ACT3780 Rev 8, 09-Jul-13 ActivePathTM Battery Charger FEATURES GENERAL DESCRIPTION • ActivePath The ACT3780 is a complete battery-charging and system power management solution for portable hand-held equipment using single-cell Lithiumbased batteries. The ACT3780 incorporates ActiveSemi's proprietary ActivePath architecture which automatically selects the best available input supply for the system. • • • • • • • • • • • • • • TM System Power Selection of Best Available Input Supply 50mΩ Battery Switch for Highest Efficiency Dynamic Control of Charging Current Allowing System to Draw Maximum Load from AC/USB Input ±0.5% Battery Charge Voltage Accuracy Up to 12V Input with Over Voltage Protection Thermal Regulation for Charge Control Charge Status Outputs for LED or System Interface Battery Voltage Level Indication Programmable Fast Charge Current Programmable Charging Timer Low Reverse Leakage Current Short-Circuit and Thermal Protection Preconditioning for Deeply Depleted Battery Low Quiescent Current Standby Mode Space-Saving, Thermally-Enhanced TQFN44-20 Packages The ActivePath architecture performs three important functions: First, the battery is charged while powering with the system, minimizing current draw from the battery while ensuring that sufficient current is available to power the system. Second, if no input supply is available, system power is automatically switched to the battery. And finally, if the system load-requirement exceeds the capability of the input supply, ActivePath automatically supplements the input with the battery to satisfy the system's power requirements. In addition to ActivePath, the ACT3780 charger features a complete, high-accuracy (±0.5%), thermally regulated, stand-alone single cell linear Li+ charger with an integrated 12V power MOSFET. The ACT3780 is available in a thermally enhanced 4mm × 4mm Thin-QFN44-20. APPLICATIONS • • • • • Personal Navigation Devices Smart Mobile Phones Blue-Tooth Devices Portable Media Players Portable Devices ActivePath DIAGRAM Innovative PowerTM -1- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 ORDERING INFORMATIONcd PART NUMBER BATTERY VOLTAGE SYSTEM VOLTAGE PACKAGE PINS TEMPERATURE RANGE ACT3780QY-T 4.2V 4.6V TQFN44-20 20 -40°C to 85°C ACT3780QY410-T 4.1V 4.6V TQFN44-20 20 -40°C to 85°C c: All Active-Semi components are RoHS Compliant and with Pb-free plating unless specified differently. The term Pb-free means semiconductor products that are in compliance with current RoHS (Restriction of Hazardous Substances) standards. d: Standard product options are identified in this table. Contact factory for custom options. Minimum order quantity is 12,000 units. PIN CONFIGURATION Top View 20 19 18 17 16 nACOK 1 15 TH nBLV1 2 14 ACIN nBLV2 3 13 G nSTAT3 4 12 ISET nSTAT1 5 11 EN ACT3780QY 6 7 8 9 10 Thin-QFN44-20 Innovative PowerTM -2- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 PIN DESCRIPTIONS PIN NAME 1 nACOK CHG_IN Status Output. nACOK is an open-drain which sinks current whenever VCHG_IN is within it's valid operating range. 2 nBLV1 Battery Voltage level Monitor Output 1. Open-drain output that sinks current when asserted. Connect a 10k or greater pull-up resistors between nBLV1 and a suitable voltage supply. See Battery Voltage Level Indication Section for more information. 3 nBLV2 Battery Voltage level Monitor Output 2. Open-drain output that sinks current when asserted. Connect a 10k or greater pull-up resistors between nBLV2 and a suitable voltage supply. See Battery Voltage Level Indication Section for more information. 4 nSTAT3 CHG_IN OVP Status Output. Open-drain output that sinks current whenever VCHG_IN is greater than OVP threshold 6.9V (typ) while battery is present. For a logic-level charge status indicator, simply connect a 10k or greater pull-up resistor between nSTAT3 and a suitable voltage supply. nSTAT1 Charge State Indicator. Open-drain output with an internal 6mA current limit, allowing this pin to directly drive an indicator LED. For a logic-level charge status indicator, simply connect a 10k or greater pull-up resistor between nSTAT1 and a suitable voltage supply. See the Charging Status Indication Section for more information. 6 nSTAT2 Charge State Indicator. Open-drain output with an internal 6mA current limit, allowing this pin to directly drive an indicator LED. For a logic-level charge status indicator, simply connect a 10k or greater pull-up resistor between nSTAT2 and a suitable voltage supply. See the Charging Status Indication Section for more information. 13 G 7 CHG_IN Power Input. Bypass to G with a high quality ceramic capacitor placed as close to the IC as possible. 