not present. For example, in a dualinput charger application, knowing the state of the ACIN input can identify which type of input supply has been connected. The state of the ACIN input can be read at any time by reading the ACINSTAT[-] bit, where a value of 1 indicates that the voltage at ACIN is above the 1.2V threshold (indicating that a wall-cube has been attached), and a value of 0 indicates that the voltage is below this threshold (indicating that ACIN input is not valid and USB supply input is selected). Charge-Control State Machine PRECONDITION State A new charging cycle begins with the PRECONDITION state, and operation continues in this state until VBAT exceeds the Precondition Threshold Voltage. When operating in PRECONDITION state, the cell is charged at 10% of the programmed maximum fast-charge constant current, ICHG. Once VBAT reaches the Precondition Threshold Voltage, the state machine jumps to the FASTCHARGE state. If VBAT does not reach the Precondition Threshold Voltage before the Precondition Time-out period expires, then the state machine jumps to the TIME-OUT-FAULT state in order to prevent charging a damaged cell. See the Charge Safety Timers section for more information. Table 6: ACIN and CHGLEV Inputs ACIN CHGLEV CHARGE CURRENT (mA) PRECONDITION CHARGE CURRENT (mA) 0 0 90 45 0 1 450 45 1 0 ICHG/5 10% × ICHG 1 1 ICHG 10% × ICHG Innovative PowerTM - 32 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 Figure 3: Typical Li+ charge profile and ACT8930 charge states A: PRECONDITION State B: FAST-CHARGE State C: TOP-OFF State D: END-OF-CHARGE State Figure 4: Charger State Diagram TEMP NOT OK ANY STATE (VCHGIN < VBAT) OR (VCHGIN < VCHGIN UVLO) OR (VCHGIN > VOVP) OR (SUSCHG[ ] = 1) SUSPEND TEMP-FAULT (VCHGIN > VBAT) AND (VCHGIN > VCHGIN UVLO) AND (VCHGIN < VOVP) AND (SUSCHG[ ] = 0) TEMP OK PRECONDITION TIME-OUT-FAULT PRECONDITION Time-out Total Time-out (VBAT > 2.85V) AND (TQUAL = 32ms) FAST-CHARGE (VBAT = VTERM ) AND (TQUAL = 32ms) (VBAT < VTERM - 205mV ) AND (TQUAL = 32ms) TOP-OFF (IBAT < 10% x ICHG) OR (Total Time-out) AND (TQUAL = 32ms) END-OF-CHARGE Innovative PowerTM - 33 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 FAST-CHARGE State State Machine Status In the FAST-CHARGE state, the charger operates in constant-current (CC) mode and regulates the charge current to the current set by RISET . Charging continues in CC mode until VBAT reaches the charge termination voltage (VTERM), at which point the statemachine jumps to the TOP-OFF state. If VBAT does not reach VTERM before the total time out period expires then the state-machine will jump to the “EOC” state and will re-initiate a new charge cycle after 32ms “relax”. See the Current Limits and Charge Current Programming sections for more information about setting the maximum charge current. The status of the charge state machine may be read at any time by reading CSTATE[0:1] to determine the current charging state. TOP-OFF State In the TOP-OFF state, the cell charges in constantvoltage (CV) mode. In CV mode operation, the charger regulates its output voltage to the 4.20V charge termination voltage, and the charge current is naturally reduced as the cell approaches full charge. Charging continues until the charge current drops to END-OF-CHARGE current threshold, at which point the state machine jumps to the ENDOF-CHARGE (EOC) state. If the state-machine does not jump out of the TOPOFF state before the Total-Charge Time-out period expires, the state machine jumps to the EOC state and will re-initiate a new charge cycle if VBAT falls below termination voltage 205mV (typ). For more information about the charge safety timers, see the Charging Safety Times section. END-OF-CHARGE (EOC) State In the END-OF-CHARGE (EOC) state, the charger presents a high-impedance to the battery, minimizing battery current drain and allowing the cell to “relax”. The charger continues to monitor the cell voltage, and re-initiates a charging sequence if the cell voltage drops to 205mV (typ) below the charge termination voltage. SUSPEND State The state-machine jumps to the SUSPEND state any time the battery is removed, and any time the input voltage either falls below the CHGIN UVLO threshold or exceeds the OVP threshold. Once none of these conditions are present, a new charge cycle initiates. A charging cycle may also be suspended manually by setting the SUSPEND[ ] bit. In this case, initiate a new charging sequence by clearing SUSPEND[ ] to 0. Table 7: Charging Status Indication CSTATE[0] CSTATE[1] 1 1 PRECONDITION State 1 0 FAST-CHARGE/ TOP-OFF State 0 1 END-OF-CHARGE State 0 0 SUSPEND/DISABLED/ FAULT State Thermal Regulation The charger features an internal thermal regulation