ACT811/B TUBE DESIGN GUIDE Rev 02, Sep 2013 12W 120V LED Tube — Active Direct Drive™ Input Voltage Device LED(s) LED Current Output Topology 100 - 120VAC ACT811/ACT811B 3.3V x51 120mA (Programmable) 12W Active Direct Drive™ MODE pins are for LED current and configuration mode setting. VP pin connects to a capacitor for operation of Active Valley Fill™. TOP, IREG, SWA, SWB, SWC, SWD pins connect to those 5 segments of LED string and the IREG pin regulates the output LED current. Key Component Selection Determining the total LED quantity first by equation (1); setting the MODE A:B:C:D=3:6:6:18 (quantity of 3.3V LED) or 2:4:8:16 by shorting or opening R2, then determining the group M by equation (2). Operation and Application N TOTAL (VAC 1.414 0.9 ) LED _ VF Figure 1 is the schematic of an Active Direct Drive™ LED driver using ACT811/B to provide an 12W simple design to drive 5 segments of LED string. This circuit includes the AC rectified circuit (B1), current setting circuit (ISET pin, R1), LED string (L1 — L51) and the IC (ACT811/B) control circuit. ACT811/B is a proprietary LED driver IC based on Active-Semi's Patented Active Direct Drive™ Technology and Patent-Pending Active Valley Fill™ that adaptively drives a string of variable-weighted LED segments up to 12W directly from an AC line voltage with very few total components. VIN and VN pins connect to the Bridge Rectifier. Exposed pad is the VSS pin for board grounding and heat dissipation. ISET and NM N TOTAL ( N A N B N C N D ) (1) (2) R1 sets the LED current by the equation (3) I LED (VISET R1 ) K ISET (3) that the Viset and Kiset values are stated in the Electrical Characteristics table on corresponding product datasheet. The C1 value is recommended 2.2uF/250V for 8W / 1 0 0 ~ 1 2 0 V A C and 3.3uF/250V for 12W/100~120VAC. As for ACT811B, lower C1 value gets better PF and THD with compromise of flicker. Figure 1: AC IN M SWD VIN C6 D SWC D1 A1 N/C TOP B1 N/C L52 N/C R5 A2 N/C Schematic of LED Lighting Driver C3 C U1 For EMI (Optional) SWB VN ACT811/B B VP A SWA IREG C1 (CFILL) (RISET) ISET VSS MODE (EP) R1 R2 C4 C2 DIM R4 PWM Dimming (Optional) Copyright © 2013 Active-Semi, Inc. -1- www.active-semi.com ACT811/B TUBE DESIGN GUIDE Rev 02, Sep 2013 Performance Measurement (ACT811 at 10W) Bill of Materials REF. DESCRIPTION MFTR. U1 IC, ACT811/ACT811B, SOP-16 EP Active-Semi R1 Resistor, 91kΩ to 191kΩ, 1/4W, 5%, SMT, 0805 Vishay R2 Resistor, 0Ω, 1/4W, 10%, SMT, 0805 Vishay R5 Resistor, 3.3Ω, 1/4W, 10%, SMT, 0805 Vishay (Option-1) Electrolytic capacitor, 4.7µF/250V, 20% C1 (Option-2) Ceramic capacitor, 2.2µF/250V, X7T, SMT, 2220 Panasonic Murata, TDK (Option-3) Metalpoly film capacitor, 2.2µF/250V Panasonic, Nissei C2 Ceramic capacitor, 0.1µF/25V, X7R, SMT, 0805 Murata, TDK C3 Ceramic capacitor, 0.1µF/250V, X7R, SMT, 0805 Murata, TDK C4 Ceramic cap, 0.1µF/6.3V, X7R, SMT, 0805 Murata, TDK VIN (AC) 90 100 110 120 130 Input Current (mA) 126.2 113.1 106.3 100.5 100.4 Power Factor 0.933 0.937 0.932 0.912 0.912 Input Power (W) 10.6 10.6 10.9 11 11.9 Lumen (lm) 914 991 1072 1128 1183 Efficacy (lm/W) 86.23 93.49 98.35 102.55 99.41 THD (%) 38.5 38.2 38.2 38.6 38.6 Efficiency by ACT811 at x42 LEDs for 110VAC VIN (AC) 90 100 110 120 130 Input Power (W) 11.51 11.79 12.47 12.93 13.76 LED V (V rms) 87.8 101 108 112 113 LED I (mA rms) 119.8 109 104.8 104.2 103.8 Output Power (W) 10.52 11.01 11.32 11.67 11.73 Efficiency (%) L1~ LED, SPMWHT5225D5WAP0S0 L51 Samsung B1 IC Bridge Rectifier, MB6S Fairchild D1 Diode, TVS, 400V, SMAJ400A Littlefuse C6 Capacitor, 0.1uF, MEX-X2 Tenta L52 Inductor, 10mH, RLB9012-102KL Bourns 91.40% 93.38% 90.78% 90.26% 85.25% PF and THD Improvement by ACT811B, C1=1uF VIN (AC) 90 100 110 120 130 Power Factor 0.957 0.960 0.960 0.955 0.947 THD (%) 26.6 25.1 24.9 25.3 26 PF and THD Improvement by ACT811B, C1=N/A VIN (AC) 90 100 110 120 130 Power Factor 0.986 0.988 0.987 0.985 0.982 THD (%) 15.1 14.5 15.5 16.6 18.2 PCB Top and Bottom Layers Input Voltage and Current Waveforms TOP and VP Waveforms CH1 CH2 CH2 CH1 CH1: VVP, 50V/div CH2: VTOP, 50V/div TIME: 2.50ms/div CH1: IVIN, 100mA/div CH2: VVIN, 100V/div TIME: 10ms/div Copyright © 2013 Active-Semi, Inc. -2- www.active-semi.com