8, 9 BAT Battery Charger output. Connect this pin to the positive terminal of the battery. Bypass to G with a high quality ceramic capacitor placed as close to the IC as possible. 10 CHGLEV Charging State Select Input. Drive CHGLEV to VSYS or to a logic high for high-current charging mode or drive to G or a logic low for low-current charging mode. See the ACIN and CHGLEV Inputs section for more information. 11 EN EN Charger Enable Input. Drive to a logic high to enable IC, drive to a logic low to disable the device and enter suspend mode. 12 ISET Charge Current Set Input. Connect a resistor from ISET to G to set the fast-charge current. 14 ACIN AC Adaptor Detect Logic Input. Detects presence of a wall adaptor and automatically adjusts the charge current to the maximum charge current level. See the ACIN and CHGLEV Inputs section for more information. 15 TH 16 DCCC Dynamic Control of Charging Current Set Input. Connect a resistor from DCCC to G to set the DCCC voltage. See the Dynamic Charge Current Control section for more information. 17 BTR Safety Timer Programming Input. Connect a resistor from BTR to G to set the safety timers. Do not leave this pin floating. See the Charging Safety Timers Section for more information. 18, 19, 20 SYS System Power Output. Bypass to G with a high quality ceramic capacitor placed as close to the IC as possible. 5 EP DESCRIPTION Ground. Temperature Sensing Input. Connect to battery thermistor terminal. See the Battery Temperature Monitoring section for more information. Exposed Pad. Must be soldered to ground on the PCB. Innovative PowerTM -3- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 ABSOLUTE MAXIMUM RATINGSc PARAMETER VALUE UNIT CHG_IN to G -0.3 to + 14 V BAT, SYS, BTR, ISET, DCCC, ACIN, CHGLEV, EN, TH, nACOK, nSTAT1, nSTAT2, nSTAT3, nBLV1, nBLV2 to G -0.3 to + 6 V 3.5 A 4 A Maximum Junction Temperature -40 to 150 °C Storage Temperature -60 to 150 °C 300 °C Input Current Output Current (Internal Limit) BAT to SYS Lead Temperature (Soldering, 10 sec) c: Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. ELECTRICAL CHARACTERISTICS (VCHG_IN = 5.0V, RISET = 1kΩ, RBTR = 62kΩ, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT ActivePath CHG_IN Voltage Range VCHG_IN CHG_IN UVLO Voltage VUVLO CHG_IN UVLO Hysteresis 4.35 Voltage Rising 3.65 VHYS(UVLO) CHG_IN OVP Threshold VOVP CHG_IN OVP Hysteresis VHYS(OVP) CHG_IN to SYS On-Resistance Voltage Rising 6.60 CHG_IN to SYS Current Limit 6.90 60 V V 7.20 0.3 ACIN = 1 V mV 200 1.8 RDSON_Q1 ISYS = 100mA IUSB 4.05 360 TM ISUP(CHG_IN) VCHG_IN = 6V, VBAT = 4.3V, ActivePath Enabled and SYS No Load, Charger in EOC or Time Out state or Disabled. IAC V 1.25 VCHG_IN = 6V, VBAT float CHG_IN Supply Current 3.85 12 µA mA 0.5 2.5 Ω A ACIN = G, CHGLEV = G 80 90 100 mA ACIN = G, CHGLEV = SYS 400 450 500 mA 4.4 4.6 4.8 V 90 100 110 µA SYS and DCCC Regulation SYS Regulated Voltage DCCC Pull-Up Current VSYS_REG ISYS = 100mA IDCCC Innovative PowerTM -4- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 ELECTRICAL CHARACTERISTICS CONT’D (VCHG_IN = 5.0V, RISET = 1kΩ, RBTR = 62kΩ, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Charger BAT to SYS On Resistance RDSON_Q2 SYS to BAT Turn On Threshold VCHG_ON SYS - BAT 40 SYS to BAT Turn Off Threshold VCHG_OFF SYS - BAT -30 Charge Termination Voltage Battery Reverse Leakage Current VTERM IBAT_REV 4.179 4.200 4.221 ACT3780QY410 4.075 4.100 4.125 VSYS < VBAT + 100mV, ISYS = 0mA 2.5 5 VSYS = 4.5V to 5.5V, IBAT = 10mA 0.025 VFSTSET Fast Charge VPRESET Precondition Charge IFSTCHG ACIN = SYS, CHGLEV = SYS ACIN = G, CHGLEV = G IPRECHG VBAT = 2.5V 100 400 450 500 -17.5% 0.5*ISET 17.5% 10% ISET ACIN = SYS, CHGLEV = SYS 10% ISET Precondition Voltage Threshold VPRECHG VBAT Voltage Rising 2.7 VHYS(PRECHG) VBAT Voltage Falling VBAT = 4.2V mA 12.5% MIN(10%ISET, 90mA) ACIN = SYS, CHGLEV = G VCHG_IN = 5V, Charger is in EOC state or time-out fault state or disabled. IEOC ISETe 10% ISET ILKG_BAT End-of Charge Current Threshold 90 ACIN = G, CHGLEV = SYS Leakage Current to BAT Precondition Threshold Hysteresis 80 -12.5% µA V 0.1 VBAT = 3.5V ACIN = G, CHGLEV = SYS RISET = 1kΩ ACIN = SYS, CHGLEV = G V %/V 1 2 Precondition Charge Current 75 ACT3780QY TA = 25°C ACIN = G, CHGLEV = Gc Charge Current mΩ mV Line Regulation ISET Pin Voltage 50 mA 0 5 µA 2.85 3.00 V 150 220 mV ACIN = G 4 ACIN = SYS 10 % Sleep-Mode Entry Threshold VSLPENT 150 250 mV Sleep-Mode Exit Threshold VSLPEXIT 50 150 mV Charge Restart Threshold VRCH 175 200 mV Fast Charge Safety Timer TNORMAL Precondition Safety Timer TPRE Innovative PowerTM VSYS – VBAT, VBAT Falling RBTR = 62kΩ 3 f RBTR = 62kΩ 1 -5- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. 