loop that monitors die temperature and reduces charging current as needed to ensure that the die temperature does not exceed the thermal regulation threshold of 110°C. This feature protects against excessive junction temperature and makes the device more accommodating to aggressive thermal designs. Note, however, that attention to good thermal designs is required to achieve the fastest possible charge time by maximizing charge current. Charge Safety Timers The charger features programmable charge safety timers which help ensure a safe charge by detecting potentially damaged cells. These timers are programmable via the PRETIMO[1:0] and TOTTIMO[1:0] bits, as shown in Table 8 and Table 9. Note that in order to account for reduced charge current resulting from DCCC operation, the charge time-out periods are extended proportionally to the reduction in charge current. As a result, the actual safety period may exceed the nominal timer period. The status of the charge timers may be read at any time by reading the TIMRDAT[ ] bit, where a value of 0 indicates that neither charge timer has expired, and a value of 1 indicates that one of the charge timers has expired. PRETIMO[1] PRETIMO[0] PRECONDITION TIMEOUT PERIOD 0 0 40 mins 0 1 60 mins 1 0 80 mins 1 1 Disabled Innovative PowerTM - 34 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. STATE MACHINE STATUS www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 Table 9: Total Safety Timer Setting TOTTIMO[1] TOTTIMO[0] TOTAL TIME-OUT PERIOD 0 0 3 hrs 0 1 4 hrs 1 0 5 hrs 1 1 Disabled Charge Status Indicator The charger provides a charge-status indicator output, nSTAT. nSTAT is an open-drain output which sinks current when the charger is in an active-charging state, and is high-Z otherwise. nSTAT features an internal 8mA current limit, and is capable of directly driving a LED without the need of a current-limiting resistor or other external circuitry. To drive an LED, simply connect the LED between nSTAT pin and an appropriate supply, such as VSYS. For a logic-level charge status indication, simply connect a resistor from nSTAT to an appropriate voltage supply. Table 10: Charging Status Indication STATE nSTAT PRECONDITION Active FAST-CHARGE Active TOP-OFF Active END-OF-CHARGE High-Z SUSPEND High-Z TEMPERATURE FAULT High-Z TIMEOUT FAULT High-Z temperature of the battery pack by injecting a 102μA (typ) current into the thermistor (via the TH pin) and sensing the voltage at TH. The voltage at TH is continuously monitored, and charging is suspended if the voltage at TH exceeds either of the internal VTHH and VTHL thresholds of 0.5V and 2.51V, respectively. The net resistance (from TH to GA) required to cross the thresholds are given by: 102μA × RNOM × kHOT = 0.5V → RNOM × kHOT ≈ 5kΩ 102μA × RNOM × kCOLD = 2.51V → RNOM × kCOLD ≈ 25kΩ where RNOM is the nominal thermistor resistance at room temperature, and kHOT and kCOLD represent the ratios of the thermistor's resistance at the desired hot and cold thresholds, respectively, to the resistance at 25°C. The status of the battery temperature pin may be read at any time by reading the TEMPDAT[-] bit, where a value of 1 indicates that battery temperature is within the valid range, and a value of 0 indicates that battery temperature has exceeded either of the thresholds. Figure 5: Simple Configuration Reverse-Current Protection The charger includes internal reverse-current protection circuitry that eliminates the need for blocking diodes, reducing solution size and cost as well as dropout voltage relative to conventional battery chargers. When the voltage at CHGIN falls below VBAT, the charger automatically reconfigures its power switch to minimize current drawn from the battery. Battery Temperature Monitoring In a typical application, the TH pin is connected to the battery pack's thermistor input, as shown in Figure 5. The charger continuously monitors the Innovative PowerTM - 35 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT8930 Rev 5, 17-Sep-13 TQFN55-40 PACKAGE OUTLINE AND DIMENSIONS SYMBOL A A1 DIMENSION IN MILLIMETERS DIMENSION IN INCHES MIN MAX MIN MAX 0.700 0.800 0.028 0.031 0.200 REF 0.008 REF A2 0.000 0.050 0.000 0.002 b 0.150 0.250 0.006 0.010 D 4.900 5.100 0.193 0.201 E 4.900 5.100 0.193 0.201 D2 3.450 3.750 0.136 0.148 E2 3.450 3.750 0.136 0.148 e L R 0.400 BSC 0.300 0.500 0.300 0.016 BSC 0.012 0.020 0.012 Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. is a registered trademark of Active-Semi. Innovative PowerTM - 36 Active-Semi Proprietary―For Authorized Recipients and Customers ActivePMUTM and ActivePathTM are trademarks of Active-Semi. I2CTM is a trademark of NXP. www.active-semi.com Copyright © 2013 Active-Semi, Inc.