150 hr hr www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 ELECTRICAL CHARACTERISTICS CONT’D (VCHG_IN = 5.0V, RISET = 1kΩ, RBTR = 62kΩ, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT 92 100 108 µA Temperature Sense Comparator TH Pull-Up Current ITH VCHG_IN > VBAT + 200mV VTH Upper Temperature Voltage Threshold VTHH Down-going, simulate a NTC going hotter 0.475 0.505 0.535 V VTH Lower Temperature Voltage Threshold VTHL Up-going, simulate a NTC going colder 2.440 2.510 2.580 V VTH Hysteresis VHYS 30 45 mV EN, ACIN and CHGLEV Inputs EN, ACIN, CHGLEV Pin Logic High Input Voltage VIH EN, ACIN, CHGLEV Pin Logic Low Input Voltage VIL EN Pin Logic Leakage Current ILKG1 1.4 V VCHG_IN = 4.2V, EN = SYS 0.4 V 1 µA 8 mA nSTAT1, nSTAT2, nSTAT3, nACOK, nBLV1, nBLV2 Outputs Sink Current InSTATx Output Low Voltage Leakage Current nSTAT1, nSTAT2 4 6 VOL nSTAT1, nSTAT2, nSTAT3, nACOK, Isink = 1mA 0.5 V VLOL nBLV1, nBLV2, InBLVx = 2mA 0.3 V ILKG2 nSTAT1, nSTAT2, nSTAT3, nACOK, nBLV1, nBLV2, VnSTATx = VnACOK = 5V 1 µA Thermal Shutdown Regulation Thermal Regulation Threshold TTRH Thermal Shutdown Temperature TSHTD THYS(SHTD) Thermal Shutdown Hysteresis 110 °C Temperature Rising 160 °C Temperature Falling 25 °C c: Charge current is min of 90mA or ISET 2: Charge current is min of 450mA or ISET 3: ISET (mA) = 495 / (RISET (kΩ) - 0.036) f: TPRECONDITION = TNORMAL / 3 (typ) Innovative PowerTM -6- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 FUNCTIONAL BLOCK DIAGRAM Body Control (Optional) AC Adaptor ACT3780 CHG_IN SYS System Supply USB Body Control BAT ACIN + CURRENT SENSE EN VOLTAGE SENSE PRECONDITION REF CHGLEV VTHH TH VTHL nBLV1 nBLV2 + – + – Thermal Shutdown nACOK System and Charger Control ISET nSTAT3 nSTAT2 DCCC nSTAT1 BTR THERMAL REGULATION EP Innovative PowerTM -7- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. 110°C G www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 when CHGLEV is driven to a logic-high, or to 90mA, when CHGLEV is driven to a logic-low. This functionality provides simple means of implementing a solution that operates within the current-capability limitations of the USB port while taking advantage of the high output current capability of AC adapters. For more information about the ACIN input, see the ACIN and CHGLEV Inputs section. FUNCTIONAL DESCRIPTION The ACT3780 is a complete battery-charging and system power management solution for portable hand-held equipment using single-cell Lithiumbased batteries. The ACT3780 incorporates ActiveSemi's patent-pending ActivePath architecture which automatically selects the best available input supply for the system, and additionally features a complete, high-accuracy (±0.5%), thermally regulated, Full-Featured single cell linear Li+ charger with an integrated 12V power MOSFET. Dual-Function MOSFET (Q2) Q2 is a dual-function power MOSFET, that serves both as a low-resistance (50mΩ) switch that supplies the load current requirements of the system from the battery when no input supply is present or the system demands more current than the input can provide. ActivePath Architecture Active-semi's proprietary ActivePath architecture performs three important functions: System Configuration Optimization Current-Limits and Charge-Current Programming Depending upon the state of the input supply, ActivePath automatically optimizes the power system configuration. If the input supply is present, ActivePath powers the system in parallel with the battery, so that both system power and charge current can be independently managed to ensure that system power requirements are satisfied, the battery can charge as quickly as possible, and to ensure that the total system current does not exceed the capability of the input supply. If the input supply is not present, then ActivePath automatically configures the system to draw power from the battery. Finally, if the system current requirement exceeds the capability of the input supply, ActivePath automatically configures the battery to support the load in parallel with the input supply, to ensure maximum supply capability to the load under peak-power consumption conditions. ACT3780 provides a flexible current programming scheme that combines the convenience of internal charge current programming with the flexibility of resistor-based charge current programming. Current limits and charge current programming are managed as a function of the ACIN and CHGLEV pins, in combination with RISET, the resistance connected to the ISET pin. ACIN and CHGLEV Inputs ACIN is a logic input that configures the current-limit of input transistor (Q1) as well as that of the battery charger. ACIN features an logic input threshold, so that the input voltage detection threshold may be adjusted with a simple resistive voltage divider. This input also allows a simple, low-cost dual-input charger switch to be implemented with just a few, low-cost components. As shown in the Functional Block Diagram. Input MOSFET Power (Q1) At the input of the ACT3780's ActivePath circuit is Q1, an integrated 12V power MOSFET. Q1 is part of an internal low-dropout linear regulator that regulates the system voltage (VSYS) to 4.6V, protecting the system from high-voltage input supplies. Q1 includes several features that can be used to limit the total current drawn from the input supply. When ACIN is driven to a logic high, the ActivePath operates in “AC-Mode” and the charger charges at the current programmed by RISET, ISET(mA) = 495 / (RISET(kΩ) - 0.036) When ACIN is driven to a logic-low, the ActivePath circuitry operates in “USB-Mode”, which enforces a maximum charge current setting of 450mA, if CHGLEV is driven to a logic-high, or 90mA, if CHGLEV is driven to a logic-low. ACIN's current limit is determined primarily by the ACIN input, Q1 operates in “AC-Mode” when ACIN is driven to a logic-high, and Q1 operates in “USBMode” when driven to a logic-low. When operating in “AC-Mode”, Q1's internal current limit is programmed to 2.5A. When operating in “USBMode”, Q1's current limit is set to either 450mA, Innovative PowerTM -8- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. (1) www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 The ACT3780's charge current summarized in the table below: settings resistance is monitored by comparing the voltage at TH to the internal VTHH and VTHL thresholds of 0.5V and 2.5V, respectively. When VTH > VTHL or VTH < VTHH charging and the charge timers are suspended. When VTH returns to the normal range, charging and the charge timers resume. are Table 1: ACIN and CHGLEV Inputs Table ACIN CHGLEV Fast Charge Current High High ISET (mA) = 495 / (RISET (kΩ) - 0.036) High Low 0.5 × ISET Low High Min (450mA, ISET ) Low Low Min (90mA, ISET ) The net resistance from TH to G required to cross the threshold is given by: 100µA × RNOM × kHOT = 0.5V → RNOM × kHOT = 5kΩ 100µA × RNOM × kCOLD = 2.5V → RNOM × kCOLD = 25kΩ where RNOM is the nominal thermistor resistance at room temperature, and kHOT and kCOLD are the ratios of the thermistor's resistance at the desired hot and cold thresholds, respectively. Note that the actual charging current may be limited to a current that is lower than the programmed fastcharge current due to the ACT3780’s internal thermal regulation loop. See the Thermal Regulation and Protection section for more information. Figure 1: Simple Configuration Dynamic Charge Current Control (DCCC) The ACT3780's ActivePath Charger features Dynamic Charge Current Control (DCCC) circuitry, which continuously monitors the input supply to prevent input overload conditions. DCCC reduces the charge current when the SYS voltage decreases to VDCCC and stops charging when SYS drops below VDCCC by 1.5% (typical). The DCCC voltage threshold is programmed by connecting a resistor from DCCC to GA according to the following equation: VDCCC = 2 × (IDCCC × RDCCC ) (2) Design Procedure Where RDCCC is the value of the external resistor, and IDCCC (100µA typical) is the value of the current sourced from DCCC. When designing with thermistors it is important to keep in mind that their nonlinear behavior typically allows one to directly control no more than one threshold at a time. As a result, the design procedure can change depending on which threshold is most critical for a given application. Given the tolerances of the RDCCC and IDCCC ,the DCCC voltage threshold should be programmed to be no less than 3.3V to prevent triggering the UVLO, and to be no larger than 4.4V to prevent engaging DCCC prematurely. A 19.1k (1%), or 18.7k (1%) resistor for RDCCC is recommended. Most application requirements can be solved using one of three cases, Battery Temperature Monitoring 1) Simple solution The ACT3780 continuously monitors the temperature of the battery pack by sensing the resistance of its thermistor, and suspends charging if the temperature of the battery pack exceeds the safety limits. 2) Fix VTHH, accept the resulting VTHL 3) Fix VTHL, accept the resulting VTHH The ACT3780 was designed to achieve an operating temperature range that is suitable for most applications with very little design effort. The simple solution is often found to provide reasonable results and should always be used first, then the design procedure may proceed to one of the other solutions if necessary. In a typical application, shown in Figure 1, the TH pin is connected to the battery pack's thermistor input. The ACT3780 injects a 100µA current out of the TH pin into the thermistor, so that the thermistor Innovative PowerTM -9- Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 In each design example, we refer to the Vishay NTHS series of NTCs, and more specifically those which follow a "curve 2" characteristic. For more information on these NTCs, as well as access to the resistance/temperature characteristic tables referred to in the example, please refer to the Vishay website at http://www.vishay.com/thermistors. Simple Solution The ACT3780 was designed to accommodate most requirements with very little design effort, but also provides flexibility when additional control over a design is required. Initial thermistor selection is accomplished by choosing one that best meets the following requirements: RNOM = 5kΩ/kHOT, and (VTHH/ITH) = kHOT(@40°C) × RNOM + R R = (VTHH/ITH) - kHOT(@40°C) × RNOM R = (0.5V/100µA) - 0.5758 × 6.8kΩ Finally, R = 5kΩ - 3.9kΩ = 1.1kΩ This result shows that adding 1.1kΩ in series with the thermistor sets the net resistance from TH to G to be 0.5V at 40°C, satisfying VTHH at the correct temperature. Adding this resistance, however, also impacts the lower temperature limit as follows: VTHL/ITH = kCOLD(@TC) × RNOM + R kCOLD(@TC) = (VTHL/ITH - R)/RNOM Finally, RNOM = 25kΩ/kCOLD where kHOT and kCOLD for a given thermistor can be found on its characteristic tables. Taking a 0°C to 40°C application using a "curve 2" NTC for this example, from the characteristic tables one finds that kHOT and kCOLD are 0.5758 and 2.816, respectively, and the RNOM that most closely satisfies these requirements is therefore around 8.8kΩ. Selecting 10kΩ as the nearest standard value, calculate kCOLD and kHOT as: kCOLD(@TC) = (25kΩ - 1.1kΩ)/6.8kΩ = 3.51 Reviewing the characteristic curves, the lower threshold is found to move to -5°C, a change of only 1°C. As a result, the system satisfies the upper threshold of 40°C with an operating temperature range of -5°C to 40°C, vs. our design target of 0°C to 40°C. It is informative to highlight that due to the NTC behavior of the thermistor, the relative impact on the lower threshold is significantly smaller than the impact on the upper threshold. kCOLD = VTHL/(ITH × RNOM) = 2.5V/(100µA × 10kΩ) = 2.5 kHOT = VTHH/(ITH × RNOM) = 0.5V/(100µA × 10kΩ) = 0.5 Identifying these values on the curve 2 characteristic tables indicates that the resulting operating temperature range is 2°C to 44°C, vs. the design goal of 0°C to 40°C. This example demonstrates that one can satisfy common operating temperature ranges with very little design effort. Fix VTHL Fix VTHH Following the same example as above, the "unadjusted" results yield an operating temperature range of -6°C to 33°C vs. the design goal of 0°C to 40°C. In applications that favor VTHH over VTHL, however, one can control the voltage present at TH at low temperatures by connecting a resistor in parallel with ITH. The desired resistance can be found using the following equation: (ITH + (VCHG_IN - VTHL)/R) × kCOLD(@0°C) × RNOM = VTHL For demonstration purposes, supposing that we had selected the next closest standard thermistor value of 6.8kΩ in the example above, we would have obtained the following results: Rearranging yields kCOLD = VTHL/(ITH × RNOM) = 2.5V/(100µA × 6.8kΩ) = 3.67 R = 82kΩ kHOT = VTHH/(ITH × RNOM) = 0.5V/(100µA × 6.8kΩ) = 0.74 Adding 82kΩ in parallel with the current source increases the net current flowing into the thermistor, thus increasing the voltage at TH. Adding this resistance, however, also impacts the upper temperature limit: which, according to the characteristic tables would have resulted in an operating temperature range of -6°C to 33°C vs. the design goal of 0°C to 40°C. In this case, one can add resistance in series with the thermistor to shift the range upwards, using the following equation: Innovative PowerTM R = (VCHG_IN - VTHL)/(VTHL/(kCOLD(@0°C) × RNOM) - ITH) R = (5V - 2.5V)/(2.5V/(2.816 × 6.8kΩ) - 100µA) VTHH = (ITH + (VCHG_IN - VTHH)/R) × kHOT(@40°C) × RNOM Rearranging yields, - 10 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 kHOT(@TC) = VTHH/(RNOM × (ITH + (VCHG_IN - VTHH)/R)) automatically restart. kHOT(@TC) = 0.5V/(6.8kΩ × (100µA + (5V - 0.5V)/82kΩ)) = 0.4748 Charging Safety Timers Thermal Regulation and Protection The ACT3780 features an internal thermal regulation loop that reduces the charging current as necessary to ensure that the die temperature does not rise beyond the thermal regulation threshold of 110°C. This feature protects the ACT3780 against excessive junction temperature and makes the device more accommodating to aggressive thermal designs. Note, however, that attention to good thermal designs is required to achieve the fastest possible charge time by maximizing charge current. In order to account for the extended total charge time resulting from operation in thermal regulation mode, the charge timeout periods are extended proportionally to the reduction in charge current. The conditions that cause the ACT3780 to reduce charge current in accordance to the internal thermal regulation loop can be approximated by calculating the power dissipated in the part. The ACT3780 features a programmable safety charging timer by setting an external resistor from BTR pin to G (RBTR). The time out period is calculated as shown in Figure 2. The maximum RBTR should not be larger than 68kΩ. If the timeout period expires without change termination, the ACT3780 will jump to EOC state. If the ACT3780 detects that the charger remains in precondition for longer than the precondition time out period (which determined as TNORMAL/3), the ACT3780 turns off the charger and generates a FAULT to ensure prevent charging a bad cell. Figure 2: TNORMAL vs. RBTR 190 TNORMAL (Min) Reviewing the characteristic curves, the upper threshold is found to move to 45°C, a change of about 14°C. Adding the parallel resistance has allowed us to achieve our desired lower threshold of 0°C with an operating temperature range of 0°C to 45°C, vs. our design target of 0°C to 40°C. 160 130 100 The ACT3780 also features thermal shutdown for further protection. When the device temperature exceeds 160°C, the device will automatically turn off to prevent the IC from damage. After the die temperature decreases below 135°C, the IC will 70 30 35 40 45 50 Figure 4: Fix VTHL Configuration Fix VTHH Configuration - 11 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. 60 65 70 RBTR (kΩ) Figure 3: Innovative PowerTM 55 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 Charging Status Indication Table 4: The ACT3780 provides nSTAT1 and nSTAT2 Outputs to indicate the Charging Status of the charger. These are two open-drain outputs which sink current went asserted and high-Z otherwise. These outputs have internal 6mA current limits, and are capable of directly driving LEDs, without the need of current-limiting resistors or other external circuitry, for a visual charge-status indication. To drive an LED, simply connect the LED between each pin and an appropriate supply (typically VSYS). For a logic level indication, simply connect a resistor from each output to a appropriate voltage supply. For more details, see table 2 for LED indication: nACOK Output Table Table 2: Charging Status Indication Table STATE nSTAT1 nSTAT2 Precondition Low Low Fast Charge Low High Charge Complete High High Disabled High High Input Floating High High Fault High High Battery Voltage Level Indication When the battery is being charged, the ACT3780 senses VBAT and features nBLV1 and nBLV2 as two battery voltage level indicator outputs. These are two open-drain outputs which sink current whenever asserted. For logic level indication, simply connect a resistor from each output to an appropriate voltage supply. See below table 3 for more information: Table 3: Battery Voltage Level Indication Table VBAT STATE nBLV2 nBLV1 VBAT < 2.8V Low Low 2.8V ≤ VBAT < 3.6V Low High 3.6V ≤ VBAT < 4V High Low 4V ≤ VBAT High High CHG_IN Voltage nACOK nSTAT3 VUVLO < VCHG_IN < VOVP Low X VCHG_IN > VOVP High Low VCHG_IN < VUVLO High High Over Voltage Protection (OVP) The ACT3780 provides over voltage protection function. When the ACT3780 detects the voltage at CHG_IN pin is greater than 6.9V, it automatically turns off the Q1 Power FET and turns on the Q2 to supply the system load from the battery. nSTAT3 Output The ACT3780's nSTAT3 output provide a logic level indication of OVP. This is an open-drain Output which sinks current whenever VCHG_IN is greater than 6.9V. Enable/Disable Input The ACT3780's EN is used to enable the IC. Driving this pin to a logic high enables the ACT3780. Driving EN pin to a logic low forces the device to enter suspend mode. In suspend mode, if a valid input is present at CHG_IN pin, Q1 is turned off. And the system is powered by the battery via Q2. This feature is designed to limit the power drawn from the input supply (such as USB in suspend mode). CC/CV Regulation Loop At the core of the ACT3780's battery charger is a CC/CV regulation loop, which regulates either current or voltage as necessary to ensure fast and safe charging of the battery. In a normal charge cycle, this loop regulates the current to the value set by the external resistor at the ISET pin. Charging continues at this current until the battery cell voltage reaches the termination voltage (default is 4.2V or 4.1V). At this point the CV loop takes over, and charge current is allowed to decrease as necessary to maintain charging at the termination voltage. nACOK Output Enable/Disable Charging The ACT3780's nACOK output provides a logiclevel indication of the status of the voltage at CHG_IN. nACOK is an open-drain output which sinks current when a valid input is applied to CHG_IN. The ACT3780's DCCC pin can be used to disable charging. By floating the DCCC pin, the charger will be disabled. Innovative PowerTM - 12 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 Figure 5: Typical Li+ Charge Profile and ACT3780 Charge States A: PRECONDITION State B: FAST-CHARGE State C: TOP-OFF State D: END-OF-CHARGE State Charger State-Machine PRECONDITION State A new charging cycle begins with the PRECONDITION state, and operation continues in this state until VBAT exceeds the Precondition Threshold Voltage of 2.85V (typ). When operating in PRECONDITION state, the cell is charged at a reduced current, 10% of the programmed maximum fast-charge constant current, ISET. Once VBAT reaches the Precondition Threshold Voltage the state machine jumps to the FAST-CHARGE state. If VBAT does not reach the Precondition Threshold Voltage before the Precondition Timeout period TPRECONDITION expires, then a damaged cell is detected and the state machine jumps to the TIMEOUT- FAULT State. For the Precondition Timeout period, see the Charging Safety Timers section for more information. FAST-CHARGE State In FAST-CHARGE state, the ACT3780 charges at the current programmed by RISET (see the Current Limits and Charge Current Programming section for more information). During a normal charge cycle fast-charge continues in CC mode until VBAT reaches the charge termination voltage (VTERM), at which point the ACT3780 charges in TOP-OFF state. If VBAT does not proceed out of the FASTCHARGE state before the Normal Timeout period (TNORMAL) expires, then the state machine jumps to the END-OF-CHARGE state and will re-initiate a new charge cycle after 2-4ms “relax”. Innovative PowerTM TOP-OFF State In the TOP-OFF state, the cell is charged in constant-voltage (CV) mode. Charge current decreases as charging continues. During a normal charging cycle charging proceeds until the charge current decreases below the END-OF-CHARGE (EOC) threshold, defined as 10% of ISET (ACIN = 1) or 4% of ISET (ACIN = 0) . When this happens, the state-machine terminates the charge cycle and jumps to the EOC state. If the state-machine does not jump out of the TOP-OFF state before the TotalCharge Timeout period expires, the state machine jumps to the EOC state and will re-initiate a new charge cycle when VBAT falls 175mV(typ) below the charge termination voltage. END-OF-CHARGE State In the END-OF-CHARGE (EOC) state, the ACT3780 presents a high-impedance to the battery, allowing the cell to “relax” and minimizes battery leakage current. The ACT3780 continues to monitor the cell voltage, however, so that it can re-initiate charging cycles when VBAT falls 175mV(typ) below the charge termination voltage. SUSPEND State The ACT3780 features an user-selectable suspend charge mode, which disables the charger but keeps other circuiting functional. The charger can be put into suspend mode by driving EN to logic low. Upon exiting the SUSPEND State, the charge timer is reset and the state machine jumps to PRECONDITION state. - 13 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 Figure 6: Charger State Diagram TEMP NOT OK ANY STATE BATTERY REMOVED OR (VCHGIN < VBAT) OR (VCHGIN < VCHGIN UVLO) OR (VCHGIN > VOVP) OR EN = LOW SUSPEND TEMP-FAULT BATTERY REPLACED AND (VCHGIN > VBAT) AND (VCHGIN > VCHGIN UVLO) AND (VCHGIN < VOVP) AND EN = HIGH TEMP OK T > TPRECONDITION TIMEOUT-FAULT PRECONDITION VBAT > 2.85V T > TNORMAL FAST-CHARGE VBAT = VTERM TOP-OFF IBAT < IEOC OR T > TNORMAL END-OF-CHARGE Innovative PowerTM - 14 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 TYPICAL PERFORMANCE CHARACTERISTICS (VCHG_IN = 5V, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) Supply Current vs. CHG_IN Voltage (EN = 0) Standby Current (mA) 100 80 60 40 20 0 Dropout Operation 4 3 Normal Operation 2 Over-Voltage Operation 1 VBAT = 4.3V EN = 1 Under-voltage Lockout 0 3 5 7 9 11 3 13 5 7 1 No CHG_IN CHGLEV = 0 3 4 5 No CHG_IN VCHG_IN = 5V 3 2 CHGLEV = 0 VBAT = 4V EN = 0 -40 -20 0 20 40 60 80 100 120 140 Temperature (°C) Battery Voltage (USB Mode) Charger Current vs. Battery Voltage (USB Mode) VBAT Falling VBAT Rising 200 100 CHG_IN = 5V ISYS = 0 mA 500mA USB 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ACT3780-006 100 ACT3780-005 300 0.5 4 Bat Voltage (V) 400 0 5 1 6 500 Charger Current (mA) Battery Leakage Current (µA) 2 Charger Current (mA) BAT Reverse Leakage (µA) 3 ACT3780-004 4 2 13 6 ACT3780-003 5 1 11 BAT Reverse Leakage vs. Temperature BAT Reverse Leakage vs. Bat Voltage 6 0 9 CHG_IN Voltage (V) CHG_IN Voltage (V) 0 ACT3780-002 120 Supply Current (µA) Standby Current vs. CHG_IN Voltage 5 ACT3780-001 140 80 VBAT Falling 60 VBAT Rising 40 20 CHG_IN = 5V ISYS = 0 mA 100mA USB 0 4.5 0 0.5 Battery Voltage (V) Innovative PowerTM 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Battery Voltage (V) - 15 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. 1.0 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 TYPICAL PERFORMANCE CHARACTERISTICS (VCHG_IN = 5V, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) Charger Current vs. Battery Voltage (AC Mode) Pre-Charge Current (mA) Charger Current (mA) 800 600 VBAT Falling 400 VBAT Rising 200 0 0.0 100 ACIN/CHGLEV = 00 80 ACIN/CHGLEV = 11 60 40 20 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -50 0 Battery Voltage (V) 100 150 Battery Regulation Accuracy vs. Temperature 1000 ACIN/CHGLEV = 11 ACT3780-010 VCHG_IN = 5V VBAT = 3.5V 1.0 ACT3780-009 0.5 800 600 Error (%) Fast Charge Current (mA) 50 Temperature (°C) Fast Charge Current vs. Temperature 1200 ACIN/CHGLEV = 01 400 0.0 -0.5 ACIN/CHGLEV = 00 200 0 VCHG_IN = 4.5V ACIN/CHGLEV = 11 -1.0 -50 0 50 100 150 -40 -15 Temperature (°C) SYS Output Voltage vs. CHG_IN Voltage 60 85 SYS Voltage vs. SYS Current (DC Input) ACT3780-012 VCHG_IN = 5.5V 4.60 SYS Voltage (V) 4.6 4.5 ACIN = 0 CHGLEV = 0 4.3 35 4.80 ACT3780-011 4.7 4.4 10 Temperature (°C) 4.8 SYS Voltage (V) VCHG_IN = 5V VBAT = 2.5V ACIN/CHGLEV = 01 ACT3780-008 CHG_IN = 5V ISYS = 0mA RISET = 510Ω 1000 Pre-Charge Current vs. Temperature 120 ACT3780-007 1200 4.2 4.40 VCHG_IN = 5V 4.20 4.00 3.80 4.1 ISYS = 10mA 4.0 0 2 4 6 8 10 12 VBAT = 4V ACIN/CHGLEV = 11 3.60 0 14 - 16 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. 1000 1500 2000 SYS Current (mA) CHG_IN Voltage (V) Innovative PowerTM 500 www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 TYPICAL PERFORMANCE CHARACTERISTICS (VCHG_IN = 5V, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) SYS Voltage vs. SYS Current (USB) RDSON Q1 vs. Temperature 4.40 4.20 0.5 RDSON Q1 (Ω) SYS Voltage (V) 4.60 ACT3780-014 0.6 ACT3780-013 4.80 VCHG_IN = 5V - 500mA 4.00 3.80 VCHG_IN = 5V - 100mA 0.4 0.3 0.2 3.60 VCHG_IN = 4.5V No BAT 0.1 3.40 0 400 800 1200 1600 2000 2400 -40 -15 10 35 60 85 110 SYS Current (mA) Temperature (°C) DC Connect with Battery Present DC Disconnect with Battery Present CH1 CH2 CH2 0V 0V Charging CH3 ACT3780-016 ACT3780-015 CH1 135 Charging CH3 0mA 0mA RSYS = 22Ω VBAT = 3.6V ACIN/CHGLEV = 11 RSYS = 22Ω VBAT = 3.6V ACIN/CHGLEV = 11 CH1: VSYS, 2.00V/div CH2: VCHG_IN, 5.00V/div CH3: IBAT, 500mA/div TIME: 400μs/div CH1: VSYS, 2.00V/div CH2: VCHG_IN, 5.00V/div CH3: IBAT, 500mA/div TIME: 400µs/div Battery Connect ACT3780-017 CH1 CH2 CH3 CH1: VSYS, 2.00V/div CH2: VBAT, 2.00V/div CH3: IBAT, 200mA/div TIME: 400μs/div Innovative PowerTM - 17 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 TYPICAL PERFORMANCE CHARACTERISTICS (VCHG_IN = 5V, RDCCC = 18.7kΩ, TA = 25°C, unless otherwise specified.) Charge Current Response vs. CHGLEV CH1 ACT3780-019 ACT3780-018 CH1 0V CH2 ACIN = 0 ISYS = 0A VBAT = 3.6V Charge Current Response vs. ACIN RSYS = 22Ω VBAT = 3.6V CHGLEV = 1 CH2 CH3 CH3 0mA CH1: VCHGLEV, 5.00V/div CH2: VSYS, 1.00V/div CH3: IBAT, 200mA/div Innovative PowerTM CH1: VACIN, 5.00V/div CH2: VSYS, 1.00V/div CH3: IBAT, 500mA/div - 18 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc. ACT3780 Rev 8, 09-Jul-13 PACKAGE OUTLINE TQFN44-20 PACKAGE OUTLINE AND DIMENSIONS D D/2 SYMBOL E/2 A MIN MAX A 0.700 0.800 0.028 0.031 A1 0.000 0.050 0.000 0.002 0.008 REF 0.180 0.300 0.039 0.012 D 3.900 4.100 0.154 0.161 E 3.900 4.100 0.154 0.161 D2 2.550 2.80 0.090 0.100 E2 2.550 2.80 0.090 0.100 R b 0.200 REF b L D2 L MAX e A1 DIMENSION IN INCHES MIN A3 E A3 DIMENSION IN MILLIMETERS K 0.500 BSC 0.300 0.500 0.200 TYP 0.200 --- 0.020 BSC 0.012 0.020 0.008 TYP 0.008 --- e E2 K R Active-Semi, Inc. reserves the right to modify the circuitry or specifications without notice. Users should evaluate each product to make sure that it is suitable for their applications. Active-Semi products are not intended or authorized for use as critical components in life-support devices or systems. Active-Semi, Inc. does not assume any liability arising out of the use of any product or circuit described in this datasheet, nor does it convey any patent license. Active-Semi and its logo are trademarks of Active-Semi, Inc. For more information on this and other products, contact [email protected] or visit http://www.active-semi.com. is a registered trademark of Active-Semi. Innovative PowerTM - 19 - Active-Semi Proprietary―For Authorized Recipients and Customers ActivePathTM is a trademark of Active-Semi. www.active-semi.com Copyright © 2013 Active-Semi, Inc.